VN330SPTR-E. Quad high-side smart power solid-state relay. Description. Features

Similar documents
VNI2140. Dual high side smart power solid state relay. Description. Features

VN751PTTR. High-side driver. Description. Features

VN340SP-E. Quad high side smart Power solid state relay. Features. Description. PowerSO-10 TM

VN540-E/VN540SP-E. Single high-side smart power solid state relay. Description. Features

Table 1: Device summary. Order code Package Packing. PowerSSO12

IPS160H. Single high-side switch. Description. Features. Applications

Features. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel

STH275N8F7-2AG, STH275N8F7-6AG

Features. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel

VNI4140K. Quad high-side smart power solid-state relay. Features. Description

Features. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel

N-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features. Description

N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description

Features. Description. Table 1: Device summary Order code Marking Package Packaging STL220N6F7 220N6F7 PowerFLAT TM 5x6 Tape and reel

Features. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3

VN06SP HIGH SIDE SMART POWER SOLID STATE RELAY

Automotive-grade dual N-channel 30 V, 5.9 mω typ., 20 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package. Features.

N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab

Features. Description. Table 1: Device summary Order code Marking Package Packing STL3NK40 3NK40 PowerFLAT 5x5 Tape and reel

Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description

Features. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel

P-channel -30 V, 0.01 Ω typ., A, STripFET H6 Power MOSFET in an SO-8 package. Features. Description

Features. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel

Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI. Features. Description

Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary

Features. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package

Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description

VN31SP HIGH SIDE SMART POWER SOLID STATE RELAY

Obsolete Product(s) - Obsolete Product(s)

N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description

Automotive-grade N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description

Features. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel

Features. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing BU931P BU931P TO-247 Tube

IPS161HTR. Single high-side switch. Description. Features. Applications

Features. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.

Features. Description. Table 1: Device summary Order code Marking Package Packing STW56N65DM2 56N65DM2 TO-247 Tube

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing BU931T BU931T TO-220 Tube

Description. Table 1: Device summary

STB33N60DM2, STP33N60DM2, STW33N60DM2

Features. Description. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel

N-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.

Features. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube

L6375S. 0.5 A high-side driver intelligent power switch. Description. Features

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW45NM50 W45NM50 TO-247 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STB20N90K5 20N90K5 D²PAK Tape and reel

Features. Order code. Description. Table 1: Device summary Order code Marking Package Packing STL28N60DM2 28N60DM2 PowerFLAT 8x8 HV Tape and reel

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

STB13N60M2, STD13N60M2

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed. Features. Ignition. Description

Automotive P-channel -40 V, Ω typ., -57 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package. Features. Description

Features. Description. Table 1: Device summary Order code Marking Package Packing STP5N80K5 5N80K5 TO-220 Tube

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description

Features. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube

N-channel 600 V, 0.13 Ω typ., 21 A MDmesh DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features. Order code STB28N60DM2 STW28N60DM2

Prerelease Product(s) - Prerelease Product(s)

STGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB

LDLN ma ultra low noise LDO. Applications. Description. Features. Smartphones/tablets Image sensors Instrumentation VCO and RF modules

Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube

N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package. Features

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.

STGFW40V60DF, STGW40V60DF, STGWT40V60DF

N-channel 650 V, Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages. Features STP24N65M2.

N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.

Features. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary

Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube

Automotive-grade N-channel 400 V, Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package. Features. Description. Table 1: Device summary

Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STP18N60DM2 18N60DM2 TO-220 Tube

Automotive-grade N-channel 950 V, Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package. Features. Description.

N-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z

STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5

Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube

N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.

N-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

L A high-side driver quad intelligent power switch. Description. Features

Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel

STP3LN80K5, STU3LN80K5

Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube

STD12NF06LT4. N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package. Datasheet. Features. Applications.

N-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.

Features. Description. Table 1: Device summary. Order code Marking Package Packing STL24N60DM2 24N60DM2 PowerFLAT 8x8 HV Tape and reel

LDF. 1 A very low drop voltage regulator. Applications. Description. Features

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.

