2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable for use as a load switch or in PWM applications. Product Summary V DS I D (at V GS =4.5V) R DS(ON) (at V GS =4.5V) R DS(ON) (at V GS =2.5V) R DS(ON) (at V GS =.8V) 2V 3.8A < 7mΩ < 9mΩ < 5mΩ DFN 2x2 Package S G D2 Pin D D2 Pin Top D G2 Bottom S2 G S G2 S2 Absolute Maximum Ratings unless otherwise noted Parameter Symbol Maximum DrainSource Voltage 2 GateSource Voltage Continuous Drain Current Pulsed Drain Current C Power Dissipation A T A =7 C T A =7 C Junction and Storage Temperature Range V DS V GS I DM P D T J, T STG ±8 I D 3.8 3 2.5.95 55 to 5 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 35 45 Maximum JunctiontoAmbient A R θja SteadyState 65 85 Maximum JunctiontoAmbient B t s 2 55 Maximum JunctiontoAmbient B R θja SteadyState 75 235 Rev : August 22 www.aosmd.com Page of 5
Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25µA, V GS =V 2 V V DS =2V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±8V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =25µA.4.6 V I D(ON) On state drain current V GS =4.5V, V DS =5V 2 A R DS(ON) Static DrainSource OnResistance V GS =4.5V, I D =3.8A V GS =2.5V, I D =3A V GS =.8V, I D =2A 58 7 T J = 78 94 7 9 mω 85 5 mω g FS Forward Transconductance V DS =5V, I D =3.8A 5 S V SD Diode Forward Voltage I S =A,V GS =V.66 V I S Maximum BodyDiode Continuous Current 2 A DYNAMIC PARAMETERS C iss Input Capacitance 56 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 8 pf C rss Reverse Transfer Capacitance 7 pf R g Gate resistance V GS =V, V DS =V, f=mhz 5 3 Ω SWITCHING PARAMETERS Q g Total Gate Charge 8.5 2 nc Q gs Gate Source Charge V GS =4.5V, V DS =V, I D =3.8A.2 nc Q gd Gate Drain Charge 2. nc t D(on) TurnOn DelayTime 7.2 ns t r TurnOn Rise Time V GS =4.5V, V DS =V, R L =2.6Ω, 36 ns t D(off) TurnOff DelayTime R GEN =3Ω 53 ns t f TurnOff Fall Time 56 ns t rr Body Diode Reverse Recovery Time I F =3.8A, di/dt=a/µs 37 ns Q rr Body Diode Reverse Recovery Charge I F =3.8A, di/dt=a/µs 27 nc A: The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of 5 C. B. The value of R θja is measured with the device mounted on a minimum pad board. Copper, in a still air environment with. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of 5 C. C. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The SOA curve provides a single pulse rating. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev : August 22 www.aosmd.com Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 4.5V 3.V 2 V DS =5V 5 2.5V 6 2 I D (A) 2.V I D (A) 8 5 4 V GS =.5V 2 3 4 5 V DS (Volts) Fig : OnRegion Characteristics.5.5 2 2.5 3 V GS (Volts) Figure 2: Transfer Characteristics 4.6 R DS(ON) (mω) 2 8 6 V GS =.8V V GS =2.5V Normalized OnResistance.4.2 V GS =2.5V I D =3A V GS =4.5V I D =3.8A V GS =.8V I D =2A 4 V GS =4.5V 2 4 6 8 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 25 5 75 25 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 8 I D =3.8A E2 4 E R DS(ON) (mω) 6 I S (A) E E E2 E3 2 2 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage E4..2.4.6.8..2 V SD (Volts) Figure 6: BodyDiode Characteristics Rev : August 22 www.aosmd.com Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V GS (Volts) 5 4 3 2 V DS =V I D =3.8A Capacitance (pf) 4 2 8 6 4 2 C oss C iss 2 4 6 8 Q g (nc) Figure 7: GateCharge Characteristics C rss 5 5 2 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)... R DS(ON) limited µs µs ms ms Power (W) T J(Max) =5 C. T J(Max) =5 C s DC... V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) E6.. Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =85 Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) P D T on T Rev : August 22 www.aosmd.com Page 4 of 5
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) t f Rg 9% % Diode Recovery Test Circuit & Waveforms Q rr = Idt Ig Isd L Isd I F di/dt I RM t rr Rev : August 22 www.aosmd.com Page 5 of 5