Silicon NPN Triple Diffused Application High, high speed and high power switching Outline TO-220AB 1 2 1. Base 2. Collector (Flange). Emitter Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base V CBO 900 V Collector to emitter V CEO 800 V Emitter to base V EBO 7 V Collector current I C A Collector peak current I C(peak) 6 A Base current I B 1.5 A Collector power dissipation P C * 1 40 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at.
Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain Emitter to base breakdown V CEO(sus) 800 V I C = 0.2 A, R BE =, L = 0 mh V CEX(sus) 800 V I C = A, I B1 = 0.9 A, I B2 = 0.6 A, V BE = 5.0 V, L = 180 µh, Clamped V (BR)EBO 7 V I E = ma, I C = 0 Collector cutoff current I CBO 0 µa V CB = 750 V, I E = 0 I CEO 0 µa V CE = 650 V, R BE = DC current transfer ratio h FE1 15 V CE = 5 V, I C = 0. A* 1 Collector to emitter saturation Base to emitter saturation h FE2 7 V CE = 5 V, I C = 1.5 A* 1 V CE(sat) V I C = 0.75 A, I B = 5 A* 1 V BE(sat) 1.5 V Turn on time t on µs I C = 1.5 A, I B1 = 0. A, Storage time t stg.0 µs I B2 = 0.75 A, V CC 250 V Fall time t f µs Note: 1. Pulse test Collector power dissipation P C (W) 60 40 20 Maximum Collector Dissipation Curve Area of Safe Operation i C(peak) I Cmax (Continuous) 0. 0.0 0.00 DC Operation Ta = 25 C, 1 Shot 1 ms PW = ms 250 µs 50 µs 25 µs 0 50 0 150 Case temperature T C ( C) 0.001 1 0 0 00 1,000 Collector to emitter V CE (V) 2
Collector current derating rate (%) Collector Current Derating Rate 0 80 IS/B Limit Area 60 40 20 0 50 0 150 Case temperature T C ( C) Thermal resistance θ j-c ( C/W) 0. Transient Thermal Resistance ms s µs ms 0.0 (s) (ms) Time t Reverse Bias Area of Safe Operation 8 6 600 V, 6 A 4 2 I B2 = 0.6 A 800 V, A 850 V, A 0 200 400 600 800 1,000 Collector to emitter V CE (V) Collector to emitter V (BR)CER (V) 1,000 900 800 Collector to Emitter Voltage vs. Base to Emitter Resistance I C = 1 ma 700 0 1 k k 0 k 1 M Base to emitter resistance R BE (Ω)
2.5 2.0 1.5 0.5 0.7 Typical Output Characteristics 0.6 0.5 0.4 0. 0.2 0.05 A I B = 0 0 1 2 4 5 Collector to emitter V CE (V) 2.5 2.0 1.5 0.5 Typical Transfer Characteristics V CE = 5 V 0 0.4 0.8 1.2 1.6 2.0 Base to emitter V BE (V) DC current transfer ratio h FE 0 0 DC Current Transfer Ratio vs. Collector Current 75 C 25 C T C = 25 C V CE = 5 V 1 0.0 0. Collector to emitter saturation V CE(sat) (V) 0. Collector to Emitter Saturation Voltage vs. Base Current I C = 0.75 A 1.5 A A 0.0 0.0 0. Base current I B (A) 4
Collector to emitter saturation V CE(sat) (V) Base to emitter saturation V BE(sat) (V) 0. Saturation Voltage vs. Collector Current V BE(sat) V CE(sat) 0.0 I C = 5 I B 0.005 0.0 0. 5 Switching time t (µs) 0. Switching Time vs. Collector Current t stg 0.0 I C = 5 I B1 = 2 I B2 V CC = 250 V 0.005 0.0 0. 5 t f t on Switching Time vs. Case Temperature 5 t stg Switching time t (µs) 0. 0.05 0 t f t on I C = 1.5 A I B1 = 0. A,I B2 = 0.75 A V CC = 250 V 25 50 75 0 125 Case temperature T C ( C) 5
Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Unit: mm 11.5 MAX 2.79 ± 0.2.16 ± 0.2 9.5 8.0 φ.6 + -0.08 4.44 ± 0.2 1.26 ± 5 18.5 ± 0.5 7.8 ± 0.5 1.27 6.4 +0.2 1.5 MAX 0.76 ± 14.0 ± 0.5 15.0 ± 0. 2.7 MAX 2.54 ± 0.5 2.54 ± 0.5 0.5 ±
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