Si4456Y N-Channl 4-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).38 at V GS = V 33 4 37.5 nc.45 at V GS = 4.5 V 3 FEATURES Halogn-fr According to IEC 6249-2-2 Availabl TrnchFET Gn II Powr MOSFET % R g and UIS Tstd APPLICATIONS Scondary Rctification Point of Load SO-8 S 8 S 2 7 S 3 6 G 4 5 G Top Viw Ordring Information: Si4456Y-T-E3 (Lad (Pb)-fr) Si4456Y-T-GE3 (Lad (Pb)-fr and Halogn-fr) S N-Channl MOSFET ABSOLUTE MAXIMUM RATINGS, unlss othrwis notd Paramtr Symbol Limit Unit rain-sourc Voltag V S 4 V Gat-Sourc Voltag V GS ± 2 T C = 25 C 33 T Continuous rain Currnt (T J = 5 C) C = 7 C 27 I 23 b, c T A = 7 C 8 b, c A Pulsd rain Currnt I M 7 T Continuous Sourc-rain iod Currnt C = 25 C 7. I S 3. b, c Avalanch Currnt I AS 4 L =. mh Singl Puls Avalanch Enrgy E AS 8 mj T C = 25 C 7.8 T Maximum Powr issipation C = 7 C 5. P W 3.5 b, c T A = 7 C 2.2 b, c Oprating Junction and Storag Tmpratur Rang T J, T stg - 55 to 5 THERMAL RESISTANCE RATINGS Paramtr Symbol Typical Maximum Unit Maximum Junction-to-Ambint b, d t 5 s R thja 29 35 C/W Maximum Junction-to-Foot (rain) Stady Stat R thjf 3 6 Nots: a. Basd on T C = 25 C. b. Surfac Mountd on " x " FR4 board. c. t = 5 s. d. Maximum undr stady stat conditions is 8 C/W. ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9
Si4456Y SPECIFICATIONS T J = 25 C, unlss othrwis notd Paramtr Symbol Tst Conditions Min. Typ. Max. Unit Static rain-sourc Brakdown Voltag V S V GS = V, I = 25 µa 4 V V S Tmpratur Cofficint ΔV S /T J 54 I = 25 µa V GS(th) Tmpratur Cofficint ΔV GS(th) /T J - 7 mv/ C Gat-Sourc Thrshold Voltag V GS(th) V S = V GS, I = 25 µa.5 2.8 V Gat-Sourc Lakag I GSS V S = V, V GS = ± 2 V ± na V S = 4 V, V GS = V Zro Gat Voltag rain Currnt I SS V S = 4 V, V GS = V, T J = 55 C µa On-Stat rain Currnt a I (on) V S = 5 V, V GS = V 3 A rain-sourc On-Stat Rsistanc a V R GS = V, I = 2 A.3.38 S(on) V GS = 4.5 V, I = 5 A.37.45 Ω Forward Transconductanc a g fs V S = 5 V, I = 2 A S ynamic b Input Capacitanc C iss 567 Output Capacitanc C oss V S = 2 V, V GS = V, f = MHz 62 pf Rvrs Transfr Capacitanc C rss 287 V S = 2 V, V GS = V, I = 2 A 8 22 Total Gat Charg Q g 37.5 57 nc Gat-Sourc Charg Q gs V S = 2 V, V GS = 4.5 V, I = 2 A 7 Gat-rain Charg Q gd Gat Rsistanc R g f = MHz.5.6 Ω Turn-On lay Tim t d(on) 45 22 Ris Tim t r V = 2 V, R L = 2 Ω 28 32 Turn-Off laytim t d(off) I A, V GEN = 4.5 V, R g = Ω 56 85 Fall Tim t f 5 23 Turn-On lay Tim t d(on) 2 32 ns Ris Tim t r V = 2 V, R L = 2 Ω 58 9 Turn-Off laytim t d(off) I A, V GEN = V, R g = Ω 55 85 Fall Tim t f 8 5 rain-sourc Body iod Charactristics Continous Sourc-rain iod Currnt I S T C = 25 C 7 Puls iod Forward Currnt a I SM 7 A Body iod Voltag V S I S = 3 A.7. V Body iod Rvrs Rcovry Tim t rr 38 6 ns Body iod Rvrs Rcovry Charg Q rr 42 65 nc I F = 3 A, di/dt = A/µs, T J = 25 C Rvrs Rcovry Fall Tim t a 2 ns Rvrs Rcovry Ris Tim t b 7 Nots: a. Puls tst; puls width 3 µs, duty cycl 2 %. b. Guarantd by dsign, not subjct to production tsting. Strsss byond thos listd undr Absolut Maximum Ratings may caus prmannt damag to th dvic. Ths ar strss ratings only, and functional opration of th dvic at ths or any othr conditions byond thos indicatd in th oprational sctions of th spcifications is not implid. Exposur to absolut maximum rating conditions for xtndd priods may affct dvic rliability. 2 ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9
