TLP7 Industrial inverters Inverter for air conditioners IGBT/Power MOS FET gate drive TOSHIB Photocoupler Gals IRED + Photo IC TLP7 4.58±.25 5 4 Unit: mm TLP7 consists of a Gals light-emitting diode and an integrated photodetector. This unit is -lead SDIP package. The TLP7 is 5% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP7 is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP7 is capable of direct gate driving of low-power IGBTs. 2 3.8±.25 3.5 +.5.25 +..5 7.2±.25 4. +.25.2 Peak output current : ±. (max) Guaranteed performance over temperature : -4 to C Supply current : 2 m (max) Power supply voltage : to 3 Threshold input current : LH = 5 m (max) Switching time (tplh / tphl) : 7 ns (max) Common mode transient immunity : ± k/μs (min) Isolation voltage : 5 rms (min) Construction mechanical rating Creepage Distance Clearance Insulation Thickness 7. mm (min) 7. mm (min).4 mm (min) UL approved : UL577, File No. E7349 c-ul approved : CS Component cceptance Service No. 5, File No.E7349 Option (D4) DE approved : EN747-5-5 EN5 EN95- (Note ) EN238-(Pending) (Note).4±..25±.27±.2.25±.25 TOSHIB -5J Weight:.2 g (typ.) 9.7±.3 Pin Configuration (Top iew) 2 SHIELD 5-5J : NODE 2: N.C. 3: CTHODE 4: GND 5: OUTPUT : Note: When a EN747-5-5 approved type is needed, please designate the Option(D4) Truth Table Input LED Tr Tr2 Output Schematic + F 3- (Tr) (Tr2) I CC I O 5 O H ON ON OFF H L OFF OFF ON L 4 GND SHIELD.-μF bypass capacitor must be connected between pins and 4. Start of commercial production 24-4 27-5-3
TLP7 bsolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Forward current 2 m Forward current derating (Ta 85 C) / Ta -.54 m/ C Pulse transient forward current (Note ) P Detector LED Reverse voltage R 5 Input power dissipation P D 4 mw Input power dissipation derating (Ta 85 C) ΔP D/ΔTa -. mw/ C Junction temperature Tj 25 C H peak output current (Note 2) I OPH -. L peak output current (Note 2) I OPL. Output voltage O 35 Supply voltage 35 Output power dissipation PO 4 mw Junction temperature Tj 25 C Operating frequency (Note 3) f 25 khz Operating temperature range Topr -4 to C Storage temperature range Tstg -55 to 25 C Lead soldering temperature ( s) (Note 4) Tsol 2 C Isolation voltage (C, s, R.H. %) (Note 5) B S 5 rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: ceramic capacitor (. μf) should be connected from pin to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed cm. Note : Pulse width P W μs, 3 pps Note 2: Exponential waveform pulse width P W 2 μs, f 5 khz Note 3: Exponential waveform I OPH -.3 ( 2 μs), I OPL +.3 ( 2 μs), Ta = C Note 4: For the effective lead soldering area Note 5: Device considered a two-terminal device: pins, 2 and 3 paired with pins 4, 5 and respectively. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note ) (ON) 7.5 m Input voltage, OFF F (OFF).8 Supply voltage 3 Peak output current I OPH / I OPL ±.2 Operating temperature Topr -4 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. dditionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : Input signal rise time (fall time) <.5 μs. 2 27-5-3
