P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.) - 3.65 at V G = - V - 35 nc 8 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View 3 G 4 Ordering Information: i7447ap-t-e3 (Lead (Pb)-free) i7447ap-t-ge3 (Lead (Pb)-free and Halogen-free) FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET New Low Thermal Resistance PowerPAK Package with Low.7 mm Profile % R g Tested APPLICATION Battery and Load witching - Notebook Computers - Notebook Battery Packs G P-Channel MOFET ABOLUTE MAXIMUM RATING T A = 5 C, unless otherwise noted Parameter ymbol Limit Unit rain-ource Voltage V - 3 V Gate-ource Voltage V G ± 5 T C = 5 C - 35 T C = 7 C - 8 Continuous rain Current (T J = 5 C) I T A = 5 C -.5 b, c T A = 7 C - 7 b, c A Pulsed rain Current I M - 6 T C = 5 C - 8 Continuous ource-rain iode Current I T A = 5 C - 4.3 b, c ingle Pulse Avalanche Current I A 4 L =. mh Avalanche Energy E A 8 mj T C = 5 C 83.3 T C = 7 C 53.3 Maximum Power issipation P W T A = 5 C 5.4 b, c T A = 7 C 3.4 b, c Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C oldering Recommendations (Peak Temperature) d, e 6 THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t s R thja 8 3 C/W Maximum Junction-to-Case (rain) teady tate R thjc..3 Notes: a. Based on T C = 5 C. b. urface Mounted on " x " FR4 board. c. t = s. d. ee older Profile (/doc?7357). The PowerPAK O-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under teady tate conditions is 65 C/W. 9-73-Rev. C, 6-Feb-9
PECIFICATION T J = 5 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic rain-ource Breakdown Voltage V V G = V, I = - 5 µa - 3 V V Temperature Coefficient ΔV /T J - 33 I = - 5 µa V G(th) Temperature Coefficient ΔV G(th) /T J 5.3 mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = - 5 µa - -. - 3 V Gate-ource Leakage I G V = V, V G = ± 5 V ± na V = - 3 V, V G = V - Zero Gate Voltage rain Current I V = - 3 V, V G = V, T J = 55 C - µa On-tate rain Current a I (on) V - 5 V, V G = - V - 3 A rain-ource On-tate Resistance a R (on) V G = - V, I = - 4 A.54.65 Ω Forward Transconductance a g fs V = - 5 V, I = - 4 A 5 V = - 5 V, V, I = - 4 A ynamic b Input Capacitance C iss 465 Output Capacitance C oss V = - 5 V, V G = V, f = MHz pf Reverse Transfer Capacitance C rss 93 Total Gate Charge Q g 5 Gate-ource Charge Q gs V G = - 5.5 nc Gate-rain Charge Q gd 5 Gate Resistance R g f = MHz.7 3.5 5.3 Ω Turn-On elay Time t d(on) 3 Rise Time t r V = - 5 V, R L =.5 Ω 5 4 Turn-Off elay Time t d(off) I - A, V GEN = - V, R g = Ω 8 5 ns Fall Time t f 98 5 rain-ource Body iode Characteristics Continuous ource-rain iode Current I T C = 5 C - 8 Pulse iode Forward Current a I M - 6 A Body iode Voltage V I = - 4.3 A -.7 -. V Body iode Reverse Recovery Time t rr 47 7 ns Body iode Reverse Recovery Charge Q rr 5 75 nc I F = - 9 A, di/dt = - A/µs, T J = 5 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 9-73-Rev. C, 6-Feb-9
TYPICAL CHARACTERITIC 5 C, unless otherwise noted 6. V G = V thru 5 V 5. - rain Current (A) I 4 3 4 V - rain Current (A) I.8.6.4 T C = 5 C. 5 C - 55 C..4.8..6. V - rain-to-ource Voltage (V) Output Characteristics...5..5..5 3. 3.5 4. V G - Gate-to-ource Voltage (V) Transfer Characteristics.8 65 R (on) - On-Resistance (mω).6.4...8.6 V G = 4.5 V V G = V C - Capacitance (pf) 5 39 6 3 C rss C oss C iss.4 3 4 5 6 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage 5 5 5 3 V - rain-to-ource Voltage (V) Capacitance.6 I = 4 A - Gate-to-ource Voltage (V) V G 8 6 4 V = V V = V V = 5 V R (on) - On-Resistance (Normalized).4...8 V G = V V G = 4.5 V 4 63 84 5 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 9-73-Rev. C, 6-Feb-9 3
TYPICAL CHARACTERITIC 5 C, unless otherwise noted 6.5 - ource Current (A) I T J = 5 C T J = 5 C...4.6.8.. V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage R (on) - rain-to-ource On-Resistance (Ω).4.3. T J = 5 C. T J = 5 C. 4 6 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage.8.6 6 V G(th) (V).4. I = 5 µa I = 5 ma Power (W) 8. -. 4 -.4-5 - 5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage... Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) * I - rain Current (A). T C = 5 C ingle Pulse ms ms ms s s C... V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 4 9-73-Rev. C, 6-Feb-9
TYPICAL CHARACTERITIC 5 C, unless otherwise noted 8 I - rain Current (A) 6 4 Package Limited 5 5 75 5 5 T C - Case Temperature ( C) Current erating*.5 8. Power (W) 6 4 Power (W).5..5 5 5 75 5 5. 5 5 75 5 5 T C - Case Temperature ( C) Power, Junction-to-Case T A - Ambient Temperature ( C) Power, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 9-73-Rev. C, 6-Feb-9 5
TYPICAL CHARACTERITIC 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja = C/W 3. T JM - T A = P M Z (t) thja ingle Pulse 4. urface Mounted. -4-3 - - 6 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. uty Cycle =.5...5.. -4 ingle Pulse -3 - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?73358. 6 9-73-Rev. C, 6-Feb-9
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