General Description The is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 1A (Min.) continuous load current. The features low power consumption. The is available in 1.2V, 1.8V, 2.5V and 3.3V regulator output, and available in excellent output accuracy 1.5%, it is also available in an excellent load regulation and line regulation performance. The is available in standard packages of SOT-223, TO-252-2 (1), TO-252-2 (3), TO-263-3, SOIC-8 and PSOP-8. Features Output Voltage Accuracy: ±1.5% Output Current: 1A (Min.) Fold-back Short Current Protection: ma Low Dropout Voltage (3.3V): 4mV (Typ.) @ =1A Stable with 4.7µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Excellent Line Regulation: 0.02%/V (Typ.), 0.1%/V (Max.) @ =30mA Excellent Load Regulation: 0.2% @ =0A to 1A Low Quiescent Current: 60µA (1.2V/1.8V/ 2.5V) Low Output Noise: 30µVRMS PSRR: 68dB @ Freq=1KHz (1.2V/1.8V) OTSD Protection Operating Temperature Range: -40 C to 85 C ESD: MM 400V, HBM 4000V Applications LCD Monitor LCD TV STB SOT-223 TO-263-3 TO-252-2 (1) TO-252-2 (3) SOIC-8 PSOP-8 Figure 1. Package Types of 1
Pin Configuration H Package (SOT-223) S Package (TO-263-3) D Package (TO-252-2 (1)) (TO-252-2 (3)) M Package (SOIC-8) MP Package (PSOP-8) Figure 2. Pin Configuration of (Top View) 2
Pin Descriptions Pin Number SOT-223, TO-263-3, TO-252-2 (1) / (3) SOIC-8/PSOP-8 Pin Name Function 1 1, 3, 5, 6, 7, GND Ground 2 2 VOUT Regulated Output 3 4 VIN Input Voltage Pin 8 EN Chip Enable, H normal work, L shutdown output Functional Block Diagram EN (8) Shutdown Logic 3 (4) VIN Thermal Shutdown Foldback Current Limit 3m 2 (2) VOUT V REF GND 1 (1, 3, 5, 6, 7) A (B) A: SOT-223, TO-263-3, TO-252-2 (1)/(3) B: SOIC-8, PSOP-8 Figure 3. Functional Block Diagram of 3
Ordering Information - Circuit Type Package H: SOT-223 D: TO-252-2 (1)/TO-252-2 (3) S: TO-263-3 M: SOIC-8 MP: PSOP-8 G1: Green TR: Tape & Reel 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V Package Temperature Range SOT-223-40 to 85 C TO-252-2 (1)/ TO-252-2 (3) -40 to 85 C TO-263-3 -40 to 85 C SOIC-8-40 to 85 C PSOP-8-40 to 85 C Part Number Marking ID Packing Type H-1.2TRG1 GH12C Tape & Reel H-1.8TRG1 GH12D Tape & Reel H-2.5TRG1 GH14C Tape & Reel H-3.3TRG1 GH12E Tape & Reel D-1.2TRG1 D-1.2G1 Tape & Reel D-1.8TRG1 D-1.8G1 Tape & Reel D-2.5TRG1 D-2.5G1 Tape & Reel D-3.3TRG1 D-3.3G1 Tape & Reel S-1.2TRG1 S-1.2G1 Tape & Reel S-1.8TRG1 S-1.8G1 Tape & Reel S-2.5TRG1 S-2.5G1 Tape & Reel S-3.3TRG1 S-3.3G1 Tape & Reel M-1.2TRG1 2114M-1.2G1 Tape & Reel M-1.8TRG1 2114M-1.8G1 Tape & Reel M-2.5TRG1 2114M-2.5G1 Tape & Reel M-3.3TRG1 2114M-3.3G1 Tape & Reel MP-1.2TRG1 2114MP-1.2G1 Tape & Reel MP-1.8TRG1 2114MP-1.8G1 Tape & Reel MP-2.5TRG1 2114MP-2.5G1 Tape & Reel MP-3.3TRG1 2114MP-3.3G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. 4
Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage 6.5 V Operating Junction Temperature Range T J 1 ºC Storage Temperature Range T STG -65 to 1 ºC Lead Temperature (Soldering, 10sec) T LEAD 260 ºC ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage 2.5 6.0 V Operating Ambient Temperature Range -40 85 C 5
