TPP CONDUCTORS MATERIALS AND CERAMICS MPS R700 S MPS 2 R300 S MPS 2 R300 DCS MPS R400 DS MPS R400 DS Twin MPS R400 GGP MPS 3HS MPS 3-134 Twin Solar block Grinder MPS T 500 NANOGRINDER/3 NANOGRINDER 941-3/300 IFG 320 NANOGRINDER/4 Safe handling of thin wafers MULTINANO/3-300 Back to mach. pgr.
Manuel machine to polish semiconductor material Single side polishing of Wafers......up to 6 diameter Video clip Technical Data Features Polishing plate Polishing pad Ø 360 mm Ø 350 mm Three phase motor Infinite variable speed of the polishing plate Speed Motor 50-350 rpm Infinitely variable 0,55 kw Slurry feeding Wafer centering by roller system Vacuum system Noise Space Net weight <67 db(a) 1200 x 542 mm 123 kg Rotating polishing chucks
Ideal for the high demands of grinding electronic materials Information Technical data go! Machine features go! TTV Measuring protocol go!
Technical Data Chucks 2" 3" 4" 5" 6" 8" 18 8 5 3 2 1 Motor 2,2 kw * Spindle speed 2560 min -1 Electronical connection Air Water 3,2 kw 6 bar 4 5 bar Rotary table speed 0 30 min -1 Rotary table 300 mm Precision 3 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 175 x 100 x 76 175 x 40 x 76 12 mm 1 µm 35 l 67 db(a) MPS 2 R300 S General Space (l x w x h) 950 x 865 x 1730 Weight 600 kg Surface quality *Center grinding
MPS 2 R300 S Machine features Use One-side or back grinding of semiconductor wafers up to 150 mm diameter Application Batch production, research and development departments, where materials have to be ground with micron precision Accesories Vacuum chucks Diamond grinding wheels Coolant Protective foils for sensitive front side surfaces Characteristics Precision surface grinding machine with automatic grinding cycles and vacuum chuck system MPS 2 R300 S General
MPS 2 R300 S TTV Measuring protocol Surface quality MPS 2 R300 S General
Safe and Easy of Semiconductor Material Information Technical data + machine features TTV Measuring protocol go! go!
Technical Data Chucks 2" 3" 4" 5" 6" 8" 18 8 5 3 2 1 Motor Spindle speed Electronical connection Air Water 2,2 kw Infinitely variable 3,2 kw 6 bar 4 5 bar Rotary table speed 0 30 min -1 Rotary table 300 mm Precision 3 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 175 x 100 x 76 175 x 40 x 76 12 mm 1 µm 35 l 65 db(a) Space (l x w x h) 1400 x 930 x 1760 Weight 780 kg * MPS 2 R300 DCS Machine features Optimized application Production environments where high accuracy is required Application Rough and finish grinding of semiconductor and other materials at highest flatness accuracy Features Fully enclosed grinding area Inprocess gauge Automatic fine infeed PLC-automation Rotary table Vacuum chucks MPS 2 R300 DCS General *Center grinding
MPS 2 R300 DCS TTV Measuring protocol Surface quality MPS 2 R300 DCS General
Fully enclosed Area Increased power efficiency Digital control concept Information Technical data + Machine features go! TTV Measuring protocol MPS R 400DS + TWIN SPINDLE go! go! MPS R400DS TWIN: Thinning wafer to 50 µm Safe handling of thin wafers
*Center grinding Technical Data Chucks 2" 3" 4" 5" 6" 8" 28 16 8 5 4 1 Motor Spindle speed Electronical connection Air Water Rotary table speed Rotary table 3,7 kw Infinitely variable 5,5 kw 6 bar 4 5 bar 0 200 rpm 400 mm Precision 2 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 200 x 100 x 76 175 x 34 x 76 170 mm 1 µm 35 l 65 db(a) Space (l x w x h) 1550 x 1130 x 1890 Weight 950 kg * MPS R400 DS Machine features Application of semiconductor wafer in the range of 50 up to 150 mm diameter Characteristics Designed to take advantage of state-ofthe-art grinding technologies and ergonomics Features Fully enclosed grinding area Diamond grinding wheels Automatic grinding programs PLC-control Measuring unit Minimal TTV s Vacuum chucks Consistent grinding results MPS R400 DS General
MPS R400 DS TTV Measuring protocol Surface quality MPS R400 DS General
+ Twinspindle principle Two grinding wheels on one spindle Unbeatable workpiece geometry High stock removal at finest finishes Advantages No wheel change between roughing and fine finishing Back to MPS R 400 DS Roughing and finishing in one setting No secondary or rechucking of workpiece for fine finishing Shortest changeover times
