Features. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10

Similar documents
LET9060C. RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs. Features. Description

SD4931. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

STAC4932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

Gate. Order codes Package Packaging

1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12

PD54003L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs. Features. Description

STAC3932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

RefTitle1 PD84008L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs. Features. Description

SD3932. RF power transistors HF/VHF/UHF N-channel MOSFETs. Features. Description

Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features

PD RF power transistor the LdmoST plastic family. Features. Description

Gate. Order codes Package Packing. November 2012 Doc ID Rev 1 1/18

SD56120M. RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs. General features. Description.

LM323. Three-terminal 3 A adjustable voltage regulators. Description. Features

N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary

MJB44H11T4-A. Automotive-grade low voltage NPN power transistor. Features. Applications. Description

Order code Package Packing

STTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description

Features. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube

Gate. Order code Package Packing

SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection

STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

LD A, very low drop voltage regulators. Features. Description. Table 1. Device summary

Gate. Order code Package Packing

MMBTA42. Small signal NPN transistor. Features. Applications. Description

Gate. Order code Package Packing

Gate. Order code Package Packing

STTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features

STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

DSL03. Secondary protection for VDSL2 lines. Description. Features. Complies with the following standards

Low noise and low drop voltage regulator with shutdown function. Description

FERD15S50. Field effect rectifier. Features. Description

Obsolete Product(s) - Obsolete Product(s)

Description. Table 1. Device summary table. Order code Temperature range Package Packing Marking SO-14. (automotive grade) (1)

Obsolete Product(s) - Obsolete Product(s)

Features. Description. Table 1. Device summary. Quality Level. Engineering Model

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description

Gate. Order code Package Packing

Obsolete Product(s) - Obsolete Product(s)

2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram

PD RF power transistor The LdmoST plastic family. Features. Description

N-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.

STP90NF03L STB90NF03L-1

Obsolete Product(s) - Obsolete Product(s)

SD2942. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description

STPSC20H065C. 650 V power Schottky silicon carbide diode. Description. Features

Obsolete Product(s) - Obsolete Product(s)

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description

N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging

STF40NF03L STP40NF03L

SD HF/VHF/UHF RF power N-channel MOSFETs. Features. Description

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram

DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description

Description. Table 1. Device summary. Order code Temp. range Package Packing Marking

1 Diagram Pin configuration Typical application Maximum ratings Electrical characteristics... 7

LD39030SJ285R. 300 ma low quiescent current soft-start, low noise voltage regulator. Applications. Description. Features

MEMS audio surface-mount bottom-port silicon microphone with analog output. Description. Table 1. Device summary

Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.

LD A, very low drop voltage regulators. Description. Features

SD56120M RF POWER TRANSISTORS The LdmoST FAMILY

STB160N75F3 STP160N75F3 - STW160N75F3

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

N-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.

D44H8 - D44H11 D45H8 - D45H11

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

Description. Table 1. Device summary SOT-223 DPAK TO-220

Obsolete Product(s) - Obsolete Product(s)

LM217M, LM317M. Medium current 1.2 to 37 V adjustable voltage regulator. Description. Features

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device

LM248, LM348. Four UA741 quad bipolar operational amplifiers. Description. Features

STP36NF06 STP36NF06FP

TS881. Rail-to-rail 0.9 V nanopower comparator. Description. Features. Applications

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STB120N10F4, STP120N10F4

Features. Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

Contents STL13NM60N Contents 1 Electrical ratings Electrical characteristics

Obsolete Product(s) - Obsolete Product(s)

STD30NF03L STD30NF03L-1

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube

Gate. Order codes Packages Packaging. PD85006-E PowerSO-10RF (formed lead) Tube PD85006TR-E PowerSO-10RF (formed lead) Tape and reel

LD A low drop positive voltage regulator: adjustable and fixed. Features. Description

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel

STB160N75F3 STP160N75F3 - STW160N75F3

BALF D3. 50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter. Description. Features.

Features. Description. Table 1. Device summary. Agency specification

Description. Table 1. Device summary. Order codes

CBTVS2A12-1F3. Circuit breaker with transient voltage suppressor. Features. Description. Complies with the following standards:

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

N-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging

Description. Table 1. Device summary. Order code Temp. range Package Packing Marking

Description. Table 1. Device summary. Order code Temp. range Package Packaging Marking

STTH6003. High frequency secondary rectifier. Description. Features

N-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.