Electrical Characteristics -1.2 Electrical Characteristics (Note 2) ( =2.5V, (Ceramic), (Ceramic), Typical = 25 C, Bold typeface applies over -40 O C 85 O C ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage V OUT =2.5V, 1mA 30mA V OUT 98.5% 1.2 V OUT 101.5% V Input Voltage 6.0 V Maximum Output Current (MAX) =2.5V, V OUT =1.182V to 1.218V 1 A Load Regulation V OUT /V OUT I OUT =2.5V, 1mA 1A 0.2 1 %/A Line Regulation V OUT /V OUT 2.5V V V IN 6V, =30mA 0.02 ±0.1 %/V IN Dropout Voltage V DROP =1.0A 1200 1300 mv Quiescent Current I Q =2.5V, =0mA 60 75 µa Power Supply Rejection Ratio PSRR Ripple 1Vp-p f=100hz 68 =2.5V, =100mA f=1khz 68 db Output Voltage Temperature Coefficient V OUT /V OUT T =30mA, =-40 C to 85 C ±30 ppm/ C Short Current Limit I SHORT V OUT =0V ma RMS Output Noise V NOISE 10Hz f 100kHz (No Load) 30 µv RMS V EN High Voltage V IH Enable logic high, regulator on 1.5 V EN Low Voltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD =3.5V, V EN in OFF mode 0.01 1.0 µa Start-up Time T S No Load 20 µs EN Pull Down Resistor V OUT Discharge Resistor Thermal Temperature Thermal Hysteresis Thermal Resistance (Junction to Case) Shutdown Shutdown RPD 3.0 mω R DCHG Set EN pin at Low 60 Ω T OTSD 160 T HYOTSD 25 θ JC SOIC-8 74.6 PSOP-8 43.7 SOT-223.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at =25 C. Over temperature specifications guaranteed by design only. C C /W 6
Electrical Characteristics (Continued) -1.8 Electrical Characteristics (Note 2) ( =2.8V, (Ceramic), (Ceramic), Typical = 25 C, Bold typeface applies over -40 O C 85 O C ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage V OUT =2.8V, 1mA 30mA V OUT 98.5% 1.8 V OUT 101.5% V Maximum Output Current (MAX) =2.8V, V OUT =1.773V to 1.827V 1.0 A Load Regulation Line Regulation V OUT /V OUT I OUT V OUT /V OUT V IN =2.8V, 1mA 1A 0.2 1.0 %/A 2.8V 6V, =30mA 0.02 ±0.1 %/V Dropout Voltage V DROP =1.0A 0 700 mv Quiescent Current I Q =2.8V, =0mA 60 75 µa Power Supply Rejection Ratio PSRR Ripple 1Vp-p f=100hz 68 =2.8V, =100mA f=1khz 68 db Output Voltage Temperature Coefficient V OUT /V OUT T =30mA, =-40 C to 85 C ±30 ppm/ C Short Current Limit I SHORT V OUT =0V ma RMS Output Noise V NOISE 10Hz f 100kHz (No load) 30 µv RMS V EN High Voltage V IH Enable logic high, regulator on 1.5 V EN Low Voltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD =3.5V, V EN in OFF mode 0.01 1.0 µa Start-up Time T S No Load 20 µs EN Pull Down Resistor V OUT Discharge Resistor Thermal Temperature Thermal Hysteresis Thermal Resistance (Junction to Case) Shutdown Shutdown RPD 3.0 mω R DCHG Set EN pin at Low 60 Ω T OTSD 160 T HYOTSD 25 θ JC SOIC-8 74.6 PSOP-8 43.7 SOT-223.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 C C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at =25 C. Over temperature specifications guaranteed by design only. 7
