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Dual Notebook Power Supply N-Channel PowerTrench SyncFet October 26 General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. contains two unique 3V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch () is designed with specific emphasis on reducing switching losses while the lowside switch () is optimized to reduce conduction losses. also includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. Features : Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.2A, 3V R DS(on) = 5 mω @ V GS = V R DS(on) = 7.5 mω @ V GS = 4.5V : Optimized for low switching losses Low gate charge (85.5 nc typical) 6.9A, 3V R DS(on) = 2 mω @ V GS = V R DS(on) = 26 mω @ V GS = 4.5V D2 SO-8 D2 DD 5 4 6 3 G2 SG S2 Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 3 3 V V GSS Gate-Source Voltage ±6 ±6 V I D Drain Current - Continuous (Note a) 8.2 6.9 A - Pulsed 3 2 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note a).6 7 8 (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 2mm 25 units 2 26 Fairchild Semiconductor Corporation Rev C2(W)
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = ma V GS = V, I D = 25 ua 3 3 V BVDSS Breakdown Voltage I D = ma, Referenced to 25 C 23 T J Temperature Coefficient I D = 25 µa, Referenced to 25 C 24 mv/ C I DSS Zero Gate Voltage Drain V DS = 24 V, V GS = V 5 Current µa I GSS Gate-Body Leakage V GS = ±6 V, V DS = V All ± na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma V DS = V GS, I D = 25 µa VGS(th) Gate Threshold Voltage I D = ma, Referenced to 25 C T J Temperature Coefficient I D = 25 ua, Referenced to 25 C RDS(on) Static Drain-Source V GS = V, I D = 8.2A On-Resistance V GS = V, I D = 8.2 A, T J = 25 C V GS = 4.5 V, I D = 7.6 A V GS = V, I D = 6.9 A V GS = V, I D = 6.9 A, T J = 25 C V GS = 4.5 V, I D = 6.2 A I D(on) On-State Drain Current V GS = V, V DS = 5 V g FS Forward Transconductance V DS = V, I D = 8.2 A V DS = V, I D = 6.9 A Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, f =. MHz C oss Output Capacitance C rss Reverse Transfer Capacitance R G Gate Resistance V GS = 5 mv, f =. MHz.5.9 2 5 5 6 24 9 3 2 42 4 3 3 5 24 7.5 2 33.5 26 285 8 54 25 2 9 2.844444.9 2.6 4.6 V mv/ C mω A S pf pf pf Ω Rev C2(W)
Electrical Characteristics (continued) T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, 2 ns V GS = V, R GEN = 6 Ω 2 t r Turn-On Rise Time 8 6 ns 7 4 t d(off) Turn-Off Delay Time 5 8 ns 27 43 t f Turn-Off Fall Time 7 3 ns 4 8 Q g Total Gate Charge : 25 35 nc Q gs Gate-Source Charge V DS = 5 V, I D = 7.9 A, V GS = 5 V 8 6 2 nc Q gd Gate-Drain Charge : V DS = 5 V, I D = 6.5 A, V GS = 5 V 3 7 3 nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current 2.3.3 A t RR Reverse Recovery Time I F = 8.2 A, 25 ns Q RR Reverse Recovery Charge d if/d t = 3 A/µs (Note 3) 9 nc t RR Reverse Recovery Time I F = 6.9 A, 23 ns Q RR Reverse Recovery Charge d if/d t = A/µs (Note 3) nc V SD Drain-Source Diode Forward V GS = V, I S = 2.3 A (Note 2).4 7 V Voltage V GS = V, I S =.3 A (Note 2).53.2 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 78 C/W when mounted on a.5in 2 pad of 2 oz copper b) 25 C/W when mounted on a.2 in 2 pad of 2 oz copper c) 35 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. See SyncFET Schottky body diode characteristics below. Rev C2(W)
Typical Characteristics for 3 V GS = V 4.5V 2 3.5V 3.V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6.4.2 V GS = 3.V 3.5V 4.V 4.5V 6.V V.5.5 2 V DS, DRAIN-SOURCE VOLTAGE (V).8 2 3 Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.4.2.8 I D = 8.2A V GS = V R DS(ON), ON-RESISTANCE (OHM).35.3.25.2.5. T A = 25 o C T A = 25 o C I D = 4.A.6-5 -25 25 5 75 25 T J, JUNCTION TEMPERATURE ( o C).5 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 3 25 2 5 5 V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A).. V GS = V T A = 25 o C 25 o C -55 o C.5 2 2.5 3 V GS, GATE TO SOURCE VOLTAGE (V)...2.3.4.5.6 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C2(W)
Typical Characteristics for V GS, GATE-SOURCE VOLTAGE (V) V I D =8.2A DS = V 8 2V 6 4 2 5V CAPACITANCE (pf) 4 3 2 C rss C oss C iss f = MHz V GS = V 2 3 4 5 Q g, GATE CHARGE (nc) 5 5 2 25 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C DC s s ms ms ms µs P(pk), PEAK TRANSIENT POWER (W) 4 3 2 SINGLE PULSE R θja = 35 C/W T A = 25 C.. V DS, DRAIN-SOURCE VOLTAGE (V)... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5.2..5.2. SINGLE PULSE..... t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. R θja (t) = r(t) * R θja R θja = 35 C/W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Rev C2(W)
Typical Characteristics for 2 4.5V 2.2 5 5 V GS = V 3.5V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8.6.4.2 V GS = 3.5V 4.V 4.5V 6.V V.5.5 2 V DS, DRAIN TO SOURCE VOLTAGE (V).8 5 5 2 Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6.4.2.8 I D = 6.9A V GS = V R DS(ON), ON-RESISTANCE (OHM).75.5.25 T A = 25 o C T A = 25 o C I D = 3.5A.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 2 5 5 V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 C.5 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V)..2.4.6.8.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C2(W)
Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) 5 V DS = V I D = 6.9A 4 2V 3 2 5V CAPACITANCE (pf) 2 8 6 4 2 C oss C iss f = MHz V GS = V 2 4 6 8 Qg, GATE CHARGE (nc) C rss 5 5 2 25 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C µs ms ms ms s s DC... V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 5 4 3 2... t, TIME (sec) SINGLE PULSE R θja = 35 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure 2. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5.2..5.2. SINGLE PULSE..... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 35 o C/W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure 2. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev C2(W)
Typical Characteristics (continued) This section copied from FDS6984S datasheet SyncFET Schottky Body Diode Characteristics Fairchild s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the. 3A/DIV Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A).... 25 o C 25 o C. 2 3 V DS, REVERSE VOLTAGE (V) ns/div Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 22. SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS669A). 3A/DIV V ns/div Figure 23. Non-SyncFET (FDS669A) body diode reverse recovery characteristic. Rev C2(W)
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