Paper ID: EE23 Proceedings of H6-TYPE IGBT CONFIGURATION FOR SINGLE PHASE GRID CONNECTED TRANSFORMERLESS PHOTOVOLTAIC APPLICATIONS Ms. Tejal S. Bandgar M. Tech (Electrical Power System) Rajarambapu Institute of Technology Maharashtra, India Prof. H. T. Jadhav Professor Electrical Engineering Rajarambapu Institute of Technology Maharashtra, India Abstract All active switches is presented for a proposed high-efficiency photovoltaic inverter, no isolated, grid connected photovoltaic applications. The proposed H6-type configuration features high efficiency over a wide load range, low ground leakage, no need for split capacitors, and low-output ac- distortion. The detailed SPWM scheme, photovoltaic power supply and the power stage of operating principle are described. In this paper not only IGBT, but also MOSFET switch inverter topology explained. The proposed H6 type transformerless inverter topology can be able to reduce strong ground leakage. The single phase IGBT H6-type transformerless grid connected PV system is simulated using MATLAB/SIMULINK. Index term Transformer less inverter; SPWM inverter; Photovoltaic System; Leakage ; Common mode and differential mode characteristics; IGBT Inverter I. INTRODUCTION Grid connected transformer less inverter systems are the trend of future PV system because of their more flexibility, easier to installation due to their plug and play nature, and higher system-level energy harnessing capabilities under shaded or PV manufacturing mismatch conditions as compared to the single or multi string inverters[1] [3]. In the past number of inverter topology has been proposed for the rid connected photovoltaic applications and also the PV ac module applications. In that number of power stages, use of transformers, location of power decoupling capacitors, number of power stages has been proposed for that kind of PV ac module application [4][10]. However this this solutions suffer from following drawbacks: 1) limited output range PV panel available in the markets[6]-[7]: 2) limited life of the electrolytic capacitors for the power decoupling [4]-[5]: 3) strong ground leakage flow due to unipolar pulse width modulation (PWM) scheme used for the grid connected transformerless PV system[8]: 4) high frequency bidirectional converter and low system efficiency[9]-[11]; and 5) increase the complicity and cost of the circuit [12]-[13]. Galvanic isolation for PV application is not required by code a two-stage ac module combining a nonisolated high step-up converter and a high-efficiency inverter with H6- type configuration in an ac module, shown in Fig. 1, can be used to solve the aforementioned issues. This two-stage system configuration can significantly reduce the powerdecoupling capacitance by locating the capacitor in the dc link [2]. And the first stage also can be designed to meet the requirement of the wide input voltage range for the available panels in the market. Reference [14] reported a dc dc converter with a single active switch combining boost, fly back, and charge-pump cir cuits to simultaneously achieve wide input range, high-voltage gain, high efficiency, and low cost with the 20 70 V input, 180-200 V output, and 97.4% peak efficiency as the first part of PV integrated ac module. This paper, however, will concentrate on the second power stage the inverter circuit to obtain high efficiency of the MOSFET dc ac circuit and to avoid the high ground leakage issue. The simplest inverter using hybrid MOSFETs and insulated gate bipolar transistors (IGBTs) with unipolar PWM to achieve high efficiency. The high-side IGBTs serve as line frequency polarity selection switches and lowside MOSFET soperate in high frequency sinusoidal PWM (SPWM) to control the output voltage or. The high efficiency of the hybrid four-switch inverter can be achieved over wide load range because the MOSFETs can avoid the fixed voltage-drop oases and significantly reduce the turnoff losses without tail as compared to the case with IGBTs. However, the hybrid four-switch inverter with unipolar PWM is not suitable for no isolated ac-module application because the high ground Leakage is generated through the parasitic capacitance of the PV panel due to the high-frequency voltage swing at the PV terminals. The severe ground leakage result sin the problems, which include lower efficiency, output distortion, electromagnetic interference (EMI) and safety issue [15][16]. In the given table 1, the leakage value and the disconnection time in seconds is shows as per the VDE 0126 1-1 standard [17]. This paper is presented as follows: Photovoltaic module with their equations 2. Existing MOSFET H6 type topology 3. Common and differential mode characrericts of the existing topology 3. Ground leakage detailed 4. Proposed IGBT H6 type topology and 5. Unipolar and bipolar SPWM with CM and DM charactericts.
