Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz Small Signal Gain: 1 db typical Return Loss: 12 db typical NF: 4. db mid-band P1dB: 19 dbm, PSAT = 19 dbm at PIN = 1 dbm OTOI: > 25 dbm at Pout/tone = 8 dbm Bias: V + = 1.4 V, IDQ = 135 ma, VCTRL = 2.2 V, VG = -1 V Typical Package Dimensions: 5 x 5 x 1.5 mm Functional Block Diagram 32 31 3 29 28 27 26 25 33 9 1 11 12 13 14 15 16 General Description TriQuint s is a wideband gain block with adjustable gain control giving the user extra flexibility to fine tune system performance. Operating from 2 to 3GHz, the provides 19dBm P1dB and 1dB of small-signal gain with return losses of greater than 12dB. The is fabricated on TriQuint s production TQPHT15.15um GaAs phemt process and is offered in a robust, 5x5mm ceramic air-cavity QFN. With integrated DC blocking caps and fully match to 5ohms, the is easily integrated in both commercial and military system architectures. Pad Configuration Pad No. 1-4, 6-13, 15-21, 23-27, 29, 31-32 Gnd Symbol 5 RFIN 14 VG 22 RFOUT 28 V + 3 VCTRL or VG2 33 Gnd Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part ECCN Description EAR99 2 3 GHz GaAs Wideband Gain Block Preliminary Datasheet: Rev - 9-8-14-1 of 12 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Value (1) Bias Voltage (V + ) 1.4 V Drain Voltage (VD) 6 V (2) Gate Voltage Range (VG) -3 to V Control Voltage Range (VCTRL) -3 to 3 V Drain Current (ID) 15 ma Gate Current (IG) -2 to 1 ma Power Dissipation, 85 C (PDISS) 1.4 W Input Power, CW, 5 Ω, (PIN) 21 dbm Channel temperature (TCH) 2 C Mounting Temperature (3 Seconds) 26 C Storage Temperature -55 to 15 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Assure VD VCTRL 8 V. Compute VD = V + - IDQ*4 Recommended Operating Conditions Parameter Supply Voltage (V + ) Drain Voltage (VD) Drain Current (IDQ) Gate Voltage (VG) Gain Control Voltage (VCTRL) Value 1.4 V 5 V 135 ma -1 V Typical 2.2 V Temperature (TBASE) -4 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all operating conditions. Electrical Specifications Test conditions unless otherwise noted: 25 C, V + = 1.4 V, IDQ = 135 ma, VCTRL = 2.2 V, VG = -1 V Typical, CW Parameter Min Typical Max Units Operational Frequency Range 2 3 GHz Small Signal Gain 1 db Input Return Loss 12 db Output Return Loss 12 db Noise Figure (at mid-band) 4 db Output Power at 1 db Gain Compression 19 dbm Output TOI at Pout/tone = 8 dbm > 25 dbm Gain Temperature Coefficient -.1 db/ C Preliminary Datasheet: Rev - 9-8-14-2 of 12 - Disclaimer: Subject to change without notice
Median Lifetime, T M (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) Tbase = 85 C, V + = 1.4 V, 3 ºC*mm/W Channel Temperature (TCH) (no RF drive) VD = 5 V, VCTRL = 2.2 V, 15 C Median Lifetime (TM) IDQ = 135 ma, PDISS =.7 W 2.8 x 1^8 Hrs Thermal Resistance (θjc) (1) Tbase = 85 C, V + = 1.4 V (CW), 3 ºC*mm/W Vds = 5 V, IDQ = 135 ma, Channel Temperature (TCH) (with RF drive) ID_DRIVE = 142 ma, PIN = 1 dbm, 15 C Median Lifetime (TM) POUT = 19 dbm, Freq = 16 GHz, PDISS =.62 W 2.8 x 1^8 Hrs Notes: 1. Thermal resistance measured at back of the package. Test Conditions: VD = 6 V; Failure Criteria is 1% reduction in ID_MAX Median Lifetime vs. Channel Temperature 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 1E+4 FET5 1E+3 25 5 75 1 125 15 175 2 Channel Temperature, T CH ( C) Preliminary Datasheet: Rev - 9-8-14-3 of 12 - Disclaimer: Subject to change without notice