Electrical Characteristics (Continued) -2.5 Electrical Characteristics (Note 2) ( =3.5V, (Ceramic), (Ceramic), Typical = 25 C, Bold typeface applies over -40 O C 85 O C ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage V OUT =3.5V, 1mA 30mA V OUT 98.5% 2.5 V OUT 101.5% V Maximum Output Current (MAX) =3.5V, V OUT =2.463V to 2.537V 1.0 A Load Regulation Line Regulation V OUT /V OUT I OUT V OUT /V OUT V IN Vout=2.5V, =Vout+1V 1mA 1A 0.2 1.0 %/A 3.5V 6V, =30mA 0.02 ±0.1 %/V Dropout Voltage V DROP =1A 4 7 mv Quiescent Current I Q =3.5V, =0mA 60 80 µa Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR V OUT /V OUT T Ripple 1Vp-p f=100hz 65 =3.5V, =100mA f=1khz 65 =30mA ±30 ppm/ C Short Current Limit I SHORT V OUT =0V ma RMS Output Noise V NOISE 10Hz f 100kHz 30 µv RMS db V EN High Voltage V IH Enable logic high, regulator on 1.5 V EN Low Voltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD =3.5V, V EN in OFF mode 0.01 1.0 µa Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mω V OUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Temperature Thermal Hysteresis Thermal Resistance (Junction to Case) Shutdown Shutdown T OTSD 160 T HYOTSD 25 θ JC SOIC-8 74.6 PSOP-8 43.7 SOT-223.9 TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at =25 C. Over temperature specifications guaranteed by design only. C C /W 8
Electrical Characteristics (Continued) -3.3 Electrical Characteristics (Note 2) ( =4.3V, (Ceramic), (Ceramic), Typical = 25 C, Bold typeface applies over -40 O C 85 O C ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output Voltage V OUT =4.3V, 1mA 30mA V OUT 98.5% 3.3 V OUT 101.5% V Maximum Output Current (MAX) =4.3V, V OUT =3.25V to 3.35V 1.0 A Load Regulation Line Regulation V OUT /V OUT I OUT V OUT /V OUT V IN =4.3V, 1mA 1A 0.2 1.0 %/A 4.3V 6V, =30mA 0.02 ±0.1 %/V Dropout Voltage V DROP =1A 4 7 mv Quiescent Current I Q =4.3V, =0mA 65 90 µa Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR V OUT /V OUT T Ripple 1Vp-p =4.3V, f=100hz 65 =100mA f=1khz 65 =30mA ±30 ppm/ C Short Current Limit I SHORT V OUT =0V ma RMS Output Noise V NOISE 10Hz f 100kHz (No load) 30 µv RMS db V EN High Voltage V IH Enable logic high, regulator on 1.5 V EN Low Voltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD =3.5V, V EN in OFF mode 0.01 1.0 µa Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mω V OUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature T OTSD 160 Thermal Shutdown Hysteresis T HYOTSD 25 C SOIC-8 74.6 PSOP-8 43.7 Thermal Resistance (Junction to Case) θ JC SOT-223.9 C /W TO-252-2 (1) / TO-252-2 (3) 35 TO-263-3 22 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at =25 C. Over temperature specifications guaranteed by design only. 9
Typical Performance Characteristics Ground Current (µa) 0 4 400 3 300 2 200 1 100 _1.2V =2.5V =-40 O C =85 O C Ground Current (µa) 400 3 300 2 200 1 100 _1.8V =2.8V =-40 O C =85 O C 0 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) 0 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) Figure 4. Ground Current vs. Output Current Figure 5. Ground Current vs. Output Current 400 0.0 Ground Current (µa) 3 300 2 200 1 100 _2.5V =3.5V =-40 O C =85 O C Ground Current (µa) 4.0 400.0 3.0 300.0 2.0 200.0 1.0 100.0.0 _3.3V =4.3V =-40 O C =85 O C 0 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) Figure 6. Ground Current vs. Output Current Figure 7. Ground Current vs. Output Current 10
