Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3 Pb-free and Halogen-free package AEC-Q11 qualified. Symbol Outline SOT-23 B:Base C:Collector E:Emitter Ordering Information Device Package Shipping -X-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3 pcs / tape & reel, 7 reel Product rank, zero for no rank products Product name
Page No. : 2/7 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO - V Collector-Emitter Voltage VCEO - V Emitter-Base Voltage VEBO -8 V Collector Current IC -1 A Power Dissipation (TA=25 C) PD 225 (Note) mw Power Dissipation (TC=25 C) PD 56 mw Thermal Resistance, Junction to Ambient RθJA 556 (Note) C/W Thermal Resistance, Junction to Case RθJC 223 C/W Junction Temperature Tj 15 C Storage Temperature Tstg -55~+15 C Note : Free air condition Characteristics (Ta=25 C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO - - - V IC=-5μA BVCEO - - - V IC=-2mA BVEBO -8 - - V IE=-5μA ICBO - - - na VCB=-V IEBO - - - na VEB=-7V *VCE(sat) - -.16 -.3 V IC=-5mA, IB=-5mA *RCE(sat) - -.32 -.6 Ω IC=-5mA, IB=-5mA *hfe 12-39 - VCE=-3V, IC=-.1A ft - 2 - MHz VCE=-1V, IC=-5mA, f=mhz Cob - 11 2 pf VCB=-1V, f=1mhz *Pulse Test: Pulse Width 38μs, Duty Cycle 2% Classification Of hfe Rank Q R Range 12~27 18~39 Moisture Sensitivity Level : conform to JEDEC level 1 Recommended Storage Condition: Temperature : 3 C Humidity : 6% RH
Page No. : 3/7 Typical Characteristics.1 IB=5uA.45.4 IB=2.5mA.5 IB=4uA IB=3uA IB=2uA IB=uA.35.3.25.2.15.1 IB=2mA IB=1.5mA IB=1mA IB=5uA IB= 1 2 3 4 5 6.5 IB= 1 2 3 4 5 6.9.8.7.6.5.4.3.2.1 IB=1mA IB=8mA IB=6mA IB=4mA IB=2mA IB= 1 2 3 4 5 6 1.2 1.8.6.4.2 IB=25mA IB=2mA IB=15mA IB=1mA IB=5mA IB= 1 2 3 4 5 6 Current Gain vs Collector Current Saturation Voltage vs Collector Current Current Gain---HFE 1 VCE=2V VCE=1V VCE=3V Saturation Voltage---(mV) VCE(SAT) IC=25IB IC=2IB IC=1IB 1 1 1 1 1 1
Page No. : 4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Capacitance Characteristics Saturation Voltage---(mV) VBE(SAT)@IC=1IB Collector Output Capacitance--- Cob(pF) 1 1 1 1 1 1 Reverse-biased Collector Base Voltage---VCB(V) Cutoff frequency vs Collector Current 25 Power Derating Curve Cutoff Frequency---fT(MHz) VCE=1V Power Dissipation---PD(mW) 2 15 5 1 1 1 5 15 2 Ambient Temperature---TA( )
Page No. : 5/7 Reel Dimension Carrier Tape Dimension
Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 26 +/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3 C/second max. 3 C/second max. Preheat Temperature Min(TS min) Temperature Max(TS max) Time(ts min to ts max) C 15 C 6-12 seconds 15 C 2 C 6-18 seconds Time maintained above: Temperature (TL) Time (tl) 183 C 6-15 seconds 217 C 6-15 seconds Peak Temperature(TP) 24 +/-5 C 26 +/-5 C Time within 5 C of actual peak temperature(tp) 1-3 seconds 2-4 seconds Ramp down rate 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYSt ech Electronics Corp. Page No. : 7/7 SOT-23 Dimension Marking: Product Code Date Code: Year+Month Year: 7 27, 8 28 Month: 1 1, 2 2, 9 9, A 1, B 11, C 12 AK 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical DIM Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Min. Max. Min. Max. A.112.124 2.8 3.4 J.32.79.8.2 B.472.669 1.2 1.7 K.118.266.3.67 C.335.512.89 1.3 L.335.453.85 1.15 D.118.197.3.5 S.83.1161 2.1 2.95 G.669.91 1.7 2.3 V.98.256.25.65 H..4..1 L1.118.197.3.5 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead : Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:ul94v-. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.