SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description

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Transcription:

SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver for low voltage DC motor General purpose switching applications Description The SGSD100 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-247 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. Figure 1. 3 2 1 TO-247 Internal schematic diagrams Table 1. Device summary Order code Marking Package Packaging SGSD100 SGSD200 SGSD100 SGSD200 TO-247 Tube January 2008 Rev 4 1/10. www.st.com 10

Absolute maximun rating SGSD100 SGSD200 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter alue Unit NPN PNP SGSD100 SGSD200 CBO Collector-emitter voltage (I E = 0) 80 CEO Collector-emitter voltage (I B = 0) 80 I C Collector current 25 A I CM Collector peak current (t P < 5ms) 40 A I B Base current 6 A I BM Base peak current (t P < 5ms) 10 A P TOT Total dissipation at T c 25 C 130 W T stg Storage temperature -65 to 150 C T J Max. operating junction temperature 150 C Note: For PNP type voltage and current values are negative Table 3. Thermal data Symbol Parameter alue Unit R thj-case Thermal resistance junction-case max 0.96 C/W 2/10

SGSD100 SGSD200 Electrical characteristics 2 Electrical characteristics (T case = 25 C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO Collector cut-off current (I E = 0) CE = 80 CE = 80 0.5 1.5 I CE Collector cut-off current ( BE = -0.3) CE = 80 CE = 80 0.1 2 I CEO Collector cut-off current (I B = 0) CE = 60 CE = 60 0.5 1.5 I EBO Emitter cut-off current (I C = 0) EB = 5 2 CEO(sus) Collector-emitter sustaining voltage (I B = 0) I C = 50 80 I C = 5 A I B = 20 0.95 1.2 I C = 5 A I B = 20 0.8 CE(sat) Collector-emitter saturation voltage I C = 10 A I C = 10 A I B = 40 I B = 40 1.2 1.3 1.75 I C = 20 A I B = 80 2 3.5 I C = 20 A I B = 80 2.3 BE(sat) Base-emitter saturation voltage I C = 20 A I C = 20 A I B = 80 I B = 80 2.6 2.5 3.3 BE Base-emitter voltage I C = 10 A CE = 3 I C = 10 A CE = 3 1 1.8 1.6 3 I C = 5 A CE = 3 600 5000 15000 I C = 5 A CE = 3 8000 h FE DC current gain I C = 10 A CE = 3 I C = 10 A CE = 3 500 4000 8000 12000 I C = 20 A CE = 3 300 2000 6000 I C = 20 A CE = 3 2000 I F = 5 A 1.2 I F = 5 A 0.85 F Diode forward voltage I F = 10 A I F = 10 A 1.6 1.4 I F = 20 A 2.3 I F = 20 A 1.3 3/10

Electrical characteristics SGSD100 SGSD200 Symbol Parameter Test conditions Min. Typ. Max. Unit E s/b Second breakdown energy CC = 30 L = 3 mh CC = 30 L = 3 mh 250 250 mj mj I s/b Second breakdown current CE = 25 t = 500 ms 6 A 1. Pulsed : Pulse duration = 300 µs, duty cycle 1.5% Note: For PNP type voltage and current values are negative 4/10

SGSD100 SGSD200 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. DC current gain (NPN type) Figure 4. DC current gain (PNP type) Figure 5. DC current gain (NPN type) Figure 6. DC current gain (PNP type) Figure 7. Collector-emitter saturation voltage (NPN type) 5/10

Electrical characteristics SGSD100 SGSD200 Figure 8. Base-emitter saturation voltage (PNP type) 6/10

SGSD100 SGSD200 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10

Package mechanical data SGSD100 SGSD200 TO-247 Mechanical data Dim. mm. Min. Typ Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øp 3.55 3.65 ør 4.50 5.50 S 5.50 8/10

SGSD100 SGSD200 Revision history 4 Revision history Table 5. Document revision history Date Revision Changes 11-Oct-2003 3 24-Jan-2007 4 Package change from TO-218 to TO-247. 9/10

SGSD100 SGSD200 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics N and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROED IN WRITING BY AN AUTHORIZE REPRESENTATIE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEERE PROPERTY OR ENIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIE GRADE MAY ONLY BE USED IN AUTOMOTIE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10

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