DATA SHEET PHOTOCOUPLER PS2561-1,-2, PS2561L-1,-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES High isolation voltage BV = 5 Vr.m.s.: standard products BV = 3 7 Vr.m.s.: VDE884 approved products (Option) High collector to emitter voltage (VCEO = 8 V) High current transfer ratio (CTR = 2 % TYP.) High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) UL approved (File No. E72422 (S) ) CSA approved (No. CA 1391) BSI approved (BS415, BS72) No. 7112 SEMKO approved (SS44165) No. 9317144 NEMKO approved (NEK-HD 195S6) No. A2149 DEMKO approved (Section 1, 137) No. 3535 FIMKO approved (E69-89) No. 167265-8 VDE884 approved (Option) APPLICATIONS Power supply Telephone/FAX. FA/OA equipment Programmable logic controller The information in this document is subject to change without notice. Document No. P12989EJ4VDS (4th edition) (Previous No. LC-2225) Date Published August 1997 NS Printed in Japan The mark shows major revised points. 1992
PACKAGE DIMENSIONS (in millimeters) DIP Type PS2561-1 (New Package) PS2561-1 4 3 4 3 4.6 ±.35 5.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 2.8 MIN..65 4.55. ±. to 15 PS2561-2 8 7 6 5.2 3 4 2.8 MIN..65 4.55 2.8 MIN..65 4.55. ±. to 15 PS2561L1-1 4 3 5.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector.16 2.8 MIN..35 4.25. ±. to 15. ±. to 15 Caution New package 1ch only 2
Lead Bending Type PS2561L-1 (New Package) PS2561L-1 4 3 4 3 4.6 ±.35 5.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector.5 to.2.5 to.2.9 ±.25 9.6 ±.4.9 ±.25 9.6 ±.4 PS2561L2-1 PS2561L-2 4 3 8 7 6 5 5.1.2 3 4 1. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector.5 to.2.5 to.2.9 ±.25.16 12..9 ±.25 9.6 ±.4 Caution New package 1ch only 3
ORDERING INFORMATION Part Number Package Safety Standard Approval Application part number *1 PS2561-1 4-pin DIP Standard products PS2561-1 PS2561L-1 4-pin DIP (lead bending surface mount) UL approved CSA approved PS2561L1-1 4-pin DIP (for long distance) BSI approved NEMKO approved PS2561L2-1 4-pin DIP (for long distance surface DEMKO approved SEMKO approved mount) FIMKO approved PS2561-2 8-pin DIP PS2561-2 PS2561L-2 8-pin DIP (lead bending surface mount) PS2561-1-V 4-pin DIP VDE884 approved products (Option) PS2561-1 PS2561L-1-V 4-pin DIP (lead bending surface mount) PS2561L1-1-V 4-pin DIP (for long distance) PS2561L2-1-V 4-pin DIP (for long distance surface mount) PS2561-2-V 8-pin DIP PS2561-2 PS2561L-2-V 8-pin DIP (lead bending surface mount) *1 As applying to Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit PS2561-1, PS2561L-1 PS2561-2, PS2561L-2 Diode Reverse Voltage VR 6 V Forward Current (DC) IF 8 ma Power Dissipation Derating PD/ C 1.5 1.2 mw/ C Power Dissipation PD 1 12 mw/ch Peak Forward Current *1 IFP 1 A Transistor Collector to Emitter Voltage VCEO 8 V Emitter to Collector Voltage VECO 7 V Collector Current IC ma/ch Power Dissipation Derating PC/ C 1.5 1.2 mw/ C Power Dissipation PC 1 12 mw/ch Isolation Voltage *2 BV 5 3 7 *3 Vr.m.s. Operating Ambient Temperature TA 55 to + C Storage Temperature Tstg 55 to +1 C *1 PW = µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 6 % between input and output *3 VDE884 approved products (Option) 4
ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Symbol Conditions MIN. TYP. Unit Diode Forward Voltage VF IF = ma 1.17 1.4 V Reverse Current IR VR = 5 V 5 µa Terminal Capacitance Ct V = V, f = 1. MHz pf Transistor Collector to Emitter Dark Current ICEO VCE = 8 V, IF = ma na Coupled Current Transfer Ratio *1 CTR IF = 5 ma, VCE = 5 V 8 2 4 % Collector Saturation Voltage VCE (sat) IF = ma, IC = 2 ma.3 V Isolation Resistance RI-O VI-O = 1. kv 11 Ω Isolation Capacitance CI-O V = V, f = 1. MHz.5 pf Rise Time *2 tr VCC = V, IC = 2 ma, RL = Ω 3 µs Fall Time *2 tf 5 *1 CTR rank (only PS2561-1, PS2561L-1) *2 Test circuit for switching time L : 2 to 4 (%) M : 8 to 24 (%) D : to 3 (%) H : 8 to 16 (%) W : 13 to 26 (%) Pulse Input PW = µ s Duty Cycle = 1/ IF Ω VCC VOUT RL = Ω 5
