N50. 1 GHz Low Noise Silicon MMIC Amplifier. Technical Data INA SOT-143 Surface Mount Package

Similar documents
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.

Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking. OUTPUT and V d 5 GND 4 V CC

Cascadable Silicon Bipolar MMIC Amplifier. Technical Data MSA-0686

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND. V dd. Note: Package marking provides orientation and identification.

87x. MGA GHz 3 V Low Current GaAs MMIC LNA. Data Sheet

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet

Technical Data IFD IFD-53110

Surface Mount Package SOT-363/SC70. Pin Connections and Package Marking. AHx

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet

Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic

Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking GND 1 5 GND. Note: Package marking provides orientation and identification.

ADA-4543 Silicon Bipolar Darlington Amplifier. Data Sheet. 1Tx

Data Sheet. 3Tx. ADA-4743 Silicon Bipolar Darlington Amplifier. Description

Data Sheet. 2Tx. ADA-4643 Silicon Bipolar Darlington Amplifier. Description. Features. Specifications. Applications. Surface Mount Package

0.1 6 GHz 3V, 17 dbm Amplifier. Technical Data MGA-82563

ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349

AHx. Data Sheet. ABA GHz Broadband Silicon RFIC Amplifier. Description. Features. Applications. Surface Mount Package: SOT-363 /SC70

AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet

Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package

IAM GHz 3V Downconverter. Data Sheet

GHz Upconverter/Amplifier. Technical Data HPMX 2006 YYWW HPMX 2006 YYWW HPMX-2006

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

IAM GHz 3V Downconverter. Data Sheet. Features. Description. Applications. Simplified Schematic. Surface Mount Package: SOT-363 (SC-70)

Agilent IAM GHz 3V Downconverter Data Sheet

Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1

MGA Current Adjustable Low Noise Amplifier

Application Note 1360

Features. Specifications. Applications. Vcc

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package

TOP VIEW 4 C BLOCK. Maxim Integrated Products 1

Features. Specifications

techniques, and gold metalization in the fabrication of this device.

Data Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.

Agilent MGA MHz to 6 GHz High Linear Amplifier Data Sheet

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

83x. Data Sheet. MGA dbm P SAT 3 V Power Amplifier for GHz Applications. Description. Features. Applications

MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package. Data Sheet. Description. Features. Applications

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

Application Note 5460

Data Sheet. ALM GHz 1.0GHz 2 Watt High Linearity Amplifier. Description. Features. Specifications. Component Image.

Data Sheet. ALM GHz 3.9GHz 2 Watt High Linearity Amplifier. Description. Features. Component Image. Specifications WWYY XXXX

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking

Data Sheet. ALM MHz 4GHz PIN Diode Variable Attenuator Module. Description. Features. Specifications. Applications.

MGA MHz to 6 GHz High Linear Amplifier

Features. Specifications

Features. Specifications

Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.

4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones. Technical Data AT-36408

SGA-6489 SGA-6489Z Pb

Data Sheet. ALM GHz 2.40 GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.

SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

RF3376 General Purpose Amplifier

MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications. Applications. All other pins NC Not Connected

Additional heat sink required!

SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

Data Sheet. MGA-565P8 20 dbm P sat. High Isolation Buffer Amplifier. 1Bx. Features. Description. Specifications. Applications. Simplified Schematic

Features. Specifications. Note:

Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking

i 1 i 2 LOmod 3 RF OUT 4 RF OUT 5 IF 6 IF 7 ENABLE 8 YYWW

MGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications

Application Note 5011

V S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.

SGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1

Data Sheet. ALM MHz 870 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Features.

SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

Application Note No. 027

Silicon Bipolar Low Noise Microwave Transistors

1 MHz to 2.7 GHz RF Gain Block AD8354

Data Sheet. insertion loss. The bypass mode also boosts dynamic range when high level signal is being received.

Data Sheet. ALM W Analog Variable Gain Amplifier. Description. Features. Specifications. Pin connections and Package Marking.

