1,55nm MQWDFB DWDM Direct Modulation Laser FLD5F6CXJ FEATURES Direct Modulated MQW DFB Laser Builtin TEC, Thermistor and Monitor PD 14Pin Butterfly Type Module mw Output Power Low Residual Chirp Optimized for 2.5 Gb/s Modulation Rates Selected wavelengths according to ITUT grid available APPLICATIONS This MQW laser is intended for the application of 2.5 Gb/s long haul Dense Wavelength Division Multiplexing (DWDM). Transmission spans of km are possible without amplification. DESCRIPTION The Multiple Quantum Well (MQW) Laser is a high power laser capable of 2.5 Gb/s transmission. It is packaged in a butterfly type module. The module employs a high efficiency optical coupling system, coupling the laser output through a builtin optical isolator into a single mode fiber pigtail. The modules also include a monitor photodiode, a thermoelectric cooler (TEC) and thermistor. This device is designed for use in DWDM direct modulation transmission systems. Selected wavelengths specified to the ITUT grid are available. ABSOLUTE MAXIMUM RATINGS (Tc=25 C) Parameter Symbol Condition Ratings Unit Storage Temperature Tstg 4 to +7 C Operating Case Temperature Top 2 to +65 C Optical Output Power Pf CW 12. Forward Current Photodiode Reverse Voltage Photodiode Forward Current TEC Voltage IF Reverse Voltage VR 2 V TEC Current Lead Soldering Time Environmental Operating Humidity Environmental Storage Humidity VDR IDF Vc Ic Tsold CW <26 C 15 2 V 2.5 1.4 mw Xop Top<3 C 95 % Xst Tst<3 C 95 ma ma V A sec % Edition 1. December 1999 1
FLD5F6CXJ 1,55nm MQWDFB DWDM Direct Modualtion Laser OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 C, BOL, unless otherwise specified) Parameter Symbol Conditions Limits Min. Typ. Max. Unit Laser Set Temperature Tset 2 35 C Threshold Current Ith CW 3 4 ma Forward Voltage VFDC CW, IF=3 ma, pin 1213 Series Resistance Optical Output Power Slope Efficiency Threshold Power Tracking Error (Note 1) Rs Pf η Pth TE CW, pin 1213 CW CW, Pf=mW IF=Ith, CW Pf=mW, Tc=2 to 65 C Kinks (up to 2.4 mw) Kns None Pulsation None BER Performance ER Note (3) No Floor 22..14.5 28 15 +.5 Ω mw mw/ma Monitor Current Im CW, Pf=mW, VDR=5V. 1. ma Photodiode Dark Current ID VDR=5V 2 na Photodiode Capacitance Ct VDR=5V, f=1 MHz pf Photodiode Cutoff Frequency fcm VDR=5V, 5Ω load MHz Peak Wavelength λp Note (2) Note (4) nm Side Mode Suppression Sr Note (2) 33 35 Spectral Width (2) Note (2).5 nm Rise Time (%9%) tr Note (2).1.125 nsec Fall Time (%9%) tf Note (2).1.125 nsec Cutoff Frequency fc Pf=mW, 3 4. GHz InBand Ripple (Window) S21 f=5 MHz~3 GHz Relative Intensity Noise RIN f=5 MHz~2 GHz RF Return Loss S11 f=2 GHz~3 GHz f=3 GHz~5 GHz f=2.5 GHz Pf= mw, ORL=24 25 Power Penalty PP Note (3) 1.5 8 +/1.5 6 3 Optical Isolation Is Tc=2 to 65 C 25 35 Note 1. TE=*log{pf(Tcase)/Pf(Tc=25 C)}, APC Note 2. 2.5 Gb/s NRZ, pseudorandom, Pb=.2mW, Ppeak=2.mW Note 3. Bit rate=2.48832 Gb/s, PRBS=2 23 1, Dispersion=1,8 ps/nm (116km), Ppeak=mW, Pbias=1.mW (Extinction ratio=), B.E.R.=1x Decision point: Center of BacktoBack at Decision point: Center of BacktoBack at 9, Receiver: Fujitsu Standard Receiver Note 4. The selected wavelengths available are listed in Fig. 8 1.6 1.75 14 V µw /Hz 2
