Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from to 6 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Features Frequency: to 6 MHz P1dB: 16 dbm @ 9 MHz Small-Signal Gain: 19 db @ 9 MHz Third Order Output Intercept Point: 3 dbm @ 9 MHz Single 5 Volt Supply Internally Matched to 5 Ohms Low Cost SOT- 89 Surface Mount Package RoHS Compliant In Tape and Reel. T1 Suffix = 1 Units per 12 mm, 7 inch Reel. Document Number: Rev. 5, 3/28-6 MHz, 19 db 16 dbm InGaP HBT 1 2 3 CASE 1514-2, STYLE 1 SOT-89 PLASTIC Table 1. Typical Performance (1) Characteristic Symbol 9 MHz Small-Signal Gain (S21) Input Return Loss (S11) 214 MHz 35 MHz Unit G p 19 16.5 14 db IRL -14-21 -21 db Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage V CC 7 V Supply Current I CC 25 ma RF Input Power P in 1 dbm Storage Temperature Range T stg -65 to +15 C Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point ORL -2-17 -25 db P1db 16 15.5 16 dbm IP3 3 29 28.5 dbm Junction Temperature (2) T J 15 C 2. For reliable operation, the junction temperature should not exceed 15 C. 1., T C = 25 C, 5 ohm system Table 3. Thermal Characteristics (,, T C = 25 C) Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case R θjc 77 C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955., Inc., 25-28. All rights reserved. 1
Table 4. Electrical Characteristics (, 9 MHz, T C = 25 C, 5 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small-Signal Gain (S21) G p 18 19 db Input Return Loss (S11) IRL -14 db Output Return Loss (S22) ORL -2 db Power Output @ 1dB Compression P1dB 16 dbm Third Order Output Intercept Point IP3 3 dbm Noise Figure NF 3.8 db Supply Current (1) I CC 39 47 55 ma Supply Voltage (1) V CC 5 V 1. For reliable operation, the junction temperature should not exceed 15 C. 2
Table 5. Functional Pin Description Pin Number Pin Function 2 1 RF in 2 Ground 3 RF out /DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22-A114) 1A (Minimum) Machine Model (per EIA/JESD 22-A115) A (Minimum) Charge Device Model (per JESD 22-C11) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-2 1 26 C 3
5 OHM TYPICAL CHARACTERISTICS 25 G p, SMALL SIGNAL GAIN (db) 2 15 1 T C = 85 C -4 C 25 C 1 2 3 4 f, FREQUENCY (GHz) S11, S22 (db) 1 2 3 4 S22 S11 1 2 3 f, FREQUENCY (GHz) 4 Figure 2. Small- Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 23 2 G p, SMALL SIGNAL GAIN (db) 21 19 17 15 13 11 9 8 9 MHz 196 MHz 26 MHz 35 MHz 214 MHz P1dB, 1 db COMPRESSION POINT (dbm) 13 9 1 11 12 13 14 15 16.5 1 1.5 2 2.5 3 3.5 P out, OUTPUT POWER (dbm) f, FREQUENCY (GHz) Figure 4. Small- Signal Gain versus Output Figure 5. P1dB versus Frequency Power 19 18 17 16 15 14 I CC, COLLECTOR CURRENT (ma) 1 8 6 4 2 4 18 4.2 4.4 4.6 4.8 5 5.2 5.4 1 2 3 4 V CC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 33 3 27 24 21 1 MHz Tone Spacing Figure 7. Third Order Output Intercept Point versus Frequency 4
5 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 36 33 3 27 24 f = 9 MHz 1 MHz Tone Spacing 21 4.9 4.95 5 5.5 5.1 V CC, COLLECTOR VOLTAGE (V) Figure 8. Third Order Output Intercept Point versus Collector Voltage IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) 32 31 3 29 28 27 26 f = 9 MHz 1 MHz Tone Spacing 25 4 2 2 4 6 8 1 T, TEMPERATURE ( C) Figure 9. Third Order Output Intercept Point versus Case Temperature 3 1 6 IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) 4 5 6 7 f = 9 MHz 1 MHz Tone Spacing 8 3 1 5 9 13 P out, OUTPUT POWER (dbm) Figure 1. Third Order Intermodulation versus Output Power MTTF (YEARS) 1 5 1 4 1 3 12 125 13 135 14 145 15 T J, JUNCTION TEMPERATURE ( C) NOTE: The MTTF is calculated with, Figure 11. MTTF versus Junction Temperature NF, NOISE FIGURE (db) 8 6 4 2 1 2 3 4 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 2 3 4 5 6 7 2 f = 214 MHz Single Carrier W CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 db @.1% Probability (CCDF) 2 4 6 8 1 12 f, FREQUENCY (GHz) Figure 12. Noise Figure versus Frequency P out, OUTPUT POWER (dbm) Figure 13. Single- Carrier W- CDMA Adjacent Channel Power Ratio versus Output Power 5
5 OHM APPLICATION CIRCUIT: 4-3 MHz V SUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 DUT Z3 Z4 Z5 RF OUTPUT C1 V CC C2 Z1, Z5.347 x.58 Microstrip Z2.575 x.58 Microstrip Z3.172 x.58 Microstrip Z4.43 x.58 Microstrip PCB Getek Grade ML2C,.31, ε r = 4.1 Figure 14. 5 Ohm Test Circuit Schematic 3 S21, S11, S22 (db) 2 1 1 2 S21 S22 C1 R1 L1 C4 C3 C2 3 4 1 S11 2 3 4 5 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure 16. 5 Ohm Test Circuit Component Layout Table 8. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3.1 μf Chip Capacitors C63C13J5RAC Kemet C4 1 pf Chip Capacitor C63C12J5RAC Kemet L1 47 nh Chip Inductor BK2125HM471-T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 6
5 OHM APPLICATION CIRCUIT: 3-36 MHz V SUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 DUT Z3 Z4 Z5 RF OUTPUT C1 V CC C2 Z1, Z5.347 x.58 Microstrip Z2.575 x.58 Microstrip Z3.172 x.58 Microstrip Z4.43 x.58 Microstrip PCB Getek Grade ML2C,.31, ε r = 4.1 Figure 17. 5 Ohm Test Circuit Schematic 3 2 S21 R1 S21, S11, S22 (db) 1 1 S22 C1 L1 C4 C3 C2 2 3 S11 3 8 13 18 23 28 33 38 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure 19. 5 Ohm Test Circuit Component Layout Table 9. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pf Chip Capacitors C63C151J5RAC Kemet C3.1 μf Chip Capacitor C63C13J5RAC Kemet C4 1 pf Chip Capacitor C63C12J5RAC Kemet L1 56 nh Chip Inductor HK16856NJ-T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 7
5 OHM TYPICAL CHARACTERISTICS Table 1. Common Emitter S-Parameters (,, T C = 25 C, 5 Ohm System) f S 11 S 21 S 12 S 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ 1.3698 162.744 9.488476 175.169.7218 -.46.661-6.62 15.413 161.759 9.4319 172.714.73936 -.163.7813-11.76 2.4475 159.333 9.37615 169.547.7479-1.111.89562-18.834 25.46352 159.222 9.3483 167.191.744-1.219.9748-25.724 3.4843 155.469 9.29558 164.74.7458-1.237.1124-32.775 35.5 151.8 9.26495 162.138.7444-1.639.1466-36.946 4.499 147.696 9.21219 159.65.7473-1.957.1811-41.977 45.4922 144.11 9.1694 157.234.7499-2.87.11164-46.631 5.4838 141.343 9.1787 154.72.7517-2.464.11391-5.846 55.492 137.521 9.4991 152.326.7536-2.681.11765-55.96 6.4911 134.226 8.98419 149.922.7567-2.89.11998-59.312 65.497 13.851 8.91939 147.525.7584-3.227.12163-63.354 7.586 127.93 8.8599 145.21.7618-3.577.12411-67.411 75.5247 124.848 8.7868 142.838.7642-3.81.12586-71.332 8.5441 122.43 8.7765 14.522.7659-4.138.12711-75.244 85.5624 12.786 8.63598 138.198.772-4.463.12825-79.297 9.5818 118.791 8.5575 135.918.774-4.812.12922-83.181 95.654 117.37 8.47718 133.677.7767-5.244.13-87.373 1.6284 115.852 8.4286 131.466.786-5.558.1377-91.474 15.6676 114.63 8.3195 129.243.7848-5.948.13124-95.143 11.6962 113.845 8.2335 127.45.7874-6.3.13158-99.674 115.7142 114.19 8.14799 124.84.7912-6.731.13134-14.11 12.7473 113.644 8.5859 122.666.7962-7.194.13136-18.44 125.7822 113.329 7.97269 12.536.7992-7.652.13147-112.847 13.8137 113.158 7.8942 118.443.835-8.15.1318-117.291 135.851 112.83 