NLB-310. RoHS Compliant & Pb-Free Product. Typical Applications

20 40 GHz Amplifier. Technical Data HMMC-5040

Thin-Film Cascadable Amplifier 5 to 1000 MHz. Technical Data. UTO/UTC 1005 Series

TSH MHz to 1GHz AMPLIFIER. 1.5V to 5V OPERATING VOLTAGE 28dB 450MHz

72x. MGA PHEMT* Low Noise Amplifier with Bypass Switch. Data Sheet. Description

HMC639ST89 / 639ST89E

Features. Applications. Symbol Parameters/Conditions Units Min. Max.

PART. FREQUENCY (MHz) MAX2640 MAX C2 RF OUT. 1pF GND. Maxim Integrated Products 1

GHz LOW NOISE AMPLIFIER WHM AE 1

PART MAX2605EUT-T MAX2606EUT-T MAX2607EUT-T MAX2608EUT-T MAX2609EUT-T TOP VIEW IND GND. Maxim Integrated Products 1

3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip

Frequency (GHz) 5000 MHz

IF Digitally Controlled Variable-Gain Amplifier

HMC639ST89 / 639ST89E

High Performance Isolated Collector Silicon Bipolar Transistor. Technical Data HBFP-0450

RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier. Features. Specifications. Applications. RFin

Features. Specifications. Applications

Transcription:

GHz Low Noise Silicon MMIC Amplifier Technical Data INA- Features Internally Biased, Single V Supply (7 ma) 9 db Gain.6 db NF Unconditionally Stable Applications Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, and TV Tuner Applications Equivalent Circuit (Simplified) SOT- Surface Mount Package Pin Connections and Package Marking N GND Description Hewlett-Packard s INA- is a Silicon monolithic amplifier that offers excellent gain and noise figure for applications to. GHz. Packaged in a miniature SOT- package, it requires very little board space. The INA- uses a topology which is internally biased, eliminating the need for external components and providing decreased sensitivity to ground inductance. The INA- is fabricated using HP s GHz f MAX ISOSAT TM Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability. GROUND 96-668E 6-6

Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [] Device Voltage, to ground V P in CW Input Power dbm + T j Junction Temperature C T STG Storage Temperature C -6 to INA- Electrical Specifications [], T C = C, Z O = Ω, = V Symbol Parameters and Test Conditions Units Min. Typ. Max. G p Power Gain ( S ) f = 9 MHz db 6. 9 NF Noise Figure f = 9 MHz db.6 P db Output Power at db Gain Compression f = 9 MHz dbm IP Third Order Intercept Point f = 9 MHz dbm + VSWR Input VSWR f = 9 MHz Output VSWR f = 9 MHz. I cc Device Current ma 7 ι d Group Delay f = 9 MHz ps INA- Typical Scattering Parameters [], T C = C, Z O = Ω, = V Freq. S S S S K GHz Mag Ang db Mag Ang db Mag Ang Mag Ang Factor.. -..8-6 -.9..8 -.68.. -..8 - -.7.6 9.7 -.6.. -..8 - -..7 6.7-9.. -6..68-6 -..8.8-6.. -.9. -9 -.6..9-78.8..6 -.7. -6 -.. 6.9-9..6.7 -..6-7 -9... -7..7.8-7.9. -87-8..8 7. -.6.8.9-7.. -99-7.7.. -..9.9-8 9.6 9.7 - -6.9.. -... -98 8.9 8.78 - -6.. 6. -9... - 7. 7.8 - -..6 9. -6... -..97-6 -.8.7 6. -7..6. -6.8.9-76 -.8 6. -79.7.8. -77..8 69 -..9 8. 7... 7.7. 7-9..6. 7.9.. 8 9..9 8..9. 66.. 9 8.. -7.9.7. 6.6.. 6 7..7 9-7.7. 9. 6.69 Note:. Reference plane per Figure 9 in Applications Information section. Thermal Resistance [] : θ jc = C/W Notes:. Operation of this device above any one of these limits may cause permanent damage.. T C = C (T C is defined to be the temperature at the package pins where contact is made to the circuit board). 6-7