One Machine for Polishing Information Technical data + Machine features go! TTV Measuring protocol go! Video clip
Motor MPS R400 GGP Machine features Spindle speed Technical Data Electronical connection Air Rotary table speed Rotary table 3,7 kw Infinitely variable 5,5 kw 6 bar 0 200 rpm 400 mm Precision 2 µm Cup Wheel New vitrified Diamond / CBN height above RT New vitrified Diamond /CBN height above M. chuck New vitrified Diamond /CBN Fine height adjustment Range min. step Cooland tank Noise level 200 x 100 x 76 200 x 34 x 76 185 mm 210 mm 95 mm 160 mm 170 mm 1 µm 35 l 65 db(a) Space (l x w x h) 1550 x 1130 x 1890 Weight 950 kg Application and polishing semiconductor material in one process Characteristics In addition to the MPS R400 DS, this maschine is additionally equiped with a grinding and a polishing spindle Features Fully enclosed grinding area TWIN SPINDLE + diamond grinding wheels Automatic change grinding/polishing PLC-Control Measuring unit Automatic programs Vacuum chucks Minimal TTV s MPS R400 GGP General
MPS R400 GGP TTV Measuring protocol (after grinding process) Surface quality MPS R400 GGP General
Characteristics Precision rotary table surface grinding machine with hydrostatically supported rotary table. A concept with infinite possibilities without compromise to precision AC motor Spindle speed Elec. Connection Technical Data 7.5 kw 2850 rpm 12 kw Runout rotary table 2 µm wheels CBN/Diamond 350x40x127mm Rotary table Number of chucks Rotary table speed 700 mm 108x2"; 48x3"; 31x4"; 20x5"; 14x6"; 7x8 ; 3x12 (batch); 1x12 (center) 0-20 rpm Fine Downfeed Range 30 mm Min. step 1 µm Weight Area 3100 kg 3000x2300 mm Surface quality This machine is particularly suited for grinding of wafers in large quantities and for back grinding of very thin wafers The machine can be optimally adapted to each particular application MPS R700S Twin
High Precision even in Large Scale Production Comprehensive accessories optimize the machine use over a wide range of materials and workpieces Technical Data Motor Spindle speed Electronical connection 4 kw Infinitely variable 6,5 kw Precision 2 µm MPS 3HS Twin Characteristics Cup Wheel New vitrified Diamond / CBN area (l x w) height above Table New vitrified Diamond / CBN height above M.chuck New vitrified Diamond / CBN 250 x 100 x 76 mm 250 x 40 x 76 mm 510 x 230 mm 243 mm 303 mm 128 mm 188 mm Precision surface grinding machine with fully automatic grinding cycles, inprocess gage, vacuum clamping and controllable damage depths. Surface quality Fine height adjustment Range Min. step Coolant tank Noise level 12 mm 1 µm 250 l 67 db(a) Space (l x w x h) 2900 x 2000 Weight 1100 kg
Ingot face grinding machine, special designed for facing silicon ingots Mechanical clamping Diamond grinding wheel PLC-control Automatic fine infeed system Programmable grinding cycles Technical data A.C. motor 4 kw Spindle speed max.1500 rpm Accuracy 1 µm Diamond grinding wheel Diameter 432 mm rim 10 mm head Stroke 350 mm Speed 300 mm/min Workpiece clamping max. Ingot size(ø x l) 320 x 610 mm Adjustment horiz. ±10 Adjustment vertical ±7 Adjustment cross 30 mm Main slide Stroke 200 mm Speed 1000 mm/min Fine infeed Stroke 450 mm Accuracy 1 µm Speed 0-180 mm/min Min. Step 1 µm Hydraulic system Pump 2.2 kw Volume of tank 25 l Pressure 25 bar Space app. 3000 x 2000 mm Weight ca. 2100kg
G&N Twinspindle Twinspindle principle Roughing Finishing with Twinspindle Two grinding wheels on one spindle Roughing and finishing in one setting High stock removal at finest finishes Unbeatable workpiece geometry No wheel change between roughing and fine finishing No secondary or rechucking of workpiece for fine finishing shortest change-over times Twinspindle with polygon wheels MPS R400DS Twin MPS R400GGP Twin MPS 3HS MPS R700S
