TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

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Transcription:

TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market

Edition 2010-12-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2010-12-16 Trademarks of Infineon Technologies AG AURIX, BlueMoon, C166, CanPAK, CIPOS, CIPURSE, COMNEON, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SMARTi, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore, X-GOLD, X-PMU, XMM, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Revision 1.0, 2010-12-16

Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 1 Bi-directional Low Capacitance TVS Diode........................................... 7 1.1 Features........................................................................ 7 1.2 Application Examples.............................................................. 7 2 Product Description.............................................................. 7 3 Characteristics.................................................................. 8 3.1 Electrical Characteristics at T A =25 C, unless otherwise specified............................ 8 3.2 Typical Performance characteristics at T A = 25 C, unless otherwise specified................ 10 4 Application Information.......................................................... 13 5 Ordering information scheme..................................................... 14 6 Package Information............................................................ 15 6.1 PG-SC79-2-1................................................................... 15 7 Date Code Marking.............................................................. 16 Terminology................................................................... 17 Final Data Sheet 4 Revision 1.0, 2010-12-16

List of Figures List of Figures Figure 1 Pin configuration and schematic diagram............................................. 7 Figure 2 Definitions of electrical characteristics............................................... 8 Figure 3 Capacitance characteristics: C L = f(v R )............................................. 10 Figure 4 Reverse characteristics: I R = f(v R )................................................. 10 Figure 5 Reverse TLP characteristics...................................................... 11 Figure 6 Forward TLP characteristics...................................................... 11 Figure 7 Power derating curve: P PK = f(t A ).................................................. 12 Figure 8 Single Chanel, uni-directional TVS protection........................................ 13 Figure 9 Ordering Information Scheme..................................................... 14 Figure 10 PG-SC79-2-1: Package Overview................................................. 15 Figure 11 PG-SC79-2-1: Footprint......................................................... 15 Figure 12 PG-SC79-2-1: Packing.......................................................... 15 Figure 13 PG-SC79-2-1: Marking (example)................................................. 15 Figure 14 Date Code marking for Discrete packages with one digit (SCD8, SC79, SC75 1) ) CES-Code.... 16 Final Data Sheet 5 Revision 1.0, 2010-12-16

List of Tables List of Tables Table 1 Ordering information............................................................ 7 Table 2 Maximum Rating at T A = 25 C, unless otherwise specified............................... 8 Table 3 DC characteristics at T A = 25 C, unless otherwise specified............................. 8 Table 4 RF characteristics at T A = 25 C, unless otherwise specified............................. 9 Table 5 ESD characteristics at T A = 25 C, unless otherwise specified............................ 9 Final Data Sheet 6 Revision 1.0, 2010-12-16

Bi-directional Low Capacitance TVS Diode 1 Bi-directional Low Capacitance TVS Diode 1.1 Features ESD / transient protection according to: IEC61000-4-2 (ESD): ±25 kv (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 2.5 A (8/20 µs) Max.working voltage: V RWM = ±5 V Ultra low dynamic resistance: R dyn = 0.3Ω Low capacitance: C L = 8.5 pf typ. Very low reverse current: I R = 1 na typ. Pb-free (RoHS compliant) and halogeen free package Qualified according AEC Q101 1.2 Application Examples Cellular handsets, portable devices, notebooks and computers Digital cameras, power supplies and audio / video equipment, accessories 2 Product Description Pin 2 Pin 1 Pin 2 Figure 1 PG-SC79-2-1 a) Pin configuration Pin configuration and schematic diagram Pin 1 b) Schematic diagram PG-SC79-2-1_PinConf_and_SchematicDiag.vsd Table 1 Ordering information Type Package Configuration Marking code ESD5V0L1B-02V PG-SC79-2-1 1 channel, bi-directional1 channel, bi-directional I Final Data Sheet 7 Revision 1.0, 2010-12-16

Characteristics 3 Characteristics Table 2 Maximum Rating at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. ESD contact discharge 1) V ESD -25 25 kv Peak pulse current (t p = 8/20 µs) 2) I PP -2.5 2.5 A Operating temperature range T OP -55 125 C Storage temperature T stg -65 150 C 1) V ESD according to IEC61000-4-2 2) I PP according to IEC61000-4-5 3.1 Electrical Characteristics at T A =25 C, unless otherwise specified R dyn Differential series resistance V BR Breakdown voltage ( I BR = 1mA typ.) VRWM Reverse working voltage maximum I V CL Clamping voltage I PP I PP Peak pulse current ( t P =8/20µs typ.) R dyn VCL I BR V BR I VRWM RWM I RWM V RWM I BR Pin 2 V BR V CL V R dyn I PP V Figure 2 Definitions of electrical characteristics I Pin 1 Diode_Characteristic_Curve_Bi-directional.vsd Table 3 DC characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Reverse working voltage V RWM 5 V Breakdown voltage V BR 7 V I R = 1 ma Reverse current I R 1 50 na V R = 3 V Final Data Sheet 8 Revision 1.0, 2010-12-16

