CPC1303GRTR. Optocoupler with Single-Transistor Output INTEGRATED CIRCUITS DIVISION. Description. Features. Approvals.

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Optocoupler with Single-Transistor Output Parameter Rating Units Breakdown Voltage - BO 3 V P Current Transfer Ratio 2 % Saturation Voltage.5 V Input Control Current.2 ma Features 5V rms Input/Output Isolation Low Drive Power Requirements High Reliability Arc-Free With No Snubbing Circuits No EMI/RFI Generation Small 4-pin Package Applications Sensor Circuitry Instrumentation Multiplexers Data Acquisition Electronic Switching I/O Subsystems Meters (Watt-Hour, Water, Gas) Medical Equipment: Patient/Equipment Isolation Aerospace Industrial Controls Description The is a unidirectional input optocoupler with a single-transistor output, which uses optically coupled technology to provide an enhanced 5V rms isolation barrier between the input and the output. The optically coupled output is controlled by a highly efficient infrared LED. This optocoupler satisfies the PD output requirements of IXYS Integrated Circuits Division's CPC466 Broadband ADSL/VDSL DC Termination IC. Approvals UL 577 Approved Component: File E7627 EN/IEC 695- Certified Component: TUV Certificate B 3 2 82667 3 Ordering Information Part Number G GR GRTR Pin Configuration A Description 4-Pin DIP (/Tube) 4-Pin Surface Mount, Tubed (/Tube) 4-Pin Surface Mount, Tape & Reel (/Reel) 4 C K 2 3 E DS--R5 www.ixysic.com

Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Breakdown Voltage 3 V P Reverse Input Voltage 5 V Input Control Current 5 ma Peak (ms) A Power Dissipation 2 Input 5 Phototransistor 2 5 mw Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25 C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements.. Isolation Voltage, Input to Output 5 V rms Operating Temperature -4 to +85 C Storage Temperature -4 to +25 C Derate linearly.33 mw / o C 2 Derate linearly 2. mw / o C Electrical Characteristics @ 25ºC Parameters Conditions Symbol Min Typ Max Units Output Characteristics Phototransistor Breakdown Voltage I CEO =µa BO 3 - - V P Phototransistor Output (Dark) Current O =5V, =ma I CEO - 25 5 na Saturation Voltage I C =.4mA, =.2mA -..45 V I CEsat C =ma, =ma -.2.5 V Current Transfer Ratio =.2mA, =.5V CTR 2 25 % Output Capacitance =ma, V=25V, f=mhz C OUT - 6 - pf Input Characteristics Input Control Current I C =.4mA, =.5V - -.2 ma Input Voltage Drop =5mA V F.9.2.4 V Input Reverse Current V R =5V I R - - µa Common Characteristics Capacitance, Input to Output V IO =V, f=mhz C IO - 3 - pf Switching Characteristics @ 25ºC Characteristic Symbol Test Condition Typ Units Turn-On Time t on 2 V CC =5V, =ma, R L =5 s Turn-Off Time t off 8 Switching Time Test Circuit V CC R L Pulse Width=5ms Duty Cycle=% 9% % t on t off 2 www.ixysic.com R5

PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)* LED Forward Current (ma) 5 4 3 2 LED Voltage vs. LED Current (Linear)..2.3.4.5.6 LED Forward Voltage (V) LED Forward Current (ma) LED Voltage vs. LED Current (LOG)...2.3.4.5.6 LED Forward Voltage (V) LED Forward Voltage (V).6.5.4.3 LED Forward Voltage vs. Temperature =5mA =2mA =ma =5mA.2 =2mA. =ma =.2mA. -4-2 2 4 6 8 CTR (%) 2 8 6 4 2 LED Forward Current vs. CTR -4ºC 25ºC 85ºC LED Forward Current ( A) Collector Current (ma) 6 5 4 3 2 Typical Collector Voltage vs. Typical Collector Current =5mA =3mA =2mA =ma =.5mA =.2mA 2 3 4 5 Collector Voltage (V) I CE Current vs. Temperature = A =5 A =2 A = A =5 A =2 A = A =5 A =2 A = A -4 4 8 2 I CE Current ( A) Saturation Voltage (V).6.4.2..8 Saturation Voltage vs. Temperature ( =ma, I CE =2mA).6-4 -2 2 4 6 8 Blocking Voltage (V P ) Typical Blocking Voltage vs. Temperature 96 95 94 93 92 9 9 89 88 87-4 -2 2 4 6 8 Leakage Current (na) Leakage Current vs. Temperature 5 4 Leakage V 3 Leakage 5V Leakage 3V 2-4 -2 2 4 6 8 Turn-On Time ( s).5.4.3.2.. Turn-On Time vs. Load Resistance ( =ma, V CC =5V).9 2 4 6 8 Load Resistance (k ) Turn-Off Time ( s) 35 3 25 2 5 5 Turn-Off Time vs. Load Resistance (V CC =5V, =ma) 2 4 6 8 Load Resistance (k ) *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R5 www.ixysic.com 3

Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-2, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-33. ESD Sensitivity Device Moisture Sensitivity Level (MSL) Rating G MSL GR MSL 3 This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Soldering Profile Provided in the table below is the Classification Temperature (T C ) of this product and the maximum dwell time the body temperature of this device may be above (T C - 5)ºC. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. Additionally, for the GR, the solder reflow profile given in Technical Brief TB-2 "Pb-Free Solder Reflow Profile for Select Devices" must be followed. For the through-hole device, G, and any other processes, the guidelines of J-STD-2 must be observed. Board Wash Device Maximum Body Temperature (T c ) Time GR 25ºC 5 seconds IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include, but are not limited to: using a low pressure wash and providing a follow-up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device, and should not be used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based. 4 www.ixysic.com R5

MECHANICAL DIMENSIONS G.99 (.39) 3.3 ±.5 (.3 ±.2).254 (.) PC Board Pattern (Top View) 6 -.8 DIA. (6 -.3 DIA.) 2.54 ±.27 (. ±.5) 6.35 ±.27 (.25 ±.5) 7.62 ±.27 (.3 ±.5) 4.572 ±.27 (.8 ±.5) 9º (ALL).457 ±.76 (.8 ±.3) 2.54 ±.27 (. ±.5) PIN 2.59 (.85).58 (.2) 3.75 (.25) 9º (ALL) 9.44 ±.58 (.36 ±.2) 7.62 ±.25 (.3 ±.) 6.35 ±.27 (.25 ±.5) Dimensions mm (inches) GR 2.54 ±.27 (. ±.5) 3.3 ±.5 (.3 ±.2) PCB Land Pattern.635 ±.254 (.25 ±.) 2.287 (.9) 6.35 ±.27 (.25 ±.5) 9.525 (.375) 7.62 ±.254 (.3 ±.) 8.8 (.346) 9º ± º (ALL) PIN #.99 (.39) 4.572 ±.27 (.8 ±.5).254 (.) 3.48 ±.76 (.37 ±.3).6 (.63).95 (.37) 2.54 ±.27 (. ±.5) 2.287 ±.27 (.9 ±.5).2 min /.254 max (.4 min /. max) Dimensions mm (inches) R5 www.ixysic.com 5

GRTR Tape & Reel 33.2 Dia (3. Dia) B =5. Top Cover (.97) Tape Thickness.2 Max (.4 Max) K =4.2 (.65) K =3.7 (.46) A =. (.394) P=2. (.472) W=6.±.3 (.63±.2) Embossed Carrier Embossment Dimensions mm (inches) NOTES:. All dimensions meet EIA-48-C requirements 2. Unless otherwise noted, tolerances = ±. (.4) For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 6 Specification: DS--R5 Copyright 26, IXYS Integrated Circuits Division All rights reserved. Printed in USA. /7/26

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