MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 5PowerMOSFET,25V DataSheet Rev.2.0 Final PowerManagement&Multimarket
OptiMOS TM 5PowerMOSFET,25V 1Description Features Optimizedforhighperformancebuckconverters MonolithicintegratedSchottkylikediode VerylowonresistanceRDS(on)@VGS=4.5V 100%avalanchetested Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221 TSDSON8FL (enlarged source interconnection) Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.3 mω ID 40 A QOSS 29 nc QG(0V..4.5V) 17 nc S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTSDSON8 FL 13NE25I 1) JSTD20 and JESD22 2 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 12 Disclaimer............................................................................ 12 3 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 160 A TC=25 C Avalanche current, single pulse 3) IAS 20 A TC=25 C 40 40 40 40 32 A VGS=10V,TC=25 C VGS=10V,TC=100 C VGS=4.5V,TC=25 C VGS=4.5V,TC=100 C VGS=10V,TA=25 C,RthJA=60K/W 1) Avalanche energy, single pulse EAS 90 mj ID=20A,RGS=25Ω Gate source voltage VGS 16 16 V Power dissipation Ptot Operating and storage temperature Tj,Tstg 55 150 C 69 2.1 W TC=25 C TA=25 C,RthJA=60K/W 1) IEC climatic category; DIN IEC 681: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.8 K/W Device on PCB, 6 cm 2 cooling area 1) RthJA 60 K/W 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 25 V VGS=0V,ID=10mA Breakdown voltage temperature coefficient dv(br)dss/dtj 15 mv/k ID=10mA,referencedto25 C Gate threshold voltage VGS(th) 1.2 2.0 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.9 0.5 ma VDS=20V,VGS=0V,Tj=25 C VDS=20V,VGS=0V,Tj=125 C Gatesource leakage current IGSS 10 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) Gate resistance RG 0.7 1.2 Ω 1.3 1.1 1.7 1.3 mω VGS=4.5V,ID=20A VGS=10V,ID=20A Transconductance gfs 75 150 S VDS >2 ID RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss 2500 3400 pf VGS=0V,VDS=12V,f=1MHz Output capacitance 1) Coss 1200 1600 pf VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss 92 pf VGS=0V,VDS=12V,f=1MHz Turnon delay time td(on) 5 ns Rise time tr 4 ns Turnoff delay time td(off) 26 ns Fall time tf 3 ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω 1) Defined by design. Not subject to production test 5 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V Table6Gatechargecharacteristics 1) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 5.8 nc VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) 4.0 nc VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd 3.6 nc VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw 5.5 nc VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg 17 23 nc VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau 2.3 V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total 2) Qg 37 50 nc VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) 16 nc VDS=0.1V,VGS=0to4.5V Output charge 2) Qoss 29 39 nc VDD=12V,VGS=0V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 40 A TC=25 C Diode pulse current IS,pulse 160 A TC=25 C Diode forward voltage VSD 0.5 0.65 V VGS=0V,IF=11A,Tj=25 C Reverse recovery charge Qrr 20 nc VR=15V,IF=11A,diF/dt=400A/µs 1) See Gate charge waveforms for parameter definition 2) Defined by design. Not subject to production test 6 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 80 Diagram2:Draincurrent 50 70 60 40 50 30 Ptot[W] 40 ID[A] 30 20 20 10 10 0 0 40 80 120 160 TC[ C] Ptot=f(TC) 0 0 40 80 120 160 TC[ C] ID=f(TC);VGS 10V Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance 10 1 1 µs 10 2 10 µs 10 0 0.5 ID[A] 10 1 DC 100 µs 1 ms 10 ms ZthJC[K/W] 10 1 0.2 0.1 0.05 0.02 0.01 single pulse 10 0 10 2 10 1 10 1 10 0 10 1 10 2 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp 10 3 10 6 10 5 10 4 10 3 10 2 10 1 10 0 tp[s] ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V Diagram5:Typ.outputcharacteristics Diagram6:Typ.drainsourceonresistance ID[A] 400 300 200 5 V 4.5 V 4 V 10 V 3.5 V 2.8 V 3.2 V 3 V RDS(on)[mΩ] 2.0 1.5 1.0 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 8 V 10 V 100 0.5 0 0 1 2 3 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 0.0 0 10 20 30 40 50 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 300 Diagram8:Typ.forwardtransconductance 400 250 320 200 240 ID[A] 150 gfs[s] 160 100 50 150 C 25 C 80 0 0 1 2 3 4 5 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 0 0 40 80 120 160 ID[A] gfs=f(id);tj=25 C 8 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V Diagram9:Drainsourceonstateresistance 3.0 Diagram10:Typ.gatethresholdvoltage 2.5 2.5 2.0 2.0 10 ma RDS(on)[mΩ] 1.5 1.0 typ VGS(th)[V] 1.5 1.0 0.5 0.5 0.0 60 20 20 60 100 140 180 Tj[ C] RDS(on)=f(Tj);ID=20A;VGS=10V 0.0 60 20 20 60 100 140 180 Tj[ C] VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 10 4 10 3 Ciss Coss 10 3 55 C 25 C 125 C 150 C 10 2 C[pF] IF[A] 10 1 10 2 Crss 10 0 10 1 0 5 10 15 20 25 VDS[V] C=f(VDS);VGS=0V;f=1MHz 10 1 0.0 0.4 0.8 1.2 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,20150817
OptiMOS TM 5PowerMOSFET,25V Diagram13:Avalanchecharacteristics 10 2 Diagram14:Typ.gatecharge 12 10 5 V 12 V 8 20 V 25 C IAV[A] 10 1 125 C 100 C VGS[V] 6 4 2 10 0 10 0 10 1 10 2 10 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 0 0 10 20 30 40 Qgate[nC] VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drainsourceleakagecurrent 10 3 Gate charge waveforms 125 C 100 C 10 4 IDSS[A] 75 C 10 5 25 C 10 6 0 5 10 15 20 Vsd[V] IDSS=f(VDS);VGS=0V;parameter:Tj 10 Rev.2.0,20150817
OptiMOSTM5 PowerMOSFET, 25 V 6 Package Outlines Figure 1 Outline PGTSDSON8 FL, dimensions in mm/inches 11 Rev. 2.0, 20150817
OptiMOSTM5 PowerMOSFET, 25 V Revision History Revision: 20150817, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20150817 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.0, 20150817