Characteristics Table 4 RF characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Diode capacitance C L 8.5 13 pf V R = 0 V, f = 1 MHz Table 5 ESD characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Clamping voltage 1) V CL 17 V I pp = 5 A, t p = 30 ns, pin 1-2 Clamping voltage 1) V CL 20 V I pp = 5 A, t p = 30 ns, pin 2-1 Clamping voltage 1) V CL 22 V I pp = 16 A, t p = 30 ns, pin 1-2 Clamping voltage 1) V CL 25 V I pp = 16 A, t p = 30 ns, pin 2-1 Dynamic resistance 1) R DYN 0.3 Ω t p =30 ns 1) According TLP tests. Please refer to Application Note AN-210 Final Data Sheet 9 Revision 1.0, 2010-12-16

Characteristics 3.2 Typical Performance characteristics at T A = 25 C, unless otherwise specified 10 9 8 C L [pf] 7 6 5 0 1 2 3 4 5 V R [V] Figure 3 Capacitance characteristics: C L = f(v R ) 10-7 10-8 I R [A] 10-9 10-10 75 100 125 150 T A [ C] Figure 4 Reverse characteristics: I R = f(v R ) Final Data Sheet 10 Revision 1.0, 2010-12-16

Characteristics 70 ESD5V0L1B-02V Pin 1 to 2 R dyn 35 60 30 I TLP [A] 50 40 30 20 R dyn =0.4Ω 25 20 15 10 Equivalent V IEC [kv] 10 5 0 Figure 5 0 0 5 10 15 20 25 30 35 40 V TLP [V] Reverse TLP characteristics 70 ESD5V0L1B-02V - Pin 2 to 1 R dyn 35 60 30 I TLP [A] 50 40 30 20 R dyn =0.2Ω 25 20 15 10 Equivalent V IEC [kv] 10 5 0 Figure 6 0 0 5 10 15 20 25 30 35 40 V TLP [V] Forward TLP characteristics Final Data Sheet 11 Revision 1.0, 2010-12-16

Characteristics 120 110 100 90 80 P PK [%] 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 T A [ C] Figure 7 Power derating curve: P PK = f(t A ) Final Data Sheet 12 Revision 1.0, 2010-12-16

Application Information 4 Application Information Connector Protected Data line with signal levels -V RWM to +V RWM (bi-directional) 1 2 I/O ESD sensitive device The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin 1 (or pin 2) should be connected directly to the data line and Pin 2 (or pin 1) should be connected directly to a ground plane on the board. Application_ESD5 V0L1B-02V.vsd Figure 8 Single Chanel, uni-directional TVS protection Final Data Sheet 13 Revision 1.0, 2010-12-16

Ordering information scheme 5 Ordering information scheme ESD 0P1 RF - XX YY Package XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP For Radio Frequency Applications Line Capacitance CL in pf: (i.e.: 0P1 = 0.1pF) ESD 5V3 U n U - XX YY Package or Application XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP S = SOT363 U = SC74 XX = Application family: LC = Low Clamp HDMI Uni- / Bi-directional or Rail to Rail protection Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines) Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF) Figure 9 Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V) Ordering Information Scheme Final Data Sheet 14 Revision 1.0, 2010-12-16

Package Information 6 Package Information 6.1 PG-SC79-2-1 0.8 ±0.1 2 0.2 M A 0.13 +0.05-0.03 A Cathode marking 1.6 ±0.1 1.2 ±0.1 1 0.3 ±0.05 0.55 ±0.04 0.2 ±0.05 Figure 10 PG-SC79-2-1: Package Overview SC79-PO V02 1.35 0.35 0.35 SC79-FP V02 Figure 11 PG-SC79-2-1: Footprint Standard 4 Reel with 2 mm Pitch 2 0.2 1.33 1.96 8 Figure 12 PG-SC79-2-1: Packing Cathode marking 0.4 0.93 Cathode marking 0.66 SC79-TP V05 Figure 13 PG-SC79-2-1: Marking (example) Final Data Sheet 15 Revision 1.0, 2010-12-16

Date Code Marking 7 Date Code Marking 1) one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 Figure 14 Date Code marking for Discrete packages with one digit (SCD8, SC79, SC75 1) ) CES-Code 1) New Marking Layout for SC75, implemented at October 2005 Final Data Sheet 16 Revision 1.0, 2010-12-16

Terminology Terminology C L EFT ESD I PP I R RoHs T A T OP t p T stg V CL V ESD V R V RWM V BR R DYN Line capacitance Electrical Fast Transient Electrostatic Discharge Peak pulse current Reverse current Restriction of Hazardous Substance Directive Ambient Temperature Operation temperature Pulse duration Storage temperature Reverse clamping voltage Electrostatic discharge voltage Reverse voltage Reverse working voltage maximum Breakdown voltage Dynamic resistance Final Data Sheet 17 Revision 1.0, 2010-12-16

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