Si4456Y TYPICAL CHARACTERISTICS, unlss othrwis notd 7 V GS = V thru 4 V.2 (A) 56 (A).9 I - rain Currnt 42 28 4 V GS = 3 V I - rain Currnt.6.3 T C = 25 C T C = 25 C..5..5 2. 2.5 T C = - 55 C. 2 3 4 5 V S - rain-to-sourc Voltag (V) Output Charactristics V GS - Gat-to-Sourc Voltag (V) Transfr Charactristics.45 7 C iss R S(on ) - On-Rsistanc ( mω ).4.37.33.29 V GS = 4.5 V V GS = V Capacitanc (pf) C - 56 42 28 4 C oss.25 2 3 4 5 6 I - rain Currnt (A) On-Rsistanc vs. rain Currnt and Gat Voltag C rss 8 6 24 32 4 V S - rain-to-sourc Voltag (V) Capacitanc.6 I = 2 A V GS = V, I = 2 A Gat-to-Sourc Voltag (V) - V G S 8 6 4 2 V S = V V S = 2 V V S = 3 V R S(on ) - On-Rsistanc (Normalizd).4.2..8 V GS = 4.5 V, I = 2 A 7 34 5 68 85 Q g - Total Gat Charg (nc) Gat Charg.6-5 - 25 25 5 75 25 5 T J - Junction Tmpratur ( C) On-Rsistanc vs. Junction Tmpratur ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9 3
Si4456Y TYPICAL CHARACTERISTICS, unlss othrwis notd.2 I S - Sourc Currnt (A) T A = 5 C.....2.4.6.8..2 R S(on ) - rain-to-sourc On-Rsistanc (Ω).6.2.8.4. 2 4 6 8 V S - Sourc-to-rain Voltag (V) Sourc-rain iod Forward Voltag V GS - Gat-to-Sourc Voltag (V) On-Rsistanc vs. Gat-to-Sourc Voltag.5 2.2 6 V G S(th ) (V ) -. -.4 I = 25 µa I = 5 ma P o w r ( W ) 2 8 -.7 4 -. - 5-25 25 5 75 25 5 T J - Tmpratur ( C) Thrshold Voltag... Tim (s) Singl Puls Powr, Junction-to-Ambint Limitd by R S(on)* (A) rain Currnt ms ms ms I -. s s Singl Puls C... V S - rain-to-sourc Voltag (V) * V GS minimum V GS at which R S(on) is spcifid Saf Oprating Ara, Junction-to-Ambint 4 ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9
Si4456Y TYPICAL CHARACTERISTICS, unlss othrwis notd 4 32 I - rain Currnt (A ) 24 6 8 25 5 75 25 5 T C - Cas Tmpratur ( C) Currnt rating* 2. 8.6 Powr (W) 6 4 Powr (W).2.8 2.4 25 5 75 25 5. 25 5 75 25 5 T C - Cas Tmpratur ( C) Powr, Junction-to-Foot T A - Ambint Tmpratur ( C) Powr, Junction-to-Ambint * Th powr dissipation P is basd on T J(max) = 5 C, using junction-to-cas thrmal rsistanc, and is mor usful in sttling th uppr dissipation limit for cass whr additional hatsinking is usd. It is usd to dtrmin th currnt rating, whn this rating falls blow th packag limit. ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9 5
i t l i f f t i i t Si4456Y TYPICAL CHARACTERISTICS, unlss othrwis notd n s n a t i r l i f f T c n a d v p c m l I d E m a r N o r m a T z h t Nots:. P M t 2. uty Cycl, = t t 2 2. Pr Unit Bas = R thja = 6 C/W 3. T JM T = P M Z (t) thja 4. Surfac Mountd. -3-2 - Squar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Ambint uty Cycl =.5 n s n a r T c n a d v p c m l I d E m a r N o r m a T z h..2..5.2. Singl Puls -4-3 -2 - Squar Wav Puls uration (s) Normalizd Thrmal Transint Impdanc, Junction-to-Foot maintains worldwid manufacturing capability. Products may b manufacturd at on of svral qualifid locations. Rliability data for Silicon Tchnology and Packag Rliability rprsnt a composit of all qualifid locations. For rlatd documnts such as packag/tap drawings, part marking, and rliability data, s /ppg?73852. 6 ocumnt Numbr: 73852 S9-38-Rv. B, 2-Fb-9
Packag Information SOIC (NARROW): 8-LEA JEEC Part Numbr: MS-2 8 7 6 5 E H 2 3 4 S A.25 mm (Gag Plan) h x 45 C All Lads B A L q. mm.4" MILLIMETERS INCHES IM Min Max Min Max A.35.75.53.69 A..2.4.8 B.35.5.4.2 C.9.25.75. 4.8 5..89.96 E 3.8 4..5.57.27 BSC.5 BSC H 5.8 6.2.228.244 h.25.5..2 L.5.93.2.37 q 8 8 S.44.64.8.26 ECN: C-6527-Rv. I, -Sp-6 WG: 5498 ocumnt Numbr: 792 -Sp-6
