Conversion Gain (db) RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The is a multifunction monolithic circuit, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control. It is designed for a wide range of applications, typically ISM and commercial communication systems. The circuit is manufactured with a phemt process,.µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features Broadband RF performance 17-7GHz 1dB conversion gain 3dBm Input IP3 1dB Gain Control 1dBc Image Rejection DC bias: Vd=.Volt @ Id=3mA L-QFNx MSL1 1 1 1 1 - - UMS R3 YYWW - USB_Gcx=-1,V USB_Gcx=V - LSB_Gcx=-1,V LSB_Gcx=V - 1 17 1 19 1 3 7 Main Characteristics Tamb.= + C, Vd =.V Symbol Parameter Min Typ Max Unit F RF RF frequency range 17. GHz F OL LO frequency range 7 1 GHz F IF IF frequency range DC 3. GHz G C Conversion Gain 1 db Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 1 - BP - 911 Orsay Cedex France Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Main Characteristics Tamb = + C, VD = VDL =.V Symbol Parameter Min Typ Max Unit F RF RF frequency range 17. GHz F OL LO frequency range 7 1 GHz F IF IF frequency range DC 3. GHz G C Conversion Gain @ min. attenuation 1 db G Gain control range 1 db NF Noise Figure @ min. att. from 17 to GHz, for IF>.1GHz 3.3 3. db Noise Figure @ min. att. from to.ghz, for IF>.1GHz.1. db Im_rej Image rejection (1) 1 dbc P LO LO Input power dbm IIP3 Input IP3 @ min. attenuation 1 3 dbm Input IP3 @ all gain range ( G) - - dbm LO/RF LO leakage at RF port @ max. gain - dbc VD, VDL DC drain voltage. V ID Drain current on VD ma IDL Drain current on VDL 7 ma VGL LNA DC gate voltage () -. V GC,3 Gain control DC voltage - -1. +. V VGM Mixer DC gate voltage -.7 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". (1) An external combiner 9 is required on I / Q. () Typical VGL value for IDL = 7mA See in paragraph biasing option other possibility to optimise differently the performances Note: Id is not affected by gain control (GC, GC3). Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Absolute Maximum Ratings (1) Tamb.= + C Symbol Parameter Values Unit Vd Drain bias voltage V ID+IDL Drain bias current ma VGL LNA DC gate voltage - to +. V VGM Mixer DC gate voltage - to +. V GC,3 Gain control voltage - to +. V P RF Maximum peak input power overdrive dbm P LO Maximum LO input power dbm Tj Junction temperature () 17 C Ta Operating temperature range - to + C Tstg Storage temperature range - to +1 C (1) Operation of this device above anyone of these parameters may cause permanent damage. () See Device thermal performances Typical Bias Conditions Tamb.= + C Symbol Pad N o Parameter Values Unit VDL, VD, 1 DC drain voltages. V ID+IDL, 1 Total drain current 3 ma VGL 9 DC gate voltage -. V VGM 11 DC gate voltage -.7 V GC, GC3 7, Gain control DC voltage - to +. V Ref. : DS119-11 Jul 11 3/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature cannot be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : Recommended max. junction temperature (Tj max) : 1 C Junction temperature absolute maximum rating : 17 C Max. continuous dissipated power (Pdiss. Max.) : 1.3 W => Pdiss. Max. derating above Tcase (1) = C : 33 mw/ C Junction-Case thermal resistance (Rth J-C) () : <3 C/W Minimum Tcase operating temperature (3) : - C Maximum Tcase operating temperature (3) : C Minimum storage temperature : - C Maximum storage temperature : 1 C (1) Derating at junction temperature constant = Tj max. () Rth J-C is calculated for a worst case considering the ho ttest junctio n of the M M IC and all the devices biased. (3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below). Pdiss. Max. @Tj <Tj max (W) - - 7 1 1 Tcase ( C) 1. 1. 1.... Pdiss. Max. @Tj <Tj max (W) Tcase Example: QFN 1L 3x3 Location of temeprature reference point (Tcase) on package's bottom side. Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Conversion Gain (db) Conversion Gain (db) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm If no specific mention, the following values are representative of onboard measurements (on connector access planes) as defined on the drawing at paragraph Evaluation mother board. The board losses are estimated from 1. to db in the frequency range. Conversion Gain in Supradyne Mode versus RF Frequency & GCx F_RF = xf_lo+f_if, F_IF =.GHz Board losses de-embedded (result given on package access planes) 1 1 1 1 - - - - - 1 17 1 19 1 3 7 1 1 1 1 - - - - GCx=-1,V GCx=-,7V GCx=-,V GCx=-,V GCx=V Conversion Gain in Infradyne Mode versus RF Frequency & GCx RF = xf_lo-f_if, F_IF =.GHz Board losses de-embedded (result given on package access planes) GCx=-1,V