Typical Performance Characteristics (Continued) 100 100 Quiescent Current (µa) 90 80 70 60 40 _1.2V =2.5V =0mA Quiescent Current (µa) 90 80 70 60 40 30 20 10 _1.8V =2.8V No Load 30-40 -20 0 20 40 60 80 Temperature ( O C) 0-40 -20 0 20 40 60 80 100 120 Temperature ( O C) Figure 8. Quiescent Current vs. Temperature Figure 9. Quiescent Current vs. Temperature Quiescent Current (µa) 100 95 90 85 80 75 70 65 60 55 45 40 35 30 25 20 15 10 5 0-40 -20 0 20 40 60 80 100 120 Temperature ( O C) _2.5V =3.5V No Load Quiescent Current (µa) 100 90 80 70 60 40 _3.3V =4.3V =0mA 30-40 -20 0 20 40 60 80 Temperature ( O C) Figure 10. Quiescent Current vs. Temperature Figure 11. Quiescent Current vs. Temperature 11
Typical Performance Characteristics (Continued) Quiescent Current (µa) 100 90 80 70 60 40 30 20 _1.2V =0mA = -40 O C = 25 O C = 85 O C Quiescent Current (µa) 110 100 90 80 70 60 40 _1.8V =0mA =25 o C =-40 o C =85 o C 10 2 3 4 5 6 Input Voltage (V) 30 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Figure 12. Quiescent Current vs. Input Voltage Figure 13. Quiescent Current vs. Input Voltage 110 100 _2.5V =0mA 110 100 _3.3V =0mA Quiescent Current (µa) 90 80 70 60 40 =25 o C =-40 o C =85 o C Quiescent Current (µa) 90 80 70 60 40 = -40 O C = 25 O C = 85 O C 30 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 30 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 14. Quiescent Current vs. Input Voltage Figure 15. Quiescent Current vs. Input Voltage 12
Typical Performance Characteristics (Continued) Output Voltage (V) 1.216 1.212 1.208 1.204 1.200 1.196 1.192 _1.2V =2.5V =10mA =100mA =0mA =1000mA Output Voltage (V) 1.90 1.88 1.86 1.84 1.82 1.80 1.78 1.76 =10mA =100mA _1.8V =2.8V 1.188 1.184 1.74 1.72 =0mA =1000mA 1.180-40 -20 0 20 40 60 80 Temperature ( O C) 1.70-40 -20 0 20 40 60 80 Temperature ( O C) Figure 16. Output Voltage vs. Temperature Figure 17. Output Voltage vs. Temperature 2.54 2.52 3.35 3.34 3.33 _3.3V =4.3V Output Voltage (V) 2. 2.48 2.46 2.44 2.42 _2.5V =3.5V =10mA =100mA =0mA =1000mA Output Voltage (V) 3.32 3.31 3.30 3.29 3.28 3.27 3.26 =10mA =100mA =0mA =1000mA 2.40-40 -20 0 20 40 60 80 3.25-40 -20 0 20 40 60 80 Temperature ( O C) Temperature ( O C) Figure 18. Output Voltage vs. Temperature Figure 19. Output Voltage vs. Temperature 13
Typical Performance Characteristics (Continued) 1.6 1.4 _1.2V 2.0 1.8 1.6 Output Voltage (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 =-40 O C =85 O C =10mA 1 2 3 4 5 6 Output Voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 _1.8V =-40 o C =25 o C =85 o C =10mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 20. Output Voltage vs. Input Voltage Figure 21. Output Voltage vs. Input Voltage 2.5 4.0 3.5 _3.3V Output Voltage (V) 2.0 1.5 1.0 0.5 0.0 _2.5V =10mA =-40 O C =85 O C 1 2 3 4 5 6 7 Output Voltage (V) 3.0 2.5 2.0 =-40 O C 1.5 1.0 =85 O C 0.5 =10mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 22. Output Voltage vs. Input Voltage Figure 23. Output Voltage vs. Input Voltage 14
