TX-801 Temperature Compensated Crystal Oscillator

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TX-801 Temperature Compensated Crystal Oscillator TX-801 Features Applications The TX-801 TCXO provides fully compliant Stratum 3 levels of stability in a 5x3.2mm package. It is ideal for timing over IP applications such as 1588 PTP and Synchronous Ethernet. Features Excellent Temperature Stability, Stratum 3 Compliant CMOS and Clipped Sinewave Output NEW! Extended Temperature Range -40 C to +105 C Low Phase Noise Phase Noise Filter Option Small Size, Low Profile Improved Temperature Cycling through 10 Pin Mounting 100% RoHS Compliant Frequency Range: 6.4-52 1 MHz Standard Frequencies: 6.4, 9.6, 10, 12.8, 13, 16.384, 19.2, 20, 20.48, 22.1184, 24.576, 25, 26, 30.72, 32, 38.88MHz Description Applications 1588 Applications Wireline Stratum 3 applications Test & Measurement Wireless Communications Small Cells Performance Specifications Frequency Stabilities 1 Parameter Min Typ Max Units Condition vs. operating temperature range (referenced to (dfmax+dfmin)/2) -100 +100 ppb -10 to +70 C -280 +280 ppb -40 to +85 C -2-500 +2 +500 Page 1 ppm ppb -40 to +105 C -20 to +85 C Holdover -40 +40 ppb In a 24h period at constant temperature Initial tolerance -1.0 +1.0 ppm at time of shipment, @ Vc=Vs/2 vs. supply voltage change vs. load change vs. aging / 1st year -1.0 +1.0 ppm vs. aging / 20 Years -3.0 +3.0 ppm -0.2 +0.2 ppm V S ±5% static @ HCMOS -0.1 +0.1 ppm V S ±5% static @ Clipped Sinewave -0.2 +0.2 ppm Load ±10% static @ HCMOS -0.1 +0.1 ppm Load ±10% static @ Clipped Sinewave Overall tolerance -4.6 +4.6 ppm Note:*Stratum 3 per GR-1244-CORE: <±4.6ppm for all causes and 20 years aging, holdover: <±0.37ppm over 24 hours NEW!

Performance Specifications Supply Voltage (Vs) Parameter Min Typical Max Units Condition Supply voltage (standard) 3.135 3.3 3.465 VDC Current consumption 3.3 5 ma LVCMOS @ 26MHz, steady state @ +25 C Current consumption 1.8 2.7 ma Clipped Sine @ 26MHz, steady state @ +25 C RF Output (Clipped Sinewave) Load R 9 10 11 kω Load C 9 10 11 pf Output Power 1.0 1.2 V pp @ 10kΩ 10pF RF Output (HCMOS) Load 13.5 15 16.5 pf Signal Level (Vol) 0.3 VDC with Vs=3.3V and 15pF Load Signal Level (Voh) 3.0 with Vs=3.3V and 15pF Load Rise and Fall time 6.5 ns Duty Cycle 40 50 60 % @ (Voh-Vol)/2 Tuning Range Frequency Tuning (EFC) Fixed TCXO; No adjustment Tuning Range ±5.0 ±10.0 ppm Linearity 10% Tuning Slope Control Voltage Range Positive Options 0.5 1.5 2.5 VDC @ V s = 2.8V 0.3 1.65 3.0 VDC @ V s = 3.3V 0.5 2.5 4.5 VDC @ V s = 5V Freq. Control input impedance 100 kω Additional Parameters Weight 1.0 g Processing & Packing Reflow Profile Handling & Processing Note IPC / JEDEC J-STD-020 (latest version) Absolute Maximum Ratings Supply voltage (Vs) 6.0 V Control voltage 0 Vs V Operable Temperature Range -40 +105 C Storage Temperature Range -55 +105 C Phase Noise Phase Noise Additional Information -103-129 -148-155 -157-94 -122-144 -155-157 Max. Temperature depending on Specification 10 Hz 100 Hz 1 khz 10 khz 100 khz 10 Hz 100 Hz 1 khz 10 khz 100 khz Bypass capacitor is recommended @ 10MHz @ 20MHz Page 2

