4 V, 2 A PNP low V CEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 2 April 2 Product data sheet. Product profile. General description Combination of PNP low V CEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT8 Surface-Mounted Device (SMD) plastic package..2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain (h FE ) at high I C High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans).4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit PNP low V CEsat (BISS) transistor V CEO collector-emitter voltage open base - - 4 V I C collector current [] -.8 A I CRM repetitive peak collector [][5] - - 2 A current I CM peak collector current single pulse; t p ms [] - - 3 A R CEsat collector-emitter saturation resistance I C = 5 ma; I B = 5 ma [2] - 24 34 mω
2. Pinning information Table. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit N-channel Trench MOSFET V DS drain-source voltage T amb =25 C - - 3 V V GS gate-source voltage T amb =25 C - - ±8 V I D drain current T amb =25 C; [3] - -.66 A V GS =V R DSon drain-source on-state resistance T j =25 C; V GS =4.5V; I D =.2A [4] - 37 58 mω [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [2] Pulse test: t p 3 μs; δ.2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain cm 2. [4] Pulse test: t p 3 μs; δ.. [5] Pulse test: t p 2 ms; δ.. Table 2. Pinning Pin Description Simplified outline Graphic symbol emitter 2 base 6 5 4 6, 7 5 4 3 drain 4 source 7 8 5 gate 6 collector 2 3 2 3, 8 7 collector Transparent top view 7aaa79 8 drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version HUSON6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 2.65 mm SOT8 4. Marking Table 4. Marking codes Type number Marking code G Product data sheet Rev. 2 2 April 2 2 of 2
5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit PNP low V CEsat (BISS) transistor V CBO collector-base voltage open emitter - 4 V V CEO collector-emitter voltage open base - 4 V V EBO emitter-base voltage open collector - 5 V I C collector current [] -.8 A I CRM repetitive peak collector [][4] - 2 A current I CM peak collector current single pulse; [] - 3 A t p ms I B base current [] - 3 ma I BM peak base current single pulse; [] - A t p ms P tot total power dissipation T amb 25 C [] -. W [2] -.25 W N-channel Trench MOSFET V DS drain-source voltage T amb =25 C - 3 V V DG drain-gate voltage T amb =25 C; - 3 V R GS =2kΩ V GS gate-source voltage T amb =25 C - ±8 V I D drain current V GS =V [3] T amb =25 C - 66 ma T amb = C - 42 ma I DM peak drain current T amb =25 C; - 3.56 A single pulse; t p μs P tot total power dissipation T amb =25 C [3] - 76 mw Source-drain diode I S source current T amb =25 C - 66 ma Per device T j junction temperature - 5 C T amb ambient temperature 55 +5 C T stg storage temperature 65 +5 C [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector cm 2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain cm 2. [4] Pulse test: t p 2 ms; δ.. Product data sheet Rev. 2 2 April 2 3 of 2
.4 P tot (W).2 () (2) 6aac68..8 (3).6.4 (4).2. 75 25 25 75 25 75 T amb ( C) () FR4 PCB, 4-layer copper, mounting pad for collector cm 2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm 2 (3) FR4 PCB, single-sided copper, mounting pad for collector cm 2 (4) FR4 PCB, single-sided copper, standard footprint Fig. BISS transistor: Power derating curves 2 3aa7 2 3aa25 P der (%) I der (%) 8 8 4 4 5 5 2 T sp ( C) 5 5 2 T sp ( C) Fig 2. P der P tot I ----------------------- D = % I der = ------------------- % P tot( 25 C) MOSFET: Normalized total power dissipation as a function of solder point temperature Fig 3. I D25 C ( ) MOSFET: Normalized continuous drain current as a function of solder point temperature Product data sheet Rev. 2 2 April 2 4 of 2
6aac69 I D (A) Limit R DSon = V DS /I D () (2) (3) (4) (5) 2 2 V DS (V) Fig 4. I DM = single pulse () t p =ms (2) DC; T sp =25 C (3) t p =ms (4) t p = ms (5) DC; T amb =25 C; drain mounting pad cm 2 MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Product data sheet Rev. 2 2 April 2 5 of 2
6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit PNP low V CEsat (BISS) transistor R th(j-a) thermal resistance from junction to ambient in free air [] - - 5 K/W [2] - - K/W N-channel Trench MOSFET R th(j-a) thermal resistance from junction to ambient in free air [3] - - 65 K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector cm 2 [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain cm 2. 3 6aac6 Z th(j-a) (K/W) 2 duty cycle =.75.5.33.2..2.5. 5 4 3 2 2 3 t p (s) Fig 5. FR4 PCB, single-sided copper, standard footprint PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; Product data sheet Rev. 2 2 April 2 6 of 2
