General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. MDFN65B N-Channel MOSFET 65V, 2A,.65Ω Features V DS = 65V = 2A @ V GS = V R DS(ON).65Ω @ V GS = V Applications Power Supply PFC High Current, High Speed Switching D G TO-22F MDF Series S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =25 o C 2* A T C = o C 7.7* A Pulsed Drain Current () M 8* A Power Dissipation T C =25 o C P D 9.6 W Derate above 25 o C. W/ o C Repetitive Avalanche Energy () E AR 8. mj Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS 75 mj Junction and Storage Range T J, T stg -55~5 * Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja 62.5 Thermal Resistance, Junction-to-Case () R θjc 2.52 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDFN65BTH -55~5 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta =25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25µA, V GS = V 65 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25µA 2. -. Drain Cut-Off Current SS V DS = 65V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 6A.55.65 Ω Forward Transconductance g fs V DS = 3V, = 6A - 8.7 - S Dynamic Characteristics Total Gate Charge Q g - 3 - Gate-Source Charge Q gs V DS = 52V, = 2.A, V GS = V (3) - 9.2 - Gate-Drain Charge Q gd - 2.6 - Input Capacitance C iss - 65 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f =.MHz - 7.7 - Output Capacitance C oss - 8 - Turn-On Delay Time t d(on) - 27 - Rise Time t r V GS = V, V DS = 325V, = 2.A, - 52 - Turn-Off Delay Time t d(off) R G = 25Ω (3) - 32 - Fall Time t f - 8 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 2 - A Source-Drain Diode Forward Voltage V SD I S = 2.A, V GS = V - -. V Body Diode Reverse Recovery Time t rr I F = 2.A, di/dt = A/µs - 355 - ns Body Diode Reverse Recovery Charge Q rr - 3.6 - µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX) =5 C. 3. I SD 2.A, di/dt 2A/us, V DD BVdss, R g =25Ω, Starting T J =25 C. L=9.62mH, I AS =2.A, V DD =5V, R g =25Ω, Starting T J =25 C, 2
,Drain Current [A] 2 6 2 8 V gs =.5V =5.V =5.5V =6.V =6.5V =7.V =8.V =.V =5.V Notes. 25 μs Pulse Test 2. T C =25 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics R DS(ON) [Ω ].8.75.7.65.6.55.5 V GS =.V 2 6 8 2 6 8 2,Drain Current [A] V GS =2V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 3..2 R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2..5..5. V GS = V 2. = 6A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V 2. = 25 μa. -5 5 5 T J, Junction [ o C].8-5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with Fig. Breakdown Voltage Variation vs. * Notes ;. Vds=3V. V GS = V 2.25µs Pulse test (A) 5 25-55 R Reverse Drain Current [A] 5 25 5 6 7 8 V GS [V] Fig.5 Transfer Characteristics..6.8..2 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 6 2 Note : I = 2.A D 2 6 8 2 6 8 2 22 2 26 28 3 32 3 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 325V 52V 3V Capacitance [pf] 28 2 2 6 2 8 C iss C rss C oss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ;. V GS = V 2. f = MHz 2 Operation in This Area is Limited by R DS(on) D=.5, Drain Current [A] - DC µs µs ms ms ms Z θ JC (t), Thermal Response -.2..5.2. Duty Factor, D=t /t 2-2 Single Pulse T J =Max rated T C =25-2 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =2.52 /W -5 - -3-2 - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve Power (W) 6 5 3 2 single Pulse R thjc = 2.52 /W T C = 25 E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation, Drain Current [A] 3 2 9 8 7 6 5 3 2 25 5 75 25 5 T C, Case [ ] Fig.2 Maximum Drain Current vs. Case
Physical Dimensions 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A.5.93 b.63.9 b.5.7 C.33.63 D 5.7 6.3 E 9.6.7 e 2.5 F 2.3 2.8 G 6.8 6.9 L 2.2 3.72 L 2.79 3.67 Q 2.52 2.96 Q 3. 3.5 R 3. 3.55 5
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