11 11 AMPLIFIER 1111 OUTPUT POER RL =. @THD = % VCC = 2V STBY AND MUTE FUNCTIONS LO TURNON TURNOFF POP NOISE NO BOUCHEROT CELL NO STBY RC INPUT NETORK SINGLE SUPPLY RANGING UP TO 3V SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION INTERNALLY FIXED GAIN SOFT CLIPPING MULTIATT 1 PACKAGE DESCRIPTION The TDA79S is a stereo 1111 class AB power amplifier assembled in the @ Multiwatt 1 package, specially designed for high quality sound, TV applications. BLOCK AND APPLICATION CIRCUIT INR INL 7µF 7nF S_GND 7nF 1 SVR 7 11 13 OP AMP MUTE/STBY PROTECTIONS OP AMP 6K Multiwatt 1 ORDERING NUMBER: TDA79S Features of the TDA79S include linearstandby and mute functions. 1 9 1 MULTIPOER BIII TECHNOLOGY OUTR STBY MUTE OUTL µf µf K 1µF D99AU1 S1 STBY S2 MUTE V S_GND V January 2 1/
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit DC Supply Voltage V V IN Maximum Input Voltage Vpp P tot Total Power Dissipation (T amb = 7 C) 2 T amb Ambient Operating Temperature (1) 2 to C T stg,t J Storage and Junction Temperature to 1 C (1) Operation between 2 to C guaranteed by correlation with to 7 C. PIN CONNECTION (top view) THERMAL DATA Symbol Parameter Value Unit R th jcase Thermal Resistance junctioncase Typ. = 2; Max. = 2. C/ R th jamb Thermal Resistance junctionambient max 3 C/ ELECTRICAL CHARACTERISTCS (Refer to the test circuit Vs = 2V; RL = Ω, Rg = Ω, Tamb = 2 C) Symbol Parameter Test Condition Min. Typ. Max. Unit V s Supply Voltage Range 11 3 V I q Total Quiescent Current 7 ma DCV os Output DC Offset Referred to SVR Potential No Input Signal 7 7 mv V O Quiescent Output Voltage. 11. V P O Output Power THD = %; R L = Ω; = 2V THD = 1%; R L = Ω; = 2V 1 1 13 11 9 7 6 3 2 1 D99AU16 OUTR OUTL MUTE STBY S_GND SVR N.C. INL N.C. N.C. N.C. INR 9. 7. 11. THD = %; R L = Ω; = 2V THD = 1%; R L = Ω; = 2V 7.7 6. THD = %; R L = Ω; = 1V THD = 1%; R L = Ω; = 1V 3. 2.2 3.2 2/
ELECTRICAL CHARACTERISTCS (Refer to the test circuit Vs = 2V; RL = Ω, Rg = Ω, Tamb = 2 C) Symbol Parameter Test Condition Min. Typ. Max. Unit THD Total Harmonic Distortion G v = 3dB; P O = 1; f = 1KHz. % I peak Output Peak Current (internally limited) 1.7 2. A V IN Input Signal 2. Vrms G V Closed Loop Gain 2. 3 31. db B.6 MHz e N Total Output Noise f = 2Hz to 22KHz PLAY, f = 2Hz to 22KHz MUTE µv 6 1 µv SR Slew Rate V/µs R i Input Resistance 22. 3 KΩ SVR Supply Voltage Rejection f = 1KHz; max volume C SVR = 7µF; V RIP = 1Vrms f = 1KHz; max attenuation C SVR = 7µF; V RIP = 1Vrms 3 39 db 6 db T M Thermal Muting 1 C T S Thermal Shutdown 16 C MUTE & INPUT SELECTION FUNCTIONS TBY Standby ON Threshold 2.3 2. 2.7 V V MUTE Mute Threshold 2.3 2. 2.7 V I qstby Quiescent Current @ Standby.6 1 ma A MUTE Mute Threshold 6 V I stbybias Standby bias current Stand by ON: TBY = V; V mute = V µa Play or Mute 2 µa I mutebias Mute Bias Current Mute 1 µa Play.2 2 µa 3/
Figure 1. Application circuit C1 µf C9.1µF INR INL C 7µF C2 7nF S_GND C3 7nF 11 1 Figure 2. PCB and Component Layout SVR 7 13 OP AMP MUTE/STBY PROTECTIONS OP AMP C µf C6 µf 1 1 9 C7 1µF D99AU17 R2 K OUTR OUTL S1 STBY V S_GND V S2 MUTE /
