Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION 9 1 BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-1 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation. FEATURES Package type: leaded Package form: TO-1 Dimensions (in mm): Ø.7 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 1 Base terminal connected Hermetically sealed package Lead (Pb)-free component in accordance with RoHS 22/95/EC and WEEE 22/96/EC APPLICATIONS Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I ca (ma) ϕ (deg) λ.1 (nm) BPW77NA 7.5 to 15 ± 1 5 to 1 BPW77NB > 1 ± 1 5 to 1 Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW77NA Bulk MOQ: 1 pcs, 1 pcs/bulk TO-1 BPW77NB Bulk MOQ: 1 pcs, 1 pcs/bulk TO-1 MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V CBO V Collector emitter voltage V CEO 7 V Emitter base voltage V EBO 5 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Total power dissipation T amb 25 C P V 25 mw Junction temperature T j 5 C Operating temperature range T amb - to + 5 C Storage temperature range T stg - to + 5 C Soldering temperature t 5 s T sd 26 C Thermal resistance junction/ambient Connected with Cu wire,.1 mm 2 R thja K/W Thermal resistance junction/gase R thjc 15 K/W www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 1527 2 Rev. 1.5, -Sep-
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors P tot - Total Power Dissipation (mw) 9 32 6 2 R thja R thjc 25 5 75 1 5 15 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I C = 1 ma V (BR)CEO 7 V Collector emitter dark current V CE = 2 V, E = I CEO 1 1 na Collector emitter capacitance V CE = 5 V, f = 1 MHz, E = C CEO 6 pf Angle of half sensitivity ϕ ± 1 deg Wavelength of peak sensitivity λ p 5 nm Range of spectral bandwidth λ.1 5 to 1 nm Collector emitter saturation voltage E e = 1 mw/cm 2, λ = 95 nm, I C = 1 ma V CEsat.15.3 V Turn-on time V S = 5 V, I C = 5 ma, R L = 1 Ω t on 6 µs Turn-off time V S = 5 V, I C = 5 ma, R L = 1 Ω t off 5 µs Cut-off frequency V S = 5 V, I C = 5 ma, R L = 1 Ω f c 11 khz TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Collector light current BASIC CHARACTERISTICS E e = 1 mw/cm 2, λ = 95 nm, V CE = 5 V BPW77NA I ca 7.5 15 ma BPW77NB I ca 1 ma I CEO - Collector Dark Current (na) 9 33 1 6 1 5 1 1 3 1 2 1 1 1 2 5 1 V CE = 2 V E= 15 Fig. 2 - Collector Dark Current vs. Ambient Temperature I ca rel - Relative Collector Current 9 3 2.5 2.25 2. 1.75 1.5 1.25 1..75.5.25 V CE = 5V E e = 1 mw/cm 2 λ = 95 nm 3567 9 1 Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 1527 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.5, -Sep- 3
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 1 I ca - Collector Light Current (ma) 9 39 1 1.1 BPW77NB BPW77NA V CE =5V λ = 95 nm.1.1.1 1 E e - Irradiance (mw/cm 2 ) 1 t on /t off - Turn-on/Turn-off Time (µs) 9 253 1 V CE = 5 V R L = 1 Ω λ = 95 nm 6 2 t on I C - Collector Current (ma) t off 16 Fig. - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current I ca - Collector Light Current (ma) 9 35 1 λ= 95 nm E e = 1 mw/cm 2 1.2 mw/cm 2.1 mw/cm 2.5 mw/cm 2.2 mw/cm 2.1.1 1 1.5 mw/cm 2 V CE - Collector Emitter Voltage (V) 1 S (λ) rel - Relative Spectral Sensitivity 1...6..2 6 1 9 3 λ - Wavelength (nm) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. - Relative Spectral Sensitivity vs. Wavelength C CEO - Collector Ermitter Capacitance (pf) 9 27 2 16 f = 1 MHz.1 1 1 V CE - Collector Ermitter Voltage (V) 1 S rel - Relative Sensitivity 1..9..7.6 9 351 1 2 3 5 6 7..2.2..6 Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 1527 Rev. 1.5, -Sep-
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.5 nom. ±.15 B 5.5 E C +.2 Ø.69 -.7 ±.25 Chip position.5 Lens ±.5 13.2 ±.7 (2.5) 6.15 +.2 -.5 technical drawings according to DIN specifications Drawing-No.: 6.53-523.1- Issue:1; 1.7.96 96 1 Document Number: 1527 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.5, -Sep- 5
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91 www.vishay.com Revision: 1-Jul- 1