3 6aac6 Z th(j-a) (K/W) 2 duty cycle =.75.5.33.2..5.2. 5 4 3 2 2 3 t p (s) Fig 6. FR4 PCB, single-sided copper, mounting pad for collector cm 2 PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; 3 6aac62 Z th(j-a) (K/W) 2 duty cycle =.75.5.33.2..2.5. 5 4 3 2 2 3 t p (s) Fig 7. FR4 PCB, single-sided copper, mounting pad for collector 6 cm 2 PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; Product data sheet Rev. 2 2 April 2 7 of 2
3 6aac63 Z th(j-a) (K/W) 2 duty cycle =.75.5.33.2..2.5. 5 4 3 2 2 3 t p (s) Fig 8. FR4 PCB, 4-layer copper, mounting pad for collector cm 2 PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; 3 6aac64 Z th(j-a) (K/W) 2 duty cycle =.75.5.33..5.2..25.2 3 2 2 3 t p (s) Fig 9. FR4 PCB, single-sided copper, mounting pad for drain cm 2 MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Product data sheet Rev. 2 2 April 2 8 of 2
7. Characteristics Table 7. Characteristics for PNP low V CEsat transistor T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base V CB = 4 V; I E =A - - na cut-off current V CB = 4 V; I E =A; - - 5 μa T j =5 C I CEO collector-emitter cut-off V CE = 3 V; I B =A - - na current I EBO emitter-base cut-off current V EB = 5 V; I C =A - - na h FE DC current gain V CE = 5 V [] V CEsat R CEsat V BEsat V BEon collector-emitter saturation voltage collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage f T transition frequency V CE = V; I C = 5 ma; f=mhz C c collector capacitance V CB = V; I E =i e =A; f=mhz [] Pulse test: t p 3 μs; δ.2. I C = ma 3 - - I C = ma 3-8 I C = 5 ma 2 - - I C = A 4 - - I C = ma; I B = ma [] - 85 4 mv I C = 5 ma; I B = 5 ma [] - 2 7 mv I C = A; I B = ma [] - 2 3 mv I C = 5 ma; I B = 5 ma [] - 24 34 mω I C = A; I B = ma [] - -. V V CE = 5 V; I C = A [] - - V 5 - - MHz - - 2 pf Product data sheet Rev. 2 2 April 2 9 of 2
2 6aaa465 2.4 6aaa469 h FE 8 4 () (2) (3) I C (A).6.8 I B (ma) = 24 2.6 9.2 6.8 4.4 2 9.6 7.2 4.8 2.4 2 3 4 I C (ma) 2 3 4 5 V CE (V) Fig. V CEsat = 5 V () T amb = C (2) T amb =25 C (3) T amb = 55 C PNP transistor: DC current gain as a function of collector current; Fig. T amb =25 C PNP transistor: Collector current as a function of collector-emitter voltage;.6 6aac65.3 6aaa468 V BE (V).2 V BEsat (V).9 ().8 () (2).4 (2) (3).5 (3) Fig 2.. 2 3 4 I C (ma) V CEsat = 5 V () T amb = 55 C (2) T amb =25 C (3) T amb = C PNP transistor: Base-emitter voltage as a function of collector current; Fig 3.. 2 3 4 I C (ma) I C /I B =2 () T amb = 55 C (2) T amb =25 C (3) T amb = C PNP transistor: Base-emitter saturation voltage as a function of collector current; Product data sheet Rev. 2 2 April 2 of 2
6aaa466 6aaa47 V CEsat (V) V CEsat (V) () (2) () (2) 2 (3) Fig 4. (3) 2 3 4 I C (ma) I C /I B =2 () T amb = C (2) T amb =25 C (3) T amb = 55 C PNP transistor: Collector-emitter saturation voltage as a function of collector current; Fig 5. 3 2 3 4 I C (ma) T amb =25 C () I C /I B = (2) I C /I B =5 (3) I C /I B = PNP transistor: Collector-emitter saturation voltage as a function of collector current; 3 6aaa47 3 6aaa472 R CEsat (Ω) R CEsat (Ω) 2 2 () (2) (3) () (2) (3) Fig 6. 2 3 4 I C (ma) I C /I B =2 () T amb = C (2) T amb =25 C (3) T amb = 55 C PNP transistor: Collector-emitter saturation resistance as a function of collector current; Fig 7. 2 3 4 I C (ma) T amb =25 C () I C /I B = (2) I C /I B =5 (3) I C /I B = PNP transistor: Collector-emitter saturation resistance as a function of collector current; Product data sheet Rev. 2 2 April 2 of 2
Table 8. Characteristics for N-channel Trench MOSFET T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =μa; V GS =V voltage T j =25 C 3 - - V T j = 55 C 27 - - V V GS(th) gate-source threshold I D =25μA; V DS =V GS voltage T j =25 C.45.7.95 V T j = 5 C.25 - - V T j = 55 C - -.5 V I DSS drain leakage current V DS =3V; V GS =V T j =25 C - - μa T j = 5 C - - μa I GSS gate leakage current V GS = ±8 V; V DS =V - ± na R DSon drain-source on-state V GS =4.5V; I D =.2A [] resistance T j =25 C - 37 58 mω T j = 5 C - 663 985 mω V GS =2.5V; I D =. A - 44 69 mω V GS =.8V; I D = 75 ma - 54 92 mω Dynamic characteristics Q G(tot) total gate charge I D =A; V DS =5V; -.89 - nc Q GS gate-source charge V GS =4.5V -. - nc Q GD gate-drain charge -.2 - nc C iss input capacitance V GS =V; V DS =25V; - 43 - pf C oss output capacitance f=mhz - 7.7 - pf C rss reverse transfer - 4.8 - pf capacitance t d(on) turn-on delay time V DS =5V; R L =5Ω; - 4. - ns t r rise time V GS =V; R G =6Ω - 7.5 - ns t d(off) turn-off delay time - 8 - ns t f fall time - 4.5 - ns Source-drain diode V SD source-drain voltage I S =.3 A; V GS = V -.76.2 V [] Pulse test: t p 3 μs; δ.. Product data sheet Rev. 2 2 April 2 2 of 2
