MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

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Transcription:

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code Marking Package Shipment MJD122T4 MJD122-1 MJD127T4 MJD127-1 MJD122 MJD122 MJD127 MJD127 TO-252 (DPAK) TO-251 (IPAK) TO-252 (DPAK) TO-251 (IPAK) Tape & Reel Tube Tape & Reel Tube STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX -1 ) SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) ELECTRICALLY SIMILAR TO TIP122 AND TIP127 TO-251 IPAK (Suffix -1 ) 3 2 1 1 3 TO-252 DPAK (Suffix T4 ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS: GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. R 1 Typ. = 10 KΩ R 2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD122 PNP MJD127 V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C Collector Current 5 A I CM Collector Peak Current (t p < 5 ms) 8 A I B Base Current 0.1 A P tot Total Dissipation at T c = 25 C 20 W T stg Storage Temperature 65 to 150 C T j Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. August 2002 1/8

THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 C/W C/W ELECTRICAL CHARACTERISTICS (T j = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = 100 V 10 µa Current (I E = 0) I CEO Collector Cut-off V CE = 50 V 10 µa Current (I B = 0) I CEX Collector Cut-off V CE = 100 V 10 µa Current (V BE = -1.5 V) V CE = 100 V T j = 125 C 500 µa I EBO Emitter Cut-off Current V EB = 5 V 2 ma (I C = 0) V CEO(sus) * Collector-Emitter I C = 30 ma 100 V Sustaining Voltage (I B = 0) V CE(sat) * V BE(sat) * V BE(on) * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage I C = 4 A I C = 8 A h FE * DC Current Gain I C = 4 A I C = 8 A * Pulsed: Pulse duration = 300 µs, duty cycle 2 %. For PNP types voltage and current values are negative. I B = 16 ma I B = 80 ma I C = 8 A I B = 80 ma 4.5 V I C = 4 A V CE = 4 V 2.8 V V CE = 4 V V CE = 4 V 1000 100 2 4 12000 V V 2/8

Safe Operating Area Derating Curve Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/8

Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Switching Times Resistive Load (NPN type) Switching Times Resistive Load (PNP type) 4/8

Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 5/8

TO-251 (IPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 0.033 B5 0.30 0.012 B6 0.95 0.037 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 0.047 L2 0.80 1.00 0.031 0.039 V1 10 o 10 o P032N_E 6/8

TO-252 (DPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8 o 0 o 0 o P032P_B 7/8

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8