LN-KN Opto-Device & Custom LED STEM TYPE LED LAMP LN-KN High Beam Red LED LN-KN is an AlGaInP LED mounted on TO- stem and hermetically sealed with spherical glass ball lens can being designed for high beam uses.. On forward bias it emits a spectral band of radiation, which peaks at nm. Specifications ) Product Name LED Lamp ) Type No. LN-KN ) Chip () Chip Material AlGaInP () Chip dimension um*um () Peak Wavelength nm typ. ) Package () Type TO- stem () Lens Spherical Glass Lens () Cap Gold plated Outer dimension (Unit: mm) Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Power Dissipation PD mw Ta= C Forward Current IF ma Ta= C Pulse Forward Current IFP ma Ta= C Reverse Voltage VR V Ta= C Thermal Resistance Rthja K/W Junction Temperature Tj C Operating Temperature TOPR - ~ + C Storage Temperature TSTG - ~ + C Soldering Temperature TSOL C Pulse Forward Current condition: Duty=% and Pulse Width=us. Soldering condition: Soldering condition must be completed within seconds at C. Electro-Optical Characteristics [Ta= C] Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=mA.. V If=mA.. Radiated Power PO IF=mA. mw Radiant Intensity IE IF=mA mw/sr Peak Wavelength P IF=mA nm Half Width IF=mA nm Wavelength(dominant) D IF=mA nm Wavelength(centroid) C IF=mA nm Viewing Half Angle IF=mA ±. deg. Radiated Power is measured by S-. Radiant Intensity is measured by Tektronix J-. EPITEX INC.: - Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++--- Fax: ++---
Opto-Device & Custom LED STEM TYPE LED LAMP LN-KN Forward Current (ma) Forward Curent - Forward Voltage (ta= C, tw=ms, Duty=%). Relative Radiant Intensity - Forward Current (ta= C, tw=ms, Duty=%) ma Standard.... Forward Voltage (V).. Forward Current (ma) Forward Current - Pulse Duration Allowable Forward Current - Forward Current Ifp [ma] khz khz Hz Hz Hz Allowable Forward Current(mA) Rthja=K/W - - - Duration tw [ms] ( C) EPITEX INC.: - Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++--- Fax: ++---
Opto-Device & Custom LED STEM TYPE LED LAMP LN-KN Forward Voltage (V)...... Forward Voltage - Ambient Temperture If=mA Relative Radiant Intensity - If=mA. Ambient Temperatture ( C). ( C) If=mA Peak Wavelength - Peak Wavelength (nm) ( C) EPITEX INC.: - Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++--- Fax: ++---
Opto-Device & Custom LED STEM TYPE LED LAMP LN-KN Relative Spectral Emission Radiation Characteristics........... (ta= C).... ±.. Wavelength (nm). - - - Angle (deg.) EPITEX INC.: - Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++--- Fax: ++---
Opto-Device & Custom LED STEM TYPE LED LAMP LN-KN Disclaimer Product specifications and data shown in this product catalog are subject to change without notice for the purposes of improving product performance, reliability, design, or otherwise. Product data and parameters in this catalog are typical values based on reasonably up-to-date measurements. Product data and parameters may vary by user application and over time. Products shown in this catalog are intended to be used for general electronic equipment. Products are not guaranteed for applications where product malfunction or failure may cause personal injury or death, including but not limited to life-supporting / saving devices, medical devices, safety devices, airplanes, aerospace equipment, automobiles, traffic control systems, and nuclear reactor control systems. EPITEX INC.: - Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++--- Fax: ++---.