2.5 I D (A) 2.5 3an94 4.5 3 2.5 2.8 3 I D (A) 4 min typ max 3am43 V GS (V) =.5 5.5.5.5 2 V DS (V) 6.4.8.2 V GS (V) Fig 8. T j =25 C T j =25 C; V DS =5V MOSFET: Output characteristics: drain current as a function of drain-source voltage; Fig 9. MOSFET: Sub-threshold drain current as a function of gate-source voltage. 6aac66 2.5 3an96 R DSon (Ω).8 () (2) I D (A) 2 25 C T j = 5 C.6 (3).5.4 (4) (5).2.5...5..5 2. 2.5 I D (A) 2 3 4 V GS (V) Fig 2. T j =25 C () V GS =.8V (2) V GS =2.V (3) V GS =2.5V (4) V GS =3.V (5) V GS =4.5V MOSFET: Drain-source on-state resistance as a function of drain current; Fig 2. V DS >I D R DSon MOSFET: Transfer characteristics: drain current as a function of gate-source voltage; Product data sheet Rev. 2 2 April 2 3 of 2
.8 6aac68.2 3aj65 a V GS(th) (V).2.9 max.6 typ.6.3 min. 6 6 2 8 T j ( C) 6 6 2 8 T j ( C) a = R DSon ----------------------------- R DSon( 25 C) I D =ma; V DS =V GS Fig 22. MOSFET: Normalized drain-source on-state resistance as a function of junction temperature; Fig 23. MOSFET: Gate-source threshold voltage as a function of junction temperature C (pf) 2 3an98 C iss 5 V GS (V) 4 I D = A T j = 25 C V DS = 5 V 3an99 3 C oss 2 C rss - V DS (V) 2.2.4.6.8 Q G (nc) f=mhz; V GS =V Fig 24. MOSFET: Input, output and reverse transfer capacitances as a function of drain-source voltage; Fig 25. MOSFET: Gate-source voltage as a function of gate charge; Product data sheet Rev. 2 2 April 2 4 of 2
V DS I S (A).8 V GS = V 3an97 I D.6 V GS(pl).4 V GS(th) V GS Q GS Q GS2.2 5 C T j = 25 C Q GS Q G(tot) Q GD 7aaa37.2.4.6.8 V SD (V) Fig 26. MOSFET: Gate charge waveform definitions Fig 27. MOSFET: Source current as a function of source-drain voltage; 8. Package outline 2..9..9.65 max.4 max 2..9.77.57 (2 ).54.44 (2 ) 3 4 6.65 (4 ).35.25 (6 ).3.2 Dimensions in mm -5-3 Fig 28. Package outline SOT8 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. [] Type number Package Description Packing quantity 3 SOT8 4 mm pitch, 8 mm tape and reel -5 [] For further information and the availability of packing methods, see Section 3. Product data sheet Rev. 2 2 April 2 5 of 2
. Soldering 2..65.65.49.49.3 (6 ).4 (6 ).875 solder lands 2.25.5 (2 ).5 (2 ) solder paste solder resist.875 occupied area Dimensions in mm.35 (6 ).45 (6 ).72 (2 ).82 (2 ) sot8_fr Reflow soldering is the only recommended soldering method. Fig 29. Reflow soldering footprint SOT8 Product data sheet Rev. 2 2 April 2 6 of 2
. Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes v.2 242 Product data sheet - v. Modifications: Section. General description : updated. Section 2 Pinning information : updated. Table, 5, 6, 7 and 8: updated according to the last measurements. Figure to 27: added. Section 2 Legal information : updated. v. 2825 Preliminary data sheet - - Product data sheet Rev. 2 2 April 2 7 of 2
2. Legal information 2. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 2.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 2.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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Product data sheet Rev. 2 2 April 2 8 of 2
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia s specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia s standard warranty and Nexperia s product specifications. 2.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 3. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Product data sheet Rev. 2 2 April 2 9 of 2
4. Contents Product profile........................... General description......................2 Features and benefits.....................3 Applications............................4 Quick reference data.................... 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics.................. 6 7 Characteristics.......................... 9 8 Package outline........................ 5 9 Packing information.................... 5 Soldering............................. 6 Revision history........................ 7 2 Legal information....................... 8 2. Data sheet status...................... 8 2.2 Definitions............................ 8 2.3 Disclaimers........................... 8 2.4 Trademarks........................... 9 3 Contact information..................... 9 4 Contents.............................. 2 For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 2 April 2