7.8455 116.374.877-8.476.13257-121.89 14.85621 112.341 7.71693 114.349.8135-8.943.13274-126.4 145.8691 112.53 7.62844 112.31.8168-9.492.13129-13.945 15.87447 112.516 7.55444 11.29.8226-9.966.127178-132.429 155.88958 11.72 7.46781 18.325.8275-1.65.125783-135.873 16.88598 18.771 7.39276 16.371.8326-11.86.12282-139.82 165.89575 17.354 7.319 14.46.8366-11.654.1228-142.9 17.971 15.666 7.2314 12.488.841-12.158.1238-146.866 175.938 14.11 7.1566 1.592.8459-12.724.12424-15.85 18.97 12.621 7.7137 98.688.851-13.319.12564-154.586 185.194 11.285 6.98725 96.791.8555-13.926.12718-158.448 19.1562 99.475 6.9714 94.976.867-14.57.12895-162.5 195.1927 97.823 6.83262 93.117.865-15.154.13127-166.7 2.11424 96.4 6.75439 91.288.8691-15.771.13415-169.355 25.11811 94.531 6.67977 89.43.8733-16.325.1376-172.886 21.12221 93.16 6.6249 87.648.8781-17.24.1495-175.782 215.12585 91.879 6.5355 85.88.884-17.685.14488-179.155 22.13197 9.391 6.44752 84.16.8868-18.268.14844 178.18 225.13625 88.624 6.37451 82.389.8924-18.993.15223 175.153 (continued) 8
5 OHM TYPICAL CHARACTERISTICS Table 1. Common Emitter S-Parameters (,, T C = 25 C, 5 Ohm System) (continued) f S 11 S 21 S 12 S 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ 23.14158 86.951 6.3389 8.681.8971-19.632.15572 172.537 235.1466 85.398 6.23166 78.989.97-2.321.15962 17.114 24.1565 83.971 6.16179 77.288.953-2.98.16279 167.517 245.15511 82.457 6.9153 75.581.988-21.711.16641 165.72 25.15948 8.991 6.2115 73.96.9142-22.394.16996 162.826 255.16385 79.722 5.95767 72.273.9177-23.24.17342 16.459 26.16854 78.35 5.89249 7.612.9216-23.72.17676 157.989 265.17283 76.864 5.82721 68.994.9255-24.56.17953 155.564 27.17698 75.562 5.76221 67.358.9293-25.194.18268 153.165 275.18126 74.328 5.7193 65.748.9333-25.926.18543 15.629 28.1858 72.976 5.6462 64.155.9391-26.671.18837 148.259 285.18957 71.773 5.5814 62.533.9428-27.42.1987 145.593 29.1943 7.699 5.52616 6.973.9472-28.23.19395 143.44 295.19798 69.575 5.46422 59.362.9518-28.947.19629 14.485 3.2132 68.53 5.41159 57.778.9558-29.733.19941 137.461 35.2676 67.445 5.3632 56.228.9592-3.462.2221 135.11 31.2159 66.347 5.3349 54.654.9653-31.263.2477 132.383 315.21388 65.517 5.25234 53.14.9687-32.35.2796 129.58 32.21774 64.628 5.2188 51.53.9729-32.944.2183 126.913 325.22229 63.76 5.1523 49.962.9771-33.72.21442 124.314 33.22492 62.653 5.114 48.396.9812-34.531.21656 121.289 335.2287 61.882 5.518 46.866.9855-35.414.221 118.535 34.23228 6.924 5.22 45.297.99-36.284.2241 115.888 345.2365 6.161 4.95117 43.756.9926-37.17.22826 113.148 35.2439 59.326 4.9461 42.216.9948-38.46.23275 11.547 355.2441 58.457 4.85739 4.692.9979-38.943.23669 17.983 36.24834 57.659 4.8824 39.155.18-39.768.24177 15.495 9
1.7 7.62.35 diameter 3.48 5.33 2.49 1.27.58 1.27 2.54.86.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS.381 x.762 MM PITCH. Figure 2. Recommended Mounting Configuration 1
PACKAGE DIMENSIONS 11
12
13
PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN31: General Purpose Amplifier Biasing The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 3 Mar. 27 Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 4 July 27 Replaced Case Outline 1514-1 with 1514-2, Issue D, p. 1, 11-13. Case updated to add missing dimension for Pin 1 and Pin 3. 5 Mar. 28 Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis (ACPR) unit of measure to dbc, p. 5 Corrected S-Parameter table frequency column label to read MHz versus GHz and corrected frequency values from GHz to MHz, p. 8, 9 14
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