MUR12 Series SWITCHMODE Power Rectifiers MUR15, MUR11, MUR115, MUR12, MUR13, MUR14, MUR16 The MUR12 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. eatures Ultrafast 25, 5 and 75 Nanosecond Recovery Times 175 C Operating Junction Temperature ow orward Voltage ow eakage Current High Temperature Glass Passivated Junction Reverse Voltage to 6 V Shipped in Plastic Bags; 1, per Bag Available Tape and Reel; 5, per Reel, by adding a R Suffix to the Part Number These are Pb ree Devices* Mechanical Characteristics: Case: Epoxy, Molded Weight:.4 Gram (Approximately) inish: All External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 26 C Max. for 1 Seconds Polarity: Cathode Indicated by Polarity Band UTRAAST RECTIIERS 1. AMPERE, 5 6 VOTS MARKING DIAGRAM A MUR 1xx YYWW AXIA EAD CASE 59 STYE 1 A = Assembly ocation MUR1xx = Specific Device Code Y = Year WW = Work Week = Pb ree Package (Note: Microdot may be in either location) ORDERING INORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C, 213 May, 213 Rev. 12 1 Publication Order Number: MUR12/D
MUR12 Series MAXIMUM RATINGS MUR Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified orward Current (Square Wave Mounting Method #3 Per Note 2) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 6 Hz) Symbol V RRM V RWM V R 15 11 115 12 13 14 16 Unit 5 1 15 2 3 4 6 V I (AV) 1. @ T A = 13 C 1. @ T A = 12 C A I SM 35 A Operating Junction Temperature and Storage Temperature T J, T stg 65 to +175 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMA CHARACTERISTICS Characteristic Symbol Max Unit Maximum Thermal Resistance, Junction to Ambient R JA Note 2 C/W EECTRICA CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous orward Voltage (Note 1) (i = 1. Amp, T J = 15 C) (i = 1. Amp, T J = ) v.71.875 1.5 1.25 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, T J = 15 C) (Rated DC Voltage, T J = ) i R 5 2. 15 A Maximum Reverse Recovery Time (I = 1. A, di/dt = 5 A/ s) (I =.5 A, i R = 1. A, I REC =.25 A) Maximum orward Recovery Time (I = 1. A, di/dt = 1 A/ s, I REC to 1. V) Typical Peak Reverse Recovery Current (I = 1. A, di/dt = 5 A/ s) t rr 35 25 75 5 ns t fr 25 5 ns I RM.85 A 1. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.%. 2
MUR12 Series, INSTANTANEOUS ORWARD CURRENT (AMPS), AVERAGE POWER DISSIPATION (WATTS) P (AV) I i 1 7. 3. 2. 1..7.5.3.2.1.7.5.3.2.1.3.4.5.6.7.8.9 1. 1.1 1.2 4. 3. 2. 1. v, INSTANTANEOUS VOTAGE (VOTS) igure 1. Typical orward Voltage.5 1. 1.5 2. 2.5 I (AV), AVERAGE ORWARD CURRENT (AMPS) MUR15, MUR11, MUR115, MUR12 1 C I (CAPACITIVE OAD) PK 2 I AV igure 4. Power Dissipation 1 1.3, REVERSE CURRENT ( A) I R, AVERAGE ORWARD CURRENT (AMPS) (AV) C, CAPACITANCE (p) 1 1 1..1.1.1 2 4 6 8 1 12 14 16 18 2 4. 3. 2. 1. 5 5 3 2 1 7. 1 C V R, REVERSE VOTAGE (VOTS) igure 2. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. RATED V R R JA = 5 C/W 1 15 2 T A, AMBIENT TEMPERATURE ( C) igure 3. Current Derating (Mounting Method #3 Per Note 1) T J = 25 1 2 3 4 5 V R, REVERSE VOTAGE (VOTS) igure 5. Typical Capacitance 3