N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description

Features. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube

Transcription:

Quad high-side smart power solid-state relay Datasheet - production data Open drain diagnostic output Fast demagnetization of inductive loads Conforms to IEC 61131-2 Features Type Vdemag (1) RDS(on) (2) IOUT (1) VCC VN330SP-E VCC-55 V 0.32 Ω 0.7 A 36 V Notes: Per channel At TJ = 85 C Output current: 0.7 A per channel Digital input clamped at 32 V minimum voltage Shorted load and overtemperature protections Built-in current limiter Undervoltage shutdown Description The VN330SP-E is a monolithic device developed using the VIPower technology, intended to drive four independent resistive or inductive loads with one side connected to ground. Active current limitation prevents dropping of the system power supply in case of shorted load. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. The open drain diagnostic output indicates overtemperature conditions. Table 1: Device summary Order code Package Packing VN330SP-E VN330SPTR-E PowerSO-10 Tube Tape and reel February 2017 DocID11504 Rev 4 1/20 This is information on a product in full production. www.st.com

Contents VN330SP-E Contents 1 Block diagram... 5 2 Pin connection... 6 3 Maximum ratings... 7 4 Electrical characteristics... 8 5 Test circuits... 11 6 Switching time waveforms and truth table... 12 7 Package information... 14 7.1 PowerSO-10 package information... 14 7.2 PowerSO-10 packing information... 16 8 Revision history... 19 2/20 DocID11504 Rev 4

List of tables List of tables Table 1: Device summary... 1 Table 2: Absolute maximum ratings... 7 Table 3: Thermal data... 7 Table 4: Power section... 8 Table 5: Switching (VCC = 24 V)... 8 Table 6: Logic inputs... 9 Table 7: Protection and diagnostic... 10 Table 8: Truth table... 12 Table 9: PowerSO-10 package mechanical data... 15 Table 10: PowerSO-10 career tape dimension mechanical data... 16 Table 11: PowerSO-10 reel dimension mechanical data... 17 Table 12: PowerSO-10 base and bulk quantity in tape and reel... 17 Table 13: Document revision history... 19 DocID11504 Rev 4 3/20

List of figures List of figures VN330SP-E Figure 1: Block diagram... 5 Figure 2: Connection diagram (top view)... 6 Figure 3: Current and voltage conventions... 6 Figure 4: Avalanche energy test circuit... 11 Figure 5: Peak short-circuit test diagram... 11 Figure 6: Switching waveforms... 12 Figure 7: Switching parameter test conditions... 13 Figure 8: Driving circuit... 13 Figure 9: PowerSO-10 package outline... 14 Figure 10: PowerSO-10 career tape outline... 16 Figure 11: PowerSO-10 reel outline... 17 Figure 12: PowerSO-10 suggested pad and tube shipment (no suffix)... 18 4/20 DocID11504 Rev 4

Block diagram 1 Block diagram Figure 1: Block diagram DocID11504 Rev 4 5/20

Pin connection VN330SP-E 2 Pin connection Figure 2: Connection diagram (top view) Figure 3: Current and voltage conventions VCC IIN1 VIN1 10 11 VCC VIN2 IIN2 9 IN2 IN1 OUT1 1 IOUT1 VOUT1 VIN3 IIN3 8 IN3 OUT2 2 IOUT2 VOUT2 VIN4 IIN4 7 IN4 OUT3 3 IOUT3 VOUT3 IDIAG VDIAG 6 DIAG GND 5 OUT4 4 IOUT4 VOUT4 6/20 DocID11504 Rev 4

Maximum ratings 3 Maximum ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCC Power supply voltage 45 V -VCC Reverse supply voltage -0.3 V IOUT Output current Internally limited A IR Reverse output current (per channel) -6 A IIN Input current range ±10 ma IDIAG DIAG pin current ±10 ma VESD Electrostatic discharge (R = 1.5 kω; C = 100 pf) 2000 V EAS Single pulse avalanche energy per channel not simultaneously 400 mj PTOT Power dissipation at TC = 25 C Internally limited W TJ Junction operating temperature Internally limited C TSTG Storage temperature -55 to 150 C Table 3: Thermal data Symbol Parameter Value Unit Rth(JC) Thermal resistance junction-case (1) Max. 2 C/W Rth(JA) Thermal resistance junction-ambient (2) Max. 50 C/W Notes: (1) Per channel. (2) When mounted on a four-layer FR-4, with the minimum recommended pad size. DocID11504 Rev 4 7/20

