-6868 UV LED (Dome Type) Featrures: Super High power 1W LED Customize 3 types circuit design: I. 3.5V (1 chip ) II. 6.8V (4 chip) III. 14.V (4 chip) Outline 6.8*6.8*3.7mm ALN substrate with anti-uv glasses Lens Customize peak wavelength from 365~41nm Compatible backside metal pad design Type1. Beam Angle 6 Storage Condition MSL4 3.8V Type2. 7.6V Type3. 15.2V Circuit: Single chip Circuit: 2S2P Circuit: 4S (1 vertical power chip) 4 vertical chip 4 vertical chip Version.9 (Patent Free Chip) 1
Type1. Single Chip imum Rating (Ta : 25) Characteristics Symbol DC Forward Current1 IF Pulse Forward Current2 IPF Forward Voltage VF Reverse Voltage VR Leakage Current (5V) UV Junction Temperature3 Tj Storage Temperature Range Tstg Soldering Temperature Tsol 26 Rth 2. /W 2θ1/2 6 Deg 8 KV Thermal Resistance Junction / Solder Point Viewing Angle. 3. Topr. Unit 1,5 2, ma 2,8 ma 4.4 V 3.6-5 V 1 85-4 Electrostatic Discharge (HBM) ESD Operating Temperature Range Typical -4 μa 1 +8 Type2. 2S2P Circuit Design imum Rating (Ta : 25) Characteristics Symbol DC Forward Current1 IF Pulse Forward Current2 IPF Forward Voltage VF Reverse Voltage Leakage Current (5V) Junction Temperature3. 6. VR Typical. Unit 1, 1,4 ma 2, ma 8.4 V 7.2-1 UV V 1 Tj 85 Tstg Soldering Temperature Tsol 26 Rth 2. /W Viewing Angle 2θ1/2 6 Deg Electrostatic Discharge (HBM) ESD 8 KV Operating Temperature Range Topr Solder Point -4 Storage Temperature Range Thermal Resistance Junction / -4 μa 1 +8 Version.9 (Patent Free Chip) 2
Type3. 4S Circuit Design imum Rating (Ta : 25) Characteristics Symbol DC Forward Current1 IF Pulse Forward Current2 IPF Forward Voltage VF Reverse Voltage VR Leakage Current (5V) UV Junction Temperature3 Tj Storage Temperature Range Tstg Soldering Temperature Tsol 26 Rth 2. /W 2θ1/2 6 Deg 8 KV Thermal Resistance Junction / Solder Point Viewing Angle. 12. Topr. Unit 5 1, ma 1,2 ma 16.8 V 14. -2 V 1 μa 85-4 Electrostatic Discharge (HBM) ESD Operating Temperature Range Typical -4 1 +8 Notes: 1. For other ambient, limited setting of current will depend on de-rating curves. 2. D=.1s duty 1/1. 3. When drive on maximum current, Tj must be kept below 85. 4. Viewing angle (2θ1/2) ± 1. Version.9 (Patent Free Chip) 3
Type.1 Single Chip Product Spec Radiometric Power (mw) UV Peak Wavelength @1mA Color Forward Voltage Group P19 19 2 P2 2 21 P21 21 22 P22 22 23 P26 26 27 P27 27 28 P28 28 29 P29 29 3 P26 26 27 (nm@1ma ) 28 29 P29 29 3 P26 26 27 P27 27 28 P28 28 29 P29 29 3 Part Number 365-37 3.2 4.2 6868C3651K2 38-39 3.2 4.2 6868C3851K2 3.2 4.2 6868C3951K2 3.2 4.2 6868C451K2 P27 27 28 39-4 P28 (V@1mA ) 4-41 Notes : 1. Tolerance of Forward voltage (VF ) ±.2V 2. Tolerance of Radiometric Power (Po) ±1% 3. Tolerance of Wavelength ±2nm Version.9 (Patent Free Chip) 4
