QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically provides 47 dbm of saturated output power and 22 db of large-signal gain while achieving 8 % power-added efficiency. The QPA1 can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The QPA1 is matched to ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. Product Features Frequency Range: 2.8 3.2 GHz Pout: 47 dbm (PIN = dbm) Large Signal Gain: 22 db (PIN = dbm) PAE: 8 % (PIN = dbm) Bias: VD = V, IDQ = 2 ma, VG = 2.8 V (Typ) Supports Long Pulse Operation Package Dimensions: 7. x 7. x.8 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details. 1 2 3 4 RF In 6 RF In 7 8 9 1 11 12 48 47 46 4 44 43 42 41 4 39 38 37 36 3 34 33 32 31 RF Out 3 RF Out 29 28 27 26 Applications Military Radar Commercial Radar 13 14 1 16 17 18 19 2 21 22 23 24 Ordering Information Part ECCN Description QPA1 EAR99 2.8 3.2 GHz W GaN Power Amplifier Data Sheet Rev. D, June 14, 217-1 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Electrical Specifications Test conditions, unless otherwise noted: C, VD = V, IDQ = 2 ma, Pulse Width = 1 us, Duty Cycle = 1% Parameter Min Typ Max Units Operational Frequency Range 2.8 3. 3.2 GHz Output Power @ PIN = dbm Frequency = 3. GHz 46 47 dbm Power Added Efficiency @ PIN = dbm Frequency = 3. GHz 8 % Small Signal Gain Frequency = 3. GHz db Input Return Loss Frequency = 3. GHz 11 db Output Return Loss Frequency = 3. GHz 13 db Output Power Temperature Coefficient.4 dbm/ C Recommended Operating Drain Voltage V Recommended Operating Conditions Parameter Value Drain Voltage V Drain Current (quiescent, IDQ) 2 ma Drain Current (under drive, ID) 3.7 A Gate Voltage -2.8 V Operating Temperature Range 4 to 8 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. D, June 14, 217-2 of 13 - www.qorvo.com
Performance Plots Large Signal (Pulsed) QPA1 2.8 3.2 GHz Watt GaN Amplifier Test conditions unless otherwise noted: Temp. = C, VD = V, IDQ = 2 ma, PW = 1 us, Duty Cycle = 1% 49 Output Power vs. Freq. vs. Temp. P IN = dbm 49 Output Power vs. Freq. vs. Input Power Output Power (dbm) 48 47 46 4-4 C + C +8 C 44 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 Output Power (dbm) 48 47 46 22 dbm dbm 4 23 dbm 26 dbm 24 dbm 44 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 7 Power Added Eff. vs. Freq. vs. Temp. P IN = dbm 7 Power Added Eff. vs. Freq. vs. Input Power Power Added Eff. (%) 6 6-4 C 4 + C +8 C 4 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 Power Added Eff. (%) 6 6 22 dbm dbm 4 23 dbm 26 dbm 24 dbm 4 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4. Drain Current vs. Freq. vs. Temp. P IN = dbm. Drain Current vs. Freq. vs. Input Power Drain Current (A) 4. 4. 3. 3. Drain Current (A) 4. 4. 3. 3. 2. -4 C + C +8 C 2. 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 22 dbm dbm 2. 23 dbm 26 dbm 24 dbm 2. 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 Data Sheet Rev. D, June 14, 217-3 of 13 - www.qorvo.com
Performance Plots Large Signal (Pulsed) QPA1 2.8 3.2 GHz Watt GaN Amplifier Test conditions unless otherwise noted: Temp. = C, VD = V, IDQ = 2 ma, PW = 1 us, Duty Cycle = 1% Output Power vs. Input Power vs. Freq. 7 PAE vs. Input Power vs. Freq. Output Power (dbm) 4 4 3 3 2.8 GHz 3. GHz 3.2 GHz 2 4 6 8 1 12 14 16 18 2 22 24 26 Power Added Eff. (%) 6 4 3 2 1 2.8 GHz 3. GHz 3.2 GHz 2 4 6 8 1 12 14 16 18 2 22 24 26 3 Gain vs. Input Power vs. Freq. 4. Drain Current vs. Input Power vs. Freq. 3 3. Gain (db) 2 1 1 2.8 GHz 3. GHz 3.2 GHz 2 4 6 8 1 12 14 16 18 2 22 24 26 Drain Current (A) 3. 2. 2. 1. 1... 2.8 GHz 3. GHz 3.2 GHz 2 4 6 8 1 12 14 16 18 2 22 24 26 Gate Current vs. Input Power vs. Freq. Gate Current (ma) 11 9 7 3 1-1 2.8 GHz 3. GHz 3.2 GHz 2 4 6 8 1 12 14 16 18 2 22 24 26 Data Sheet Rev. D, June 14, 217-4 of 13 - www.qorvo.com
