MAICMMC40X120 Datasheet Power Core Module with SiC Power Bridge 1/2017

MAICMMC40X120 Datasheet Power Core Module with SiC Power Bridge 1/2017

Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: sales.support@microsemi.com www.microsemi.com 2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. About Microsemi Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable antitamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. A150-0002 MAICMMC40X120 Datasheet Revision 1.2 2

1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.2 The following is a summary of the changes in revision 1.2 of this document. Item 1. Table 13 in Pin Descriptions was updated. For more information, see Table 13. 1.2 Revision 1.1 The following is a summary of the changes in revision 1.1 of this document. Item 1. The Features section was updated. For more information, see Features. Item 2. Table 10 in Thermal Characteristics was updated. For more information, see Table 10. Item 3. Table 11 in Mechanical Characteristics was updated. For more information, see Table 11. Item 4. Figure 5 in Package Outlines was updated. For more information, see Figure 5. Item 5. Figure 6 in Package Outlines was updated. For more information, see Figure 6. 1.3 Revision 1.0 Revision 1.0 was the first publication of this document. MAICMMC40X120 Datasheet Revision 1.2 3

Contents 1 Revision History... 3 1.1 Revision 1.2... 3 1.2 Revision 1.1... 3 1.3 Revision 1.0... 3 2 Product Overview... 7 2.1 Features... 7 2.2 Part Numbering... 9 3 Functional Description... 10 4 Electrical Specifications... 12 5 Thermal Characteristics... 16 6 Mechanical Characteristics... 17 7 Characteristic Curves... 18 8 Pin Descriptions... 19 9 Package Outlines... 22 MAICMMC40X120 Datasheet Revision 1.2 4

Figures Figure 1 MAICMMC40X120B... 7 Figure 2 Intelligent Power Electrical Control System... 8 Figure 3 Functional Block Diagram... 11 Figure 4 De-rating Curve... 18 Figure 5 MAICMMC40X120A Package Outline... 22 Figure 6 MAICMMC40X120B Package Outline... 23 MAICMMC40X120 Datasheet Revision 1.2 5

Tables Table 1 MAICMMC40X120 Naming Methodology... 9 Table 2 Absolute Maximum Ratings... 12 Table 3 Input Electrical Characteristics... 12 Table 4 Output Electrical Characteristics... 13 Table 5 LVDS Signal Characteristics... 13 Table 6 SiC MOSFET Characteristics... 14 Table 7 Body Diode and SiC Freewheeling Diode Characteristics... 14 Table 8 Isolation Characteristics... 15 Table 9 Temperature Sensor PTC Characteristics... 15 Table 10 Thermal Characteristics... 16 Table 11 Mechanical Characteristics... 17 Table 12 Power Pin Descriptions... 19 Table 13 MAICMMC40X120 Signal Pin Descriptions... 19 MAICMMC40X120 Datasheet Revision 1.2 6

2 Product Overview The Microsemi Power Core Module (PCM) is an intelligent, cost-effective modular unit integrating the Hybrid Power Drive (HPD) module and the PCM controller board. The power stage of the PCM comprises a three-phase inverter bridge circuit embedded with SiC MOSFETs and SiC Schottky barrier diodes. The driver circuit sub-assembly is derived from Microsemi s standard HPD design. The controller sub-assembly is made up of low-voltage circuitry, primarily digital circuits for pulsewidth modulation (PWM) generation and communication bus interfaces with local bias power supplies. The output power rating of the PCM is 5 kva. Refer to the MAIPDMC40X120 datasheet for more information on the HPD. The PCM design provides a high level of integration with screw-on M3 terminals for power connections and a standard connector interface for low-voltage signals. The module is offered in a plastic package with an AlSiC baseplate and maximum dimensions of 105 mm 85 mm 36 mm. The power substrate is potted with silicone gel and the driver printed wiring assembly (PWA) is Parylene coated, which provides environmental protection with similar performance to a hermetic package. Documentation support provides qualification data and reliability data (FIDES guide). The primary target application includes power conversion for electric motor drives on aircraft actuator systems. Figure 1 MAICMMC40X120B 2.1 Features The following are the key features of the MAICMMC40X120 Power Core Module: Fully engineered solution offering excellent performance and reliability, given typical aviation mission profiles MAICMMC40X120 Datasheet Revision 1.2 7