Typical Performance Characteristics (Continued) Output Voltage (V) 1.210 1.205 1.200 1.195 1.190 1.185 1.180 1.175 1.170 1.165 1.160 1.155 _1.2V =2.5V 1.1 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) =-40 O C =85 O C Output Voltage (V) 1.3 _1.2V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 =2.5V =3.3V 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Output Current (A) Figure 24. Output Voltage vs. Output Current Figure 25. Output Voltage vs. Output Current 2.00 3.0 Output Voltage (V) 1.75 1. 1.25 1.00 0.75 0. 0.25 _1.8V =2.8V =-40 O C =85 O C Output Voltage (V) 2.5 2.0 1.5 1.0 0.5 _2.5V =3.5V =-40 O C =85 O C 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Figure 26. Output Voltage vs. Output Current Figure 27. Output Voltage vs. Output Current 15
Typical Performance Characteristics (Continued) Output Voltage (V) 3.5 3.0 2.5 2.0 _3.3V 1.5 =4.3V V 1.0 IN =5V 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Output Voltage (V) 3.35 3.34 3.33 3.32 3.31 3.30 3.29 3.28 _3.3V =4.3V =-40 O C =85 O C 3.27 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) Figure 28. Output Voltage vs. Output Current Figure 29. Output Voltage vs. Output Current Dropout Voltage (V) 0.7 0.6 0.5 0.4 0.3 0.2 _1.8V =2.8V =-40 O C Dropout Voltage (V) 0.60 0.55 0. 0.45 0.40 0.35 0.30 0.25 0.20 0.15 _2.5V =3.5V =-40 O C 0.1 =85 O C 0.10 0.05 =85 O C 0.0 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) 0.00 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) Figure 30. Dropout Voltage vs. Output Current Figure 31. Dropout Voltage vs. Output Current 16
Typical Performance Characteristics (Continued) Dropout Voltage (V) 0.60 0.55 0. 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 =-40 O C =85 O C _3.3V 0.00 0.0 0.2 0.4 0.6 0.8 1.0 Output Current (A) Max. Output Current (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 _1.2V 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Figure 32. Dropout Voltage vs. Output Current Figure 33. Max. Output Current vs. Input Voltage Max. Output Current (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 _1.8V V OUT =1.8X(1+1.5%) Max. Output Current (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 _2.5V V OUT =2.5X(1+1.5%) 0.4 0.4 0.2 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Figure 34. Max. Output Current vs. Input Voltage Figure 35. Max. Output Current vs. Input Voltage 17
Typical Performance Characteristics (Continued) 1.8 0.10 Max. Output Current (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 _3.3V Output Short Current (A) 0.09 0.08 0.07 0.06 0.05 _1.2V =2.5V 0.2 0.04 0.0 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) 0.03-40 -20 0 20 40 60 80 Temperature ( O C) Figure 36. Max. Output Current vs. Input Voltage Figure 37. Output Short Current vs. Temperature 70 70 Output Short Current (ma) 60 40 30 _1.8V =2.8V 20-40 -20 0 20 40 60 80 100 120 Output Short Current (ma) 60 40 30 _2.5V =3.5V 20-40 -20 0 20 40 60 80 100 120 Temperature ( O C) Temperature ( O C) Figure 38. Output Short Current vs. Temperature Figure 39. Output Short Current vs. Temperature 18