Performance Plots Large Signal (Pulsed) QPA1 2.8 3.2 GHz Watt GaN Amplifier Test conditions unless otherwise noted: Temp. = C, VD = V, IDQ = 2 ma, PW = 1 us, Duty Cycle = 1% Output Power (dbm) 4 4 3 3 2 1 1 Output Power vs. Input Power vs. Temp. Freq. = 3. GHz -4 C + C +8 C 2 4 6 8 1 12 14 16 18 2 22 24 26 Power Added Eff. (%) 7 6 4 3 2 1 Freq. = 3. GHz PAE vs. Input Power vs. Temp. -4 C + C +8 C 2 4 6 8 1 12 14 16 18 2 22 24 26 3 3 Freq. = 3. GHz Gain vs. Input Power vs. Temp. 4. 3. Drain Current vs. Input Power vs. Temp. Freq. = 3. GHz Gain (db) 2 1 1-4 C + C +8 C 2 4 6 8 1 12 14 16 18 2 22 24 26 Drain Current (A) 3. 2. 2. 1. 1... -4 C + C +8 C 2 4 6 8 1 12 14 16 18 2 22 24 26 Gate Current (ma) 14 12 1 8 6 4 2 Gate Current vs. Input Power vs. Temp. Freq. = 3. GHz -4 C + C +8 C 2 4 6 8 1 12 14 16 18 2 22 24 26 Data Sheet Rev. D, June 14, 217 - of 13 - www.qorvo.com
Performance Plots Small Signal Test conditions unless otherwise noted: Temp. = C, VD = V, IDQ = 2 ma QPA1 2.8 3.2 GHz Watt GaN Amplifier S21 (db) 3 Gain vs. Freq. vs. Temp. 3 2 1 1-4 C + C +8 C 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. S21 (db) 3 28 26 24 22 2 18 16 14 12 Gain vs. Frequency vs. V D 22 V 24 V V 26 V 1 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. Input RL vs. Freq. vs. Temp. Input RL vs. Frequency vs. V D -1-1 S11 (db) -1-2 S11 (db) -1-2 - -4 C + C +8 C -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. - 22 V 24 V V 26 V -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. Output RL vs. Freq. vs. Temp. Output RL vs. Frequency vs. V D -1-1 S22 (db) -1-2 S22 (db) -1-2 - -4 C + C +8 C -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. - 22 V 24 V V 26 V -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. Data Sheet Rev. D, June 14, 217-6 of 13 - www.qorvo.com
Performance Plots Small Signal Test conditions unless otherwise noted: Temp. = C, VD = V, IDQ = 2 ma QPA1 2.8 3.2 GHz Watt GaN Amplifier 3 Gain vs. Frequency vs. I DQ Input RL vs. Freq. vs. I DQ S21 (db) 3 2 1 1 1 ma 2 ma 3 ma 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. S11 (db) -1-1 -2-1 ma 2 ma 3 ma -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. Output RL vs. Freq. vs. I DQ S22 (db) -1-1 -2-1 ma 2 ma 3 ma -3 2.2 2.4 2.6 2.8 3. 3.2 3.4 3.6 3.8 4. Data Sheet Rev. D, June 14, 217-7 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) Tbase = 8 C 1.4 C/W Channel Temperature (TCH) (Quiescent) VD = V, IDQ = 2 ma 92. C Median Lifetime (TM) PDISS =. W 2.9E12 Hrs Thermal Resistance (θjc) (1) Tbase = 8 C, VD = V, IDQ = 2 ma, Freq = 2.8 GHz,.8 C/W Channel Temperature (TCH) (Under RF drive) ID_Drive = 3.6 A, PIN = 26 dbm, POUT = 46.6 dbm, 118. C Median Lifetime (TM) PDISS = 33.9 W, PW = 1 us, DC = 1% 1.3E11 Hrs Thermal Resistance (θjc) (1) Tbase = 8 C, VD = V, IDQ = 2 ma, Freq = 3.1 GHz,.88 C/W Channel Temperature (TCH) (Under RF drive) ID_Drive = 3.8 A, PIN = 26 dbm, POUT = 47.1 dbm, 123. C Median Lifetime (TM) PDISS = 39.4 W, PW = 1 us, DC = 1%.43E1 Hrs Notes: 1. Thermal resistance measured to back of package. Median Lifetime Test Conditions: VD = +4 V; Failure Criteria = 1 % reduction in ID_MAX during DC Life Testing Median Lifetime (Hours) QGaN Median Lifetime vs. T CH 1E+18 1E+17 1E+16 1E+1 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+ FET13 1E+4 7 1 1 1 17 2 2 27 Channel Temperature ( C) Disspiated Power (W) QPA1 Pdiss vs. Frequency 4 4 3 3 2 1 22V 1us 1% C 1 24V 1us 1% C V 1us 1% C V 1us 1% 8C 2.7 2.8 2.9 3. 