MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler

Similar documents
BAT54SWT1G / BAT54CWT1G Schottky Diodes

BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes

FJV42 NPN High-Voltage Transistor

FJB102 NPN High-Voltage Power Darlington Transistor

TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor

KSA1281 PNP Epitaxial Silicon Transistor

FJP13007 High Voltage Fast-Switching NPN Power Transistor

TIP147T PNP Epitaxial Silicon Darlington Transistor

FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor

BC327 PNP Epitaxial Silicon Transistor

MOC8021M, MOC8050M 6-Pin DIP Photodarlington Optocoupler (No Base Connection)

KSP2222A NPN General-Purpose Amplifier

MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

1N4934-1N4937 Fast Rectifiers

TIP102 NPN Epitaxial Silicon Darlington Transistor

KSC2383 NPN Epitaxial Silicon Transistor

LL4148 Small Signal Diode

FJP13009 High-Voltage Fast-Switching NPN Power Transistor

BAT54HT1G Schottky Barrier Diodes

FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor

FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin

Part Number Top Mark Package Packing Method

FODM121 Series, FODM124, FODM2701, FODM Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers

FJA13009 High-Voltage Switch Mode Application

H11AA1M, H11AA4M 6-Pin DIP AC Input Phototransistor Optocouplers

QED223 Plastic Infrared Light Emitting Diode

QEE113 Plastic Infrared Light Emitting Diode

FIN1002 LVDS 1-Bit, High-Speed Differential Receiver

FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode

4N38M, H11D1M, H11D3M, MOC8204M 6-Pin DIP High Voltage Phototransistor Optocouplers

BAV103 High Voltage, General Purpose Diode

KSC1815 NPN Epitaxial Silicon Transistor

2N5550 NPN Epitaxial Silicon Transistor

FGD V PDP Trench IGBT

J105 / J106 / J107 N-Channel Switch

FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode

FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor

BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor

BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor

KSC1815 NPN Epitaxial Silicon Transistor

BAS16 Small Signal Diode

QRE1113, QRE1113GR Miniature Reflective Object Sensor

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

KSD1616A NPN Epitaxial Silicon Transistor

KSD1621 NPN Epitaxial Silicon Transistor

KSC1845 NPN Epitaxial Silicon Transistor

2N7000BU / 2N7000TA Advanced Small-Signal MOSFET

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch

KSA473 PNP Epitaxial Silicon Transistor

FGH75N60UF 600 V, 75 A Field Stop IGBT

2N6517 NPN Epitaxial Silicon Transistor

FGPF V PDP Trench IGBT

MMBT3906SL PNP Epitaxial Silicon Transistor

FGH30S130P 1300 V, 30 A Shorted-anode IGBT

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013

J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

KSP44 / KSP45 NPN Epitaxial Silicon Transistor

2N7002W N-Channel Enhancement Mode Field Effect Transistor

FQD7N30 N-Channel QFET MOSFET

FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT

KSH122 / KSH122I NPN Silicon Darlington Transistor

FGD V, PDP IGBT

FYP2010DN Schottky Barrier Rectifier

PN2907 / MMBT2907 PNP General-Purpose Transistor

KSP44/45 NPN Epitaxial Silicon Transistor

KSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62.

FFD10UP20S 10 A, 200 V, Ultrafast Diode

LM317M 3-Terminal 0.5A Positive Adjustable Regulator

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

FGH40N60UFD 600 V, 40 A Field Stop IGBT

MJD44H11 NPN Epitaxial Silicon Transistor

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

FQD7P20 P-Channel QFET MOSFET

CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BV CEO Phototransistor Optocouplers

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

FQD5N15 N-Channel QFET MOSFET

F G D3325G2_F FGD3325G2_F085

Features. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM

RHRP1540, RHRP A, 400 V V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

FGA180N33ATD 330 V PDP Trench IGBT

LP2951 Adjustable Micro-Power Voltage Regulator

HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers

KA431 / KA431A / KA431L Programmable Shunt Regulator

FGA50N100BNTD V NPT Trench IGBT

MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor

BC638 PNP Epitaxial Silicon Transistor

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler

2N5551 / MMBT5551 NPN General-Purpose Amplifier

FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

Description. 300 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +175 C

Transcription:

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler Features Closely Matched Current Transfer Ratios Minimum BV CEO of 70 V Guaranteed MOCD207M, MOCD208M Minimum BV CEO of 30 V Guaranteed MOCD211M, MOCD213M, MOCD217M Low LED Input Current Required for Easier Logic Interfacing MOCD217M Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing Safety and Regulatory Approvals: UL1577, 2,500 VAC RMS for 1 Minute DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications Feedback Control Circuits Interfacing and Coupling Systems of Different Potentials and Impedances General Purpose Switching Circuits Monitor and Detection Circuits Description May 2016 These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting. Schematic Package Outline ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 7 EMITTER 1 ANODE 2 3 6 COLLECTOR 2 Figure 2. Package Outline CATHODE 2 4 5 EMITTER 2 Figure 1. Schematic MOCD2xxM Rev. 4.10

Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Note: 1. Safety limit values maximum values allowed in the event of a failure. Characteristics Installation Classifications per DIN VDE < 150 V RMS I IV 0110/1.89 Table 1, For Rated Mains Voltage < 300 V RMS I III Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x 1.6 = V PR, Type and Sample Test with t m = 10 s, Partial Discharge < 5 pc 904 V peak Input-to-Output Test Voltage, Method B, V IORM x 1.875 = V PR, 100% Production Test with t m = 1 s, Partial Discharge < 5 pc 1060 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 4000 V peak External Creepage 4 mm External Clearance 4 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T S Case Temperature (1) 150 C I S,INPUT Input Current (1) 200 ma P S,OUTPUT Output Power (1) 300 mw R IO Insulation Resistance at T S, V IO = 500 V (1) > 10 9 MOCD2xxM Rev. 4.10 2

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C unless otherwise specified. Symbol Rating Value Unit TOTAL DEVICE T STG Storage Temperature -40 to +125 C T A Ambient Operating Temperature -40 to +100 C T J Junction Temperature -40 to +125 C T SOL Lead Solder Temperature 260 for 10 seconds C Total Device Power Dissipation @ T A = 25 C 240 mw P D Derate Above 25 C 2.94 mw/ C EMITTER I F Continuous Forward Current 60 ma I F (pk) Forward Current Peak (PW = 100 µs, 120 pps) 1.0 A V R Reverse Voltage 6.0 V LED Power Dissipation @ T A = 25 C 90 mw P D Derate Above 25 C 0.8 mw/ C DETECTOR I C Continuous Collector Current 150 ma V CEO Collector-Emitter Voltage MOCD207M, MOCD208M, MOCD213M 70 V MOCD211M, MOCD217M 30 V V ECO Emitter-Collector Voltage 7 V Detector Power Dissipation @ T A = 25 C 150 mw P D Derate Above 25 C 1.76 mw/ C MOCD2xxM Rev. 4.10 3

Electrical Characteristics T A = 25 C unless otherwise specified. Symbol Parameter Device Test Conditions Min. Typ. Max. Unit EMITTER MOCD217M I F = 1 ma 1.05 1.3 V MOCD213M I F = 10 ma 1.15 1.5 V V F Input Forward Voltage MOCD207M, MOCD208M, I F = 30 ma 1.25 1.5 V MOCD211M I R Reverse Leakage Current All V R = 6 V 0.001 100 µa C IN Input Capacitance All 18 pf DETECTOR I CEO Collector-Emitter Dark Current All BV CEO Collector-Emitter Breakdown Voltage V CE = 10 V, T A = 25 C 1.0 50 na V CE = 10 V, T A = 100 C 1.0 µa MOCD211M, MOCD217M I C = 100 µa 30 100 V MOCD207M, MOCD208M, MOCD213M I C = 100 µa 70 100 V BV ECO Emitter-Collector Breakdown Voltage All I E = 100 µa 7 10 V C CE Collector-Emitter Capacitance All f = 1.0 MHz, V CE = 0 7 pf COUPLED CTR V CE(SAT) Collector-Output Current Collector-Emitter Saturation Voltage t on Turn-On Time All t off Turn-Off Time All t r Rise Time All t f Fall Time All MOCD207M I F = 10 ma, V CE = 5 V 100 200 % MOCD208M I F = 10 ma, V CE = 5 V 40 125 % MOCD211M I F = 10 ma, V CE = 5 V 20 % MOCD213M I F = 10 ma, V CE = 5 V 100 % MOCD217M I F = 1 ma, V CE = 5 V 100 % MOCD207M, MOCD208M, MOCD211M, MOCD213M I C = 2 ma, I F = 10 ma 0.4 V MOCD217M I C = 100 µa, I F = 1 ma 0.4 V I C = 2 ma, V CC = 10 V, R L = 100 (Figure 8) I C = 2 ma, V CC = 10 V, R L = 100 (Figure 8) I C = 2 ma, V CC = 10 V, R L = 100 (Figure 8) I C = 2 ma, V CC = 10 V, R L = 100 (Figure 8) 7.5 µs 5.7 µs 3.2 µs 4.7 µs MOCD2xxM Rev. 4.10 4

