TLP3041(S),TLP3042(S),TLP3043(S)

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TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP3041(S),TLP3042(S),TLP3043(S) OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY Unit: mm The TOSHIBA TLP3041 (S), TLP3042 (S), TLP3043 (S) consist of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Peak Off-State Voltage : 400 V (min) Trigger LED Current : 15 ma (max) (TLP3041(S)) 10 ma (max) (TLP3042(S)) 5 ma (max) (TLP3043(S)) On-State Current : 100 ma (max) Isolation Voltage : 5000 Vrms (min) UL Recognized : UL1577, File No. E67349 SEMKO Approved : SS EN60065 SS EN60950, File No.9841109 BSI Approved : BS EN60065, File No.8385 BS EN60950, File No.8386 Option (D4) type VDE approved: DIN EN60747-5-2 Approved No. 40009302 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note):When a EN60747-5-2 approved type is needed, please designate the "Option (D4)" JEDEC JEITA TOSHIBA 11-7A9 weight: 0.39g (typ.) Pin Configuration (top view) 1 2 6 3 ZC 4 Construction mechanical rating 7.62 mm pich Standard Type Creepage Distance Clearance Insulation Thickness 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 10.16 mm pich TLPxxxxF Type 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) 1: Anode 2: Cathode 3: N.C. 4:Terminal 1 6:Terminal 2 ZC:Zero-cross Circuit 1

Absolute Maximum Ratings (Ta = 25 C) LED CHARACTERISTIC SYMBOL RATING UNIT Forward Current I F 50 ma Forward Current Derating (Ta 53 C) ΔI F / C 0.7 ma / C Peak Forward Current (100μs pulse, 100pps) I FP 1 A Power Dissipation P D 100 mw Power Dissipation Derating (Ta 25 C) ΔP D / C 1.0 mw / C Reverse Voltage V R 5 V Junction Temperature T j 125 C Off-State Output Terminal Voltage V DRM 400 V On-Stage RMS Ta = 25 C I T(RMS) 100 ma Current Ta = 70 C 50 On-State Current Derating (Ta 25 C) ΔI T / C 1.1 ma / C Peak On-Stage Current (100μs pulse, 120pps) I TP 2 A Peak Nonrepetitive Surge Current (P W = 10ms) I TSM 1.2 A Power Dissipation P D 300 mw Power Dissipation Derating (Ta 25 C) ΔP D / C 4.0 mw / C Junction Temperature T j 115 C Storage Temperature Range T stg 55 to 150 C Operating Temperature Range T opr 40 to 100 C Lead Soldering Temperature (10s) T sol 260 C Total Package Power Dissipation P T 330 mw Total Package Power Dissipation Derating (Ta 25 C) ΔP T / C 4.4 mw / C Isolation Voltage (AC, 1 min., R.H. 60%) (Note 1) BV S 5000 Vrms DETECTOR Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage V AC 120 Vac Forward Current I F * 15 20 25 ma Peak On-Stage Current I TP 1 A Operating Temperature T opr 25 85 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. * : In the case of TLP3042 2

Individual Electrical Characteristics (Ta = 25 C) TLP3041(S),TLP3042(S),TLP3043(S) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage V F I F = 10mA 1.0 1.15 1.3 V LED Reverse Current I R V R = 5V 10 μa Capacitance C T V = 0, f = 1MHz 10 pf Peak Off-State Current I DRM V DRM = 400V 10 100 na DETECTOR Peak On-Stage Voltage V TM I TM = 100mA 1.7 3.0 V Holding Current I H 0.6 ma Critical Rate of Rise of Off- State Voltage dv / dt V in = 120Vrms, Ta = 85 C (Fig.1) 200 500 V / μs Critical Rate of Rise of Commutating Voltage dv / dt(c) V in = 30Vrms, IT = 15mA (Fig.1) 0.2 V / μs Coupled Electrical Characteristics (Ta = 25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT TLP3041(S) 15 Trigger LED Current TLP3042(S) I FT V T = 3V 5 10 ma TLP3043(S) 5 Inhibit Voltage V IH I F = Rated I FT 40 V Leakage in Inhibited State I IH I F = Rated I FT V T = Rated V DRM 100 300 μa Capacitance Input to Output C S V S = 0, f = 1MHz 0.8 pf Isolation Resistance R S V S = 500V (R.H. 60%) 5 10 10 10 14 Ω Isolation Voltage BV S AC, 1 minute 5000 AC, 1 second (in oil) 10000 Vrms DC, 1 minute (in oil) 10000 Vdc Fig. 1 dv / dt test circuit V CC + R in 120Ω 1 2 3 6 4 R L 2kΩ V in ~ dv / dt(c) +5V,V CC dv / dt 0V 3

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