3V NChannel MOFET eneral escription The AO74 uses advanced trench technology to provide excellent R (ON), very low gate charge and operation with gate voltages as low as.5v. This device is suitable for use as a load switch or in PWM applications. Product ummary V 3V I (at V =V).7A R (ON) (at V =V) < 55mΩ R (ON) (at V =4.5V) < 5mΩ R (ON) (at V =.5V) < 85mΩ Top View C7 (OT33) Bottom View Absolute Maximum Ratings unless otherwise noted Parameter ymbol Maximum rainource Voltage 3 ateource Voltage Continuous rain Current T A =7 C Pulsed rain Current C V V I.7.3 I M.35 P Power issipation B W T A =7 C. Junction and torage Temperature Range T J, T T 55 to 5 C ± 5 Units V V A Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 3 3 Maximum JunctiontoAmbient A R θja teadytate 34 45 Maximum JunctiontoLead teadytate 8 3 R θjl Units Rev 5: ec. www.aosmd.com Page of 5
Electrical Characteristics (T J = unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =5µA, V =V 3 V V =3V, V =V I Zero ate Voltage rain Current µa T J =55 C 5 I atebody leakage current V =V, V =±V ± na V (th) ate Threshold Voltage V =V I =5µA.5.5 V I (ON) On state drain current V =V, V =5V 5 A R (ON) tatic rainource OnResistance V =V, I =.7A V =4.5V, I =.5A V =.5V, I =A 45 55 T J = 7 84 5 5 mω 85 mω g F Forward Transconductance V =5V, I =3.A 4 V iode Forward Voltage I =A,V =V.75 V I Maximum Bodyiode Continuous Current.5 A YNAMIC PARAMETER C iss Input Capacitance 85 35 85 pf C oss Output Capacitance V =V, V =5V, f=mhz 5 35 45 pf C rss Reverse Transfer Capacitance 8 5 pf R g ate resistance V =V, V =V, f=mhz.9.8.7 Ω WITCHIN PARAMETER Q g (V) Total ate Charge nc Q g (4.5V) Total ate Charge 4.7 nc V =V, V =5V, I =4A Q gs ate ource Charge.95 nc Q gd ate rain Charge. nc t (on) TurnOn elaytime 3.5 ns t r TurnOn Rise Time V =V, V =5V, R L =3.75Ω,.5 ns t (off) TurnOff elaytime R EN =3Ω 7.5 ns t f TurnOff Fall Time.5 ns t rr Body iode Reverse Recovery Time I F =4A, di/dt=a/µs 8.5 ns Q rr Body iode Reverse Recovery Charge I F =4A, di/dt=a/µs. 3.5 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =.. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The OA curve provides a single pulse rating. mω THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev 5: ec. www.aosmd.com Page of 5
TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 5 V 4.5V 3V.5V 8 V =5V 9 I (A) V =.V I (A) 4 3 3 4 5 V (Volts) Fig : OnRegion Characteristics (Note E).5.5.5 3 V (Volts) Figure : Transfer Characteristics (Note E) 8.8 R (ON) (mω) 7 5 4 V =.5V V =4.5V V =V Normalized OnResistance..4. V =4.5V I =3A V =V 7 I =4A 5 V =.5V I =A 3 4 8 I (A) Figure 3: OnResistance vs. rain Current and ate Voltage (Note E).8 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction 8Temperature (Note E) I =4A.E.E 4.E R (ON) (mω) 8 4 I (A).E.E.E3.E4 4 8 V (Volts) Figure 5: OnResistance vs. ateource Voltage (Note E).E5...4..8.. V (Volts) Figure : Bodyiode Characteristics (Note E) Rev 5: ec. www.aosmd.com Page 3 of 5
TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =5V I =4A 4 35 3 V (Volts) 4 Capacitance (pf) 5 5 5 C oss C iss 4 8 Q g (nc) Figure 7: atecharge Characteristics C rss 5 5 5 3 V (Volts) Figure 8: Capacitance Characteristics. I (Amps).... R (ON) limited T J(Max) =5 C.. V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F) µs µs ms ms s C Power (W)... Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =5 ingle Pulse In descending order =.5,.3,.,.5,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P P T on T on T T Rev 5: ec. www.aosmd.com Page 4 of 5
ate Charge Test Circuit & Waveform Qg VC UT VC Vds V Qgs Qgd Ig Charge V ds R L R esistive witching Test C ircuit & W aveform s V ds R g U T V C 9% % V gs td(on) tr t d(off) t f t on t off iode R ecovery Test C ircuit & W aveform s Vds UT Q rr = Idt Vds L Isd Isd I F di/dt Ig V C Vds I R M t rr Rev 5: ec. www.aosmd.com Page 5 of 5