1. 2.4GHz BAND APPLICATION W-LAN/WiMAX Application 1-1 SUMMARY The characteristics of 2.4GHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 1-2-1 MEASURED DATA1 (DC) General conditions: V DD =V INV =2.8V, T a =+2 o C, Z s =Z l =Ω Parameter Symbol s Measurement data Unit Operating Voltage V DD 2.8 V Inverter Voltage V INV 2.8 V Control Voltage (High) V CTL (H) 1.8 V Control Voltage (Low) V CTL (L) V Operating current I DD 1 RF OFF, V CTL =1.8V 2.31 ma Operating current I DD 2 RF OFF, V CTL =V.4 ua Inverter current I INV 1 RF OFF, V CTL =1.8V 89.8 ua Inverter current I INV 2 RF OFF, V CTL =V 16.1 ua Control current I CTL RF OFF, V CTL =1.8V 3.4 ua 1
1-2-2 MEASURED DATA2 (LNA HIGH GAIN MODE) General conditions: V DD =V INV =2.7V, V CTL =1.8V, f RF =24MHz, T a =+2 o C, Z s =Z l =Ω with application circuit Parameter Symbol s Measurement data Operating current I DD RF OFF 2.21 ma Small signal gain Gain 1. db Isolation ISO -28. db Unit Noise figure Pin at 1dB compression point Input 3rd order intercept point NF Exclude PCB/Connector losses (.11dB) 1.39 db P-1dB(IN) -8. dbm IIP3 f1=f RF, f2=f RF +1kHz, Pin=-32dBm +2.3 dbm RF Input port VSWR VSWRi 1.87 RF Output port VSWR VSWRo 2.8 1-2-3 MEASURED DATA3 (LNA LOW GAIN MODE) General conditions: V DD =V INV =2.7V, V CTL =V, f RF =24MHz, T a =+2 o C, Z s =Z l =Ω with application circuit Parameter Symbol s Measurement data Unit Small signal gain Gain -6.9 db Isolation ISO -6.9 db Noise figure Pin at 1dB compression point Input 3rd order intercept point NF Exclude PCB/Connector losses (.11dB) 6.7 db P-1dB(IN) +1.2 dbm IIP3 f1=f RF, f2=f RF +1kHz, Pin=-16dBm +19.7 dbm RF Input port VSWR VSWRi 1.34 RF Output port VSWR VSWRo 1.12 2
1-3 APPLICATION CIRCUIT (Top View) RF IN L2 1.8nH L1 2.7nH RFIN GND 6 GND 4 RFOUT 3 GND 2 L4 4.3nH C1 4pF L3 1.nH C2 1pF RF OUT V DD =2.7V Bias Circuit V CTL =V or 1.8V VCTL 7 Logic Circuit GND 8 VINV 1 C3 1pF V INV =2.7V 1 Pin INDEX 1-4 PCB DESIGN (Top View) Parts List Parts ID Comment RF IN L1 L2 L4 C3 V DD C2 L3 C1 RF OUT L1~L3 L4 C1~C3 TAIYO-YUDEN (HK1 Series) MURATA (LQW1A Series) MURATA (GRM1 Series) V CT L V INV PCB (FR-4): t=.2mm MICROSTRIP LINE WIDTH =.4mm (Z =Ω) PCB SIZE=17.mm x 17.mm 3
1--1 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) 2 HB6 @High Gain Pout vs. Pin 2 HB6 @High Gain Gain, IDD vs. Pin 4 1 P-1dB(OUT)=+6.2dBm 1 Gain 3 Pout (dbm) -1 Pout Gain (db) 1 P-1dB(IN)=-8.dBm 2 1 IDD (ma) -2 IDD P-1dB(IN)=-8.dBm -3-4 -3-2 -1 1 V DD =V INV =2.7V, V CTL =1.8V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm -4-3 -2-1 1 V DD =V INV =2.7V, V CTL =1.8V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm Pout, IM3 (dbm) 2-2 -4-6 -8 OIP3=+17.9dBm Pout IM3 HB6 @High Gain Pout, IM3 vs. Pin IIP3=+2.3dBm -1-4 -3-2 -1 1 V DD =V INV =2.7V, V CTL =1.8V f RF =24+24.1MHz, Ta=+2 o C, Zs=Zl=ohm OIP3 (dbm) 21 2 19 18 17 16 1 14 OIP3 HB6 @High Gain OIP3, IIP3 vs. frequency 13 23 24 24 2 2 26 frequency (MHz) IIP3 V DD =V INV =2.7V, V CTL =1.8V f RF =23~26MHz, Offset=+1kHz Pin=-32dBm Ta=+2 o C, Zs=Zl=ohm 8 7 6 4 3 2 1 IIP3 (dbm) 4
1--2 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) NF (db) 4. 4 3. 3 2. HB6 @High Gain NF, Gain vs. frequency Gain 18 17 16 1 14 13 Gain (db) 2 12 NF 1. 11 (Exclude PCB, Connector Losses) 1 1 23 24 24 2 2 26 frequency (MHz) V DD =V INV =2.7V, V CTL =1.8V f RF =23~26MHz, Ta=+2 o C, Zs=Zl=ohm
1--3 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =1.8V, Zs=Zl=Ω S11, S22 Zin, Zout VSWRi, VSWRo S21, S12 6
1--4 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =1.8V, Zs=Zl=Ω S11, S22(f=MHz~2GHz) S21, S12(f=MHz~2GHz) 2 HB6 @High Gain k factor vs. frequency 1 k factor 1 1 1 2 frequency (GHz) V DD =V INV =2.7V, V CTL =1.8V f RF =MHz~2GHz, Ta=+2 o C, Zs=Zl=ohm 7
1-- TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) 1 HB6 @Low Gain Pout vs. Pin HB6 @Low Gain Gain, IDD vs. Pin 2 P-1dB(OUT)=+2.6dBm Pout (dbm) -1-2 -3-4 Pout P-1dB(IN)=+1.2dBm - -4-3 -2-1 1 2 V DD =V INV =2.7V, V CTL =V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm Gain (db) - -1-1 Gain P-1dB(IN)=+1.2dBm -2-4 -3-2 -1 1 2 V DD =V INV =2.7V, V CTL =V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm IDD 1 1 IDD (ua) 2 HB6 @Low Gain Pout, IM3 vs. Pin 1 HB6 @Low Gain OIP3, IIP3 vs. Pin 2 OIP3=+12.9dBm 14 24 13 23 Pout, IM3 (dbm) -2-4 -6 Pout OIP3 (dbm) 12 11 1 9 OIP3 IIP3 22 21 2 19 IIP3 (dbm) -8 IM3 IIP3=+19.7dBm -1-4 -3-2 -1 1 2 V DD =V INV =2.7V, V CTL =V f RF =24+24.1MHz, Ta=+2 o C, Zs=Zl=ohm 8 7 17 23 24 24 2 2 26 frequency (MHz) V DD =V INV =2.7V, V CTL =V f RF =23~26MHz, Offset=+1kHz Pin=-16dBm Ta=+2 o C, Zs=Zl=ohm 18 8
1--6 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) 13 12 11 HB6 @Low Gain NF, Gain vs. frequency Gain - -6-7 NF (db) 1 9 8 NF -8-9 -1 Gain (db) 7-11 6-12 (Exclude PCB, Connector Losses) -13 23 24 24 2 2 26 frequency (MHz) V DD =V INV =2.7V, V CTL =V f RF =23~26MHz, Ta=+2 o C, Zs=Zl=ohm 9
1--7 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =V, Zs=Zl=Ω S11, S22 Zin, Zout VSWRi, VSWRo S21, S12 1
1--8 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =V, Zs=Zl=Ω S11, S22(f=MHz~2GHz) S21, S12(f=MHz~2GHz) 2 HB6 @Low Gain k factor vs. frequency 1 k factor 1 1 1 2 frequency (GHz) V DD =V INV =2.7V, V CTL =V f RF =MHz~2GHz, Ta=+2 o C, Zs=Zl=ohm 11