TLP7 Electrical Characteristics (Ta = -4 to C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage F = 5 m, Ta = 25 C.55.7 Temperature coefficient of forward voltage F/ Ta = 5 m -2. m/ C Input reverse current I R R = 5, Ta = 25 C μ Input capacitance C T =, f = MHz, Ta = 25 C 45 pf Output current Output voltage Supply current (Note 7) H Level L Level I OPH CC = 5-5 = 4 -.38 -.2 I = 5 m OPH2-5 = -. -.4 I OPL 2 CC = 5 5-4 = 2.2.3 I = m OPL2 5-4 =.4.2 H Level OH 3 L Level OL 4 = I O = - m, = 5 m I O = m, F =.8. 8.5.4. H Level I CCH 5 = to 3 = m.4 2. L Level I CCL O=Open = m.3 2. Threshold input current L H LH = 5, O > 2.5 5 m Threshold input voltage H L FHL = 5, O <.8 Supply voltage 3 ( * ): ll typical values are at Ta = 25 C m Note: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low power consumption design. It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Note 7: Duration of IO time 5 μs, pulse Isolation Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance input to output C S S =, f = MHz (Note 5). pf Isolation resistance R S R.H. %, S = 5 (Note 5) 2 4 Ω Isolation voltage B S C, s, in oil rms C, s 5 DC, s, in oil dc 3 27-5-3
TLP7 Switching Characteristics (Ta = -4 to C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit L H tplh = 5 m 7 Propagation delay time H L tphl = 3 = 5 m 7 Output rise time (-9 %) Output fall time (9- %) tr tf 7 R g = 47 Ω C g = 3 nf = 5 m = 5 m 5 5 ns Switching time dispersion between ON and OFF Common mode transient immunity at HIGH level output Common mode transient immunity at LOW level output tphl-tplh CM H CM L 8 CM = p-p = 3 Ta = 25 C = 5 m = 5 m O (min) = 2 = m O (max) = 5 - /μs ( * ): ll typical values are at Ta = 25 C. Test Circuit : IOPH Test Circuit 2: IOPL -5 I OPH. μf. μf I OPL 5-4 Test Circuit 3: OH Test Circuit 4: OL OH. μf I O F. μf OL I O Test Circuit 5: ICCH Test Circuit : ICCL I CCH I CCL. μf. μf 4 27-5-3
TLP7 Test Circuit 7: tplh, tphl, tr, tf, PDD. μf O Rg = 47 Ω Cg = 3 nf tr tf OH 9% O 5% % tplh tphl OL Test Circuit 8: CMH, CML 9% SW B. μf O CM % tr tf CM + O SW : = 5 m SW B: = m CM H 2 CM L CM L = 8 tr (μs) CM H = - 8 tf (μs) CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the LOW (HIGH) state. 5 27-5-3
TLP7 - F Δ F/Δ Ta- Forward Current (m) 5 3 5 3.5.3..5.3 Ta = 25 C Coefficient Δ F/Δ Ta(m/ C) -2. -2.4-2.2-2. -.8 -....2.4..8 2. -.4..3.5 3 5 3 Forward oltage F() Forward Current (m) llowable forward current (m) 4 3 2 IF -Ta -4-2 2 4 8 2 Threshold input current IFLH (m) 5 4 3 2 =5 O> LH Ta -4-2 2 4 8 Low Level Output oltage OL[].8..4.2 F =.8 I O = m, = OL -Ta High Level Output oltage OH[] 3 25 2 5 5 IF = 5 m I o = - m, = OH -Ta -4-2 2 4 8-4 -2 2 4 8 *: The above graphs show typical characteristics. 27-5-3
TLP7 Low level supply current ICCL (m) 8 4 2 CC=3 ICCL-Ta -4-2 2 4 8 High level supply current ICCH (m) 8 4 2 =5 m CC=3 ICCH-Ta -4-2 2 4 8 Low level output current IOPL ().8..4.2 IF= m, CC=5 (Note 7) I OPL Ta -5=. -5=2. -4-2 2 4 8 High level output current IOPH () -.2 -.4 -. -.8 IF=5 m, CC=5 (Note 7) I OPH Ta 8-=4. 8-= - -4-2 2 4 8 Propagation delay time tplh, tphl (ns) 5 4 3 2 =5 m, =3 Rg=47 Ω, Cg=3 nf tplh tphl tphl,tplh-ta -4-2 2 4 8 *: The above graphs show typical characteristics. 7 27-5-3
TLP7 RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIB"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIB. Even with TOSHIB's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIB works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIB information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIB Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIB SSUMES NO LIBILITY FOR CUSTOMERS' PRODUCT DESIGN OR PPLICTIONS. PRODUCT IS NEITHER INTENDED NOR WRRNTED FOR USE IN EQUIPMENTS OR SYSTEMS THT REQUIRE EXTRORDINRILY HIGH LEELS OF QULITY ND/OR RELIBILITY, ND/OR MLFUNCTION OR FILURE OF WHICH MY CUSE LOSS OF HUMN LIFE, BODILY INJURY, SERIOUS PROPERTY DMGE ND/OR SERIOUS PUBLIC IMPCT ("UNINTENDED USE"). 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