Proceedings of Paper ID: EE23 TABLE I LEAKAGE CURRENT RMS AND CORRESPONDING DISCONNECTION TIMES (DIN VDE 0126-1-1) Leakage RMS Disconnection Time (s) value 30 0.3 60 0.15 150 0.04 n : Dimensionless junction material factor K : The Boltzmann constant 1.38*10-23 J/K T : The temperature measured by Celsius q : The electron charge 1.602*10-19 C Simplified mathematical model given by Shaowu Li in [3], but the illuminates the second parts I : II. SYSTEM ANALYSIS Photovoltaic model is presented using the output and input equations of general mathematical mode. In this source is in the parallel with diode and the resistor and series with another resistor [3]. The equivalent circuit of the photovoltaic (PV) cell is depict in the following figure 2. Figure shows the matlab simulink mathematical model of photovoltaic cell model. This is the 400 V photovoltaic matlab model. Fig. 1 Equivalent PV cell model This model is describing the basic equations and C-I characteristics of the photovoltaic cell module are shows in the fig 3 Fig. 2 Matlab model of PV system And : I PV : The cell (A) I ph : The light generated (A) I D : The Shockley diode equation (A). I 0 : The diode saturation (A). R S : The cell series resistance (Ohms). R P : The cell shunt resistance (Ohms). V D : The diode voltage (V). V T : The temperature voltage (V). V PV : The cell voltage (V). Existing MOSFET topology is as shown in the fig. in this system photovoltaic system is connected to the H6 type MOSFET inverter topology. After that +the MOSFET inverter is connected to the grid using the filter. Operation of this topology is detailed in the Fig 4. And the modes of operation are detailed in the fig. 5. Fig. 3 MOSTET H6 type transformer less topology.
Paper ID: EE23 Proceedings of Fig.4 Operation of MOSFET H6 type topology A-Active B-Freewheeling mode in the positive half-cycle of grid c- Active D-Freewheeling mode in the negative half-cycle of grid Fig. 6. PWM scheme for the proposed inverter: (a) signals in time domain; and (b) implemented circuit. III. PROPOSED INVERTER TOPOLOGY Proposed topology with H6 type inverter configuration, which consist of six IGBTs (S1 S6), two freewheeling diode (D1 and D2), and filer (La, Lb and Co). Above circuit is well-matched for no isolated ac-module applications because of the following advantages: 1) high efficiency over a wide load range by using MOSFETs for all active switches since their intrinsic body diodes are naturally inactive; 2) low ground leakage because the voltage applied to the parasitic ground loop capacitance contains only low frequency components; 3) smaller output inductance as compared to that of the common full-bridge inverter with bipolar PWM switching; and 4) low-output ac distortion because there is no need to have dead time for the proposed circuit since the three active switches in the same phase-leg never all turn ON during the same PWM cycle. Fig.5 IGBT H6 type transformerless topology Fig.7 Operation of MOSFET H6 type topology a-active b-freewheeling mode in the positive half-cycle of grid c- Active d-freewheeling mode in the negative half-cycle of grid Fig. 6 shows that, the PWM structure scheme for the proposed inverter. As displayed in Fig. 6(a), the top device in one leg and the bottom device in the other leg are switched simultaneously in the PWM cycle and the middle device operates as a polarity selection switch in the grid cycle. As shown in Fig. 6(b), if the sinusoidal control voltage v control, which is synchronized with output voltage, is higher than the triangular carrier voltage carrier, then the gating voltage G 1 and G 6 are active; otherwise, G 1 and G 6 are inactive. And if v control is higher than zero, the gating voltage G 4 is active; otherwise, G 4 is inactive. Similarly, the comparison of ( v control) with v carrier or zero results in the logical signals to control G 2, G 5, and G 3, respectively. Fig. 7 shows the four topological stages in one grid cycle for the proposed inverter. Note that the point N is the dc-link negative terminal, and the point E is the grid