APPLICATION SUGGESTIONS The recommended values of the external components are those shown on the application circuit of figure 1. Different values can be used, the following table can help the designer. COMPONENT SUGGESTION VALUE PURPOSE LARGER THAN SUGGESTION SMALLER THAN SUGGESTION R2 K Mute time constant Larger mute on/off time Smaller mute on/off time C1 µf Supply voltage bypass Danger of oscillation C2 7nF Input DC decoupling Lower low frequency cutoff Higher low frequency cutoff C3 7nF Input DC decoupling Lower low frequency cutoff Higher low frequency cutoff C 7µF Ripple rejection Better SVR orse SVR C6 µf Output DC decoupling Lower low frequency cutoff Higher low frequency cutoff C7 1µF Mute time constant Larger mute on/off time Smaller mute on/off time C µf Output DC decoupling Lower low frequency cutoff Higher low frequency cutoff C9 nf Supply voltage bypass Danger of oscillation TYPICAL CHARACTERISTICS: Refer to the application circuit of fig.1a T amb = 2 C; = 2V; R L = Ω; f = 1KHz; R S = Ω; unless otherwise specified. Figure 3. Output Power vs Supply Voltage P OUT () 16 1 6 2 R L =Ω d=% d=1% D97AU9 11 1 19 23 27 31 (V) Figure. Distortion vs Output Power.1 2 6 P OUT () d (%) 1.1 =2V R L =Ω f=1khz f=1khz D97AU6 /
Figure. Output Power vs Supply Voltage Figure. Mute Attenuation vs V pin # P OUT () D97AU61 ATT (db) D97AU66 1 R L =Ω 2 db=1 6 d=% d=1% 6 2 1 16 1 2 22 2 (V) Figure 6. Distortion vs Output Power d (%) 1.1 =2V R L =Ω f=1khz f=1khz D97AU62.1 2 6 P OUT () Figure 7. Standby Attenuation vs Vpin #9 ATT (db) 2 Figure 9. Power dissipation vs Output Power Figure. Power dissipation vs Output Power 6 db=1 D97AU6 1 2 3 Vpin#(V) P DISS () 6 2 P DISS () 16 R L =2 x Ω f=1khz =1V =1V D97AU67 =2V =2V.1 1 P OUT () R L =2 x Ω f=1khz =26V =2V D97AU6 1 2 3 Vpin#9(V).1 1 P OUT () 6/
MUTE STANDBY TRUTH TABLE MUTE StBY OPERATING CONDITION H H STANDBY L H STANDBY H L MUTE L L PLAY Turn ON/OFF Sequences (for optimizing the POP performances) A) USING ONLY THE MUTE FUNCTION (V) 2 STBY pin#9 (V) OFF B) USING ONLY THE MUTE FUNCTION VSVR pin#7(v) 2.V MUTE pin# (V) INPUT (mv) VOUT (V) IQ (ma) STBY MUTE PLAY MUTE STBY D96AU31A To semplify the application, the standby pin can be connected directly to Ground. During the ON/OFF transitions is recommended to respect the following conditions: At the turnon the transition mute to play must be made when the SVR pin is higher than 2.V At the turnoff the TDA79S must be brought to mute from the play condition when the SVR pin is higher than 2.V. OFF 7/
Figure 11. PINS: INL, INR Figure 1. PIN :MUTE INn 6K µa MUTE 2 K µa SVR D97AU9 D97AU92 Figure. PINS: PGND, SGND GND Figure 13. PIN: STBY STBY Figure 16. PIN: SVR 2 6K D97AU9 D97AU93 µa 2K SVR 2K 6K 1K Figure 1. PINS: OUT R, OUT L D97AU 6K 1K OUT L OUT OUT R µa D97AUA /
DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A.197 B 2.6. C 1.6.63 D 1.39 E.9..19.22 F.66.7.26.3 G 1.2 1.27 1.2...6 G1 17.3 17.7 1.3.69.7.7 H1 19.6.772 H2 2.2.79 L 21.9 22.2 22..62.7.6 L1 21.7 22.1 22...7.6 L2 17.6 1.1.69.713 L3 17.2 17. 17.7.679.69.699 L.3.7.9.6.21.29 L7 2.6 2.9..11 M.2...167.179.191 M1.73..3.16.2.21 S 1.9 2.6.7.2 S1 1.9 2.6.7.2 Dia1 3.6 3..1.12 OUTLINE AND MECHANICAL DATA Multiwatt1 (Vertical) 1636 J 9/
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2 STMicroelectronics All rights reserved STMicroelectronics GROUP OF COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States www.st.com /