S21 (db) S22 (db) S21 (db) S22 (db) Noise Figure (db) S11 (db) Typical Performance: Small Signal Conditions unless otherwise specified: V + = 1.4 V, I DQ = 135 ma, VCTRL = 2.2 V, V G = -1 V Typical, CW, 25 C 11 Noise Figure vs. Frequency Input Return Loss vs. Frequency vs. Temp. 1 9 8-3 -6-9 -12 7-15 6 5 4-18 -21-24 -27 85 C 25 C -4 C 3 2 6 1 14 18 22 26 3-3 1 4 7 1 13 16 19 22 25 28 31 15 12 9 6 3 Gain vs. Frequency vs. Temperature 85 C 25 C -4 C 1 4 7 1 13 16 19 22 25 28 31 6 3-3 -6-9 -12-15 -18-21 -24-27 -3 Output Return Loss vs. Frequency vs. Temp. 85 C 25 C -4 C 1 4 7 1 13 16 19 22 25 28 31 15 12 9 6 3 Gain vs. Frequency vs. Control Voltage V.5 V 1. V 1.5 V 2.2 V -3-6 -9-12 -15-18 -21-24 ORL vs. Frequency vs. Control Voltage V.5 V 1. V 1.5 V 2.2 V -27 1 4 7 1 13 16 19 22 25 28 31-3 1 4 7 1 13 16 19 22 25 28 31 Preliminary Datasheet: Rev - 9-8-14-4 of 12 - Disclaimer: Subject to change without notice
P OUT (dbm) Gain (db) P1dB (dbm) P SAT (dbm) Typical Performance: Large Signal Conditions unless otherwise specified: V + = 1.4 V, I DQ = 135 ma, VCTRL = 2.2 V, V G = -1 V Typical, CW, 25 C 24 P1dB vs. Frequency Temp = 25 C 24 P SAT vs. Frequency 21 21 18 18 15 15 5 1 15 2 25 3 12 Pin = 1 dbm, Temp = 25 C 5 1 15 2 25 3 24 Output Power vs. Input Power vs. Frequency 12 Gain vs. Input Power vs. Frequency 21 18 9 15 12 14GHz 9 18GHz 2 6 2 3GHz 3 Temp = 25 C -5 5 1 15 P IN (dbm) 6 14GHz 3 18GHz 2 2 3GHz Temp = 25 C -5 5 1 15 P IN (dbm) Preliminary Datasheet: Rev - 9-8-14-5 of 12 - Disclaimer: Subject to change without notice
Control Current (ma) Drain Current (ma) Gate Current (ma) Typical Performance: Large Signal Conditions unless otherwise specified: V + = 1.4 V, I DQ = 135 ma, VCTRL = 2.2 V, V G = -1 V Typical, CW, 25 C 175 17 165 16 155 15 Drain Current vs. Input Power vs. Frequency 14GHz 18GHz 2 2 3GHz -4.66-4.67-4.68-4.69 Gate Current vs. Input Power vs. Frequency 14GHz 18GHz 2 2 3GHz 145-4.7 14 135-4.71 13-5 5 1 15 P IN (dbm) -4.72-5 5 1 15 P IN (dbm) Control Current vs. Input Power vs. Freq. 12.5 11.5 1.5 9.5 14GHz 8.5 18GHz 2 7.5 2 6.5 3GHz 5.5 4.5 3.5 2.5 1.5.5 -.5-5 5 1 15 P IN (dbm) Preliminary Datasheet: Rev - 9-8-14-6 of 12 - Disclaimer: Subject to change without notice
IM5 (dbc) IM5 (dbc) IM3 (dbc) IM3 (dbc) OTOI (dbm) OTOI (dbm) Typical Performance: Linearity Conditions unless otherwise specified: V + = 1.4 V, I DQ = 135 ma, VCTRL = 2.2 V, V G = -1 V Typical, CW, 25 C 38 35 32 29 26 OTOI vs. Frequency vs. Temperature 85 C 25 C -4 C 38 35 32 29 26 OTOI vs. Output Power vs. Frequency 14GHz 18GHz 2 2 3GHz 23 2 Pout/tone = 8 dbm, 1 MHz tone spacing 2 6 1 14 18 22 26 3 23 2-1 -5 5 1 15 2 Output Power/Tone (dbm) -3-33 -36-39 -42-45 -48-51 -54-57 -6-63 -66 IM3 vs. Frequency vs. Temperature 85 C 25 C -4 C Pout/tone = 8 dbm, 1 MHz tone spacing 2 6 1 14 18 22 26 3-2 -26-32 -38-44 -5 IM3 vs. Output Power vs. Frequency 14GHz 18GHz 2 2 3GHz -56-62 -68-74 -8-1 -5 5 1 15 2 Output Power/Tone (dbm) -3-33 -36-39 -42-45 -48-51 -54-57 -6-63 -66 IM5 vs. Frequency vs. Temperature Pout/tone = 8 dbm, 1 MHz tone spacing 85 C 25 C -4 C 2 6 1 14 18 22 26 3-32 -38-44 -5-56 -62 IM5 vs. Output Power vs. Frequency 14GHz 18GHz 2 2 3GHz -68-74 -8-86 -92-1 -5 5 1 15 2 Output Power/Tone (dbm) Preliminary Datasheet: Rev - 9-8-14-7 of 12 - Disclaimer: Subject to change without notice
