MOSFET OptiMOS ª 3PowerTransistor,1V D²PAK Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Idealforhighfrequencyswitchingandsynchronousrectification HalogenfreeaccordingtoIEC61249221 Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 4.2 mω ID 137 A Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPB42N1N3 G PGTO 2633 42N1N 1) JSTD2 and JESD22 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 3 Electrical characteristics diagrams........................................................... 5 Package Outlines........................................................................ 9 Revision History........................................................................ 1 Trademarks........................................................................... 1 Disclaimer............................................................................ 1 2
1Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID 137 15 A TC=25 C 1) TC=1 C Pulsed drain current 1) ID,pulse 548 A TC=25 C Avalanche energy, single pulse EAS 34 mj ID=1A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 214 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case RthJC.7 K/W Thermal resistance, junction ambient, minimal footprint RthJA 62 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 2) RthJA 5 K/W 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=15µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=1V,VGS=V,Tj=25 C VDS=1V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG 1.4 Ω 3.6 4.4 4.2 7.4 mω VGS=1V,ID=1A VGS=6V,ID=5A Transconductance gfs 73 145 S VDS >2 ID RDS(on)max,ID=1A 1) See Diagram 3 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3
Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 632 841 pf VGS=V,VDS=5V,f=1MHz Output capacitance Coss 121 161 pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 41 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 27 ns Rise time tr 59 ns Turnoff delay time td(off) 48 ns Fall time tf 14 ns VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω VDD=5V,VGS=1V,ID=5A, RG=1.6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 3 39 nc VDD=5V,ID=1A,VGS=to1V Gate to drain charge Qgd 16 nc VDD=5V,ID=1A,VGS=to1V Switching charge Qsw 27 nc VDD=5V,ID=1A,VGS=to1V Gate charge total Qg 88 117 nc VDD=5V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 4.7 V VDD=5V,ID=1A,VGS=to1V Output charge Qoss 122 162 nc VDD=5V,VGS=V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 134 A TC=25 C Diode pulse current IS,pulse 548 A TC=25 C Diode forward voltage VSD 1. 1.2 V VGS=V,IF=1A,Tj=25 C Reverse recovery time trr 68 ns VR=5V,IF=IS,diF/dt=1A/µs Reverse recovery charge Qrr 135 nc VR=5V,IF=IS,diF/dt=1A/µs 1) See Gate charge waveforms for parameter definition 4
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 25 Diagram2:Draincurrent 14 2 12 1 Ptot[W] 15 1 8 6 4 5 2 5 1 15 2 TC[ C] Ptot=f(TC) 25 5 75 1 125 15 175 2 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 µs 1 µs.5 1 2 1 µs.2 1 ms 1 1.1 1 1 1 ms DC ZthJC[K/W] 1 2.5.2.1 1 single pulse 1 1 1 1 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 3 1 6 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 5
Diagram5:Typ.outputcharacteristics 4 1 V 7.5 V 6 V 32 Diagram6:Typ.drainsourceonresistance 9 4.5 V 6 5 V 24 16 5.5 V 5 V RDS(on)[mΩ] 3 6 V 7.5 V 1 V 8 4.5 V 1 2 3 4 5 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 1 15 RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 2 Diagram8:Typ.forwardtransconductance 2 15 16 12 1 gfs[s] 8 5 175 C 25 C 4 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 5 1 15 gfs=f(id);tj=25 C 6
Diagram9:Drainsourceonstateresistance 1 Diagram1:Typ.gatethresholdvoltage 4. 8 3.5 3. 15 µa RDS(on)[mΩ] 6 4 98 % typ VGS(th)[V] 2.5 2. 1.5 15 µa 2 1..5 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=1A;VGS=1V. 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss 1 3 25 C 25 C, max 175 C 175 C, max Coss 1 3 1 2 C[pF] IF[A] 1 2 Crss 1 1 1 1 2 4 6 8 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 7
Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge 1 8 IAS[A] 1 2 25 C 1 C VGS[V] 6 2 V 8 V 5 V 1 1 15 C 4 2 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 4 6 8 1 Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 11 Gate charge waveforms 15 VBR(DSS)[V] 1 95 9 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8
5PackageOutlines Figure1OutlinePGTO2633,dimensionsinmm/inches 9
RevisionHistory IPB42N1N3 G Revision:217717,Rev.2.9 Previous Revision Revision Date Subjects (major changes since last revision) 2.9 217717 Update product current TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 217InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1