Electrical Characteristics T A = 25 C unless otherwise specified. Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit V ISO Input-Output Isolation Voltage t = 1 Minute 2500 VAC RMS C ISO Isolation Capacitance V I-O = 0 V, f = 1 MHz 0.2 pf R ISO Isolation Resistance V I-O = ±500 VDC, T A = 25 C 10 11 MOCD2xxM Rev. 4.10 5

Typical Performance Curves V F FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 T A = 55 C 1.3 1.2 T A = 25 C 1.1 T A = 100 C 1.0 1 10 100 I F LED FORWARD CURRENT (ma) Figure 3. LED Forward Voltage vs. Forward Current I C OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25 C 0.1-80 -60-40 -20 0 20 40 60 80 100 120 T A AMBIENT TEMPERATURE ( C) Figure 5. Output Current vs. Ambient Temperature I C OUTPUT COLLECTOR CURRENT (NORMALIZED) I C OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 0.1 V CE = 5 V NORMALIZED TO I F = 10 ma 0.01 0.1 1 10 100 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I F LED INPUT CURRENT (ma) Figure 4. Output Curent vs. Input Current 0.2 I F = 10 ma NORMALIZED TO VCE = 5 V 0.0 0 1 2 3 4 5 6 7 8 9 10 V CE COLLECTOR-EMITTER VOLTAGE (V) Figure 6. Output Current vs. Collector-Emitter Voltage 10000 I CEO COLLECTOR -EMITTER DARK CURRENT (na) 1000 100 10 1 VCE = 10 V 0.1 0 20 40 60 80 100 T A AMBIENT TEMPERATURE ( C) Figure 7. Dark Current vs. Ambient Temperature MOCD2xxM Rev. 4.10 6

Switching Time Test Circuit and Waveforms V CC = 10 V I F I C R L 10% INPUT OUTPUT 90% R BE t r t on Adjust I F to produce IC = 2 ma Figure 8. Switching Time Test Circuit and Waveforms INPUT PULSE OUTPUT PULSE t f t off MOCD2xxM Rev. 4.10 7

Reflow Profile Temperature ( C) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 T P TL Tsmax Tsmin Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area 120 Profile Freature Time 25 C to Peak Time (seconds) Figure 9. Reflow Profile Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150 C Temperature Maximum (Tsmax) 200 C Time (t S ) from (Tsmin to Tsmax) 60 120 seconds Ramp-up Rate (t L to t P ) 3 C/second maximum Liquidous Temperature (T L ) 217 C Time (t L ) Maintained Above (T L ) 60 150 seconds Peak Body Package Temperature 260 C +0 C / 5 C Time (t P ) within 5 C of 260 C 30 seconds t s tl t P 240 360 Ramp-down Rate (T P to T L ) Time 25 C to Peak Temperature 6 C/second maximum 8 minutes maximum MOCD2xxM Rev. 4.10 8

Ordering Information (2) Part Number Package Packing Method MOCD207M Small Outline 8-Pin Tube (100 Units) MOCD207R2M Small Outline 8-Pin Tape and Reel (2500 Units) MOCD207VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) MOCD207R2VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) Note: 2. The product orderable part number system listed in this table also applies to the MOCD208M, MOCD211M, MOCD213M, and MOCD217M products. Marking Information Table 1. Top Mark Definitions V Figure 10. Top Mark 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., 4 5 Digit Work Week, Ranging from 01 to 53 6 Assembly Package Code 1 X 3 4 5 D207 YY S 6 2 MOCD2xxM Rev. 4.10 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AttitudeEngine Awinda AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid MTi MTx MVN mwsaver OptoHiT OPTOLOGIC OPTOPLANAR Power Supply WebDesigner PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Xsens 仙童 * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change Advance Information Formative / In Design in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation www.fairchildsemi.com

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: MOCD217M MOCD217R2VM MOCD217R2M MOCD217VM