Application Information V CTRL R 1 C 7 C 1 32 31 3 29 28 27 26 25 C 2 R 2 C 8 V + RF OUT RF IN 33 9 1 11 12 13 14 15 16 C 6 R 6 V G C 12 Bias-up Procedure 1. Set ID limit to 15 ma, IG limit to 1 ma 2. Apply -3 V to VG for pinch off 3. Apply desired value to VCTRL 4. Apply +5 V to V + 5. Set VG more positive until IDQ = 1 ma (VG ~ -1 V Typical) 5. Adjust V + to +1.4V, resulting in VD = 5 V 7. Adjust VG for IDQ = 135 ma 8. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce VG to set IDQ to 1 ma. 3. Set V + to 5 V 4. Reduce VG to -3 V. Ensure IDQ ~ ma 5. Turn off VCTRL supply 6. Set V + to V 7. Turn off VG supply Pin Description Pin No. Symbol Description 1-4, 6-13, 15-21, 23-27, 29, 31-32 Gnd Recommend grounding on PCB 5 RFIN Input; matched to 5 Ω; DC blocked 14 VG Gate voltage; bias network is required; see recommended Application Information above. 22 RFOUT Output; matched to 5 Ω; DC blocked 28 V+ Drain voltage; bias network is required; see recommended Application Information above. 3 Gain control voltage; bias network is required; see VCTRL or VG2 recommended Application Information above. 33 Gnd Ground Paddle. Multiple vias should be employed to minimize inductance and thermal resistance. Preliminary Datasheet: Rev - 9-8-14-8 of 12 - Disclaimer: Subject to change without notice
Evaluation Board V + GND V CTRL GND C7 C8 R1 R2 C1 C2 C3 C4 C5 C6 R6 C12 V G GND Bill of Material Reference Des. Value Description Manuf. Part Number C1, C2, C6 1 μf Cap, 42, 5 V, 1%, X7R Various C3, C4, C5 Ohms Res, 42, 5% (Required for above EVB design) Various C7, C8, C12 2.2 μf Res, 126, 5 V, 1%, X7R Various R1, R2, R6 15 Ohms Res, 42, 5 V, 5% Various Preliminary Datasheet: Rev - 9-8-14-9 of 12 - Disclaimer: Subject to change without notice
Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Aluminum Nitride All metalized features are Au plated Part is mold encapsulated Marking: 353: Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Preliminary Datasheet: Rev - 9-8-14-1 of 12 - Disclaimer: Subject to change without notice
Recommended Soldering Temperature Profile Preliminary Datasheet: Rev - 9-8-14-11 of 12 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-2 Leadfree solder, 26 C. ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level TBD at TBD C convection reflow The part is rated Moisture Sensitivity Level TBD at TBD C per JEDEC standard IPC/JEDEC J-STD-2. ECCN US Department of Commerce: EAR99 RoHS Compliance This part is compliant with EU 22/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: info-sales@triquint.com Fax: +1.972.994.854 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: Rev - 9-8-14-12 of 12 - Disclaimer: Subject to change without notice