SiC MOSFET for power conversion o o o Low RDS(on) High-speed switching High power efficiency SiC Schottky diode for freewheeling o Zero-reverse recovery Integrated gate drive circuitry with isolation and shoot-through detection and protection capability Integrated control card with embedded FPGA for three-phase bridge control High-speed low-voltage differential signaling (LVDS) communication bus for data exchange Circuitry for three-phase current sense, DC bus voltage sense, and temperature sense AlSiC base plate for extended reliability and reduced weight Si3N4 substrate for improved thermal performance Direct mounting to heat sink (isolated package) Custom variants are available; contact your Microsemi sales representative The following illustration shows the application of PCM within the Power Drive Electronics System. Figure 2 Intelligent Power Electrical Control System MAICMMC40X120 Datasheet Revision 1.2 8

2.2 Part Numbering The following table shows the naming methodology for the MAICMMC40X120 Power Core Module. Table 1 MAICMMC40X120 Naming Methodology M Microsemi A Screening level = aviation I Intelligent power solutions CM Type CM = power core module MC Technology MC = SiC MOSFET 40 Current rating in amps X Topology = three-phase bridge 120 Voltage rating: 120 = 1200 V A Package A = metric with horizontal connector B = metric with vertical connector MAICMMC40X120 Datasheet Revision 1.2 9

3 Functional Description The PCM architecture has evolved from Microsemi s standard HPD design, providing control and monitoring functionalities for motor control applications. The PCM is composed of the HPD module with an integrated PCM controller. The HPD comprises the driver PWA and the three-phase bridge substrate. A functional block diagram of the PCM with the subassembly architecture is shown in the figure below. The PCM controller provides high-speed communication through bidirectional LVDS interface. Two LVDS buses (i.e., the control and monitoring buses) are employed for data exchange. The control bus receiving data consists of duty cycle information for the three-phase bridge and the solenoid bridge. The control bus transmission data primarily consists of digitized PCM telemetry measurements (three-phase current, solenoid current, high-voltage direct current (HVDC) bus voltage, and rotor position signals) along with drive enable status. The monitoring bus is unidirectional (for monitoring purposes). The transmission data for the monitoring bus is composed of PCM telemetry information with drive enable status. 12-bit dual-channel ADCs convert and transmit digital telemetry information to the FPGA. The ADC can operate at speeds of up to 1 MSPS. The PCM controller is made of an FPGA, which it uses to perform bidirectional LVDS communication and PWM generation. The PCM design has the provision to provide shoot-through protection in order to cut-off the gatedrive signals to the three-phase bridge when the over-current signal from the driver PWA is high. This customization can be implemented within the FPGA logic. A 31-pin external connector is mounted on the PCM controller to interface the low-voltage signals with the higher level assembly. The PCM is offered in two mounting configurations: a vertical connector and a horizontal connector (for more information, see Package Outlines). The driver PWA within the HPD provides the gate-drive signals to the MOSFETs in the three-phase bridge. There are four sets of gate-drive signals to control the SiC MOSFETs. Four floating bias power supplies generate bias voltages for each of the gate drivers to control the upper MOSFETs. A common bias power supply generates the bias voltages for the lower gate drivers since they all reference the same HVDC bus return. The bias supply for the logic side of the gate drivers and other telemetry circuits is supplied by the PCM controller. The driver PWA contains Hall effect sensors (HES) to monitor the three-phase and solenoid currents, and to provide bus-current detection for fault management. The driver PWA also scales down the HVDC bus voltage and provides an isolated output. The gate drivers, HES, and the operational amplifier within the driver PWA provide the voltage isolation to allow reliable interface with the next level assembly. Two temperature sensors (PT1000) monitor the HPD temperature. The three-phase bridge substrate contains 1200 V rated, high-speed SiC MOSFETs and SiC Schottky barrier diodes to generate the three-phase switching outputs. Power and low-level signal routing is provided through pin terminals from the driver PWA to the substrate. The HPD substrate is customizable in order to accommodate additional power transistors, offering a flexible design with added power conversion capabilities. The driver PWA adapts to the substrate design customization while complying with the form and fit functionalities. MAICMMC40X120 Datasheet Revision 1.2 10

