Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.) @ =-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G D DD D S GS G Top View of SOP 8 (8) (7) D D (4) G (3) S Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S () N-Channel MOSFET D D (5) (6) MOSFET Ordering and Marking Information APM4568 APM4568 K : APM4568 XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter Rating N Channel P Channel V DSS Drain-Source Voltage 4-4 S Gate-Source Voltage ± ± I D * Continuous Drain Current =V (N) 6.5-5 I DM * Pulsed Drain Current =-V (P) 5 - I S * Diode Continuous Forward Current.5 -.5 A T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 P D * Power Dissipation T A =5 C T A = C.8 R θja * Thermal Resistance-Junction to Ambient 6.5 C/W Note : *Surface Mounted on in pad area, t sec. Unit V A C W Electrical Characteristics (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown =V, I DS =5µA N-Ch 4 - - Voltage =V, I DS =-5µA P-Ch -4 - - Unit V I DSS Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current R DS(ON) a Drain-Source On-State Resistance V DS =3V, =V - - N-Ch T J =85 C - - 3 V DS =-3V, =V - - - P-Ch T J =85 C - - -3 V DS =, I DS =5µA N-Ch.3.5 V DS =, I DS =-5µA P-Ch -.3 -.9 -.5 =±V, V DS =V N-Ch - - ± =±V, V DS =V P-Ch - - ± =V, I DS =6.5A N-Ch - 8 =-V, I DS =-5A P-Ch - 35 48 =4.5V, I DS =4.5A N-Ch - 8 4 =-4.5V, I DS =-3A P-Ch - 48 68 µa V na mω
Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) APM4568K Symbol Parameter Test Conditions Min. Typ. Max. Diode Characteristics V SD a I SD =A, =V N-Ch -.8. Diode Forward Voltage I SD =-A, =V P-Ch - -.8 -. Unit V Dynamic Characteristics b N-Ch - - R G Gate Resistance =V,V DS =V,F=MHz P-Ch - 8 - C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel N-Ch - 98 - =V, P-Ch - 95 - V DS =V, Frequency=.MHz N-Ch - - P-Ch - 5 - =V, V DS =-V, N-Ch - 75 - Frequency=.MHz P-Ch - 7 - Ω pf t d(on) T r Turn-on Delay Time Turn-on Rise Time t d(off) Turn-off Delay Time T f t rr Q rr Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge N-Channel V DD =V, R L =Ω, I DS =A, V GEN =V, R G =6Ω V DD =-V, R L =Ω, I DS =-A, V GEN =-V, R G =6Ω N-Channel I SD =6.5A, di SD /dt =A/µs N-Ch - 6 3 P-Ch - 3 N-Ch - 9 35 P-Ch - 39 N-Ch - 3 55 P-Ch - 43 78 N-Ch - 6 P-Ch - N-Ch - - P-Ch - 9 - N-Ch - 4 - I SD =-5A, di SD /dt =A/µs P-Ch - - ns ns nc Q g Total Gate Charge N-Channel N-Ch - 8 V DS =V, =V, I DS =6.5A Q gs Gate-Source Charge V DS =-V, =-V, Gate-Drain Charge I DS =-5A Q gd Note a : Pulse test ; pulse width 3ms, duty cycle %. Note b : Guaranteed by design, not subject to production testing. P-Ch - 8 N-Ch - 3 - P-Ch - 3.5 - N-Ch - 6 - P-Ch - 3.5 - nc 3
Typical Operating Characteristics N-Channel Power Dissipation Drain Current.5 8 7 Ptot - Power (W)..5..5 ID - Drain Current (A) 6 5 4 3 T A =5 o C. 4 6 8 4 6 T A =5 o C,V G =V 4 6 8 4 6 Safe Operation Area Thermal Transient Impedance ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance.....5. Single Pulse. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E-3.. 3 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 3 = 5, 6, 7, 8, 9, V 5 ID - Drain Current (A) 5 5 5 4.5V 4V 3.5V RDS(ON) - On - Resistance (mω) 45 4 35 3 5 5 =4.5V =V 3V..5..5..5 3. 5 5 5 3 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 5 I D =6.5A.6 I DS =5µA RDS(ON) - On - Resistance (mω) 45 4 35 3 5 5 Normalized Threshold Voltage.4...8.6.4 3 4 5 6 7 8 9. -5-5 5 5 75 5 5 VGS - Gate - Source Voltage (V) 5
Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward.8.6 = V I DS = 6.5A 3 Normalized On Resistance.4...8 IS - Source Current (A) T j =5 o C T j =5 o C.6 R ON @T j =5 o C: mω.4-5 -5 5 5 75 5 5...4.6.8...4.6 VSD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 4 Frequency=MHz Ciss 8 6 4 Coss Crss 5 5 5 3 VDS - Drain - Source Voltage (V) VGS - Gate - source Voltage (V) 9 8 7 6 5 4 3 V DS = V I D = 6.5A Gate Charge 4 8 6 QG - Gate Charge (nc) 6
Typical Operating Characteristics (Cont.) Power Dissipation Drain Current.5 6. 5 Ptot - Power (W).5. -ID - Drain Current (A) 4 3.5 T A =5 o C. 4 6 8 4 6 T A =5 o C,V G =-V 4 6 8 4 6 Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A). Rds(on) Limit 3us ms ms ms s DC T. A =5 O C.. Normalized Transient Thermal Resistance....5... Single Pulse Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E-4 E-3.. 3 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) 8 6 4 8 6 4 = -5, -6, -7, -8, -9, -V -4V -3.5V -3V RDS(ON) - On - Resistance (mω) 8 7 6 5 4 3 = -4.5V = -V..5..5..5 3. -VDS - Drain - Source Voltage (V) 4 8 6 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) 9 8 7 6 5 4 3 I D = -5A Normalized Threshold Voltage.6.4...8.6.4 I DS = -5µA 3 4 5 6 7 8 9 -VGS - Gate - Source Voltage (V). -5-5 5 5 75 5 5 8
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -V I DS = -5A Normalized On Resistance.4...8.6.4 -IS - Source Current (A) T j =5 o C T j =5 o C. R ON @T j =5 o C: 35mΩ. -5-5 5 5 75 5 5...4.6.8...4.6 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 4 8 6 4 Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) 9 8 7 6 5 4 3 V DS = -V I D = -5A 5 5 5 3 -VDS - Drain - Source Voltage (V) 4 8 6 QG - Gate Charge (nc) 9
Package Information SOP-8 D SEE VIEW A E E h X 45 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. MIN. A.75 A..5.4 MAX..69. A.5.49 b.3.5.. c.7.5.7. D 4.8 5..89.97 E 5.8 6..8.44 E 3.8 4..5.57 e.7 BSC.5 BSC h.5.5.. L.4.7.6.5 8 8 MILLIMETERS INCHES Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side.
Carrier Tape & Reel Dimensions OD P P P A H A E OD B A T B W F K B A SECTION A-A SECTION B-B d T Application A H T C d D W E F 33..4+. 3.+.5 5 MIN..5 MIN.. MIN...3.75. 5.5.5. -. -. SOP-8 P P P D D T A B K 4.. 8....5.5+. -..5 MIN..6+. -.4 6.4. 5.... (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5
Taping Direction Information SOP-8 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D-3 45 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs Bias @5 C PCT JESD--B, A 68 Hrs, %RH, C TST MIL-STD-883D-.9-65 C~5 C, Cycles
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C C 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds -4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35- Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 45 + C*.5 mm 5 + C* 45 + C* 45 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. <35 Volume mm 3 35 <.5 mm 4 +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-564 Fax : 886-3-5645 Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 346, Taiwan Tel : 886--9-3838 Fax : 886--97-3838 3