Typical Performance Characteristics (Continued) 0.10 80 0.09 _3.3V =4.3V 70 _1.2V Output Short Current (A) 0.08 0.07 0.06 0.05 0.04 0.03-40 -20 0 20 40 60 80 Temperature ( O C) PSRR (db) 60 40 30 20 10 0 =1µF =10mA Ripple=1Vp-p 100 1k 10k 100k Frequency (Hz) Figure 40. Output Short Current vs. Temperature Figure 41. PSRR vs. Frequency 80 70 _1.8V 80 70 _2.5V 60 60 PSRR (db) 40 30 20 10 =10mA Ripple=1Vp-p PSRR (db) 40 30 20 10 =10mA Ripple=1Vp-p 0 100 1k 10k 100k Frequency (Hz) 0 100 1k 10k 100k Frequency (Hz) Figure 42. PSRR vs. Frequency Figure 43. PSRR vs. Frequency 19
Typical Performance Characteristics (Continued) PSRR (db) 80 70 60 40 30 _3.3V =1µF Ripple=1Vp-p 0mA/div V OUTAC mv/div 20 10 =10mA =100mA 0 100 1k 10k 100k Frequency (Hz) Figure 44. PSRR vs. Frequency Figure 45. Load Transient 20
Typical Application Figure 46. Typical Application of 21
Mechanical Dimensions SOT-223 Unit: mm(inch) 6.700(0.264) 7.300(0.287) 3.300(0.130) 3.700(0.146) 22
Mechanical Dimensions (Continued) TO-252-2 (1) Unit: mm(inch) 23
Mechanical Dimensions (Continued) TO-252-2 (3) Unit: mm(inch) 0.900(0.035) 1.2(0.049) 6.0(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 1.29±0.1 4.700REF 0.470(0.019) 0.600(0.024) 6.000(0.236) 6.200(0.244) 1.800REF 0.1(0.006) 0.7(0.030) 0.600(0.024) 1.000(0.039) 5.2REF 9.800(0.386) 10.40(0.409) 0 8 5 9 0.900(0.035) 1.100(0.043) 0.720(0.028) 0.900(0.035) 2.286(0.090) BSC 5 9 0.720(0.028) 0.8(0.033) 2.900REF 1.400(0.055) 1.700(0.067) 0 8 3 7 2.200(0.087) 2.380(0.094) 24
Mechanical Dimensions (Continued) TO-263-3 Unit: mm(inch) 4.070(0.160) 4.820(0.190) 3 70 8.640(0.340) 9.6(0.380) 2.540(0.100) 9.6(0.380) 10.290(0.405) 8.840(0.348) 14.760(0.581) 15.740(0.620) 1.1(0.045) 1.390(0.055) 0.510(0.020) 0.990(0.039) 2.540(0.100) 1.270(0.0) 1.390(0.055) 2.390(0.094) 2.690(0.106) 3 0 6 1.1(0.045) 1.390(0.055) 7 0.380(0.015) 0.020(0.001) 0.2(0.010) 2.640(0.104) 2.700(0.106) 0.360(0.014) 0.400(0.016) 7 2.200(0.087) 2 8 5.600(0.220) 2.540(0.100) 7.420(0.292) 7.980(0.314) 2.540(0.100) 25
Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) R0.1(0.006) 26
Mechanical Dimensions (Continued) PSOP-8 Unit: mm(inch) 3.202(0.126) 3.402(0.134) 27
http://www.bcdsemi.com IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 200241, China 800 Yi Advanced Shan Road, Analog Shanghai Circuits 200233, (Shanghai) China Corporation Tel: 800, +86-21-24162266, Yi Shan Road, Shanghai Fax: +86-21-24162277 200233, China Tel: +86-21-6485 8F, Zone B, 900, 1491, Yi Fax: Shan +86-21-54 Road, Shanghai 0008200233, China Tel: +86-21-6485 1491, Fax: +86-21-54 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 30920 Semiconductor Huntwood Ave. Corporation Hayward, 30920 CA 94544, Huntwood USA Ave. Hayward, Room Tel: +86-755-8826 E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +886-2-2656 Taiwan 2808 CA Tel : 94544, +1-510-324-2988 U.S.A Tel: Fax: +86-755-8826 7951 7865 Fax: +86-755-8826 7865 Fax: +886-2-2656 Tel: +886-2-2656 28062808 Fax: +886-2-2656 2806 Tel Fax: : +1-510-324-2988 +1-510-324-2788 Fax: +1-510-324-2788