The following illustration shows the functional blocks of the MAICMMC40X120 Power Core Module. Figure 3 Functional Block Diagram MAICMMC40X120 Datasheet Revision 1.2 11

4 Electrical Specifications The following table shows the absolute maximum ratings at 25 C unless otherwise specified. Use caution, as these devices are sensitive to electrostatic discharge. Be sure to follow proper handling procedures. Table 2 Absolute Maximum Ratings Symbol Parameter Ratings Unit V DSS Drain-source breakdown voltage 1200 V I D Continuous switch drain current T C = 25 C 32 A T C = 80 C 24 A I DM Pulsed drain current 68 A I F Antiparallel diode maximum DC T J = 25 C forward current 32 A P15V Input bias1 supply voltage 18 V I CC Input bias1 supply current 120 ma V DISC Discrete signal input voltage 3.6 V V LVDS LVDS bus voltage range 0.5 to 3.3 V T J Maximum power semiconductor junction temperature 175 C The following table shows the input electrical characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. Table 3 Input Electrical Characteristics Parameter Symbol Min Typ Max Unit Notes HVDC input bus voltage V BUS 540 900 V Bias1 power supply voltage P15V 12 15 18 V Bias1 supply current I CC 113 120 ma F sw1 = 10 khz Rotor position measurement range HES_IN 0 24 ma Discrete signal input voltage V DISC 0 3.3 3.6 V 1. F SW corresponds to the switching frequency. PROG1; PROG2 DRIVE_EN MAICMMC40X120 Datasheet Revision 1.2 12

The following table shows the output electrical characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. Table 4 Output Electrical Characteristics Parameter Symbol Min Typ Max Unit Notes Phase current 1 Solenoid current Peak Phase-nom 12.5 A F SW = 10 khz Cos ф = 0.97 T J = 125 C M 2 a = 0.85 Phase-max 25 F SW = 10 khz Cos ф = 0.97 T J = 25 C M a = 0.42 Holding SOL_SW-H 1 A T C = 110 C Transient SOL_SW-T 5 T C = 110 C For <100 ms Power rating P OUT 5 KVA Power efficiency Ƞ 98.8 % I D = 12.5 A Phase current sense range I PR 40 40 A Solenoid current sense I SR 10 10 A range Current sense accuracy I TOT 2 2 % T A = 25 C to 125 C 3 3 % T A = 40 C to 25 C HVDC sense accuracy 1.5 1.5 % Rotor position currentconversion factor RP F 6.1035 μa/lsb Phase current-digital IP F X is the digital (X 2048) * 0.0123 A conversion equation output code Solenoid current-digital conversion equation HVDC input bus-conversion factor IS F (X 2048) * 0.0122 A X is the digital output code DC F 0.308 V/LSB 1. The test conditions in the notes section are theoretical. The data will be validated with characteristic curves in the future revision. 2. M a denotes the modulation index. The following table shows the LVDS signal characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. Table 5 LVDS Signal Characteristics Parameter Symbol Min Typ Max Unit Notes LVDS high-level input voltage V LVDS_H 2 V LVDS low-level input voltage V LVDS_L 0.8 V Differential input voltage V LVDS_ID 0.1 0.6 V MAICMMC40X120 Datasheet Revision 1.2 13

Parameter Symbol Min Typ Max Unit Notes Common-mode output voltage V LVDS_OCM 1.125 1.2 1.375 V Differential output voltage V LVDS_OD 247 340 454 mv The following table shows the SiC MOSFET characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. The SiC MOSFET characteristics are measured at the power substrate level. This data is for analysis only and cannot be validated at the HPD level. Table 6 SiC MOSFET Characteristics Parameter Symbol Min Typ Max Unit Notes Drain-source on resistance R DS(on) 80 100 mω Turn-on delay time T d(on) 9 Turn-off delay time T d(off) 46 Rise time T r 8 Fall time T f 30 Turn-on energy E on 0.43 Turn-off energy E off 0.24 ns mj V GS = 20 V I D = 20 A T J = 25 C Inductive switching V GS = 20/ 5 V V Bus = 600 V I D = 20 A RG = 5 Ω T J = 150 C The following table shows the body diode and SiC freewheeling diode characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. The SiC diode characteristics are measured at the power substrate level. This data is for analysis only and cannot be validated at the HPD level. Table 7 Body Diode and SiC Freewheeling Diode Characteristics Parameter Symbol Min Typ Max Unit Notes Body diode forward voltage V SD 3.6 V V GS = 5 V I SD = 10 A Body diode reverse recovery time t rr 140 ns I SD = 20 A Body diode reverse recovery charge Q V GS = 5 V rr 115 nc V R = 800 V Body diode reverse recovery current I rr 2 A di F/dt = 100 A/µs Peak repetitive reverse voltage V RRM 1200 V Freewheeling diode DC forward current I F 20 A Freewheeling diode forward voltage V F 1.5 1.8 V 2.3 V The following table shows the isolation characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. MAICMMC40X120 Datasheet Revision 1.2 14

