MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 5VCoolMOS CEPowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEseriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingsjmosfetwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. TO22FP Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforconsumergradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.pcsilverbox,adapter,lcd&pdptvandlighting. Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 55 V RDS(on),max.38 Ω Qg,typ 24.8 nc ID,pulse 32.4 A Eoss @ 4V 2.54 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 5R38CE see Appendix A 2 Rev.2.2,214612
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Disclaimer............................................................................ 14 3 Rev.2.2,214612
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID Pulsed drain current 2) ID,pulse 32.4 A TC=25 C 9.9 6.3 4. A TC = 25 C; TO22 TC = 25 C; TO22 FullPAK TC = 1 C; TO22 FullPAK Avalanche energy, single pulse EAS 173 mj ID =4A; VDD = 5V Avalanche energy, repetitive EAR.26 mj ID =4A; VDD = 5V Avalanche current, repetitive IAR 4. A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...4V Gate source voltage VGS 2 3 2 3 V static; AC (f>1 Hz) Power disspiation Ptot 29.2 W TC=25 C Operating and storage temperature Tj,Tstg 4 15 C Mounting torque 5 Ncm M2.5 screws Continuous diode forward current IS 5.4 A TC=25 C Diode pulse current 2) IS,pulse 32.4 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C Insulation withstand voltage for TO22 FullPAK VISO 25 V Vrms,TC=25 C,t=1min 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.28 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4 Rev.2.2,214612
4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 5 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=.26mA Zero gate voltage drain current IDSS 1 1 µa VDS=5V,VGS=V,Tj=25 C VDS=5V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).34.89.38 Ω VGS=13V,ID=3.2A,Tj=25 C VGS=13V,ID=3.2A,Tj=15 C Gate resistance RG 3 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 584 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 4 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 32 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 133 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 7.2 ns Rise time tr 5.6 ns Turnoff delay time td(off) 35 ns Fall time tf 8.6 ns VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω VDD=4V,VGS=13V,ID=3.9A, RG=3.4Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 3.1 nc VDD=4V,ID=3.9A,VGS=to1V Gate to drain charge Qgd 13.1 nc VDD=4V,ID=3.9A,VGS=to1V Gate charge total Qg 24.8 nc VDD=4V,ID=3.9A,VGS=to1V Gate plateau voltage Vplateau 5.3 V VDD=4V,ID=3.9A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 5 Rev.2.2,214612
Table7Reversediodecharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode forward voltage VSD.85 V VGS=V,IF=3.9A,Tj=25 C Reverse recovery time trr 27 ns VR=4V,IF=3.9A,diF/dt=1A/µs Reverse recovery charge Qrr 1.7 µc VR=4V,IF=3.9A,diF/dt=1A/µs Peak reverse recovery current Irrm 15.5 A VR=4V,IF=3.9A,diF/dt=1A/µs 6 Rev.2.2,214612
5Electricalcharacteristicsdiagrams Powerdissipation(FullPAK) 4 Max.transientthermalimpedance(FullPAK) 1 1.5 3 1.2.1 Ptot[W] 2 ZthJC[K/W].5.2 1 1 1.1 single pulse 4 8 12 16 TC[ C] Ptot=f(TC) 1 2 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(FullPAK)Tj=25 C 1 2 Safeoperatingarea(FullPAK)Tj=8 C 1 2 1 1 1 µs 1 1 1 µs 1 µs 1 µs ID[A] 1 1 µs 1 ms 1 ms ID[A] 1 1 µs 1 ms 1 ms 1 1 DC 1 1 DC 1 2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 7 Rev.2.2,214612
Typ.outputcharacteristicsTj=25 C 4 Typ.outputcharacteristicsTj=125 C 25 35 3 2 V 1 V 2 2 V 1 V 25 8 V 15 8 V 7 V ID[A] 2 15 7 V ID[A] 1 6 V 1 6 V 5.5 V 5 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 5 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Typ.drainsourceonstateresistance 1.4 Drainsourceonstateresistance 1.2 1. 1.2 5 V 5.5 V 6 V 6.5 V 7 V.8 98% RDS(on)[Ω] 1. RDS(on)[Ω].6 typ 1 V.4.8.2.6 5 1 15 2 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS. 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=3.2A;VGS=13V 8 Rev.2.2,214612
Typ.transfercharacteristics Typ.gatecharge 35 1 3 25 C 9 8 12 V 25 7 4 V ID[A] 2 15 15 C VGS[V] 6 5 4 1 3 2 5 1 2 4 6 8 1 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 1 2 3 Qgate[nC] VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD Avalancheenergy 2 18 16 14 Drainsourcebreakdownvoltage 58 56 54 EAS[mJ] 12 1 8 VBR(DSS)[V] 52 5 6 48 4 2 46 25 5 75 1 125 15 175 Tj[ C] EAS=f(Tj);ID=4A;VDD=5V 44 5 25 25 5 75 1 125 15 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9 Rev.2.2,214612
Typ.capacitances 1 4 Typ.Cossstoredenergy 4. 3.5 1 3 Ciss 3. 2.5 C[pF] 1 2 Coss Eoss[µJ] 2. 1.5 1 1 Crss 1..5 1 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=1MHz. 1 2 3 4 5 VDS[V] Eoss=f(VDS) Forwardcharacteristicsofreversediode 1 2 1 1 IF[A] 125 C 25 C 1 1 1.4.6.8 1. 1.2 1.4 VSD[V] IF=f(VSD);parameter:Tj 1 Rev.2.2,214612
6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 11 Rev.2.2,214612
7PackageOutlines DIM MILLIMETERS INCHES MIN MAX MIN MAX A 4.5 4.9.177.193 A1 2.34 2.85.92.112 A2 2.42 2.86.95.113 b.65.9.26.35 b1.95 1.38.37.54 b2.95 1.51.37.59 b3.65 1.38.26.54 b4.65 1.51.26.59 c D D1 E e e1 N H L L1 øp Q.4.63 15.67 16.15 8.97 9.83 1. 1.65 2.54 (BSC) 28.7 12.78 2.83 2.95 3.15 5.8 3 29.75 13.75 3.45 3.38 3.5.16.617.353.394 1.13.53.111.116.124.387.419.1 (BSC).2 3.25.636 1.171.541.136.133.138 DOCUMENT NO. Z8B3319 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE 55214 REVISION 4 5mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 12 Rev.2.2,214612
8AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 13 Rev.2.2,214612
RevisionHistory Revision:214612,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2. 21168 Release of final data sheet 2.1 211616 2.2 214612 Release of final datasheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14 Rev.2.2,214612