Hyperfast Rectifier, 6 A FRED Pt

Similar documents
Hyperfast Rectifier, 4 A FRED Pt

Hyper Fast Rectifier, 2 x 4 A FRED Pt

Hyperfast Rectifier, 2 x 3 A FRED Pt

Hyper Fast Rectifier, 2 x 2 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 3 A FRED Pt

Hyperfast Rectifier, 2 x 5 A FRED Pt

Hyperfast Rectifier, 2 A FRED Pt

Hyperfast Rectifier, 2 A FRED Pt

Hyperfast Rectifier, 16 A FRED Pt

Ultrafast Rectifier, 16 A FRED Pt

Ultrafast Rectifier, 2 x 8 A FRED Pt

Hyper Fast Rectifier, 2 x 3 A FRED Pt

Hyper Fast Rectifier, 2 x 4 A FRED Pt

Hyperfast Rectifier, 5 A FRED Pt

Ultrafast Rectifier, 1 A FRED Pt

Ultrafast Rectifier, 4 A FRED Pt

Hyper Fast Rectifier, 2 x 3 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt

Ultrafast Rectifier, 2 x 30 A FRED Pt

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Rectifier, 20 A FRED Pt

VS-EBU15006-F4. FRED Pt Ultrafast Soft Recovery Diode, 150 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

Ultrafast Soft Recovery Diode, 150 A FRED Pt

Ultrafast Rectifier, 20 A FRED Pt

Insulated Ultrafast Rectifier Module, 230 A

Insulated Ultrafast Rectifier Module, 280 A

High Performance Schottky Rectifier, 3.0 A

Insulated Ultrafast Rectifier Module, 280 A

High Performance Schottky Rectifier, 3 A

Insulated Ultrafast Rectifier Module, 210 A

High Performance Schottky Rectifier, 3.5 A

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A

Insulated Ultrafast Rectifier Module, 210 A

High Performance Schottky Rectifier, 3.0 A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Schottky Rectifier, 2 A

Insulated Hyperfast Rectifier Module, 280 A

High Current Density Surface Mount Ultrafast Rectifiers

Hyperfast Rectifier, 15 A FRED Pt TM

Schottky Rectifier, 1 A

Ultrafast Avalanche Surface Mount Rectifiers

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A

High Current Density Surface Mount Schottky Barrier Rectifiers

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Hyperfast Rectifier, 8 A FRED Pt TM

High Performance Schottky Rectifier, 1.5 A

Insulated Gen 2 Schottky Rectifier Module, 300 A

Fast Switching Avalanche Surface Mount Rectifiers

HEXFRED Ultrafast Soft Recovery Diode, 220 A

HEXFRED Ultrafast Soft Recovery Diode, 275 A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Schottky Barrier Rectifiers

High Current Density Surface Mount High Voltage Schottky Rectifier

High Performance Schottky Rectifier, 1 A

Schottky Rectifier, 2 A

SMD Photovoltaic Solar Cell Protection Rectifier

Glass Passivated Ultrafast Plastic Rectifier

High Current Density Surface Mount Dual Common Cathode Schottky Rectifier

Insulated Ultrafast Rectifier Module, 120 A

FRED Pt Gen 4 Single Ultrafast Diode, 500 A (INT-A-PAK Power Modules)

Hyperfast Rectifier, 30 A FRED Pt

HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)

Hyperfast Rectifier, 15 A FRED Pt TM

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

HEXFRED Ultrafast Soft Recovery Diode, 140 A

Insulated Ultrafast Rectifier Module, 200 A

High Current Density Surface Mount High Voltage Schottky Rectifiers

Ultrafast Avalanche Surface Mount Rectifiers

Excellent Integrated System Limited

Small Signal Switching Diode, Dual

Surface Mount Ultrafast Plastic Rectifier

HEXFRED Ultra Fast Soft Recovery Diode, 210 A

HEXFRED Ultrafast Soft Recovery Diode, 240 A

Surface Mount Ultrafast Plastic Rectifier

High Voltage Ultrafast Avalanche SMD Rectifiers

Surface Mount Standard Rectifiers

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

Ultrafast Avalanche SMD Rectifier

Surface Mount Ultrafast Plastic Rectifier

Schottky Rectifier, 5.5 A

FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Schottky Barrier Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

High Voltage, Input Rectifier Diode, 20 A

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

Small Signal Fast Switching Diode

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

Surface-Mount Glass Passivated Rectifier

High Voltage Surface Mountable Input Rectifier Diode, 8 A

HEXFRED Ultrafast Soft Recovery Diode, 167 A

Transcription:

Hyperfast Rectifier, 6 A FRED Pt K SMPC (TO-277A) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified for output and snubber operation Low forward voltage drop Low leakage current Meets MSL level, per J-STD-2, LF maximum peak of 26 C AEC-Q qualified, meets JESD 2 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRIMARY CHARACTERISTICS I F(AV) 6 A V R 2 V V F at I F.74 V t rr (typ.) 28 ns T J max. 75 C Package SMPC (TO-277A) Circuit configuration Single DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 2 V Average rectified forward current I F(AV) T Sp = 6 C 6 Non-repetitive peak surge current I FSM T J = 25 C 5 A Operating junction and storage temperatures T J, T Stg -55 to +75 C ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μa 2 - - I F = 6 A -.87.94 Forward voltage V F I F = 6 A, T J = 25 C -.74.8 V R = V R rated - - 2 Reverse leakage current I R μa T J = 25 C, V R = V R rated - 3 5 Junction capacitance C T V R = 2 V - 33 - pf V Revision: 6-Jul-7 Document Number: 94983 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

DYNAMIC RECOVERY CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS I F =. A, di F /dt = 5 A/μs, V R = 3 V - 28 - Reverse recovery time t rr I F =.5 A, I R = A, I rr =.25 A - - 25 T J = 25 C - 22 - ns T J = 25 C - 33 - Peak recovery current I RRM T J = 25 C I F = 6 A - 2.4 - di F /dt = 2 A/μs T J = 25 C V R = 6 V - 5. - A T J = 25 C - 27 - Reverse recovery charge Q rr T J = 25 C - 8 - nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg -55-75 C Thermal resistance, junction to solder pad R thj-sp - 2.2 3 Thermal resistance, junction to ambient R thja - 85 - C/W Approximate weight. g.35 oz. Marking device Case style SMPC (TO-277A) NEH2 I F - Instantaneous Forward Current (A) T J = 75 C T J = 5 C T J = 25 C T J = 25 C..2.4.6.8..2.4 I R - Reverse Current (μa) 75 C 5 C 25 C 25 C... 5 5 2 V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 6-Jul-7 2 Document Number: 94983 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

www.vishay.com C T - Junction Capacitance (pf) Average Power Loss (W) 7 6 5 4 3 2 RMS limit D =.2 D =.5 D =. D =.2 D =.5 DC 5 5 2 2 4 6 8 V R - Reverse Voltage (V) I F(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 8 45 Allowable Case Temperature ( C) 75 7 65 6 55 Square wave (D =.5) 8 % rated V R applied See note () DC 2 3 4 5 6 7 t rr (ns) 4 35 3 25 C 25 2 5 25 C 5 I F = 6 A I F(AV) - Average Forward Current (A) di F /dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. di F /dt 4 2 25 C Q rr (nc) 8 6 4 25 C 2 I F = 6 A di F /dt (A/μs) Fig. 7 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 5); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R Revision: 6-Jul-7 3 Document Number: 94983 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Z thjc - Thermal Impedance ( C/W) Typical, junction to case. Single pulse Steady state value (DC)...... t - Rectangular Pulse Duration (s) Fig. 8 - Transient Thermal Impedance, Junction to Case Z thja - Thermal Impedance ( C/W) Typical, junction to ambient. Single pulse Steady state value (DC)...... t - Rectangular Pulse Duration (s) Fig. 9 - Transient Thermal Impedance, Junction to Ambient (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. Q rr = t rr x I RRM 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 6-Jul-7 4 Document Number: 94983 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

ORDERING INFORMATION TABLE Device code VS- 6 E S H 2 H M3 2 3 4 5 6 7 8 - product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: E = single diode 4 - S = SMPC package 5 - Process type, H = hyperfast recovery 6 - Voltage code (2 = 2 V) 7 - H = AEC-Q qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION /86A 5 5 7" diameter plastic tape and reel /87A 65 65 3" diameter plastic tape and reel Dimensions Part marking information Packaging information SPICE model LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9557 www.vishay.com/doc?95565 www.vishay.com/doc?88869 www.vishay.com/doc?96 Revision: 6-Jul-7 5 Document Number: 94983 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Outline Dimensions TO-277A (SMPC) DIMENSIONS in inches (millimeters).87 (4.75).75 (4.45) K.6 (.4).6 (.5).262 (6.65).25 (6.35).242 (6.5).238 (6.5) 2.7 (4.35).67 (4.25).47 (.2).39 (.).46 (3.7).34 (3.4).87 (2.2).75 (.9) Mounting Pad Layout.89 (4.8).89 (4.8).73 (4.4).55 (3.94) NOM..268 (6.8).86 (4.72).3 (.75) NOM..49 (.24).37 (.94).5 (.27).84 (2.3) NOM..53 (.35).4 (.5) Conform to JEDEC TO-277A.4 (.4).55 (.4) Revision: 3-Sep-4 Document Number: 9557 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9