Table 8 Isolation Characteristics Parameter Symbol Min Typ Max Unit Notes Gate driver common-mode transient immunity (CMTI) RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz Isolation dielectric between primary and secondary (power) under DC voltage Isolation resistance between primary and secondary under 500 VDC dviso/dt 100 kv/μs V CM = 1 kv V ISOL1 1500 V V ISOL2 2120 V V ISOL3 100 MΩ The following table shows the temperature sensor PTC characteristics of the MAICMMC40X120 Power Core Module at 25 C unless otherwise specified. Use the values in the following table to calculate the thermistor value (RT): RT = R0(1 + A * T + B * T 2 ) for the temperature range from 0 C to 250 C RT = R0(1 + A * T + B * T 2 + C(T 1000)T 3 ) for the temperature range from 50 C to 0 C Table 9 Temperature Sensor PTC Characteristics Parameter Symbol Min Typ Max Unit Notes Temperature sense range T R 55 250 C RTD nominal value R 0 1000 Ω At 0 C Temperature sense accuracy 1 T TOT 2 2 % A 3.9083 * 10 3 C 1 B 5.775 * 10 7 C 2 C 4.183 * 10 12 C 4 T ±(0.3 + 0.005 * T ) C 1. Temperature sense accuracy represents the variation of the actual resistance versus the measured resistance for the PT1000. MAICMMC40X120 Datasheet Revision 1.2 15

5 Thermal Characteristics The following table shows the thermal characteristics of the MAICMMC40X120 Power Core Module. Table 10 Thermal Characteristics Parameter Symbol Min Typ Max Unit Notes Case temperature T C 55 125 C Storage T S 55 125 C Pressure range 16 190 kpa Thermal resistance (junction-case) Ө JC MOSFET 0.77 Ө JC DIODE 0.67 C/W See De-rating Curve Power dissipation 1 P D TBD 60 TBD W F SW = 10 khz Cos ф = 0.97 V BUS = 540 V I D = 12.5 A 1. The power dissipation includes the driver and controller PWA and the substrate losses. MAICMMC40X120 Datasheet Revision 1.2 16

6 Mechanical Characteristics The following table shows the mechanical characteristics of the MAICMMC40X120 Power Core Module. Table 11 Mechanical Characteristics Parameter Max Unit Size: MAICMMC40X120A 105 85 30 mm Size: MAICMMC40X120B 105 85 36 mm Weight 297 g Mounting: fastener Mounting: washer 4.4 mm diameter ( 6) (through-hole) (maximum) 9.0 mm diameter ( 6) (surface) (maximum) Power connector: metric M3 screw terminals ( 7) Power connector: Imperial 1 #4 screw terminals ( 7) Mounting torque: Torque M4 (to heat sink) 3.5 Nm Mounting torque: Torque M3 (for terminals) 1 Nm Signal connector part number: MAICMMC40X120A Signal connector part number: MAICMMC40X120B Baseplate information 102R31P-CBRPT1 102R31P-C6P1 AlSiC material with thickness: 4 mm 1. Contact your Microsemi sales representative for imperial hardware ordering information. MAICMMC40X120 Datasheet Revision 1.2 17

7 Characteristic Curves The following illustration shows the de-rating curve of the MAICMMC40X120 Power Core Module. Figure 4 De-rating Curve MAICMMC40X120 Datasheet Revision 1.2 18

