SiEDL N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 6 SOT- SC-7 (-LEADS). at V GS = V. at V GS =. V. 8 at V GS = V. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFET ESD Protected: V Compliant to RoHS Directive /9/EC APPLICATIONS P-Channel Driver - Notebook PC - Servers G D S D Marking Code KD XX Lot Traceability and Date Code Part # Code YY G Top View Ordering Information: SiEDL-T-E (Lead (Pb)-free) SiEDL-T-GE (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted Parameter Symbol s Steady State Unit Drain-Source Voltage V DS 6 V Gate-Source Voltage V GS ± Continuous Drain Current (T J = C) a T A = C.. I D T A = 7 C..9 A Pulsed Drain Current I DM. Continuous Source Current (Diode Conduction) a I S.6. Maximum Power Dissipation a T A = C..8 P D W T A = 7 C..8 Operating Junction and Storage Temperature Range T J, T stg - to C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t s R thja Steady State 8 C/W Maximum Junction-to-Foot (Drain) Steady State R thjf 8 a. Surface mounted on " x " FR board. Document Number: 786 S-7-Rev. B, 9-Mar-
SiEDL SPECIFICATIONS T J = C, unless otherwise noted a Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V DS V GS = V, I D = µa 6 Drain-Source On-Resistance b R DS(on) V GS =. V, I D =. A. Ω V GS = V, I D =. A.. V GS = V, I D =. A. 8 Forward Transconductance b g fs V DS = V, I D =. A ms Diode Forward Voltage V SD I S =. A, V GS = V.8. V Dynamic b Total Gate Charge Q g..6 Gate-Source Charge Q gs V DS = V, V GS =. V I D. A. nc Gate-Drain Charge Q gd. Gate Resistance R g 7 Ω t d(on).8 Turn-On Time t V DD = V, R L = Ω r.8 I D. A, V GEN = V t d(off) R g = Ω.8 Turn-Off Time t f 9.6 ns a. Pulse test: PW µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS C, unless otherwise noted Limits Min. Typ. Max. Gate-Threshold Voltage V GS(th) V DS = V GS, I D = µa.. Gate-Body Leakage I GSS V DS = V, V GS = ± V ± Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V V DS = 6 V, V GS = V, T J = C On-State Drain Current b I D(on) V GS = V, V DS = 7. V. V GS =. V, V DS = V. V GS = V, V DS = V. Unit V µa A..8 V GS = V, 7 V 6 V V..8 T J = - C C I D - Drain Current (A).6. V I D - Drain Current (A).6. C.. V. V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 786 S-7-Rev. B, 9-Mar-
SiEDL TYPICAL CHARACTERISTICS C, unless otherwise noted. 7 - On-Resistance (Ω) R DS(on)....... V GS =. V V GS = V - Gate-to-Source Voltage (V) V GS 6 V DS = V I D = ma.....6.8. I D - Drain Current (ma) On-Resistance vs. Drain Current.......6 Q g - Total Gate Charge (nc) Gate Charge. V GS = V at ma V GS = V.6 R DS(on) - On-Resistance (Normalized)..8 V GS =. V at ma - Source Current (A) I S T J = C T J = C. T J = - C. - - 7..6.9.. T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. - On-Resistance (Ω) R DS(on) I D = ma Variance (V) V GS(th).. -. -. -.6 I D = µa 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage -.8 - - 7 T J - Temperature ( C) Threshold Voltage Variance over Temperature Document Number: 786 S-7-Rev. B, 9-Mar-
SiEDL TYPICAL CHARACTERISTICS C, unless otherwise noted Power (W) - - T A = C 6 Time (s) Power - Drain Current (A) I D.. Limited by R DS(on) * I D(on) Limited T A = C I DM Limited BVDSS Limited.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area ms ms ms s s, DC Normalized Effective Transient Thermal Impedance Duty Cycle =.... P DM. t. t t. Duty Cycle, D = t. Per Unit Base = R thja = 8 C/W. T JM - T A = P DM Z (t) thja. Surface Mounted. - - - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =...... - - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?786. Document Number: 786 S-7-Rev. B, 9-Mar-
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8