Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %) Package Dimensions: 15. x 15. x.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram 1 5 1 9 8 7 General Description TriQuint s is a packaged high-power S-Band amplifier fabricated on TriQuint s TQGaN5.5 um GaN on SiC process. Operating from.1 to. GHz, the achieves 8 W saturated output power, a power-added efficiency of 5 %, and power gain of db. The is packaged in a 1-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 5 ohms allowing for simple system integration. The is ideally suited for both commercial and defense applications. Lead free and RoHS compliant. Evaluation Boards are available upon request. Pin Configuration Pad No. Ordering Information Part ECCN Description A1.b..a Symbol 1, 5 VG,, 7, 9 GND RFIN, 1 VD 8 RFOUT.1. GHz, 8 W GaN Power Amplifier Preliminary Datasheet: 9-18-1-1 of 1 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 C Input Power, CW, 5 Ω, (PIN) Input Power, CW, VSWR :1, VD = V,, (PIN) Value V -8 to V 1. A - to 8 ma 11 W dbm dbm Channel Temperature (TCH) 75 C Mounting Temperature ( Seconds) C Storage Temperature -55 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) pulsed: PW = 15 ms, DC = % V Drain Current (IDQ) ma Drain Current Under RF Drive (ID_DRIVE) See plots p. Gate Voltage (VG) V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See plots p. Temperature (TBASE) - to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted:, VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. Parameter Min Typical Max Units Operational Frequency Range.1. GHz Input Return Loss > 15 db Output Return Loss > 5 db Output Power (at PIN = 7 dbm) 9 dbm Power Added Efficiency (at PIN = 7 dbm) 5 % Power Gain (at PIN = 7 dbm) db Output Power Temperature Coefficient -.5 dbm/ C Preliminary Datasheet: 9-18-1 - of 1 - Disclaimer: Subject to change without notice
Thermal Resistance ( C/W) Power Dissipation (W) Median Lifetime, T M (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE = 85 C, VD = V, IDQ = ma 1.1 C/W Channel Temperature (TCH) (under RF drive) PW = 15 ms, DC = % Freq =. GHz, PIN = 7 dbm, POUT = 9 dbm 18 C Median Lifetime (TM) PDISS =8 W, ID_Drive = 5. A.E+8 Hrs Notes: 1. Thermal resistance measured to back of package. Test Conditions: VD = V; Failure Criteria = 1% reduction in ID_MAX 1E+18 1E+17 1E+1 1E+15 1E+1 1E+1 1E+1 1E+11 1E+1 1E+9 1E+8 1E+7 1E+ 1E+5 1E+ Median Lifetime vs. Channel Temperature FET1 5 5 75 1 15 15 175 5 5 75 Channel Temperature, T CH ( C) 1.5 Thermal Resistance vs. P DISS 85 P DISS vs. Frequency vs. T BASE 1. 8 1.15 75 1.1 7 1.5 5 Temp =, CW 1. 5 7 9 11 Power Dissipation (W) P IN = 7 dbm, Pulsed (PW = 15 ms, DC = %).8.....8. Preliminary Datasheet: 9-18-1 - of 1 - Disclaimer: Subject to change without notice
P OUT (dbm) P OUT (dbm) P OUT (dbm) P OUT (dbm) P OUT (dbm) Typical Performance: Large Signal Conditions unless otherwise specified: VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. 51 Output Power vs. Frequency vs. V D P IN = 7 dbm, Temp = 51 Output Power vs. Frequency vs. Temp. P IN = 7 dbm 5 5 9 9 8 8 7 V 8 V V V 7 5 5 5 1 Output Power vs. Input Power vs. Temp. PW = 1 µs, DC = 1%, Freq =. GHz, Temp = 5 1 15 5 51. 5.5 5. 9.5 9. 8.5 8. 7.5 Output Power vs. Input Power vs. Freq. PW = 1 µs, DC = 1%, Temp =.1 GHz. GHz.5 GHz 7..5. 8 5. 51.5 51. 5.5 5. 9.5 9. 8.5 8. Output Power vs. Input Power vs. Pulse Freq =. GHz, Temp = PW =.1 ms, DC = 1 % PW = 15 ms, DC = % 7.5 7. 5. 5.5..5 7. 7.5 8. Preliminary Datasheet: 9-18-1 - of 1 - Disclaimer: Subject to change without notice
Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) Typical Performance: Large Signal Conditions unless otherwise specified: VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. 58 5 5 PAE vs. Frequency vs. V D P IN = 7 dbm, Temp = Power Gain vs. Frequency vs. V D 5 5 V 8 8 V V V V 8 V 18 V V 1 P IN = 7 dbm, Temp = 1 58 5 5 PAE vs. Frequency vs. Temp. P IN = 7 dbm Power Gain vs. Frequency vs. Temp. P IN = 7 dbm 5 5 8 18 1 1 5 PAE vs. Input Power vs. Temp. PW = 1 µsec, DC = 1%, Freq =. GHz, Temp = 7 Power Gain vs. Input Power vs. Temp. 1 18 15 1 9 1 5 1 15 5 PW = 1 µsec, DC = 1%, Freq =. GHz, Temp = 5 1 15 5 Preliminary Datasheet: 9-18-1-5 of 1 - Disclaimer: Subject to change without notice
Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) Typical Performance: Large Signal Conditions unless otherwise specified: VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. Drain Current vs. Frequency vs. V D 8 Gate Current vs. Frequency vs. V D 5 V 8 V V V 8 18 1 V 8 V V V 8 P IN = 7 dbm, Temp =.9.1..5.7 P IN = 7 dbm, Temp = - Drain Current vs. Frequency vs. Temp. P IN = 7 dbm 8 Gate Current vs. Frequency vs. Temp. P IN = 7 dbm 5 8 18 1 8-5 Drain Current vs. Input Power vs. Temp. PW = 1 µsec, DC = 1%, Freq =. GHz, Temp = 1 8 Gate Current vs. Input Power vs. Temp. PW = 1 µs, DC = 1%, Freq =. GHz, Temp = 1 5 1 15 5-8 Preliminary Datasheet: 9-18-1 - of 1 - Disclaimer: Subject to change without notice
f (dbc) f (dbc) Typical Performance: Large Signal Conditions unless otherwise specified: VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. - -5 nd Harmonic vs. Frequency vs. P IN Temp = - -5 rd Harmonic vs. Frequency vs. P IN Temp = - - -5-5 - dbm 7 dbm - -5 dbm 7 dbm -5-5 -5-55 Preliminary Datasheet: 9-18-1-7 of 1 - Disclaimer: Subject to change without notice
S (db) S (db) S11 (db) S11 (db) S1 (db) S1 (db) Typical Performance: Small Signal Conditions unless otherwise specified: VD = V (PW = 15 ms, DC = %), IDQ = ma, VG = - V typical. Gain vs. Frequency vs. Temperature Gain vs. Frequency vs. Drain Current 1 1 ma ma -1 - V D = 8 V, CW -.5..5..5-1 - V D = 8 V, CW -.5..5..5 - - -9-1 IRL vs. Frequency vs. Temperature -15-18 -1 - -7 V D = 8 V, CW -.5..5..5 - - -9-1 -15-18 -1 - IRL vs. Frequency vs. Drain Current ma ma -7 V D = 8 V, CW -.5..5..5 - - -9-1 -15-18 -1 ORL vs. Frequency vs. Temperature - -7 V D = 8 V, CW -.5..5..5 - - -9-1 -15-18 ORL vs. Frequency vs. Drain Current ma ma -1 - -7 V D = 8 V, CW -.5..5..5 Preliminary Datasheet: 9-18-1-8 of 1 - Disclaimer: Subject to change without notice
Applications Information and Pin Layout C5 1-7uF C1.1uF R1 1 Ohms 1 1 C7.1uF R5 1 Ohms Vg RF IN 9 8 RF OUT Vd 7 C 1-7uF R 1 Ohms C.1uF 5 R 1 Ohms C8.1uF Bias-up Procedure 1. Set ID limit to 1 A, IG limit to ma. Apply 5 V to VG. Apply + V to VD; ensure IDQ is approx. ma. Adjust VG until IDQ = ma (VG ~ V Typ.). 5. Turn on RF supply Bias-down Procedure 1. Turn off RF supply. Reduce VG to 5 V; ensure IDQ is approx. ma. Set VD to V. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. RFIN Output; matched to 5 Ω; DC blocked,,7,9 GND Must be grounded on the PCB.,1 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Input; matched to 5 Ω; DC blocked Preliminary Datasheet: 9-18-1-9 of 1 - Disclaimer: Subject to change without notice
Evaluation Board GND Vg V D GND P1 C5 R C1 R1 RF IN R C C1 R1 C5 CP- EVB C11 R7 C9 C7 R5 RF OUT C7 R5 R C R C R C C R C 11197 REV A C1 R C8 C1 R8 R C8 P GND Vg V D GND Bill of Material NOTE: Both Top and Bottom Vd and Vg must be biased. Reference Des. Value Description Manuf. Part Number C1, C, C7, C8.1 μf Cap,, 5 V, 1%, X7R Various C5, C 7 μf Cap, 1, 5 V, %, X5R (1v is OK) Various R1, R, R5, R 1 Ohms Res,, 5V, 5% Various Res,, jumper required for the Various R, R Ohms above EVB design Preliminary Datasheet: 9-18-1-1 of 1 - Disclaimer: Subject to change without notice
Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully.. Nylock screws are recommended for mounting the to the board.. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or mils indium shim between the heat sink and the board.. Apply solder to each pin of the. 5. Clean the assembly with alcohol. Mechanical Information 1 5 1 9 8 7 Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Copper Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 81: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Preliminary Datasheet: 9-18-1-11 of 1 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD-A11 MSL Rating Level 5A at C convection reflow. The part is rated Moisture Sensitivity Level 5A at C per JEDEC standard IPC/JEDEC J-STD-. Solderability Compatible with the latest version of J-STD-, Leadfree solder, C RoHS Compliance This part is compliant with EU /95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H1Br) Free PFOS Free SVHC Free ECCN US Department of Commerce: A1.b..a Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.97.99.85 Email: info-sales@triquint.com Fax: +1.97.99.85 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: 9-18-1-1 of 1 - Disclaimer: Subject to change without notice