8 Pin Descriptions The following table shows the power pin descriptions for the MAICMMC40X120 Power Core Module. Table 12 Power Pin Descriptions Power pin Description Reference designator I/O type Connector type S1 HVDC bus input V_BUS + Input M3 screw terminal S2 HVDC bus input return V_BUS Input M3 screw terminal S3 Output current for phase Phase_1 Output M3 screw terminal S4 Output current for phase Phase_2 Output M3 screw terminal S5 Output current for phase Phase_3 Output M3 screw terminal S6 Solenoid output current Sol_SW Output M3 screw terminal S7 Solenoid output current return Sol_RTN Output M3 screw terminal The following table shows the signal pin descriptions for the MAICMMC40X120A and MAICMMC40X120B Power Core Module. MAICMMC40X120A and MAICMMC40X120B configurations have the same signal pin-out as listed below. Table 13 MAICMMC40X120 Signal Pin Descriptions Description Reference MAICMMC0X120 I/O Type Signal Definition P1 Signal Pin Designator 1 HES rotor input2 HES_IN2 Input Analog input range: 0 ma 24 ma 2 Ground GND Input 3 HES rotor input3 HES_IN3_RTN Input Return for HES rotor input3 return 4 Ground GND Input 5 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 6 Ground GND Input 7 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 8 Ground GND Input 9 Temperature sensor (1) + TEMP_SENSOR1+ Output See Temperature Sensor 10 Control bus (LVDS_N) receive signal return 11 Temperature sensor (1) COM_RX_N Input See LVDS Signal Characteristics TEMP_SENSOR1 Output Return for R T1+ MAICMMC40X120 Datasheet Revision 1.2 19

MAICMMC0X120 Description Reference P1 Signal Pin Designator I/O Type Signal Definition 12 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 13 Temperature TEMP_SENSOR2+ Output See Temperature Sensor sensor (2) + 14 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 15 Temperature TEMP_SENSOR2 Output Return for R T2+ sensor (2) 16 15 V bias input P15V Input 15 VDC power source 17 HES rotor input2 HES_IN2_RTN Input Return for HES rotor input2 return 18 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 19 HES rotor input3 HES_IN3 Input Analog input range: 0 ma 24 ma 20 Reserved for FPGA Not applicable Reserved Reserved programming through JTAG 21 HES rotor input1 HES_IN1 Input Analog input range: 0 ma 24 ma 22 HES rotor input1 return HES_IN1_RTN Input Return for HES rotor input1 23 Status bus (LVDS_N) transmit signal return 24 Reserved for FPGA programming through JTAG 25 Status bus (LVDS_P) transmit signal 26 Control bus (LVDS_P) receive signal MON_TX_N Output See LVDS Signal Characteristics Not applicable Reserved Reserved MON_TX_P Output See LVDS Signal Characteristics COM_RX_P Input See LVDS Signal Characteristics 27 Pin programming 2 PROG2 Input GND/open low-power circuit Ground state: voltage < 0.9 V at 1 ma Open state: equivalent impedance > 1 MΩ 28 Control bus (LVDS_N) transmit signal return COM_TX_N Output See LVDS Signal Characteristics MAICMMC40X120 Datasheet Revision 1.2 20

MAICMMC0X120 Description Reference P1 Signal Pin Designator I/O Type Signal Definition 29 Pin programming 1 PROG1 Input GND/open low-power circuit Ground state: voltage < 0.9 V at 1 ma Open state: equivalent impedance > 1 MΩ 30 Drive enable DRIVE_EN Input GND/open low-power circuit Ground state: voltage < 0.9 V at 1 ma Open state: equivalent impedance > 1 MΩ 31 Control bus (LVDS_P) transmit signal COM_TX_P Output See LVDS Signal Characteristics MAICMMC40X120 Datasheet Revision 1.2 21

9 Package Outlines The following illustrations show the package outlines for the MAICMMC40X120A and MAICMM4C0X120B Power Core Module variants. High-definition images of the package outlines for this product are available in the attached Adobe Acrobat files. To view or print the information, double-click the attachment icons to the left of the figure titles. Figure 5 MAICMMC40X120A Package Outline MAICMMC40X120 Datasheet Revision 1.2 22

Power Core Module with SiC Power Bridge Figure 6 MAICMMC40X120B Package Outline MAICMMC40X120 Datasheet Revision 1.2 23