INA- Typical Performance, T C = C, Z O = Ω, = V 6 GAIN (db). V. V. V NOISE FIGURE (db). V. V. V P db (dbm) - -. V. V. V....7.9......7.9.. -6....7.9.. Figure. Power Gain vs. Frequency and Voltage. Figure. Noise Figure vs. Frequency and Voltage. Figure. Output Power for db Gain Compression vs. Frequency and Voltage. +8 GAIN (db) - + +8 NOISE FIGURE (db) + - P db (dbm) - - +8 + -....7.9......7.9.. -....7.9.. Figure. Gain vs. Frequency and Temperature. Figure. Noise Figure vs. Frequency and Temperature. Figure 6. Output Power for db Gain Compression vs. Frequency and Temperature... +8 + - VSWR (N:). I CC (ma).....7.9.. 6 7 (V) Figure 7. Input and Output VSWR vs. Frequency. Figure 8. Supply Current vs. Voltage and Temperature. 6-8

INA- Applications Information Introduction INA- is a silicon integrated circuit amplifier with a Ω input and output. The INA- uses resistive feedback to provide flat gain for low noise or multi-purpose gain block applications up to MHz. Phase Reference Planes The positions of the reference planes used to measure S-Parameters are shown in Figure 9. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. Biasing The INA- is a voltage biased device and operates from a single + volt power supply with a current drain of only 7 ma. All bias circuitry is fully integrated into the IC eliminating the need for external DC components. The supply voltage for the INA- is fed in through a separate pin of the device and does not require isolation from the input or output signal connections. REFERENCE PLANES TEST CIRCUIT Figure 9. Reference Planes. Operating Details The INA- is very easy to use. The basic application of the INA- is shown in Figure. DC blocking capacitors are placed in series with the Input and Output to isolate adjacent circuits from the internal bias voltages that are present at these terminals. The values of the blocking capacitors are determined by the lowest operating frequency. The values for the blocking capacitors are chosen such that their reactances are small relative to Ω. As an example, use of the INA- for an application covering the 9 to 98 MHz band would require blocking capacitors of at least 7 p F. The connection to the amplifier must be bypassed by placing a capacitor to ground directly at the bias pin of the package. Like the DC blocking capacitors, the value of the bypass capacitor is determined by the lowest operating frequency for the amplifier. This value may typically be the same as that of the DC blocking capacitors. If long bias lines are used to connect the amplifier to the C block C block C bypass supply, additional bypass capacitors may be needed to prevent resonances that would otherwise result in undesirable gain responses. A well-bypassed line is also desirable to prevent possible oscillations that may occur due to feedback through the bias line from other stages in a cascade. Adequate grounding is needed to obtain maximum performance. The ground pin of the INA- should be connected directly to ground by using plated through holes (vias) near the package terminals. FR- or G- PCB material is a good choice for most low cost wireless applications. Typical board thickness is. or. inches. The width of Ω microstriplines in these PCB thicknesses is also convenient for mounting chip components such as the series DC blocking capacitors. Circuit Example The amplifier example in Figure shows a typical implementation of the INA-. The input and output connections are through Ω microstriplines with DC blocking capacitors. The supply connection is bypassed very close to the lead of the IC. Provision is also made for an additional bypass capacitor on the line near the edge of the PCB. C bypass Figure. Basic Amplifier Application. 6-9

Figure. Application Example. INA- Part Number Ordering Information Part Number Devices per Container Container INA--TR, 7" reel INA--BLK Antistatic bag Package Dimensions.9 (.6).78 (.) PACKAGE MARKING CODE XXX. (.). (.7).6 (.). (.8).6 (.). (.8). (.8).78 (.7). (.).7 (.) TOP VIEW.6 (.).8 (.). (.).8 (.). (.6).9 (.) SIDE VIEW. (.). (.).69 (.7). (.8) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-