STPS2H100. Power Schottky rectifier. Features. Description

Transcription:

180 W, 32 V Wideband LDMOS transistor Features Datasheet - target specification Excellent thermal stability Common source configuration push-pull P OUT = 180 W with 19 db gain @ 860 MHz BeO-free package Description M246 Epoxy sealed Figure 1. Pin connection The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. 1 2 1-2 Drain 4-5 Gate 5 4 3 Source Table 1. Device summary Order code Packaging Branding LET9180 M246 LET9180 May 2013 DocID024706 Rev 1 1/10 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. www.st.com 10

Contents LET9180 Contents 1 Electrical data.............................................. 3 1.1 Maximum ratings............................................ 3 1.2 Thermal data............................................... 3 2 Electrical characteristics..................................... 4 2.1 Static...................................................... 4 2.2 Dynamic................................................... 4 3 Impedance data............................................. 5 4 Typical performances........................................ 6 5 Package mechanical data..................................... 7 6 Revision history............................................ 9 2/10 DocID024706 Rev 1

Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-source voltage 80 V V GS Gate-source voltage - 10 / + 15 V I D Drain current 24 A P DISS Power dissipation 318 W T J Max. operating junction temperature 200 C T STG Storage temperature -65 to +150 C 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R thjc Junction - case thermal resistance 0.55 C/W DocID024706 Rev 1 3/10

Electrical characteristics LET9180 2 Electrical characteristics T CASE = +25 o C 2.1 Static Table 4. Static (per section) Symbol Test conditions Min Typ Max Unit V (BR)DSS V GS = 0, I DS = 10 ma 80 V I DSS V GS = 0, V DS = 28 V 1 μa I GSS V GS = 5 V, V DS = 0 1 μa V GS(Q) V DS = 28 V, I D = 100 ma 2.0 5.0 V V DS(ON) V GS = 10 V, I D = 3 A 0.8 1.2 V G FS V DS = 10 V, I D = 3 A 2.5 mho C ISS V GS = 0, V DS = 32 V, f = 1 MHz 70 pf C OSS V GS = 0, V DS = 32 V, f= 1 MHz 36 pf C RSS V GS = 0, V DS = 32 V, f = 1 MHz 0.9 pf 2.2 Dynamic Table 5. Dynamic (V DD = 32 V, I DQ = 500 ma) Symbol Test conditions Min Typ Max Unit P OUT f = 860 MHz, P IN = 3 W 150 175 G PS P OUT = 180 W, f = 860 MHz 18 20 - db η D P OUT = 180 W, f = 860 MHz 60 69 % Load Mismatch P OUT = 220 W, f = 860 MHz all phase angles W 65:1 VSWR 4/10 DocID024706 Rev 1

Impedance data 3 Impedance data Figure 2. Impedance data D Z DL Typical input Typical drain load G Zin S Table 6. Impedance data Frequency MHz Z source (Ω) Z load (Ω) 860 TBD TBD DocID024706 Rev 1 5/10

Typical performances LET9180 4 Typical performances Figure 3. Gain vs output power Figure 4. Efficiency vs output power Gain (db) 21 19 Freq= 860MHz IDQ= 500mA AM17382v1 Efficiency (%) 90 70 Freq= 860MHz IDQ= 500mA 30V 32V 36V 34V AM17383v1 28V 17 36V 50 15 28V 30 30V 32V 34V 13 0 40 80 120 160 200 240 Pout(W) 10 0 40 80 120 160 200 240 Pout(W) 6/10 DocID024706 Rev 1

Package mechanical data 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID024706 Rev 1 7/10

Package mechanical data LET9180 Table 7. M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data Dim. mm. Inch Min Typ Max Min Typ Max A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86.900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 Figure 5. Package dimensions Controlling dimension: Inches Ref. 7145054A 8/10 DocID024706 Rev 1

Revision history 6 Revision history Table 8. Document revision history Date Revision Changes 29-May-2013 1 Initial release. DocID024706 Rev 1 9/10

Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 DocID024706 Rev 1