Type.2 Circuit 2S2P Product Spec Radiometric Power (mw) Color @1,4mA Bin UV Peak Wavelength P35 3, 3,5 P4 3,5 4, P45 4, 4,5 P5 4,5 5, P5 4,5 5, P55 5, 5,5 P6 5,5 6, P65 6, 6,5 P5 4,5 5, code Forward Voltage (nm@1,4ma) 5,5 6, P65 6, 6,5 P5 4,5 5, P55 5, 5,5 P6 5,5 6, P65 6, 6,5 Part Number 365-37 6. 8.4 68SPC3651H2 38-39 6. 8.4 68SPC3851H2 39-4 6. 8.4 68SPC3951H2 4-41 6. 8.4 68SPC451H2 P55 5, 5,5 P6 (V@1,4mA) Notes : 1. Tolerance of Forward voltage (VF ) ±.5V 2. Tolerance of Radiometric Power (Po) ±1% 3. Tolerance of Wavelength ±2nm Version.9 (Patent Free Chip) 5
Type.3 4S Circuit Product Spec Radiometric Power (mw) Color @7mA Bin UV Peak Wavelength P35 3, 3,5 P4 3,5 4, P45 4, 4,5 P5 4,5 5, P5 4,5 5, P55 5, 5,5 P6 5,5 6, P65 6, 6,5 P5 4,5 5, code Forward Voltage (nm@7ma) 5,5 6, P65 6, 6,5 P5 4,5 5, P55 5, 5,5 P6 5,5 6, P65 6, 6,5 Part Number 365-37 12.8 16.8 684SC3651F2 38-39 12. 16.8 684SC3851F2 39-4 12. 16.8 684SC3951F2 4-41 12. 16.8 684SC451F2 P55 5, 5,5 P6 (V@7mA) Notes : 1. Tolerance of Forward voltage (VF ) ±.8V 2. Tolerance of Radiometric Power (Po) ±1% 3. Tolerance of Wavelength ±2nm Version.9 (Patent Free Chip) 6
Type1. Forward Voltage Binning Forward Foltage Voltage Peak Wavelength @1mA Item Bin A 3. 3.4 A1 3.4 3.8 A2 3.8 4.2 (nm@1ma) 365-41 Forward Voltage (V@1mA) 3. 4.2 Type2. 2S2P Voltage Binning Forward Foltage Peak Wavelength @1,4mA Item (nm@1,4ma) Bin Voltage B 6. 6.8 B1 6.8 7.6 B2 7.6 8.4 365-41 Forward Voltage (V@1,4mA) 6. 8.4 Type3. 4S Voltage Binning Forward Foltage Item Voltage Peak Wavelength @7mA Bin C 12. 12.8 C1 12.8 13.6 C2 13.6 14.4 C3 14.4 15.2 C4 15.2 16. C5 16. 16.8 (nm@7ma) 365-41 Forward Voltage (V@7mA) 12.8 16.8 Version.9 (Patent Free Chip) 7
Relative spectral power distribution Version.9 (Patent Free Chip) 8
Characteristics Single Chip Relative Radiant Flux VS. Forward Current Forward Current VS. Forward Voltage 15 Relative Power Intensity(%) Forward Current IF (ma) 16 13 11 385/395/45nm 9 365nm 7 5 1. 2. 3. 4. 14 12 1 8 6 4 2 5 7 9 11 13 15 5. Forward Current IF (ma) Forward Voltage(VF) -Volts Type.2 2S2P Forward Current VS. Forward Voltage Relative Radiant Flux VS. Forward Current 15 13 11 9 7 5 385/395/45nm 365nm 2. 4. 6. 8. Relative Power Intensity(%) Forward Current IF (ma) 16 14 12 1 8 6 4 2 9 11 13 15 17 19 1. Forward Voltage(VF) -Volts Forward Current IF (ma) Version.9 (Patent Free Chip) 9
Type.3 4S Forward Current VS. Forward Voltage Relative Radiant Flux VS. Forward Current 12 1 8 385/395/45nm 6 365nm 4 2 4 8 12 16 Relative Power Intensity(%) Forward Current IF (ma) 16 14 12 1 8 6 4 2 2 4 6 8 1 12 2 Forward Current IF (ma) Forward Voltage(VF) -Volts Forward Current VS. Ambient Temperature Radiant Power VS. Ambient Temperature Relative Power Intensity(%) Forward Current IF (ma) 12 1 3939UV 2 4 6 1 8 Ambient Temperature ( C) 1 8 3939UV 6 4 2 4 6 8 1 Ambient Temperature ( C) Version.9 (Patent Free Chip) 1