Surface quality diagram Average Ra.-value of the grinding wheels [Å] Steel Ha.-Metal Alu Ceramic Al 2 O 3 Glass Si # 8000 25 # 4000 40 D3 100 D7K 50 20 160 D15K 90-170 100-70 200-80 D15M 1000 D20K D20M D25K 1100 D25M D35K D35M 1750 D46K 90-200 80-2000 2800-3500 700-1300 1000-2500 D46M 1000-1500 D76K 1200-1800 1400-1900 500-900 D76M D91K 2300-2900 2000-6000 D91M 2200-2800 2000-8000 2000 5000-12000 D107K D107M D126K 1800-2000 3700-4000 D126M 5000-8000 B30K 400-800 600 B46K 1200-1500 2500-2800 2700-3000 B76K 900-1300 1000- B107K 15005 B126K 1200-1500 2500-2800 2700-2900 1A46J14 EK120 6000-15000 2300-10000 Sub surface damage SC320 600-1600 Values in µm Index
Surface quality diagram Average Ra.-value of the grinding wheels [ µm] Steel Ha.-Metal Alu Ceramic Al 2 O 3 Glass Si # 8000 0,0025 # 4000 0,004 D 3 0,01 D7K 0,005 0,002 0,016 D15K 0,009-0,017 0,01-0,07 0,02-0,08 D15M 0,1 D20K D20M D25K 0,11 D25M D35K D35M 0,175 D46K 0,009-0,02 0,08-0,2 0,28-0,35 0,07-0,13 0,1-0,25 D46M 0,1-0,15 D76K 0,12-0,18 0,14-0,19 0,05-0,09 D76M D91K 0,23-0,29 0,2-0,6 D91M 0,22-0,28 0,2-0,8 0,2 0,5-1,2 D107K D107M D126K 0,18-0,2 0,37-0,4 D126M 0,5-0,8 B30K 0,04-0,08 0,06 B46K 0,12-0,15 0,25-0,28 0,27-0,3 B76K 0,09-0,13 B107K 0,1-0,15 B126K 0,12-0,15 0,25-0,28 0,27-0,29 1A46J14 0,6-1,5 EK120 0,23-1,0 SC320 0,06-0,16 Values in Å Sub surface damage
Sub surface Damage Schleifscheibe Damagetiefe D 46 20 25 µm D 25 M 18 20 µm D 3 M 2 µm # 2000 1,8 µm # 4000 0,5 0,75 µm # 8000 <0,4 µm (0,25µm) Details about the sub surface damage problem INDEX
Machining of the surface of single crystal silicon wafer by lapping or grinding leads to crystal damages. These damages are not only on the crystal surface but also in a area beyond the surface (Sub Surface Damage, HD). Usually the first three areas (polycrystalin, cracks, transition) are called SUB SURFACE DAMAGE. HD The sub surface damage area must be removed by etching and CMP before building chips on the wafer surface. Important is how deep the sub surface damage is reaching into the silicon. There are big differences between the two main machining principes, grinding and lapping. Next Back
Lapping F F Bonded grain Main force F parallel to the surface Anisotropic surface with grinding traces Rolling grain Main force F orthogonal to the surface Isotropic surface Next Back
The sub surface damage can only be compared when you look at the same grain size! (D46 slicing, D46 grinding, SiC lapping; D15A grinding, SiC F600 lapping; D7 grinding, FO1200 lapping) The figures show that grinding leads to smaller (approx. 50% or less) sub surface damage than lapping! Back
Super finishing of mono+polycrystalline silicon blocks for solar wafer Machine MPS 3-134 n n n n n n Prepared for robot-loading of blocks Main grinding spindle with combiwheel D46/D15 Second grinding spindle for simultaneously chamferring the edges of the block. chamferring of the edges and grinding of the faces in the same clamping position (no rechucking) Automatic handling (loading, unloading, turning) of the block. Automatic grinding process High precision fully automatic flat grinding machine with oscillating table and two spindles process/technical data
High precision solar block grinding process process D46 first 1. grinding step D15 sec 2. grinding step 3. grinding step 4. grinding step block turning 90 block turning 90 block turning 90 Video Roughing Finishing Chamferring Specification Technical Data block diameter 156 x 156 mm block length 180-265 mm Flat gringing spindle AC motor 7.5 kw Speed 1430 rpm Combiwheel D46/D15 Chamferring spindle AC motor 2.2 kw Speed 3000 rpm Combiwheel D46/15 Block clamping Vacuum Block handling Pneumatic El. connection 10 kw Water 80l/h Air 15m³/h Weight 1600 kg Footprint 3000x 2100 mm Height 2440 mm results
Cracking reduction rate (%) results The diagram shows the decrease-of-breaking rate of the solar wafers vs. the surface quality of the solar blocks before sawing. 4 3 2 1 0 5 10 15 20 25 Surface roughness Ry (µm) The strong reduction of the breaking rate can be explained as follows. Surface damages on the block faces, which are the major cause of breaking are removed by the fine grinding process. Back to MPS 3-134