Typical Performance Data TX-801 @ 10MHz TX-801 @ 20MHz -80-80 -100-100 Phase Noise [] -120 Phase Noise [] -120-140 -140-160 -160-180 -180 10E+0 100E+0 1E+3 10E+3 100E+3 1E+6 10E+6 10E+0 100E+0 1E+3 10E+3 100E+3 1E+6 10E+6 Offset Frequency [Hz] Offset Frequency [Hz] MTIE per GR1244 Wander TDEV per GR1244 Wander TX-801@ 20MHz; Temperature Ramp; 100mHz High Pass Filter TX-801@ 20MHz; Temperature Ramp; 100mHz High Pass Filter 1E-07 1E-06 1E-07 MTIE [s] TDEV [s] 1E-11 Temperature Ramp ADEV 0.5K/min Slope TX-801@ 20MHz; @40 C 100 80 60 temperature [ C] 40 20 0 0 6 12 18 24 Allen deviation -20-40 time [h] 1E-11 Page 3

Outline Drawing / Enclosure all dimensions in mm Enable pin function: TX-801 Pin 8 state: Pin 6 output: High Data Open Data Low High Tristate Package Codes: 801 Type Height G320 1.7mm Marking: TX-801 Specification Frequency VI AYYWW Pin Connections 1 Voltage Control (V C ) or No Connect (option) 2 Do not connect 3 Do not connect 4 Ground (GND) 5 Ground (GND) 6 RF Output 7 Phase Noise Filter Capacitor (optional) 8 Enable Control 9 Supply Voltage Input (V S ) 10 Ground (GND) Rapid Temperature Changes Vibration Shock Solderability Environmental Conditions MIL-883-1010 Cond B 1000 cycles -55/125C MIL-STD-883 Meth 2007 Cond A 20G 20-2000Hz 4x in each 3axis 4 min MIL-STD-202 Meth 213B Cond. F; 1500g 0,5ms 6 shocks in each direction J_STD_002C Cond A, Through hole device/ Cond. B, SMD 255C (diving time 50,5sec.) Dip+Look with 8h damp pre-treatment: solder wetting >95% Solvent Resistance MIL-STD-883 Meth 2015 Solv. 1,3,4 ESD Moisture Sensitivity RoHS Compliance JESD22-A114F Class 1B; 10* 1000V Level 1 JESD22-A113-B 100% ROHS compliant Page 4

Standard Shipping Method Enclosure Type Tape Width W (mm) Quantity per meter Quantity per reel Dimension P G320 12 150 750 8 Ordering Information TX - 801 0 - E A J - 107 0-10M0000000 Product Family TX: TCXO Frequency Package SMD G320 Height 0: 1.7mm Supply Voltage D: 5V E: 3.3V G: 2.8V RF Output Code A: HCMOS F: Clipped Sinewave Temperature Range P: 0 C to +50 C W: -10 C to +70 C J: -20 C to +70 C H: -30 C to +85 C E: -40 C to +85 C F: -40 C to +105 C Stability Code 107: ±100ppb 207: ±200ppb 287: ±280ppb 507: ±500ppb 807: ±800ppb 106: ±1.0ppm 156: ±1.5ppm 206: ±2.0ppm Notes: 1. Contact factory for improved stabilities or additional product options. Not all options and codes are available at all frequencies. 2. Unless otherwise stated all values are valid after warm-up time and refer to typical conditions for supply voltage, frequency control voltage, load, temperature (25 C). 3. Phase noise with optional Phase noise Filter Capacitor. Phase noise degrades with increasing output frequency. 4. Subject to technical modification. 5. Contact factory for availability. Frequency Control 0: No Tuning 1: EFC: ±5.0 to 10ppm USA: Microsemi 267 Lowell Road, Suite 102 Hudson, NH 03051 Tel: 1.888.328.7661 Fax: 1.888.329.8328 For Additional Information, Please Contact Europe: Vectron International GmbH Landstrasse, D-74924 Neckarbischofsheim, Germany Tel: +49 (0) 7268.801.100 Fax: +49 (0) 7268.801.282 Asia: Microsemi 68 Yin Cheng Road(C), 22nd Floor One LuJiaZui Pudong, Shanghai 200120, China Tel: +86 21 6194 6886 Fax: +86 21 6194 6699 Disclaimer Microsemi reserves the right to make changes to the product(s) and or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information. Page 5 Rev: 01/2018