GCx=-,7V GCx=-,V GCx=-,V GCx=V - 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Conversion Gain (db) Conversion Gain (db) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 1 1 1 1 - - - - Conversion Gain in Supradyne Mode versus RF Frequency & IF F_RF = xf_lo+f_if, GCx = -1.V & V Board losses de-embedded (result given on package access planes) - 1 17 1 19 1 3 7 1 1 1 1 - - - - att. min. @GHz att.min. @3.GHz att. max. @GHz att. max. @3.GHz Conversion Gain in Infradyne Mode versus RF Frequency & IF RF = xf_lo-f_if, GCx = -1. & V Board losses de-embedded (result given on package access planes) att. min. @GHz att.min. @3.GHz - 1 17 1 19 1 3 7 att. max. @GHz att. max. @3.GHz Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Noise Figure (db) Dynamique Range (db) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm Dynamic Range (Gcmax Gcmin) versus Frequency F_RF = xf_lo-f_if & F_RF = xf_lo+f_if, F_IF =.GHz 1 1 1 1 USB LSB 1 17 1 19 1 3 7 Noise Figure at min. att. versus Frequency F_RF = xf_lo-f_if & F_RF = xf_lo+f_if, F_IF =.GHz, GCx = -1.V Board losses de-embedded (result given on package access planes) 9 7 3 1 USB LSB 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 7/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Image Rejection (db) Image Rejection (db) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 3 Image Rejection on Supradyne & Infradyne Mode versus Frequency F_IF =.GHz, GCx = -1.V 3 1 USB LSB 1 17 1 19 1 3 7 3 Image Rejection on Supradyne & Infradyne Mode versus Frequency F_IF = 3.GHz, GCx = -1.V 3 1 USB LSB 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Input IP3 (dbm) Input IP3 (dbm) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 1 Input IP3 versus Frequency at GCx = -1.V F_RF = xf_lo+f_if, F_IF = 3.GHz 1 1 - -.GHz 3.GHz.GHz - -7 - -3-1 -19-17 -1-13 -11-9 Input Power DCL (dbm) 1 Input IP3 versus GCx F_RF = xf_lo+f_if, F_RF =.GHz, F_IF = 3.GHz 1 1 - - -1.V -.V -.7V -.V -.V V - -7 - -3-1 -19-17 -1-13 -11-9 Input Power DCL (dbm) Ref. : DS119-11 Jul 11 9/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
IMD3 (dbc) IMD3 (dbc) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 7 7 3 3 1 IMD3 versus Frequency at GCx = -1.V F_RF = xf_lo+f_if, F_IF = 3.GHz -7 - -3-1 -19-17 -1-13 -11-9 7 7 3 3 1.GHz 3.GHz.GHz Input Power DCL (dbm) IMD3 versus GCx F_RF = xf_lo+f_if, F_RF =.GHz, F_IF = 3.GHz -1.V -.V -.7V -.V -.V V -7 - -3-1 -19-17 -1-13 -11-9 Input Power DCL (dbm) Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
IMD (dbc) IMD (dbc) IMD (dbc) IMD (dbc) Typical Board Measurements Tamb = + C, VD = VDL =.V, VGL = -.V, VGM -.7V, P_LO = dbm IMD versus Input power USB lower tone F_IF =.GHz IMD versus Input power USB higher tone F_IF =.GHz 3 3 3 3 1 1GHz GHz GHz -3-3 -3 - - - - - -1-1 -1 Input Power DCL (dbm) 1 1GHz GHz GHz -3-3 -3 - - - - - -1-1 -1 Input Power DCL (dbm) IMD versus Input power LSB lower tone F_IF =.GHz IMD versus Input power LSB higher tone F_IF =.GHz 3 3 3 3 1 1GHz GHz GHz -3-3 -3 - - - - - -1-1 -1 Input Power DCL (dbm) 1 1GHz GHz GHz -3-3 -3 - - - - - -1-1 -1 Input Power DCL (dbm) Spurious on IF outputs RF = LO IF P_RF = -dbm / P_LO = dbm @GHz nlo mrf 1 3 Xx 3 1 3 3 3 1 1 1 3 1 >7 >7 >7 3 3 >7 >7 >7 >7 >7 >7 >7 >7 >7 >7 >7 >7 All values in dbc below IF power level (IF = 1GHz). Data measured without external hybrid coupler. Ref. : DS119-11 Jul 11 11/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Conversion Gain (db) Conversion Gain (db) Temperature Board Measurements T = [-, +, ] C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm If no specific mention, the following values are representative of on board measurements (on connector access planes) as defined on the drawing at paragraph Evaluation mother board. The board losses are estimated from 1. to db in the frequency range. Conversion Gain in Supradyne Mode versus Frequency F_RF = xf_lo+f_if, F_IF =.GHz, GCx = -1.V & V Board losses de-embedded (result given on package access planes) 1 1 1 1 - - - - att.min. @ C att. min. @ C att. min. @-C att. max. @ C att. max. @ C att. max. @- C - 1 17 1 19 1 3 7 Conversion Gain in Infradyne Mode versus Frequency RF = xf_lo-f_if, F_IF =.GHz, GCx = -1.V & V Board losses de-embedded (result given on package access planes) 1 1 1 1 - - - - att.min. @ C att. min. @ C att. min. @- C att. max. @ C att. max. @ C att. max. @- C - 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Noise Figure (db) Noise Figure (db) Temperature Board Measurements T = [-, +, ] C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm Noise Figure in Supradyne Mode at min. att. versus Frequency F_RF = xf_lo+f_if, F_IF =.GHz, GCx = -1.V Board losses de-embedded (result given on package access planes) 9 7 3 1 C C - C 1 17 1 19 1 3 7 Noise Figure in Infradyne Mode at min. att. versus Frequency F_RF = xf_lo-f_if, F_IF =.GHz, GCx = -1.V Board losses de-embedded (result given on package access planes) 9 7 3 1 C C - C 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 13/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Dynamic Range (db) Dynamic Range (db) Temperature Board Measurements T = [-, +, ] C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm Dynamic Range (Gcmax Gcmin) in Supradyne Mode versus Frequency F_RF = xf_lo+f_if, F_IF =.GHz 1 1 1 1 C C -C 1 17 1 19 1 3 7 Dynamic Range (Gcmax Gcmin) in Infradyne Mode versus Frequency F_RF = xf_lo-f_if, F_IF =.GHz 1 1 1 1 C C -C 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Image Rejection (db) Image Rejection (db) Temperature Board Measurements T = [-, +, ] C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 3 Image Rejection on Supradyne Mode versus Frequency F_IF =.GHz, GCx = -1.V 3 1 C C - C 1 17 1 19 1 3 7 3 Image Rejection on Infradyne Mode versus Frequency F_IF =.GHz, GCx = -1.V 3 1 C C - C 1 17 1 19 1 3 7 Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
IMD3 (dbc) Input IP3 (dbm) Temperature Board Measurements T = [-, +, ] C, VD = VDL =.V, VGL = -.V, VGM = -.7V, P_LO = dbm 1 Input IP3 versus Temperature at GCx = -1.V F_RF = xf_lo+f_if, F_RF =.GHz, F_IF = 3.GHz 1 1 - - C C - C - -7 - -3-1 -19-17 -1-13 -11-9 Input Power DCL (dbm) 7 7 3 3 1 IMD3 versus Temperature at GCx = -1.V F_RF = xf_lo+f_if, F_RF =.GHz, F_IF = 3.GHz C C - C -7 - -3-1 -19-17 -1-13 -11-9 Input Power DCL (dbm) Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Package outline (1) Matt tin, Lead Free (Green) 1- Nc 9- VGL 17- Nc Units : mm - Nc - VDL 1- Nc From the standard : JEDEC MO- 3- Nc 11- VGM 19- Nc (VGGD) - GND () 1- VD - IF_I out - GND - RF in 13- Nc 1- GND () - GND () 1- GND () - IF_Q out 7- GC3 1- LO in 3- Nc - GC 1- GND () - Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN17 (http://www.ums-gaas.com) for exact package dimensions. () It is strongly recommended to ground all pins marked Gnd through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DS119-11 Jul 11 17/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Evaluation mother board Compatible with the proposed footprint. Based on typically Ro3 / mils or equivalent. Using a micro-strip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Decoupling capacitors of nf ±% are recommended for all DC accesses. See application note AN17 for details. GC3 GC VGL VDL VGM VD Decoupling Capacitors = nf Hybrid coupler 9 -GHz Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
NC NC NC GND RF IN GND GC3 NC NC NC GND LO IN GND NC Notes Due to ESD protection circuits on RF and LO inputs, an external capacitance might be requested to isolate the product from external voltage that could be present on these accesses in the application. 19 1 17 1 1 1 13 IF_I 1 VD GND IF_Q 1 X 11 VGM VDL NC 3 9 VGL NC GC 1 3 7 ESD protections are implemented on gate accesses. The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package. Ref. : DS119-11 Jul 11 19/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
DC Schematic LNA (.V, 7mA) Vd=.V k 17 1mA ma 3mA 3.k 3.3k Vg~ -.V Vd=.V LO Buffer (.V, ma) ma ma ma ma 1k 9 1k. 1 1.k 1 1 9 7. 19 1 Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Biasing Options In order to improve the conversion gain and the noise figure, the biasing could be tuned. VGL voltage allows controlling IDL current. Table below gives the typical value for main characteristics VD=VDL=.V IDL= 7mA VD=VDL=.V IDL= 1mA Conversion Gain@min. att. (db) 1 13 Noise Figure@ min. att. from 17 to GHz (db) 3.3 3. Input IP3@min. att. (dbm) +3 + VGL (V) -. -. ID (ma) ID + IDL (ma) 3 3 Total DC power consumption (mw) 1 1 Ref. : DS119-11 Jul 11 1/ Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9
Recommended package footprint Refer to the application note AN17 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN17. Recommended environmental management Refer to the application note AN19 available at http://www.ums-gaas.com for environmental data on UMS package products. Recommended ESD management Refer to the application note AN available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN x RoHS compliant package: /XY Stick: XY = Tape & reel: XY = 1 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DS119-11 Jul 11 / Specifications subject to change without notice Route Départementale 1, BP - 911 ORSAY Cedex - FRANCE Tel.: +33 () 1 9 33 3 - Fax: +33 () 1 9 33 3 9