1,55nm MQWDFB DWDM Direct Modulation Laser FLD5F6CXJ TEC AND THERMISTOR CHARACTERISTICS ( Tc=25 C, BOL, unless otherwise specified) Limit Parameter Symbol Test Conditions Unit Min. Typ. Max. TEC Current Ic 1. A Pf=mW, Tc=65 C TEC Voltage Cooler Power Vc PTEC Pf=mW, Tc=65 C Pf=mW, Tc=65 C 2.4 2.4 V W TEC Resistance RTEC Pf=mW, Tc=65 C 2. 2.4 3.2 Ω Thermistor Resistance Rtr TL=15 to 35 C 7.7 12.6 kω Thermistor B Constant B 3,27 3,45 3,63 K Fig. 1 Forward Current vs Output Power Fig. 2 Frequency Response Output Power, Pf (mw) 5 TL = 25 C Relative Output () 12 9 6 3 3 6 9 12 Pf=mW 3 6 9 Forward Current, If (ma) 2 4 6 8 Frequency (GHz) 3
FLD5F6CXJ 1,55nm MQWDFB DWDM Direct Modualtion Laser Fig. 3 RF Return Loss Fig. 4 Cooler Voltage Current Return Loss () 2 2 2 4 6 8 Frequency (GHz) Cooler Voltage (V) 3. 2. 1.. 1. 2 3 4 5 6 Case Temperature ( C) Vc Ic 3. 2. 1.. 1. 7 8 Cooler Current (A) Fig. 5 Spectrum Fig. 6 Temperature Dependance of Wavelength (ACC) 1554 Relative Intensity () 2 3 4 5 6 1545 155 1555 Wavelength (nm) 1553 1552 1551 155 2 3 4 Wavelength λ (nm) Laser Temperature, TL ( C) 4
1,55nm MQWDFB DWDM Direct Modulation Laser FLD5F6CXJ Fig. 7 Transmission Characteristics Bit Error Rate 4 6 8 Back to Back 2.48832 Gb/s, NRZ PRBS 2 231 Ppeak=mW, Pb=1mW, (Rext=) After 116km Transmission 12 4 35 3 25 Average Received Optical Power (m) Fig. 8 Wavelength Table Part Number FLD5F6CXJ62 J61 J6 J59 J58 J57 J56 J55 J54 J53 J52 J51 J5 J49 J48 J47 J46 J45 J44 J43 J42 Wavelength (nm) (TL=Tset) (in vacuum) 1527.99 1528.77 1529.55 153.33 1531.12 1531.9 1532.68 1533.47 1534.25 1535.4 1535.82 1536.61 1537.4 1538.19 1538.98 1539.77 154.56 1541.35 1542.14 1542.94 1543.73 Tolerance (nm) J41 J4 J39 J38 J37 J36 J35 J34 J33 J32 J31 J3 J29 J28 J27 J26 J25 J24 J23 J22 J21 J2 J19 J18 1544.53 1545.32 1546.12 1546.92 1547.72 1548.51 1549.32 155.12 155.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.55 1557.36 1558.17 1558.98 1559.79 156.61 1561.42 1562.23 1563.5 5
FLD5F6CXJ CX PACKAGE 1,55nm MQWDFB DWDM Direct Modualtion Laser UNIT: mm 17.24 15.24 2.54 14.5 PIN 7 PIN 1 All dimensions are in millimeters. TEC TOP VIEW 7 6 5 4 3 2 1 TH KΩ 14.6 φ.9 φ5.2 8.89 12.7 15.2 11.6 8 9 11 12 13 14 (Preliminary) PIN 8 2.83 22. 26.4 29.97 * Pigtail length (L) shall be specified in the detail (individual) specification, if it is special. L=15 min. for standard 4φ2.67 PIN 14 23 13 *L 4.15 5.47.5 1.7 P o.5 1.7 5.41 5.47 8.17 PIN # FUNCTION 1. Temperature Monitor 2. Temperature Monitor 3. Laser DC Bias () 4. Monitor (Anode) 5. Monitor (Cathode) 6. TEHP (+) 7. TEHP () 8. Case Ground 9. Case Ground. N.C. 11. Laser Ground 12. Laser Modulation () 13. Case Ground 14. N.C. For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 951311138, U.S.A. Phone: (48) 23295 FAX: (48) 4289111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 () 1628 548 FAX: +44 () 1628 54888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 11, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +8522377226 FAX: +85223763269 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji DaiichiSeimei Bldg. 326 Myojincho Hachiojicity, Tokyo 19246, Japan TEL: +81426435885 FAX: +81426435582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. 2 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSIM2 6