NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features Complement to NSS3MZ Series NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = unless otherwise noted) NPN TRANSISTOR 3. AMPERES VOLTS, 2. WATTS B E 3 Schematic 2 3 C 2, SOT223 CASE 38E STYLE MARKING DIAGRAM Rating Symbol Value Unit CollectorEmitter Voltage V CEO Vdc CollectorBase Voltage V CB Vdc AYW 3 EmitterBase Voltage V EB 6. Vdc Base Current Continuous I B. Adc Collector Current Continuous I C 3. Adc Collector Current Peak I CM 5. Adc Total Power Dissipation Total P D @ T A = (Note ) Total P D @ T A = (Note 2) Operating and Storage Junction Temperature Range P D 2..8 W T J, T stg 55 to + 5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Mounted on sq. (65 sq. mm) Collector pad on FR bd material. 2. Mounted on.2 sq. (7.6 sq. mm) Collector pad on FR bd material. A = Assembly Location Y Year W = Work Week 3 = Specific Device Code = PbFree Package PIN ASSIGNMENT B C C E 2 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 23 September, 23 Rev. 3 Publication Order Number: NSS3MZ/D
NSS3MZ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase JunctiontoAmbient on sq. (65 sq. mm) Collector pad on FR bd material JunctiontoAmbient on.2 sq. (7.6 sq. mm) Collector pad on FR bd material R JA 6 R JA 55 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds T L 26 C ELECTRICAL CHARACTERISTICS (T C = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = Adc) V CEO(sus) Vdc EmitterBase Voltage (I E = 5 Adc, I C = Adc) V EBO 6. Vdc Collector Cutoff Current (V CB = Vdc) I CBO nadc Emitter Cutoff Current (V BE = 6. Vdc) I EBO nadc ON CHARACTERISTICS (Note 3) CollectorEmitter Saturation Voltage (I C =.5 Adc, I B = 5 madc) (I C =. Adc, I B = 2 madc) (I C = 3. Adc, I B =.3 Adc) V CE(sat).5..2 Vdc BaseEmitter Saturation Voltage (I C =. Adc, I B =. Adc) V BE(sat). Vdc BaseEmitter On Voltage (I C =. Adc, V CE = 2. Vdc) V BE(on).9 Vdc DC Current Gain (I C =.5 Adc, V CE =. Vdc) (I C =. Adc, V CE =. Vdc) (I C = 3. Adc, V CE =. Vdc) h FE 22 2 5 DYNAMIC CHARACTERISTICS Output Capacitance (V CB = Vdc, f =. MHz) C ob 25 pf Input Capacitance (V EB = 5. Vdc, f =. MHz) C ib 7 pf CurrentGain Bandwidth Product (Note ) (I C = 5 ma, V CE = V, F test =. MHz) 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. f T = h FE f test f T 25 MHz 2.5 P D, POWER DISSIPATION (W) 2..5..5 T C T A 25 5 75 25 5 T J, TEMPERATURE ( C) Figure. Power Derating 2
NSS3MZ TYPICAL CHARACTERISTICS h FE, DC CURRENT GAIN 6 5 3 2 5 C 55 C V CE = V h FE, DC CURRENT GAIN 7 6 5 3 2 5 C 55 C V CE = V...... Figure 2. DC Current Gain Figure 3. DC Current Gain V CE(sat), COLLECTOREMITTER.. I C /I B = 5 C 55 C V CE(sat), COLLECTOREMITTER. I C /I B = 5 5 C 55 C.... Figure. CollectorEmitter Saturation Voltage.... Figure 5. CollectorEmitter Saturation Voltage V CE(sat), COLLECTOREMITTER.... I C = 3 A 2 A A.5 A. A... V BE(on), EMITTERBASE VOLTAGE (V).2..8.6..2. V CE = 2 V. 55 C 5 C. I B, BASE CURRENT (A) Figure 6. Collector Saturation Region Figure 7. V BE(on) Voltage 3
NSS3MZ TYPICAL CHARACTERISTICS.. V BE(sat), EMITTERBASE.2 I C/I B =..8.6..2 55 C 5 C V BE(sat), EMITTERBASE.2 I C/I B = 5..8.6..2 55 C 5 C...... Figure 8. BaseEmitter Saturation Voltage Figure 9. BaseEmitter Saturation Voltage C ibo, INPUT CAPACITANCE (pf) 5 35 3 25 2 5 5 2 3 5 T J = f test = MHz 6 C obo, OUTPUT CAPACITANCE (pf) 8 6 2 T J = f test = MHz 7 8 2 3 5 6 7 8 9 V EB, EMITTER BASE VOLTAGE (V) V CB, COLLECTOR BASE VOLTAGE (V) Figure. Input Capacitance Figure. Output Capacitance f Tau, CURRENT BANDWIDTH PRODUCT (MHz) 2 2 6 2 8 T J = f test = MHz V CE = V. ms ms.5 ms ms.... V CE, COLLECTOREMITTER VOLTAGE (V) Figure 2. CurrentGain Bandwidth Product Figure 3. Safe Operating Area
NSS3MZ ORDERING INFORMATION NSS3MZTG Device Package Shipping SOT223 (PbFree), / Tape & Reel NSV3MZTG* SOT223 (PbFree), / Tape & Reel NSS3MZT3G SOT223 (PbFree), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable 5
NSS3MZ PACKAGE DIMENSIONS D b SOT223 (TO26) CASE 38E ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99. 2. CONTROLLING DIMENSION: INCH..8 (3) H E e A e 2 3 A b E L L C MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.63.75.6.6.68 A.2.6...2. b.6.75.89.2.3.35 b 2.9 3.6 3.2.5.2.26 c.2.29.35.9.2. D 6.3 6.5 6.7.29.256.263 E 3.3 3.5 3.7.3.38.5 e 2.2 2.3 2..87.9.9 e.85.9.5.33.37. L.2.8 L.5.75 2..6.69.78 H E 6.7 7. 7.3.26.276.287 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 3.8.5 2..79 2.3.9 2.3.9 6.3.28 2..79.5.59 SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 83386 Toll Free USA/Canada Fax: 33675276 or 833867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 2 33 79 29 Japan Customer Focus Center Phone: 835875 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS3MZ/D