VISHAY SILICONIX TrnchFET Powr MOSFETs Application Not 88 Mounting LITTLE FOOT, SO-8 Powr MOSFETs Wharton Mcanil Surfac-mountd LITTLE FOOT powr MOSFETs us intgratd circuit and small-signal packags which hav bn bn modifid to provid th hat transfr capabilitis rquird by powr dvics. Ladfram matrials and dsign, molding compounds, and di attach matrials hav bn changd, whil th footprint of th packags rmains th sam. S Application Not 826, Rcommndd Minimum Pad Pattrns With Outlin rawing Accss for MOSFETs, (http:///ppg?72286), for th basis of th pad dsign for a LITTLE FOOT SO-8 powr MOSFET. In convrting this rcommndd minimum pad to th pad st for a powr MOSFET, dsignrs must mak two connctions: an lctrical connction and a thrmal connction, to draw hat away from th packag. In th cas of th SO-8 packag, th thrmal connctions ar vry simpl. Pins 5, 6, 7, and 8 ar th drain of th MOSFET for a singl MOSFET packag and ar connctd togthr. In a dual packag, pins 5 and 6 ar on drain, and pins 7 and 8 ar th othr drain. For a small-signal dvic or intgratd circuit, typical connctions would b mad with tracs that ar.2 inchs wid. Sinc th drain pins srv th additional function of providing th thrmal connction to th packag, this lvl of connction is inadquat. Th total cross sction of th coppr may b adquat to carry th currnt rquird for th application, but it prsnts a larg thrmal impdanc. Also, hat sprads in a circular fashion from th hat sourc. In this cas th drain pins ar th hat sourcs whn looking at hat sprad on th PC board..5.27.27.69.78.98.288 7.3.2 5.7 Figur. Singl MOSFET SO-8 Pad Pattrn With Coppr Sprading.96 5..5.27.27.69.78.98.288 7.3.2 5.7.88 2.25.88 2.25 Figur 2. ual MOSFET SO-8 Pad Pattrn With Coppr Sprading Th minimum rcommndd pad pattrns for th singl-mosfet SO-8 with coppr sprading (Figur ) and dual-mosfet SO-8 with coppr sprading (Figur 2) show th starting point for utilizing th board ara availabl for th hat-sprading coppr. To crat this pattrn, a plan of coppr ovrlis th drain pins. Th coppr plan conncts th drain pins lctrically, but mor importantly provids planar coppr to draw hat from th drain lads and start th procss of sprading th hat so it can b dissipatd into th ambint air. Ths pattrns us all th availabl ara undrnath th body for this purpos. Sinc surfac-mountd packags ar small, and rflow soldring is th most common way in which ths ar affixd to th PC board, thrmal connctions from th planar coppr to th pads hav not bn usd. Evn if additional planar coppr ara is usd, thr should b no problms in th soldring procss. Th actual soldr connctions ar dfind by th soldr mask opnings. By combining th basic footprint with th coppr plan on th drain pins, th soldr mask gnration occurs automatically. A final itm to kp in mind is th width of th powr tracs. Th absolut minimum powr trac width must b dtrmind by th amount of currnt it has to carry. For thrmal rasons, this minimum width should b at last.2 inchs. Th us of wid tracs connctd to th drain plan provids a low impdanc path for hat to mov away from th dvic. APPLICATION NOTE ocumnt Numbr: 774 Rvision: 8-Jun-7
Application Not 826 RECOMMENE MINIMUM PAS FOR SO-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Rcommndd Minimum Pads imnsions in Inchs/(mm) Rturn to Indx Rturn to Indx ocumnt Numbr: 7266 22 Rvision: 2-Jan-8
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