Proceedings of Paper ID: EE23 negative terminal the four operation modes are briefly described as follows. During the grid positive half cycle, switch S 4 remains ON, whereas S 1, S 6, and D 1 commutate at the PWM switching frequency. When S 1, S 6, and S 4 are ON and the other switches and diodes are OFF, the inductor is charging, as shown in Fig. 7(a). Under the condition that the inductance values of L 1 and L 2 are identical, the inductor voltage can be found as VL1=VL2=0.5(Vdc Vac). (11) And the output voltage vac is calculated by Vac=VdcMsin(ωt) (12) where vdc is the dc-link voltage, M is the modulation index, and ω is the angular frequency of the grid. For simplification, the impedance at the line frequency between neutral line and ground is neglected. From (1) and (2), the ground potential shown in Fig. 7(a) in the charging interval during positive grid half cycle can be expressed Ven1=0.5Vdc[1 (Msin(ωt))]. (13) the free wheel in g interval during the positive grid half cycle shown in Fig. 7(b), the S 1 and S 6 simultaneously turn OFF and S 4 and D 1 are ON. The voltages of the inductor L 1 and L 2 are given as VL1=VL2= 0.5Vac (14) Under the condition that the S 1 and S 6 share the dc-link voltage when they are simultaneously turned off, the voltage Stress of the S 6 can be found as VS6=0.5Vdc. (15) MOSFETs can be employed as all the active switches to achieve higher efficiency than that of the five-switch inverter, and high ground leakage can be avoided just as same as the five-switch inverter. IV. MATLAB SIMULATION OF PROPOSED TOPOLOGY Simulation of proposed topology is as shown in the following fig. and also the matlab simulation of pulse width modulation. For simplification, the impedance at the line frequency between neutral line and ground is also neglected. From (2), (4), and (5), the ground potential shown in Fig.7 (b) in the freewheeling interval during positive grid half cycle can be expressed as Ven2=0.5Vdc[1 (Msin(ωt))]. (16) On the basis of the fact that (6) is identical to (3), the PWM Switching frequency voltage of the ground potential is avoided. The operation modes similarly change during the grid negative half cycle. From Fig. 5(a) (d), it can be seen that the body diodes of the MOSFETs are naturally inactive and the high-frequency voltage of the ground potential is avoided during the whole grid cycle. As a result, Fig.8 MATLAB model of H6 type IGBT inverter and PWM scheme. V. V RESULT ANALYSIS This simulation results are carried uot by using the matlab Simulink software for to compare the operation and analyze and to check overall performance of the H6 type IGBT and MOSFET transformer less grid connected single phase grid connected PV system. The parameters used for the both two topologies are same.pv module and the stray capacitor between the PV module and ground replaced with
Proceedings of Paper ID: EE23 400 V dc source and two capacitors of 75nf each respectively. The grid line voltage is 230 V with frequency is 50 Hz and the switching frequency of switches is 20 khz and power factor is 0.95 lagging. A B Fig.waveform of Van upper, Van middle, Vbn lower. A H6 MOSFET topology B H6type IGBT topology B Fig. Waveform of Grid upper, DM voltage middle and leakage lower. A H6 type MOSFET topology B H6 type IGBT topology Fig. FFT analysis of H6 type IGBT topology The THD of above topology is 0.80% VI. CONCLUSION Fig. FFT analysis of H6 type MOSFET topology The THD of H6 type MOSFET topologies with grid connected system is 3.65%. This paper proposes a H6 type IBGT transformer less topology for a single-phase grid connected PV system. This paper presents the performance of two H6 type topologies and compared with their simulation results. IGBT topology has following advantages over the MOSFET topology: 1 Leakage is reduced as compared with the traditional one. 2 Excellent DM characteristics can be achieved by using the IGBT topology. 3 CM voltage characteristics achieved by IGBT topology as compared with the MOSFET topology. 4 The THD of proposed topology have lower than the MOSFET topology. A
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