Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low Noise Figure: 1.9 db Typical NF O at 2. GHz High Gain-Bandwidth Product: 8. GHz Typical f T Surface Mount Plastic Package Tape-and-Reel Packaging Option Available [1] Description Agilent s AT-286 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-286 is housed in a low cost surface mount.85" diameter Note: 1. Refer to PACKAGING section Tapeand-Reel Packaging for Semiconductor Devices. plastic package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 2 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 5 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-286 bipolar transistor is fabricated using Agilent s 1 GHz f T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 86 Plastic Package Pin Connections BASE 1 EMITTER 2 2 EMITTER 3 COLLECTOR

2 AT-286 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V 2 V CEO Collector-Emitter Voltage V 12 I C Collector Current ma 8 P T Power Dissipation [2,3] mw 5 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Thermal Resistance [2,] : θ jc = 1 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25 C. 3. Derate at 7.1 mw/ C for T C > 8 C.. See MEASUREMENTS section Thermal Resistance for more information. Part Number Ordering Information Part Number Increment Comments AT-286-BLK 1 Bulk AT-286-TR1 1 Reel Note: For more information, see Tape and Reel Packaging for Semiconductor Devices. Electrical Specifications, T A = 25 C Symbol Parameters and Test Conditions Units Min. Typ. Max. S 21E 2 Insertion Power Gain; V CE = 8 V, I C = 35 ma f = 1. GHz db 15. 16.5 f = 2. GHz 1.5 f =. GHz.5 P 1 db Power Output @ 1 db Gain Compression f = 2. GHz dbm 2.5 V CE = 8 V, I C = 35 ma f=. GHz 2. G 1 db 1 db Compressed Gain; V CE = 8 V, I C = 35 ma f = 2. GHz db 13.5 f =. GHz 9. NF O Optimum Noise Figure: V CE = 8 V, I C = 1 ma f = 2. GHz db 1.9 f =. GHz 3.5 G A Gain @ NF O ; V CE = 8 V, I C = 1 ma f = 2. GHz db 13. f =. GHz 9. f T Gain Bandwidth Product: V CE = 8 V, I C = 35 ma GHz 8. h FE Forward Current Transfer Ratio; V CE = 8 V, I C = 35 ma 3 15 27 I CBO Collector Cutoff Current; V CB = 8 V µa.2 I EBO Emitter Cutoff Current; V EB = 1 V µa 2. C CB Collector Base Capacitance [1] : V CB = 8 V, f = 1 MHz pf.32 Note: 1. For this test, the emitter is grounded.

3 AT-286 Typical Performance, T A = 25 C G1 db (db) P1 db (dbm) 2 2 16 12 8 P 1dB G 1dB 1 2 3 5 I C (ma) 2. GHz. GHz 2. GHz. GHz Figure 1. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = 8 V. S21E 2 GAIN (db) 2 16 12 8 1. GHz 2. GHz. GHz 1 2 3 5 I C (ma) Figure 2. Insertion Power Gain vs. Collector Current and Frequency. V CE = 8 V. GAIN (db) 35 3 25 2 15 1 5 MSG S 21E 2.1.3.5 1. 3. 6. FREQUENCY (GHz) MAG Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = 8 V, I C = 35 ma. 2 21 18 G A GAIN (db) 15 12 9 3 6 3 NF O 2 1 NFO (db).5 1. 2. 3.. 5. FREQUENCY (GHz) Figure. Noise Figure and Associated Gain vs. Frequency. V CE = 8 V, I C = 1 ma.

AT-286 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =25 C, V CE =8 V, I C = 1 ma Freq. S 11 S 21 S 12 S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1.68-8 28. 25.12 153-36..16 65.91-15.5.63-11 2.9 11.7 12-29.9.32 2.5-3 1..63-176 15. 5.87 8-27..3 3.3-3 1.5.65 16 12. 3.98 65-26..5 6. -3 2..66 151 9.5 2.99 53-23.9.6 52.38-2.5.69 12 7.8 2. 5-23.1.7 53.36-6 3..71 132 6.2 2. 3-21.6.8 5.3-5 3.5.73 123.8 1.7 2-19.7.1 53.33-67..75 115 3.6 1.51 1-18.3.122 51.3-8.5.78 18 2.6 1.3 5-17.2.138 5.31-9 5..8 11 1.6 1.2 - -16..159 6.31-11 5.5.82 95.6 1.8-12 -1.8.182.32-129 6..85 89 -.2.97-21 -1..2 35.3-18 AT-286 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =25 C, V CE =8 V, I C = 35 ma Freq. S 11 S 21 S 12 S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang..1.8-9 32.8 3.62 137-37.7.13 65.77-25.5.57-168 22. 13.21 92-32.6.23 57.39-28 1..59 168 16.5 6.69 75-28.7.37 62.33-27 1.5.61 15 13..8 62-2.8.57 6.31-31 2..63 13 1.5 3.36 51-23..71 61.29-37 2.5.68 137 8.7 2.72 3-21..89 56.26-5 3..68 127 7. 2.25 33-19.7.1 58.25-53 3.5.71 118 5.7 1.92 2-18..121 55.2-65..73 111.5 1.69 1-17.3.136 9.2-8.5.76 1 3.5 1.9 5-15.9.161 6.21-95 5..78 98 2. 1.32-3 -15.2.17 3.21-115 5.5.81 91 1.6 1.2-12 -1.3.193 36.22-136 6..8 85.7 1.8-2 -13..213 31.25-156 A model for this device is available in the DEVICE MODELS section. AT-286 Noise Parameters: VCE = 8 V, IC = 1 ma Freq. NF Γ O opt GHz db Mag Ang R N /5.1 1.. 8.13.5 1.1.3 62.12 1. 1.5.6 168.12 2. 1.9.25-16.12. 3.5.58-1.52

5 86 Plastic Package Dimensions.51 ±.13 (.2 ±.5) 5 C L 1 3 2.3 ±.38 (.92 ±.15) 2 1.52 ±.25 (.6 ±.1) 2.67 ±.38 (.15 ±.15) 5 TYP..23 ±.51 (.6 ±.2).66 ±.13 (.26 ±.5).3 MIN (.12 MIN) 2.16 ±.13 (.85 ±.5) 8 MAX MIN DIMENSIONS ARE IN MILLIMETERS (INCHES)