Electrical characteristics VN330SP-E 4 Electrical characteristics 10 V < VCC < 36 V; -40 C < TJ < 125 C; unless otherwise specified Table 4: Power section Symbol Parameter Test conditions Min. Typ. Max. Unit VCC Supply voltage 10 36 V IOUT = 0.5 A at TJ = 25 C 0.2 RDS(on) On-state resistance IOUT = 0.5 A at TJ = 85 C 0.32 IOUT = 0.5 A at TJ = 125 C 0.44 Ω IS Supply current All channels OFF On-state VIN = 5 V, IOUT = 0 V, TJ = -40 C 1 ma 15 ma Vdemag Output voltage at turn-off IOUT = 0.5 A; LLOAD >= 1 mh VCC-65 VCC-55 VCC-45 V Table 5: Switching (VCC = 24 V) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 25 C IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 125 C 30 40 60 µs tr Rise time of output current IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 25 C IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 125 C 50 100 115 µs td(off) Turn-off delay time of output current IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 25 C IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 125 C 20 30 40 µs tf Fall time of output current IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 25 C IOUT = 0.5 A, resistive load, input rise time < 0.1 µs, TJ = 125 C 8 15 20 µs (di/dt)on Turn-on current slope IOUT = 0.5 A 0.5 IOUT = ILIM, TJ = 25 C 2 A/µs 8/20 DocID11504 Rev 4

Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit (di/dt)off Turn-off current slope IOUT = 0.5 A 2 IOUT = ILIM, TJ = 25 C 4 A/µs Table 6: Logic inputs Symbol Parameter Test conditions Min. Typ. Max. Unit VIL VIH VI(HYST) Input low level voltage Input high level voltage Input hysteresis voltage 2 V 3.5 V 0.5 V IIN Input current VIN = 0 to 30 V 600 µa ILGND Output current in ground disconnection VICL Input clamp voltage (1) Notes: VCC= VINn = GND = DIAG = 24 V; TJ = 25 C 25 ma IIN = 1 ma 32 36 V IIN = -1 ma -0.7 V (1) The input voltage is internally clamped at 32 V minimum, the input pins can be connected to a higher voltage by an external resistor, which cannot exceed 10 ma DocID11504 Rev 4 9/20

Electrical characteristics Table 7: Protection and diagnostic VN330SP-E Symbol Parameter Test conditions Min. Typ. Max. Unit VDIAG (1) VSCL (1) VUSD VOL ILIM IOVPK IDIAGH ILOAD tsc TTSD TR Notes: Status voltage output low Status clamp voltage Undervoltage shutdown Low state output voltage DC short-circuit current Peak short-circuit current Leakage on DIAG pin in high state Output leakage current Delay time of current limiter Thermal shutdown temperature Thermal reset temperature IDIAG = 5 ma (fault condition) 1 IDIAG = 1 ma 32 36 IDIAG = -1 ma -0.7 V 5 8 V VIN = VIL; RLOAD < 10 mω 1.5 V VCC = 24 V; RLOAD < 10 mω 0.7 2.5 A VCC = 24 V; VIN = 30 V; RLOAD < 10 mω (1) Status determination > 100 μs after the switching edge. 4 A VDIAG = 24 V 100 μa VCC = 10 to 36 V; VIN=VIL 50 μa 100 μs 150 170 C 135 155 C If the INPUT pin is left floating, the corresponding channel automatically switches off. If GND pin is disconnected, the channel switches off provided that VCC does not exceed 36 V. 10/20 DocID11504 Rev 4