3.1 3.2 3.3 3.4 Data Sheet Rev. D, June 14, 217-8 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Applications Circuit V G1 V D1 C3 1 pf C6 1 pf R4 1 Ω R6 Ω 48 46 44 38 C12 1 pf C9 1 pf C8.1 uf R8 1 Ω C11.1 uf R1 1 Ω R7 Ω C7 1 uf V G2 V D2 RF In 6,7 3,31 RF Out V G1 V D1 C13 1 pf C16 1 pf R13 1 Ω 13 1 17 23 R17 Ω C22 1 pf C19 1 pf R19 1 Ω C23.1 uf R16 1 Ω C2.1 uf C21 1 uf R18 Ω V D2 V G2 Notes: 1. VG and VD must be biased from both sides (top and bottom). Bias Up Procedure 1. Set ID limit to 6mA, IG limit to 4mA 2. Set VG to 6. V 3. Set VD + V 4. Adjust VG more positive until IDQ = 2mA (VG ~ 2.8 V Typical). Apply RF signal Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 6.V. Ensure IDQ ~ ma 3. Set VD to V 4. Turn off VD supply. Turn off VG supply Data Sheet Rev. D, June 14, 217-9 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Evaluation Board and Mounting Detail RF Layer is.8 thick Rogers Corp. RO43C (εr = 3.3). Metal layers are. oz. copper. The microstrip line at the connector interface is optimized for the Southwest Microwave end launch connector 192-2A. Bill of Materials Ref. Des. Component Value Manuf. Part Number C7, C21 Surface Mount Cap. CAP, 126, 1uF, 2%, V, 2%, XR Various C3, C6, C9, C12, C13, C16, C19, C22 Surface Mount Cap. CAP, 42, 1pF, 1%, 1V, X7R Various C8, C11, C2, C23 Surface Mount Cap. CAP, 42,.1uF, ±1%, V, X7R Various R8, R1, R16, R19 Surface Mount Res. RES, 1 OHM ± % 42 Various R4, R13 Surface Mount Res. RES, 1 OHM 1/1W ± % 63 Various R6, R7, R16, R18 Surface Mount Res. RES, OHM % 63 Various Data Sheet Rev. D, June 14, 217-1 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Mechanical Information Pin Description Pin Number Symbol Description 1, 8-12, 14, 16, 18-22, 24-29, 32-37, 39-43, 4, 47 NC No connection. Can be grounded on PCB if desired. 6, 7 RF Input Ohm RF input. Pad is capacitively coupled to block on-chip DC voltages. 13, 48 VG1 1 st Stage Gate Voltage; bias network is required; must be biased from both sides (VG1 and VG2 can be tied together in application) 1, 46 VD1 1 st Stage Drain Voltage; bias network is required; must be biased from both sides (VD1 and VD2 can be tied together in application) 17, 44 VG2 2 nd Stage Gate Voltage; bias network is required; must be biased from both sides (VG1 and VG2 can be tied together in application) 23, 38 VD2 2 nd Stage Drain Voltage; bias network is required; must be biased from both sides (VD1 and VD2 can be tied together in application) 3, 31 RF Output Ohm RF output. Pad is capacitively coupled to block on-chip DC voltages. Pad is DC grounded. 49 GND Ground connection. Data Sheet Rev. D, June 14, 217-11 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Drain Current (ID1/ID2) Gate Voltage Range Gate Current (IG) Dissipated Power (PDISS) 1 Input Power ( Ω, 8 C) Value / Range 4 V.77/3.84 A 8 to V See I G_Max plot 44. W 33 dbm Input Power (9:1 VSWR, 8 C) 33 dbm Channel Temperature, TCH 27 C Mounting Temperature (3 seconds) 26 C Storage Temperature to 1 C Note: 1 TBASE = 8 C, TCH = 2 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Maximum Gate Current (ma) 16 14 12 1 8 6 4 2 QPA1 Ig_max vs. T CH vs. Stage Stage 1 Stage 2 Total Ig_max 12 13 14 1 16 17 18 19 2 21 22 23 Channel Temperature ( C) Recommended Soldering Temperature Profile Data Sheet Rev. D, June 14, 217-12 of 13 - www.qorvo.com
QPA1 2.8 3.2 GHz Watt GaN Amplifier Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class B ANSI/ESD/JEDEC JS-1 ESD Charge Device Model (CDM) Class C3 ANSI/ESD/JEDEC JS-2 MSL Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-2 Lead free solder, 26 C. Solder profiles available upon request. RoHS Compliance This product is compliant with the 211/6/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 21/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C1H12Br42) Free PFOS Free SVHC Free Qorvo Green Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-89-8163 Web: www.qorvo.com Email: customer.support@qorvo.com For technical questions and application information: Email: sjcapplications.engineering@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 216 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. D, June 14, 217-13 of 13 - www.qorvo.com