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) Diode Power Dissipation PD (mw) 1 DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE PS2561-2 PS2561L-2 PS2561-1 PS2561L-1 1.2 mw/ C 1.5 mw/ C 25 75 125 1 Ambient Temperature TA ( C) Transistor Power Dissipation PC (mw) 1 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE PS2561-2 PS2561L-2 PS2561-1 PS2561L-1 1.2 mw/ C 1.5 mw/ C 25 75 125 1 Ambient Temperature TA ( C) FORWARD CURRENT vs. FORWARD VOLTAGE 7 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Forward Current IF (ma) 5 1.5.1 TA = + C +6 C +25 C C 25 C 55 C Collector Current IC (ma) 6 4 3 2 ma 2 ma ma IF = 5 ma.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 2 4 6 8 Collector to Emitter Dark Current ICEO (na) 1 1 25 Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE VCE = 8 V 4 V 24 V V 5 V 25 Ambient Temperature TA ( C) 75 Collector Current IC (ma) 4 5 1.5.1 Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE.2.4.6.8 ma 2 ma ma 5 ma 2 ma IF = 1 ma Collector Saturation Voltage VCE(sat) (V) 1. 6
Normalized Current Transfer Ratio CTR 1.2,,,,,,, 1.,,,,,,,,,,,,,,,,,,,,.8,,,,,,.6.4.2 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized to 1. at TA = 25 C, IF = 5 ma, VCE = 5 V 25 25 75 Ambient Temperature TA ( C) Current Transfer Ratio CTR (%) 4 4 3 3 2 2 1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT.5.1.5 1 5 Forward Current IF (ma) Switching Time t ( µ s) 1 IC = 2 ma, VCC = V, CTR = 29 % SWITCHING TIME vs. LOAD RESISTANCE tf tr td ts Switching Time t ( µ s) 1 IF = 5 ma, VCC = 5 V, CTR = 29 % SWITCHING TIME vs. LOAD RESISTANCE tf ts tr.1 1 k 5 k k 1 1 k 5 k k td k k Load Resistance RL (Ω) Load Resistance RL (Ω) FREQUENCY RESPONSE LONG TIME CTR DEGRADATION IF = 5 ma, VCE = 5 V 1.2 1. TYP. Normalized Gain GV 5 15 RL = 1 kω Ω CTR (Relative Value).8.6.4 IF = 5 ma TA = 25 C IF = 5 ma TA = 6 C 2.2 3 Ω.5 5 2 2 2 3 4 5 Frequency f (khz) Time (Hr) 7
TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.±.1 4.±.1 1.55±.1 1.75±.1 4.3±.2 7.5±.1 16.±.3.3±.1 1.55±.1 5.6±.1.3 8.±.1 Taping Direction PS2561L-1-E3 PS2561L-1-F3 PS2561L-1-E4 PS2561L-1-F4 Outline and Dimensions (Reel) R 1. 2.±.5 φ13.±.5 φ21.±.8 PS2561L-1-E3, E4: φ 2 PS2561L-1-F3, F4: φ 33 φ 8.±5. 16.4 +2.. Packing: PS2561L-1-E3, E4 1 pcs/reel PS2561L-1-F3, F4 2 pcs/reel 8
Outline and Dimensions (Tape) 2.±.1 4.±.1 1.55±.1 1.75±.1 4.3±.2 7.5±.1 16.±.3.3±.1 1.55±.1.4±.1.3 12.±.1 Taping Direction PS2561L-2-E3 PS2561L-2-E4 Outline and Dimensions (Reel) 2.±.5 φ13.±.5 R 1. φ21.±.8 φ33 φ 8.±5. 16.4 +2.. Packing: 1 pcs/reel 9
RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering Peak reflow temperature 235 C (package surface temperature) Time of temperature higher than 2 C 3 seconds or less Number of reflows Three Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T ( C) 12 to 16 C 6 to 9 s (preheating) (heating) to s to 3 s 235 C (peak temperature) 2 C Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 C or below (2) Dip soldering Temperature Time Number of times Flux 26 C or below (molten solder temperature) seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of.2 Wt % is recommended.)
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE884) Parameter Symbol Speck Unit Application classification (DIN VDE 9) for rated line voltages 3 Vr.m.s. for rated line voltages 6 Vr.m.s. IV III Climatic test class (DIN IEC 68 Teil 1/9.8) 55//21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test procedure a for type test and random test) UIORM Upr 89 1 68 Vpeak Vpeak Upr = 1.2 UIORM, Pd < 5 pc Test voltage (partial discharge test procedure b for random test) Upr = 1.6 UIORM, Pd < 5 pc Upr 1 424 Vpeak Highest permissible overvoltage UTR 6 Vpeak Degree of pollution (DIN VDE 9) 2 Clearance distance > 7. mm Creepage distance > 7. mm Comparative tracking index (DIN IEC 112/VDE 33 part 1) CTI 175 Material group (DIN VDE 9) III a Storage temperature range Tstg 55 to +1 C Operating temperature range TA 55 to + C Isolation resistance, minimum value VIO = V dc at TA = 25 C VIO = V dc at TA at least C Ris MIN. Ris MIN. 12 Ω 11 Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = ) Power (output or total power dissipation) Isolation resistance VIO = V dc at TA = 175 C (Tsi) Tsi Isi Psi Ris MIN. 175 4 7 9 C ma mw Ω 11
CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5