Test circuits 5 Test circuits Figure 4: Avalanche energy test circuit +VCC 10 k Ω IN DIAG OUTPUT CONTROL UNIT RIN GND LOAD GND Figure 5: Peak short-circuit test diagram +VCC 10kΩ IN DIAG OUTPUT CONTROL UNIT RIN GND RL < 10m Ω GND DocID11504 Rev 4 11/20

Switching time waveforms and truth table VN330SP-E 6 Switching time waveforms and truth table Table 8: Truth table Conditions INPUTn OUTPUTn Diagnostic Normal operation L L H H H H Overtemperature L L H H L L Undervoltage L L H H L H Shorted load current limitation L L H H H H Figure 6: Switching waveforms 12/20 DocID11504 Rev 4

Figure 7: Switching parameter test conditions Switching time waveforms and truth table Figure 8: Driving circuit DocID11504 Rev 4 13/20

Package information VN330SP-E 7 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 7.1 PowerSO-10 package information Figure 9: PowerSO-10 package outline E3 E1 L A1 R2 E R1 R1 MAL A28 E2 A3 A2 7152835 rev.g 14/20 DocID11504 Rev 4

Package information Table 9: PowerSO-10 package mechanical data mm Dim. Min. Typ. Max. A1 0 0.05 0.1 A2 3.4 3.5 3.6 A3 1.2 1.3 1.4 A4 0.15 0.2 0.25 a 0.2 b 0.37 0.45 0.53 c 0.23 0.27 0.32 D 9.4 9.5 9.6 D1 7.4 7.5 7.6 d 0 0.05 0.1 E 13.85 14.1 14.35 E1 (1) 9.3 9.4 9.5 E2 7.3 7.4 7.5 E3 5.9 6.1 6.3 e 1.27 e1 5.08 F 0.5 G 1.2 L 0.8 1 1.1 R1 0.25 R2 0.8 T 2 deg 5 deg 8 deg T1 6 deg T2 10 deg Notes: (1) Resin protrusions are not included (max. value 0.15 mm per side) DocID11504 Rev 4 15/20

Package information 7.2 PowerSO-10 packing information Figure 10: PowerSO-10 career tape outline VN330SP-E Drawing is not in scale Table 10: PowerSO-10 career tape dimension mechanical data mm Dim. Min. Typ. Max. A0 14.9 15.0 15.1 B0 9.9 10.0 10.1 K0 4.15 4.25 4.35 F 11.4 11.5 11.6 E 1.65 1.75 1.85 W 23.7 24.0 24.3 P2 1.9 2.0 2.1 P0 3.9 4.0 4.1 P1 23.9 24.0 24.1 T 0.025 0.30 0.35 D(Ø) 1.50 1.55 1.60 10 sprocket hole pitch cumulative tolerance ±0.2 mm 16/20 DocID11504 Rev 4

Figure 11: PowerSO-10 reel outline 40 mm min. Package information T Access hole At slot location B D A C N Full radius Tape slot In core for Tape start 2.5 mm min. width G measured At hub Drawing is not in scale Table 11: PowerSO-10 reel dimension mechanical data mm Dim. Min. Typ. Max. A 330 B 1.5 C 12.8 13 13.2 D 20.2 N 60 G 23.7 24.4 T 30.4 Table 12: PowerSO-10 base and bulk quantity in tape and reel Base quantity Bulk quantity 600 600 DocID11504 Rev 4 17/20

Package information Figure 12: PowerSO-10 suggested pad and tube shipment (no suffix) VN330SP-E 10 sprocket hole pitch cumulative tolerance ±0.2 mm 18/20 DocID11504 Rev 4

Revision history 8 Revision history Table 13: Document revision history Date Revision Changes 06-Sep-2005 1 Initial release. 31-Oct-2006 2 Typo in electrical characteristics temperature conditions updated on page 5 27-Mar-2007 3 Document reformatted, typo in Note 1 on page 6 14-Feb-2017 4 Updated Table 4: "Power section". Inserted Figure 12: "PowerSO-10 suggested pad and tube shipment (no suffix)". DocID11504 Rev 4 19/20

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2017 STMicroelectronics All rights reserved 20/20 DocID11504 Rev 4