General Description The MDP13N5 uses advanced Magnachip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N5 is suitable device for SMPS, HID and general purpose applications. MDP13N5 N-Channel MOSFET 5V, 13.A,.5Ω Features V DS = 5V = 13.A @V GS = V R DS(ON) <.5Ω @V GS = V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 5 V Drain-Source Voltage @ Tjmax V DSS @ T jmax 55 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C=25 o C 13 A T C= o C 8.2 A Pulsed Drain Current (1) M 52 A Power Dissipation T C=25 o C 187 Derate above 25 o C Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 58 mj Junction and Storage Range T J, T stg -55~15 Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc.67 P D 1.49 W W/ o C o C o C/W 1
Ordering Information Part Number Temp. Range Package Packing ROHS status MDP13N5TH -55~15 o C TO-22 Tube Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 25µA, V GS = V 5 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25µA 3. - 5. Drain Cut-Off Current SS V DS = 5V, V GS = V - - 1 µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 6.5A.39.5 Ω Forward Transconductance g fs V DS = 4V, = 6.5A - 13 - S Dynamic Characteristics Total Gate Charge Q g - 33 Gate-Source Charge Q gs V DS = 4V, = 13A, V GS = V (3) -.4 Gate-Drain Charge - 13 Q gd Input Capacitance C iss - 139 Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 6.3 Output Capacitance C oss - 173 Turn-On Delay Time t d(on) - 3.2 Rise Time t r V GS = V, V DS = 25V, = 13A, - 52.8 Turn-Off Delay Time t d(off) R G = 25Ω (3) ns - 6.8 Fall Time t f - 33.8 Drain-Source Body Diode Characteristics Maximum Continuous Drain to I Source Diode Forward Current S - 13 - A Source-Drain Diode Forward V Voltage SD I S = 13A, V GS = V - 1.4 V Body Diode Reverse Recovery t Time rr - 325 ns I F = 13A, dl/dt = A/µs (3) Body Diode Reverse Recovery Q Charge rr - 2.9 µc V nc pf Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature TJ(MAX)=15 C. 3. I SD 9.A, di/dt 2A/us, V DD=5V, R g =25Ω, Starting TJ=25 C 4. L=6.2mH, I AS=13.A, V DD=5V,, R g =25Ω, Starting TJ=25 C 2
,Drain Current [A] 3 25 2 15 5 V gs =5.5V =6.V =6.5V =7.V =8.V =.V 5 15 2 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics Notes 1. 25 μs Pulse Test 2. T C =25 R DS(ON) [Ω ].9.8.7.6.5.4 V GS =.V 5 15 2 25 3 35,Drain Current [A] V GS =2V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.8 1.2 R DS(ON), (Normalized) Drain-Source On-Resistance 1.6 1.4 1.2 1..8 1. V GS = V 2. = 5 A V GS =V V GS =4.5V BV DSS, (Normalized) Drain-Source Breakdown Voltage 1.1 1..9 1. V GS = V 2. = 25 μa.6-5 -25 25 5 75 125 15 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. * Notes ; 1. V DS =3V 1. V GS = V 2. = 25 μa [A] 15 25 R Reverse Drain Current [A] 1 15 25-55 1 4 5 6 7 8 V GS [V] Fig.5 Transfer Characteristics.1..2.4.6.8 1. 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 6 4 2 Note : I = 13.A D 2 4 6 8 12 14 16 18 2 22 24 26 28 3 32 34 36 38 4 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics V 25V 4V Capacitance [pf] 3 28 26 24 22 2 18 16 14 12 8 6 4 2 C oss C iss C rss.1 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. V GS = V 2. f = 1 MHz Fig.8 Capacitance Characteristics 2 µs 14, Drain Current [A] 1-1 -2 Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =25 Fig.9 Maximum Safe Operating Area DC -1 1 2 V DS, Drain-Source Voltage [V] µs 1 ms ms ms, Drain Current [A] 12 8 6 4 2 25 5 75 125 15 T C, Case [ ] Fig. Maximum Drain Current vs. Case Z θ JC (t), Normalized Thermal Response -1 D=.5.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.67 /W -2-5 -4-3 -2-1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Power (W) 24 22 2 18 16 14 12 8 6 4 2 single Pulse R thjc =.67 /W T C = 25 1E-5 1E-4 1E-3.1.1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation 4
Physical Dimension TO22, 3L Dimensions are in millimeters, unless otherwise specified 5
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