Power management (dual transistors) SC8 and SK39 are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) Features ) Power switching circuit in a single package. ) Mounting cost and area can be cut in half.. () (4) (6). (3) () ().6.6.3.. Structure Silicon epitaxial planar transistor.min. ~..7.9 Equivalent circuits ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions (3) () () Tr Tr (4) () (6) Packaging specifications Type Package Marking Code Basic ordering unit (pieces) UMT6 F9 TR 3 Rev.A /
Absolute maximum ratings () Tr Parameter Symbol Collector-base voltage CBO Collector-emitter voltage CEO Emitter-base voltage EBO Collector current Power dissipation Junction temperature Range of storage temperature IC ICP PC Tj Tstg Limits 6 Unit ma. A (TOTAL) to + mw Single pulse PW=ms mw per element must not be exceeded. Each terminal mounted on a recommended land. Tr Parameter Drain-source voltage Gate-source voltage Symbol DSS GSS Limits 3 ± Unit Drain current Continuous ID ma IDP ma Reverse drain Continuous IDR ma current IDRP ma Total power dissipation Channel temperature Range of storage temperature PD Tch Tstg (TOTAL) to + mw PW ms Duty cycle % mw per element must not be exceeded. Each terminal mounted on a recommended land. Electrical characteristics () Tr Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BCEO IC=mA Collector-base breakdown voltage BCBO IC=µA Emitter-base breakdown voltage BEBO 6 IE=µA Collector cut-off current ICBO na CB= Emitter cut-off current IEBO na EB=6 Collector-emitter saturation voltage CE(sat) m IC=mA, IB=mA DC current gain hfe 7 68 CE=, IC=mA Transition frequency ft 3 MHz CE=, IE= ma, f=mhz Collector output capacitance Cob 7. pf CB=, IE=mA, f=mhz Tr Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ± µa GS=±, DS= Drain-source breakdown voltage (BR)DSS 3 ID=µA, GS= Zero gate voltage drain current IDSS. µa DS=3, GS= Gate-threshold voltage GS(th).8. DS=3, ID=µA Static drain-source 8 Ω ID=mA, GS=4 RDS(on) on-state resistance 7 3 Ω ID=mA, GS=. Forward transfer admittance Yfs ms DS=3, ID=mA Input capacitance Ciss 3 pf Output capacitance Coss 9 pf DS=, GS=, f=mhz Reverce transfer capacitance Crss 4 pf Turn-on delay time td(on) ns ID=mA, DD, Rise time tr 3 ns GS=, RL=Ω, Turn-off delay time td(off) 8 ns RGS=Ω Fall time tf 8 ns Rev.A /
Electrical characteristic curves Tr CE= Ta= 4..4.6.8...4 BASE TO EMITTER OLTAGE : BE () DC CURRENT GAIN : hfe Ta= 4 CE= COLLECTOR SATURATION OLTAGE : CE(sat) (m) IC/IB= IC/IB= IC/IB= Fig. Grounded emitter propagation characteristics Fig. DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR SATURATION OLTAGE : CE (sat) (m) IC/IB= 4 Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) BASER SATURATION OLTAGE : BE (sat) (m) Ta= 4 IC/IB= Fig. Base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : ft (MHz) CE= EMITTER CURRENT : IE (ma) Fig.6 Gain bandwidth product vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pf) COLLECTOR OUTPUT CAPACITANCE : Cob (pf). Cob Cib IE=A f=mhz EMITTER TO BASE OLTAGE : EB() Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage TRANSITION FREQUENCY : IC (A).. Single DC ms ms ms... EMITTER CURRENT : CE () Fig.8 Safe operation area Rev.A 3/
Tr m m m m m m DS=3 m m 7 m.m.m 3 4 GATE-SOURCE OLTAGE : GS () GATE THRESHOLD OLTAGE : GS(th) (). DS=3 ID=.mA 7 CHANNEL TEMPERATURE : Tch () 7 GS=4........ Fig.9 Typical transfer characteristics Fig. Gate threshold voltage vs. channel temperature Fig. Static drain-source on-state resistance vs. drain current ( Ι ) 7 GS=......... ID=.A ID=.A 9 8 7 6 4 3 ID=mA ID=mA GS=4 7 GATE-SOURCE OLTAGE : GS () CHANNEL TEMPERATURE : Tch () Fig. Static drain-source on-state resistance vs. drain current ( ΙΙ ) Fig.3 Static drain-source on-state resistance vs. gate-source voltage Fig.4 Static drain-source on-state resistance vs. channel temperature FORWARD TRANSFER ADMITTANCE : Yfs (S)......... Ta= 7 DS=3.......... REERSE DRAIN CURRENT : IDR (A) m m m m m m m m m.m.m 7 GS=. SOURCE-DRAIN OLTAGE : SD () REERSE DRAIN CURRENT : IDR (A) m m m m m m m m m.m.m GS=4. SOURCE-DRAIN OLTAGE : SD () Fig. Forward transfer admittance vs. drain current Fig.6 Reverse drain current vs. source-drain voltage ( Ι ) Fig.7 Reverse drain current vs. source-drain voltage ( ΙΙ ) Rev.A 4/
CAPACITANCE : C (pf) f=mhz GS= Ciss Coss Crss SWITHING TIME : t (ns) tr td(on) td(off) tf DD= GS= RG=Ω.... DRAIN-SOURCE OLTAGE : DS () DRAIN CURRENT : ID (ma) Fig.8 Typical capacitance vs. drain-source voltage Fig.9 Switching characteristics Rev.A /
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System THE AMERICAS / EUROPE / ASIA / JAPAN www.rohm.com Contact us : webmaster@ rohm.co.jp Copyright 8 ROHM CO.,LTD. Saiin Mizosaki-cho, Ukyo-ku, Kyoto 6-88, Japan TEL : +8-7-3- FAX : +8-7-3-7 Appendix-Rev.
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