RHRD66S9A_F85 Data Sheet May 23 6A, 6V Hyperfast Diodes The RHRD66S9A_F85 is hyperfast diodes with soft recovery characteristics ( < 3ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA4957. Features Hyperfast with Soft Recovery.................. <3ns Operating Temperature...................... 75 o C Reverse Voltage Up To........................ 6V Avalanche Energy Rated Planar Construction Qualified to AEC Q RoHS Compliant Applications Switching Power Supplies Power Switching Circuits General Purpose Ordering Information PART NUMBER PACKAGE BRAND RHRD66S9A_F85 TO-252 RHR66 Symbol Packaging K A JEDEC STYLE TO-252 CATHODE ANODE CATHODE (FLANGE) Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified RHRD66S9A_F85 Peak Repetitive Reverse Voltage....................................................... V RRM 6 V Working Peak Reverse Voltage........................................................ V RWM 6 V DC Blocking Voltage...................................................................V R 6 V Average Rectified Forward Current..................................................... I F(AV) (T C = 52 o C) Repetitive Peak Surge Current......................................................... I FRM (Square Wave, 2kHz) Nonrepetitive Peak Surge Current....................................................... I FSM (Halfwave, Phase, 6Hz) UNITS 6 A 2 A 6 A Maximum Power Dissipation.............................................................P D 5 W Avalanche Energy (See Figures and )............................................... E AVL mj Operating and Storage Temperature.................................................. T STG, T J -55 to 75 o C Maximum Lead Temperature for Soldering (Leads at.63 in. (.6mm) from case for s)............................................. T L 3 o C Package Body for s, see Tech Brief 334...............................................T PKG 26 o C 2 Fairchild Semiconductor Corporation RHRD66S9A_F85 Rev.C2
RHRD66S9A_F85 Electrical Specifications T C = 25 o C, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS V F I F = 6A - - 2. V I F = 6A, T C = 5 o C - -.7 V I R V R = 6V - - µa V R = 6V, T C = 5 o C - - 5 µa I F = A, di F /dt = 2A/µs - - 3 ns I F = 6A, di F /dt = 2A/µs - - 35 ns I F = 6A, di F /dt = 2A/µs - 6 - ns I F = 6A, di F /dt = 2A/µs - 8.5 - ns Q RR I F = 6A, di F /dt = 2A/µs - 45 - nc C J V R = V, I F = A - 2 - pf R θjc - - 3 o C/W DEFINITIONS V F = Instantaneous forward voltage (pw = 3µs, D = 2%). I R = Instantaneous reverse current. = Reverse recovery time (See Figure 9), summation of +. = Time to reach peak reverse current (See Figure 9). = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 9). Q RR = Reverse recovery charge. C J = Junction capacitance. R θjc = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 3 75 o C 75 o C o C 25 o C I R, REVERSE CURRENT (µa). o C 25 o C.5.5.5 2 2.5 V F, FORWARD VOLTAGE (V) 3. 2 3 4 5 6 V R, REVERSE VOLTAGE (V) FIGURE. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE 2 Fairchild Semiconductor Corporation RHRD66S9A_F85 Rev. C2
RHRD66 Typical Performance Curves (Continued) RHRD66S9A_F85 3 T C = 25 o C, di F /dt = 2A/µs 5 T C = o C, di F /dt = 2A/µs 25 2 5 5 4 3 2.5 6.5 6 FIGURE 3., AND CURVES vs FORWARD CURRENT FIGURE 4., AND CURVES vs FORWARD CURRENT 75 6 45 3 5.5 T C = 75 o C, di F /dt = 2A/µs 6 I F(AV), AVERAGE FORWARD CURRENT (A) 6 5 4 3 2 4 45 SQ. WAVE DC 5 55 6 65 7 75 T C, CASE TEMPERATURE ( o C) FIGURE 5., AND CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 5 C J, JUNCTION CAPACITANCE (pf) 4 3 2 5 5 2 V R, REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 2 Fairchild Semiconductor Corporation RHRD66S9A_F85 Rev. C2
RHRD66S9A_F85 Test Circuits and Waveforms V GE AMPLITUDE AND R G CONTROL di F /dt t AND t 2 CONTROL I F L V GE t R G DUT IGBT CURRENT SENSE + - I F di F dt t 2.25 I RM I RM FIGURE 8. TEST CIRCUIT FIGURE 9. WAVEFORMS AND DEFINITIONS I MAX = A L = 2mH R <.Ω E AVL = /2LI 2 [V R(AVL) /(V R(AVL) - )] Q = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q CURRENT SENSE + I V I L I L DUT - t t t 2 t FIGURE. AVALANCHE ENERGY TEST CIRCUIT FIGURE. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 2 Fairchild Semiconductor Corporation RHRD66S9A_F85 Rev.C2
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