MUR12 Series MUR13, MUR14, MUR16 I, INSTANTANEOUS ORWARD CURRENT (AMPS), AVERAGE POWER DISSIPATION (WATTS) 1 7. i 3. 2. 1..7.5.3.2.1.7.5.3.2.1.3.5.7.9 1.1 1.3 1.5 1.7 1.9 2.1 4. 3. 2. 1. 1 C v, INSTANTANEOUS VOTAGE (VOTS) igure 6. Typical orward Voltage (CAPACITIVE OAD) I PK I AV 2 1 2.3, REVERSE CURRENT ( A) I R, AVERAGE ORWARD CURRENT (AMPS) (AV) C, CAPACITANCE (p) 4 1 4 1 4. 1..4.1.4.1.4 4. 3. 2. 1. 1 2 3 4 5 2 1 7. 3. 1 C 5 V R, REVERSE VOTAGE (VOTS) igure 7. Typical Reverse Current* 1 15 2 T A, AMBIENT TEMPERATURE ( C) igure 8. Current Derating (Mounting Method #3 Per Note 2) 6 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. RATED V R R JA = 5 C/W T J = 7 25 P (AV).5 1. 1.5 2. 2.5 2. 1 2 3 4 5 I (AV), AVERAGE ORWARD CURRENT (AMPS) V R, REVERSE VOTAGE (VOTS) igure 9. Power Dissipation igure 1. Typical Capacitance 4
MUR12 Series NOTE 2. AMBIENT MOUNTING DATA Data shown for thermal resistance, junction to ambient (R JA ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICA VAUES OR R JA IN STI AIR Mounting ead ength, (in.) Method 1/8 1/4 1/2 Units 1 2 3 52 65 72 R JA 67 8 87 5 C/W C/W C/W MOUNTING METHOD 1 É MOUNTING METHOD 2 Vector Pin Mounting MOUNTING METHOD 3 = 3/8 Board Ground Plane P.C. Board with 1 1/2 X 1 1/2 Copper Surface 5
MUR12 Series ORDERING INORMATION Device Marking Package Shipping MUR15 MUR15 Axial ead* 1 Units / Bag MUR15G MUR15 Axial ead* 1 Units / Bag MUR15R MUR15 Axial ead* 5 Units / Tape & Reel MUR15RG MUR15 Axial ead* 5 Units / Tape & Reel MUR11 MUR11 Axial ead* 1 Units / Bag MUR11G MUR11 Axial ead* 1 Units / Bag MUR11R MUR11 Axial ead* 5 Units / Tape & Reel MUR11RG MUR11 Axial ead* 5 Units / Tape & Reel MUR115 MUR115 Axial ead* 1 Units / Bag MUR115G MUR115 Axial ead* 1 Units / Bag MUR115R MUR115 Axial ead* 5 Units / Tape & Reel MUR115RG MUR115 Axial ead* 5 Units / Tape & Reel MUR12 MUR12 Axial ead* 1 Units / Bag MUR12G MUR12 Axial ead* 1 Units / Bag MUR12R MUR12 Axial ead* 5 Units / Tape & Reel MUR12RG MUR12 Axial ead* 5 Units / Tape & Reel MUR13 MUR13 Axial ead* 1 Units / Bag MUR13G MUR13 Axial ead* 1 Units / Bag MUR13R MUR13 Axial ead* 5 Units / Tape & Reel MUR13RG MUR13 Axial ead* 5 Units / Tape & Reel MUR14 MUR14 Axial ead* 1 Units / Bag MUR14G MUR14 Axial ead* 1 Units / Bag MUR14R MUR14 Axial ead* 5 Units / Tape & Reel MUR14RG MUR14 Axial ead* 5 Units / Tape & Reel MUR16 MUR16 Axial ead* 1 Units / Bag MUR16G MUR16 Axial ead* 1 Units / Bag MUR16R MUR16 Axial ead* 5 Units / Tape & Reel MUR16RG MUR16 Axial ead* 5 Units / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. *This package is inherently Pb ree. 6
MUR12 Series PACKAGE DIMENSIONS AXIA EAD CASE 59 1 ISSUE U POARITY INDICATOR OPTIONA AS NEEDED (SEE STYES) K B D A K NOTES: 1. DIMENSIONING AND TOERANCING PER ANSI Y14.5M, 1982. 2. CONTROING DIMENSION: INCH. 3. A RUES AND NOTES ASSOCIATED WITH JEDEC DO 41 OUTINE SHA APPY 4. POARITY DENOTED BY CATHODE BAND. 5. EAD DIAMETER NOT CONTROED WITHIN DIMENSION. INCHES MIIMETERS DIM MIN MAX MIN MAX A.161.25 4.1 5.2 B.79.16 2. 2.7 D.28.34.71.86.5 1.27 K 1. 25.4 STYE 1: PIN 1. CATHODE (POARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCIC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INORMATION ITERATURE UIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 33 675 2175 or 8 344 386 Toll ree USA/Canada ax: 33 675 2176 or 8 344 3867 Toll ree USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll ree USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer ocus Center Phone: 81 3 5817 15 7 ON Semiconductor Website: www.onsemi.com Order iterature: http://www.onsemi.com/orderlit or additional information, please contact your local Sales Representative MUR12/D