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FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 3mΩ Features Max r DS(on) = 3mΩ at V GS = 0V, I D = 7A Max r DS(on) = 30mΩ at V GS = 4.5V, I D = 6A V F < 0.45V @ A V F < 0.8V @ 00mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Miller Charge SO-8 General Description The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Application MOSFET Maximum Ratings T A = 5 C unless otherwise noted Thermal Characteristics C C D Pin D A A S G DC/DC Conversion Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage ±0 V Drain Current -Continuous (Note a) 7 I D -Pulsed 30 A Power Dissipation for Dual Operation P D Power Dissipation for Single Operation (Note a).6 W E AS Drain-Source Avalanche Energy (Note 3) mj V RRM Schottky Repetitive Peak Reverse Voltage 30 V I O Schottky Average Forward Current (Note a) A T J, T STG Operating and Storage Junction Temperature Range -55 to +50 C A A S G 3 4 8 7 6 5 C C D D August 04 R θja Thermal Resistance, Junction to Ambient (Note a) 78 R θjc Thermal Resistance, Junction to Case (Note ) 40 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDFS6N548 FDFS6N548 SO-8 330mm mm 500 units 007 Fairchild Semiconductor Corporation FDFS6N548 Rev.B
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 50µA, V GS = 0V 30 V BV DSS T J Breakdown Voltage Temperature Coefficient I D = 50µA, referenced to 5 C mv/ C V DS = 4V, I DSS Zero Gate Voltage Drain Current µa V GS = 0V T J = 5 C 50 I GSS Gate to Source Leakage Current V GS = ±0V, V DS = 0V ±00 na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 50µA..8.5 V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient I D = 50µA, referenced to 5 C -5 mv/ C V GS = 0V, I D = 7A 9 3 r DS(on) Drain to Source On-Resistance V GS = 4.5V, I D = 6A 3 30 mω V GS = 0V, I D = 7A, T J = 5 C 6 3 g FS Forward Transconductance V DS = 5V, I D = 7A 0 S Dynamic Characteristics C iss Input Capacitance 55 700 pf V DS = 5V, V GS = 0V, C oss Output Capacitance 00 33 pf f = MHz C rss Reverse Transfer Capacitance 65 00 pf R g Gate Resistance f = MHz 0.8 Ω Switching Characteristics t d(on) Turn-On Delay Time 6 ns V DD = 5V, I D = 7A, t r Rise Time 0 ns V GS = 0V, R GEN = 6Ω t d(off) Turn-Off Delay Time 4 5 ns t f Fall Time 0 ns Q g(tot) Total Gate Charge at 0V V DS = 5V, I D = 7A 9 3 nc Q gs Gate to Source Gate Charge V GS = 0V.5 nc Q gd Gate to Drain Miller Charge nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = 0V, I S = 7A (Note) 0.90.5 V t rr Reverse Recovery Time 3 35 ns I F = 7A, di/dt = 00A/µs Q rr Reverse Recovery Charge 4 nc Schottky Diode Characteristics V R Reverse Breakdown Voltage I R = -ma -30 V I R Reverse Leakage V R = -0V V F Forward Voltage I F = 00mA I F = A T J = 5 C -39-50 µa T J = 5 C -8 ma T J = 5 C 5 80 T J = 5 C 40 T J = 5 C 364 450 T J = 5 C 90 mv FDFS6N548 Rev.B
Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a) 78 C/W when mounted on a 0.5in pad of oz copper : Pulse Test: Pulse Width < 300µs, Duty cycle <.0%. 3: Starting T J = 5 C, L = mh, I AS = 5.0A, V DD = 7V, V GS = 0V. b) 5 C/W when mounted on a 0.0 in pad of oz copper c) 35 C/W when mounted on a minimun pad FDFS6N548 Rev.B 3
Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE I D, DRAIN CURRENT (A) 30 5 0 5 0 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V).6.4..0 0.8 Figure. V GS = 0V V GS = 4.5V V GS = 4V V GS = 3.5V V GS = 3V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.0 PULSE DURATION = 80µs V GS = 0V DUTY CYCLE = 0.5%MAX 0.5 0 5 0 5 0 5 30 On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage 0.6-75 -50-5 0 5 50 75 00 5 50 T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On-Resistance vs Junction Temperature 30 5 0 5 0 5 I D = 7A V GS = 0V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDD = 5V T J = 50 o C T J = -55 o C 0 0 3 4 V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) IS, REVERSE DRAIN CURRENT (A) 3.0.5.0.5 60 50 40 30 0 V GS = 3V Figure 4. I D = 7A V GS = 3.5V V GS = 4V I D, DRAIN CURRENT(A) V GS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX T J = 50 o C 0 4 6 8 0 V GS, GATE TO SOURCE VOLTAGE (V) 60 0 0. 0.0 V GS = 0V On-Resistance vs Gate to Source Voltage T J = 50 o C T J = -55 o C 0.00 0.0 0. 0.4 0.6 0.8.0. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFS6N548 Rev.B 4
Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 0 8 6 4 I D = 7A 0 0 4 6 8 0 Q g, GATE CHARGE(nC) Figure 7. 8 7 6 5 4 3 V DD = 0V V DD = 5V V DD = 0V 40 0. 0 V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 0.0 0. 0 50 0 0. t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED T A = 5 o C 0.0 0. 0 V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area 00us ms 0ms 0 00ms s 0s DC 80 CAPACITANCE (pf) P (PK), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 000 00 8 6 4 f = MHz V GS = 0V R θja = 78 o C/W V GS = 4.5V C iss C oss C rss V GS = 0V 0 5 50 75 00 5 50 T A, AMBIENT TEMPERATURE ( o C) Figure 0. Maximum Continuous Drain Current vs Ambient Temperature 300 00 0 V GS = 0V SINGLE PULSE I = I 5 0.5 0-4 0-3 0-0 - 0 0 0 0 0 3 t, PULSE WIDTH (s) FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 50 T A ---------------------- 5 Figure. Single Pulse Maximum Power Dissipation T A = 5 o C 30 FDFS6N548 Rev.B 5
Typical Characteristics T J = 5 C unless otherwise noted I F, FORWARD LEAKAGE CURRENT (A) 30 0 0. 0.0 0.00 0.0 0.4 0.8..6.0 NORMALIZED THERMAL IMPEDANCE, Z θja V F, FORWARD VOLTAGE (V) Figure 3. Schottky Diode Forward Characteristics 0. DUTY CYCLE-DESCENDING ORDER D = 0.5 0. 0. 0.05 0.0 0.0 I R, REVERSE LEAKAGE CURRENT (ma) 0 0. 0.0 t, RECTANGULAR PULSE DURATION (s) Figure 5. Transient Thermal Response Curve 0.00 0 5 0 5 0 V R, REVERSE VOLTAGE (V) Figure 4. Schottky Diode Reverse Characteristics t t 0.0 NOTES: SINGLE PULSE DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A 3E-3 0-4 0-3 0-0 - 0 0 0 0 0 3 P DM FDFS6N548 Rev.B 6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 800 USA Phone: 303 675 75 or 800 344 3860 Toll Free USA/Canada Fax: 303 675 76 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 800 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 33 790 90 Japan Customer Focus Center Phone: 8 3 587 050 www.onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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