General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable device for DC/DC Converter and general purpose applications. MDV1545 Single N-channel Trench MOSFET 3V Features = 3V = 32A @ = 1V < 1.1 mω @ = 1V < 14. mω @ = 4.5V 1% UIL Tested 1% Rg Tested D D D D D D D D D MDV1545 Single N-Channel Trench MOSFET 3V S S S G G S S S G PDFN33 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V T C=25 o C (Silicon Limited) 39 T C=25 o C (Package Limited) 32 Continuous Drain Current (1) Power Dissipation T C=25 o C 28 T C=7 o C 27 T A=25 o C 14 T A=7 o C 11 Pulsed Drain Current M 12 T C=25 o C 23 T C=7 o C 14 T A=25 o C 3.4 T A=7 o C 2.2 Single Pulse Avalanche Energy (2) E AS 45 mj Junction and Storage Temperature Range T J, T stg -55~15 Thermal Characteristics Characteristics Symbol Rating Unit P D A W o C Thermal Resistance, Junction-to-Ambient (1) R θja 36 Thermal Resistance, Junction-to-Case R θjc 5. o C/W Oct. 215. Ver. 1.3 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDV1545URH -55~15 o C PDFN33 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ. Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V 3 - - Gate Threshold Voltage (th) =, = 25μA 1.3 1.9 2.7 V Drain Cut-Off Current SS = 3V, = V - - 1 ua Gate Leakage Current I GSS = ±2V, = V - - ±1 na = 1V, = 11A - 8.2 1.1 Drain-Source ON Resistance T J=125 o C 11.9 14.6 mω = 4.5V, = 9A - 11.5 14. Forward Transconductance g fs = 5V, = 11A - 31 - S Dynamic Characteristics Total Gate Charge Q g(1v) 9.7 14. 18.2 Total Gate Charge Q g(4.5v) V DD = 15V, = 11A, 4. 5.7 7.4 Gate-Source Charge Q gs = 1V - 2.7 - nc Gate-Drain Charge Q gd - 1.3 - Input Capacitance C iss 56 8 139 Reverse Transfer Capacitance C rss = 15V, = V, f = 1.MHz 4 58 75 pf Output Capacitance C oss 273 39 56 Turn-On Delay Time t d(on) - 5.7 - Rise Time t r = 1V, V DD = 15.V, - 11.3 - Turn-Off Delay Time t d(off) = 11A, R G =3Ω, - 2. - ns Fall Time t f - 5.7 - Gate Resistance R g f=1 MHz 1. 1.6 3. Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 1A, = V -.75 1.1 V Body Diode Reverse Recovery Time t rr I F = 11A, dl/dt = 1A/μs - 28. - ns Body Diode Reverse Recovery Charge Q rr - 23. - nc MDV1545 Single N-Channel Trench MOSFET 3V Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E AS is tested at starting T j = 25, L =.1mH, I AS = 15 A, V DD = 27V, = 1V Oct. 215. Ver. 1.3 2
R, Reverse Drain Current [A], (Normalized) Drain-Source On-Resistance [mohm], Drain-Source On-Resistance Drain-Source On-Resistance [mohm] 5 4 3 2 1 1.8 1.6 1.4 = 1V 8.V 6.V 4.5V 4.V..5 1. 1.5 2. 3.V, Drain-Source Voltage [V] Fig.1 On-Region Characteristics 1. = 1 V 2. = 11 A 2 18 16 14 12 1 8 6 4 2 = 1V = 4.5V 2 4 1 9 8 7 6 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 11.A MDV1545 Single N-Channel Trench MOSFET 3V 1.2 1..8.6-5 -25 25 5 75 1 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 5 4 3 2 1 2 3 4 5 6 7 8 9 1, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage 2 = 5V = V 15 1 1 1 5 1 2 3 4 5, Gate-Source Voltage [V].1..2.4.6.8 1. 1.2 V SD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Oct. 215. Ver. 1.3 3
Z thjc (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] 1 1 3 1 2 8 6 4 2 * Note : = 11A = 15V 5 1 15 2 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 15 1 5 5 4 C iss C oss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 5 1 15 2 25 3, Drain-Source Voltage [V] * Notes ; 1. = V 2. f = 1 MHz Fig.8 Capacitance Characteristics MDV1545 Single N-Channel Trench MOSFET 3V 1 1 1 1-1 Operation in This Area is Limited by R DS(on) Single Pulse T J =Max Rated T C =25 o C 1-1 1 1 1 1 2 DC, Drain-Source Voltage [V] 1 ms 1 ms 1 s 1 s 3 2 1 Limited by Package 25 5 75 1 125 15 T C, Case Temperature [ o C] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature 1 1 D=.5 1 1-1.2.1.5.2.1 single pulse 1-2 Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z thjc * R thjc (t) + T C 1-3 1-4 1-3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Oct. 215. Ver. 1.3 4
Package Dimension PowerDFN33 (3.3x3.3mm) Dimensions are in millimeters, unless otherwise specified MDV1545 Single N-Channel Trench MOSFET 3V (Unit: mm) Oct. 215. Ver. 1.3 5
MDV1545 Single N-Channel Trench MOSFET 3V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Oct. 215. Ver. 1.3 6