Type1 Dimensions & Circuit LED Bottom View Type 1 LED Top View LED Side View Cathode Side Mark (-) Anode Mark (+) LED Bottom View Type 2 Circuit 1 5 2 6 3 7 4 8 Anode Side Mark (+) Type 2&3 Dimensions & Circuit LED Bottom View LED Top View 1 5 2 6 3 7 4 8 Cathode Mark (-) Type 2 Circuit Cathode Mark (-) Type 3 Circuit Notes: All dimensions are in millimeters. LED Side View Tolerance is ±.13mm unless other specified. Version.9 (Patent Free Chip) 11
Typical Spatial Distribution Thermal Design for De-rating The maximum forward current is determined by the thermal resistance between the LED junctions and ambient. It is crucial for the end product to be designed in a manner that minimizes the thermal resistance from the solder point to ambient in order to optimize lamp life and optical characteristics. Version.9 (Patent Free Chip) 12
Suggest Stencil Pattern RECOMMENDED STENCIL PATTERN (HATCHED AREA IS OPENING) RECOMMENDED PCB SOLDER PAD Suggest stencil t =.12 mm All dimensions are in millimeters. Tolerance is ±.13mm unless other specified. Version.9 (Patent Free Chip) 13
Packing D Anode Mark Label Label 4 inside box in an outside box 4 Case in inside box Item Dimension Tolerance Unit A 7.35.1 mm B 7.25.1 mm C.33.2 mm D 4.35.1 mm Notes: 1. Each Reel (minimum 1 pcs and maximum 35 pcs) is packed in a moisture-proof bag along with 2 packs of desiccant and a humidity indicator card; 2. A maximum of 5 moisture-proof bags are packed in an inner box (size: 24mm x 2mm x 15mm ±5mm). 3. A maximum of 4 inner boxes are put in an outer box (size: 41mm x 255mm x 23mm ±5mm). 4. Part No., Lot No., quantity should be indicated on the label of the moisture-proof bag and the cardboard box. Version.9 (Patent Free Chip) 14
Reflow Profile Lead Free solder Lead solder 3 temperature 1-5/sec 24 max 25 Pre heating 15-18 2 1sec. max 21 max 2-5/sec 2-5/sec 15 12sec. 5sec.max 1 5 25 5 1 Time 15 2 25 3 sec Notes: 1. The recommended reflow temperature is 24(±5). The maximum soldering temperature should be limited to 26. 2. Do not stress the silicone resin while it is exposed to high temperature. 3. The number of reflow process should not exceed 3 times. Version.9 (Patent Free Chip) 15
Test Items and Results of Reliability Test Item Test Conditions Duration/ Number of Cycle Damage 1 cycles /22 1 hrs /22 1 hrs /22 Reference 4 3min Thermal Shock 5min AECQ11 125 3min High Temperature Storage Humidity Heat Storage Ta=1 Ta=85 RH=85% Low Temperature Ta=-4 1 hrs Storage Life Test Ta=25 /22 1 hrs /22 1 hrs /22 Ta=85 1 hrs /22 ESD(HBM) 2KV at 1.5kΩ;1pf 3 Times /22 Item Symbol Condition Forward Voltage VF Reverse Current Luminous Intensity If=1,mA High Humidity Heat Life 85 RH=85% Test If=1,mA High Temperature Life Test Criteria for Judging the Damage EIAJ ED-471 2 21 EIAJ ED-471 1 13 EIAJ ED-471 2 22 Tested with UVTstandard Tested with UVTstandard Tested with UVTstandard MIL-STD-883 Criteria for Judgment If=1,mA _ USL 1 1.1 UV VR =5V _ 1μA Iv If=1,mA LSL 2.7 _ Notes: 1. USL: Upper specification level 2. LSL: Lower specification level Version.9 (Patent Free Chip) 16